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    Thin film LED comprising a current-dispersing structure
    2.
    发明授权
    Thin film LED comprising a current-dispersing structure 有权
    薄膜LED包括电流分散结构

    公开(公告)号：US08368092B2

    公开(公告)日：2013-02-05

    申请号：US10587666

    申请日：2005-01-25

    申请人： Johannes Baur ,  Berthold Hahn ,  Volker Härle ,  Raimund Oberschmid ,  Andreas Weimar

    发明人： Johannes Baur ,  Berthold Hahn ,  Volker Härle ,  Raimund Oberschmid ,  Andreas Weimar

    IPC分类号： H01L33/00

    CPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).

    摘要翻译： 一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。 电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。 在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。 通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。 二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。

    Thin Film Led Comprising a Current-Dispersing Structure
    4.
    发明申请
    Thin Film Led Comprising a Current-Dispersing Structure 有权
    包含电流分散结构的薄膜引线

    公开(公告)号：US20070278508A1

    公开(公告)日：2007-12-06

    申请号：US10587666

    申请日：2005-01-25

    申请人： Johannes Baur ,  Berthold Hahn ,  Volker Harle ,  Raimund Oberschmid ,  Andreas Weimar

    发明人： Johannes Baur ,  Berthold Hahn ,  Volker Harle ,  Raimund Oberschmid ,  Andreas Weimar

    IPC分类号： H01L33/00

    CPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).

    摘要翻译： 一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。 电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。 在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。 通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。 二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。

    Method for producing an optoelectronic component
    6.
    发明申请
    Method for producing an optoelectronic component 有权
    光电子元件的制造方法

    公开(公告)号：US20070238210A1

    公开(公告)日：2007-10-11

    申请号：US11810326

    申请日：2007-06-04

    申请人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    发明人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  Y10S438/947

    摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.

    摘要翻译： 公开了一种用于制造光电子部件的方法。 该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层 在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小， 并去除掩模层。

    Optoelectronic component having a plurality of current expansion layers and method for producing it
    7.
    发明申请
    Optoelectronic component having a plurality of current expansion layers and method for producing it 有权
    具有多个电流膨胀层的光电子部件及其制造方法

    公开(公告)号：US20050253163A1

    公开(公告)日：2005-11-17

    申请号：US11120514

    申请日：2005-05-02

    申请人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    发明人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    IPC分类号： H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01S5/22 ,  H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  Y10S438/947

    摘要： An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).

    摘要翻译： 一种具有半导体芯片的光电子元件，该半导体芯片包含具有辐射发射有源区（4）的半导体层序列（6），该半导体层序列（6）具有侧壁（10）。 提供连接触点（9），用于将电流施加到活动区域中。 第一电流膨胀层（7）邻接半导体层序列（6）的半导体层（5），并且在半导体层序列（6）和连接触头（9）之间设置第二电流扩展层（8）。 第一电流膨胀层（7）具有比第二电流膨胀层（8）更大的薄层电阻，并与邻接的半导体层（5）形成欧姆接触。 第二电流膨胀层（8）被施加到距离侧壁（10）一定距离的第一电流膨胀层（7）的部分区域。

    Method for producing an optoelectronic component
    8.
    发明授权
    Method for producing an optoelectronic component 有权
    光电子元件的制造方法

    公开(公告)号：US07742677B2

    公开(公告)日：2010-06-22

    申请号：US11810326

    申请日：2007-06-04

    申请人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    发明人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    IPC分类号： G02B6/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  Y10S438/947

    摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.

    摘要翻译： 公开了一种用于制造光电子部件的方法。 该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层 在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小， 并去除掩模层。

    Optoelectronic component having a plurality of current expansion layers and method for producing it
    9.
    发明授权
    Optoelectronic component having a plurality of current expansion layers and method for producing it 有权
    具有多个电流膨胀层的光电子部件及其制造方法

    公开(公告)号：US07227191B2

    公开(公告)日：2007-06-05

    申请号：US11120514

    申请日：2005-05-02

    申请人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    发明人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    IPC分类号： H01L27/15 ,  H01L27/148 ,  H01L27/14 ,  H01L21/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  Y10S438/947

    摘要： An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).

    摘要翻译： 一种具有半导体芯片的光电子部件，该半导体芯片包含具有辐射发射有源区（4）的半导体层序列（6），该半导体层序列（6）具有侧壁（10）。 提供连接触点（9），用于将电流施加到活动区域中。 第一电流膨胀层（7）邻接半导体层序列（6）的半导体层（5），并且在半导体层序列（6）和连接触头（9）之间设置第二电流扩展层（8）。 第一电流膨胀层（7）具有比第二电流膨胀层（8）更大的薄层电阻，并与邻接的半导体层（5）形成欧姆接触。 第二电流膨胀层（8）被施加到距离侧壁（10）一定距离的第一电流膨胀层（7）的部分区域。