公开(公告)号：US20070278508A1

公开(公告)日：2007-12-06

申请号：US10587666

申请日：2005-01-25

申请人： Johannes Baur ,  Berthold Hahn ,  Volker Harle ,  Raimund Oberschmid ,  Andreas Weimar

发明人： Johannes Baur ,  Berthold Hahn ,  Volker Harle ,  Raimund Oberschmid ,  Andreas Weimar

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).

摘要翻译： 一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。 电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。 在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。 通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。 二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。

公开(公告)号：US07556974B2

公开(公告)日：2009-07-07

申请号：US11463633

申请日：2006-08-10

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimar

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimar

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于具有第一电子的氮化物半导体材料的第一组合物的器件阱层（6a） 提供具有与第一电子能量相比更高的电子能量的氮化物半导体材料的第二组合物的能量和势垒层（6b），然后通过辐射活性量子阱层（在生长方向上） 6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US20050042864A1

公开(公告)日：2005-02-24

申请号：US10495620

申请日：2002-11-12

申请人： Georg Bruderl ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Uwe Strauss ,  Andreas Weimar

发明人： Georg Bruderl ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Uwe Strauss ,  Andreas Weimar

IPC分类号： H01S5/042 ,  H01L21/285 ,  H01L21/363 ,  H01L29/20 ,  H01L29/45 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/14 ,  H01L33/325 ,  H01L33/40

摘要： An ohmic contact structure having a metallization (14) arranged on a semiconductor material (10), a contact layer being formed in the semiconductor material (10), which contact layer has a first partial region adjoining the metallization (14) and a second partial region (18) arranged downstream of the first partial region. The contact layer is doped in such a way that the doping concentration (N2) in the first partial region (12) is greater than the doping concentration (N1) in the second partial region (18).

摘要翻译： 具有布置在半导体材料（10）上的金属化（14）的欧姆接触结构，在半导体材料（10）中形成的接触层，该接触层具有邻接金属化层（14）的第一部分区域和第二部分 区域（18）布置在第一部分区域的下游。 以使第一部分区域（12）中的掺杂浓度（N2）大于第二部分区域（18）中的掺杂浓度（N1）的方式掺杂接触层。

公开(公告)号：US20080179380A1

公开(公告)日：2008-07-31

申请号：US11567977

申请日：2006-12-07

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Marianne Ortmann ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Marianne Ortmann ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder

IPC分类号： A47J36/02

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/02 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014

摘要： A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.

摘要翻译： 辐射发射半导体组件具有改进的辐射效率。 半导体部件具有多层结构，其具有用于在多层结构内产生辐射的有源层，以及具有第一和第二主表面的窗口。 多层结构邻接窗口的第一主表面。 为了提高辐射效率，至少一个凹槽（例如沟槽或凹坑）从第二主表面形成在窗口中。 凹部优选地具有朝向第一主表面渐缩的梯形横截面，并且可以例如通过锯入窗口来制造。

公开(公告)号：US20060237734A1

公开(公告)日：2006-10-26

申请号：US10567935

申请日：2004-08-19

申请人： Johannes Baur ,  Berthold Hahn ,  Volker Harle

发明人： Johannes Baur ,  Berthold Hahn ,  Volker Harle

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0083 ,  H01L2933/0091

摘要： A thin-layer LED chip (5) is claimed, comprising an epitaxial layer sequence (6) that is disposed on a carrier element (2) and contains an electromagnetic-radiation-generating active region (8), and a reflective layer (3) that is disposed on a principal surface of the epitaxial layer sequence (6) facing toward the carrier element (2) and reflects at least a portion of the electromagnetic radiation generated in the epitaxial layer sequence (6) back thereinto, in which a structured layer (1) containing a glass material is applied to a radiation extraction surface (7) of the epitaxial layer sequence (6) facing away from said carrier element (2) and has a structure that includes mutually adjacent protuberances (5) that taper in the direction away from the radiation extraction surface (7) and have a lateral grid size that is smaller than one wavelength of an electromagnetic radiation emitted from the epitaxial layer sequence (6). The structured layer (1) is advantageously applied as spin-on glass and structured by grayscale lithography.

摘要翻译： 要求保护薄层LED芯片（5），其包括设置在载体元件（2）上并包含电磁辐射生成有源区（8）的外延层序列（6）和反射层 ），其设置在面向载体元件（2）的外延层序列（6）的主表面上，并将在外延层序列（6）中产生的电磁辐射的至少一部分反射回到其中，其中结构化 将包含玻璃材料的层（1）施加到外延层序列（6）的远离所述载体元件（2）的辐射提取表面（7）上，并且具有包括彼此相邻的突起（5）的结构， 离开辐射提取表面（7）的方向并且具有小于从外延层序列（6）发射的电磁辐射的一个波长的横向网格尺寸。 结构化层（1）有利地作为旋涂玻璃施加，并通过灰度平版印刷法构成。

公开(公告)号：US07592636B2

公开(公告)日：2009-09-22

申请号：US10529625

申请日：2003-09-23

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

IPC分类号： H01L21/00 ,  H01L23/495

CPC分类号： H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

摘要翻译： 一种具有辐射透射性衬底（1）的辐射发射半导体部件，其底部布置有辐射产生层（2），其中衬底（1）具有倾斜的侧面区域（3），其中 衬底（1）的折射率大于辐射产生层的折射率，其中折射率差导致未发射的衬底区域（4），其中没有光子直接从辐射产生层 层，并且其中衬底（1）在未发光区域中具有基本上垂直的侧面区域（5）。 该组件的优点是可以从晶片获得更好的面积产率。

公开(公告)号：US20060124945A1

公开(公告)日：2006-06-15

申请号：US10529625

申请日：2003-09-23

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

IPC分类号： H01L33/00 ,  H01L21/78

CPC分类号： H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

摘要翻译： 一种具有辐射透射性衬底（1）的辐射发射半导体部件，其底部布置有辐射产生层（2），其中衬底（1）具有倾斜的侧面区域（3），其中 衬底（1）的折射率大于辐射产生层的折射率，其中折射率差导致未发射的衬底区域（4），其中没有光子直接从辐射产生层 层，并且其中衬底（1）在未发光区域中具有基本上垂直的侧面区域（5）。 该组件的优点是可以从晶片获得更好的面积产率。

公开(公告)号：US06891199B2

公开(公告)日：2005-05-10

申请号：US10343851

申请日：2001-07-24

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Ulrich Jacob ,  Werner Plass ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Ulrich Jacob ,  Werner Plass ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder

IPC分类号： H01L33/20 ,  H01L33/24 ,  H01L29/16

CPC分类号： H01L33/20 ,  H01L33/24 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.

摘要翻译： 用于高性能发光二极管的半导体芯片（1）的纵向边比其横向侧面大得多。 以这种方式可以显着改善光提取。

公开(公告)号：US07008810B2

公开(公告)日：2006-03-07

申请号：US10804514

申请日：2004-03-19

申请人： Christine Höss ,  Andreas Weimar ,  Andreas Leber ,  Alfred Lell ,  Helmut Fischer ,  Volker Harle

发明人： Christine Höss ,  Andreas Weimar ,  Andreas Leber ,  Alfred Lell ,  Helmut Fischer ,  Volker Harle

IPC分类号： H01L21/00

CPC分类号： H01L33/005 ,  H01S5/021 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/32341 ,  Y10S438/951

摘要： A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for definition of the mesa or ridge dimensions. The sacrificial layer (4) and of the layer or layer sequence are removed so that the mesa or ridge structure is formed in the layer or layer sequence. A part of the sacrificial layer (4) is selectively removed from the side areas thereof which have been uncovered in the previous step, so that a sacrificial layer remains which is narrower in comparison with a layer that has remained above the sacrificial layer as seen from the layer or layer sequence. A coating is applied at least to the sidewalls of the structure produced in the previous steps so that the side areas of the residual sacrificial layer are not completely overformed by the coating material. The sacrificial layer (4) is removed so that the layer that has remained above the sacrificial layer as seen from the layer or layer sequence is lifted off. A method is also disclosed for fabricating at least one gain-controlled laser diode in a layer sequence, in which method steps analogous to those described above are employed.

摘要翻译： 一种用于在层或层序列中制造至少一个台面或脊状结构的方法，其中牺牲层（4）被施加并在层或层序列上形成图案。 掩模层被施加和图案化在牺牲层上方以定义台面或脊尺寸。 去除牺牲层（4）和层或层序列，使得台层或脊结构以层或层序列形成。 牺牲层（4）的一部分从其前面的步骤中未被覆盖的侧面区域选择性地去除，从而与牺牲层上方的层相比较，牺牲层保持较窄，如从 层或层序列。 至少将涂层施加到在前述步骤中制造的结构的侧壁上，使得残余牺牲层的侧面区域不会被涂层材料完全覆盖。 去除牺牲层（4），使得从层或层序列看到的保留在牺牲层上方的层被提升。 还公开了一种用于在层序列中制造至少一个增益控制的激光二极管的方法，其中采用与上述类似的方法步骤。

公开(公告)号：US20080093611A1

公开(公告)日：2008-04-24

申请号：US11579194

申请日：2004-04-29

申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

IPC分类号： H01L21/04 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法。 半导体层序列在衬底上生长。 在半导体层序列上形成或施加镜层，其反射回到半导体层序列中，半导体层序列在其操作期间在半导体层序列中产生的辐射的至少一部分并且被指向镜层。 通过剥离方法将半导体层序列与衬底分离，其中半导体层序列中的分离区域至少部分地被分解，使得分离区的成分的各向异性残留物 分离层的金属成分保留在半导体层序列的分离表面，基板从该分离表面分离。 具有干蚀刻方法的半导体层序列的残留物的分离表面，气体蚀刻剂或湿化学蚀刻剂，其中各向异性残余物至少暂时用作蚀刻掩模。 根据这种方法制造半导体芯片。