-
公开(公告)号：US20070278508A1
公开(公告)日：2007-12-06
申请号：US10587666
申请日：2005-01-25
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).
摘要翻译： 一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。 电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。 在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。 通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。 二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。
-
公开(公告)号：US08581279B2
公开(公告)日：2013-11-12
申请号：US11921530
申请日：2006-06-02
申请人： Johannes Baur , Volker Härle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
发明人： Johannes Baur , Volker Härle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).
-
公开(公告)号：US20090212307A1
公开(公告)日：2009-08-27
申请号：US11921530
申请日：2006-06-02
申请人： Johannes Baur , Volker Hárle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
发明人： Johannes Baur , Volker Hárle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).
摘要翻译： 在具有辐射出射区域（1）的发光二极管芯片和设置在辐射出口区域（1）上的接触结构（2,3,4），并且包括接合焊盘（4）和多个接触腹板 2，3），其被设置用于电流膨胀并且导电连接到焊盘（4），焊盘（4）布置在辐射出口区域（1）的边缘区域中。 发光二极管芯片减少了接触结构（2,3,4）中发射的辐射（23）的吸收。
-
公开(公告)号：US08368092B2
公开(公告)日：2013-02-05
申请号：US10587666
申请日：2005-01-25
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).
摘要翻译： 一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。 电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。 在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。 通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。 二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。
-
公开(公告)号：US07556974B2
公开(公告)日：2009-07-07
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimar
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimar
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于具有第一电子的氮化物半导体材料的第一组合物的器件阱层（6a） 提供具有与第一电子能量相比更高的电子能量的氮化物半导体材料的第二组合物的能量和势垒层（6b），然后通过辐射活性量子阱层（在生长方向上） 6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。
-
公开(公告)号：US20050042864A1
公开(公告)日：2005-02-24
申请号：US10495620
申请日：2002-11-12
申请人： Georg Bruderl , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Uwe Strauss , Andreas Weimar
发明人： Georg Bruderl , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Uwe Strauss , Andreas Weimar
IPC分类号： H01S5/042 , H01L21/285 , H01L21/363 , H01L29/20 , H01L29/45 , H01L33/14 , H01L33/32 , H01L33/40 , H01L21/44 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/14 , H01L33/325 , H01L33/40
摘要： An ohmic contact structure having a metallization (14) arranged on a semiconductor material (10), a contact layer being formed in the semiconductor material (10), which contact layer has a first partial region adjoining the metallization (14) and a second partial region (18) arranged downstream of the first partial region. The contact layer is doped in such a way that the doping concentration (N2) in the first partial region (12) is greater than the doping concentration (N1) in the second partial region (18).
摘要翻译： 具有布置在半导体材料（10）上的金属化（14）的欧姆接触结构，在半导体材料（10）中形成的接触层，该接触层具有邻接金属化层（14）的第一部分区域和第二部分 区域（18）布置在第一部分区域的下游。 以使第一部分区域（12）中的掺杂浓度（N2）大于第二部分区域（18）中的掺杂浓度（N1）的方式掺杂接触层。
-
7.发明申请公开(公告)号：US20100283073A1
公开(公告)日：2010-11-11
申请号：US12680714
申请日：2008-09-04
CPC分类号： H01L33/38 , H01L33/10 , H01L33/145 , H01L33/405 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.
摘要翻译： 一种薄膜LED，包括阻挡层（3），位于阻挡层（3）之后的第一镜层（2），在第一镜面层（2）之后的层叠体（5），以及至少一个接触结构 6）后续层叠（5）。 层叠体（5）具有至少一个发射电磁辐射的活性层（5a）。 接触结构（6）设置在辐射出口区域（4）上并且具有接触区域（7）。 第一镜层（2）在与接触结构（6）的接触区域相对的区域中具有大于接触结构（6）的接触面积（7）的切口。 结果，提高了薄膜LED的效率。
-
8.发明授权公开(公告)号：US09252331B2
公开(公告)日：2016-02-02
申请号：US12680714
申请日：2008-09-04
IPC分类号： H01L33/00 , H01L21/00 , H01L21/76 , G01R31/26 , H01S5/00 , H01S5/183 , H01L33/38 , H01L33/10 , H01L33/14 , H01L33/40
CPC分类号： H01L33/38 , H01L33/10 , H01L33/145 , H01L33/405 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.
摘要翻译： 一种薄膜LED，包括阻挡层（3），位于阻挡层（3）之后的第一镜层（2），在第一镜面层（2）之后的层叠体（5），以及至少一个接触结构 6）后续层叠（5）。 层叠体（5）具有至少一个发射电磁辐射的活性层（5a）。 接触结构（6）设置在辐射出口区域（4）上并且具有接触区域（7）。 第一镜层（2）在与接触结构（6）的接触区域相对的区域中具有大于接触结构（6）的接触面积（7）的切口。 结果，提高了薄膜LED的效率。
-
公开(公告)号：US20070238210A1
公开(公告)日：2007-10-11
申请号：US11810326
申请日：2007-06-04
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.
摘要翻译： 公开了一种用于制造光电子部件的方法。 该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层 在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小， 并去除掩模层。
-
10.发明申请Optoelectronic component having a plurality of current expansion layers and method for producing it 有权具有多个电流膨胀层的光电子部件及其制造方法公开(公告)号：US20050253163A1
公开(公告)日：2005-11-17
申请号：US11120514
申请日：2005-05-02
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).
摘要翻译： 一种具有半导体芯片的光电子元件，该半导体芯片包含具有辐射发射有源区（4）的半导体层序列（6），该半导体层序列（6）具有侧壁（10）。 提供连接触点（9），用于将电流施加到活动区域中。 第一电流膨胀层（7）邻接半导体层序列（6）的半导体层（5），并且在半导体层序列（6）和连接触头（9）之间设置第二电流扩展层（8）。 第一电流膨胀层（7）具有比第二电流膨胀层（8）更大的薄层电阻，并与邻接的半导体层（5）形成欧姆接触。 第二电流膨胀层（8）被施加到距离侧壁（10）一定距离的第一电流膨胀层（7）的部分区域。
-
-
-
-
-
-
-
-
-
搜索结果
31 条记录 (耗时 0.023 秒)
