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    Process for synthesis of silicone resin
    3.
    发明授权
    Process for synthesis of silicone resin 有权
    硅树脂合成方法

    公开(公告)号：US06395825B1

    公开(公告)日：2002-05-28

    申请号：US09561481

    申请日：2000-04-28

    申请人： Gregory Scott Becker ,  Leslie Earl Carpenter, II ,  Russell Keith King ,  Tetsuyuki Michino ,  Eric Scott Moyer ,  Craig Rollin Yeakle

    发明人： Gregory Scott Becker ,  Leslie Earl Carpenter, II ,  Russell Keith King ,  Tetsuyuki Michino ,  Eric Scott Moyer ,  Craig Rollin Yeakle

    IPC分类号： C08G7708

    CPC分类号： C08G77/06

    摘要： A method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins. The method comprises adding at least one of hydridotrichlorosilane, tetrachlorosilane, or organotrichlorosilane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of organosulfates described by formula R2SO4H and alkali metal salts thereof, where R2 is selected from the group consisting of alkyl groups comprising about 4 to 16 carbon atoms and alkylphenyl groups comprising 7 to about 22 carbon atoms.

    摘要翻译： 水解具有至少三个氯原子键合到每个硅原子上以形成有机硅树脂的氯硅烷的方法。 该方法包括将氢三氯硅烷，四氯硅烷或有机三氯硅烷中的至少一种加入到包含非极性有机溶剂，包含0至约43重量％盐酸的水相和选自下组的表面活性化合物的两相混合物 由式R 2 SO 4 H所述的有机硫酸盐及其碱金属盐组成，其中R 2选自包含约4至16个碳原子的烷基和含有7至约22个碳原子的烷基苯基。

    Method And Materials For Reverse Patterning
    5.
    发明申请
    Method And Materials For Reverse Patterning 有权
    反向图案的方法和材料

    公开(公告)号：US20120123135A1

    公开(公告)日：2012-05-17

    申请号：US13386514

    申请日：2010-06-22

    申请人： Michael L. Bradford ,  Eric Scott Moyer ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

    发明人： Michael L. Bradford ,  Eric Scott Moyer ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

    IPC分类号： B29B13/08 ,  B29C33/38 ,  B29C59/16 ,  C07F7/18

    CPC分类号： C08G77/18 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/0337

    摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

    摘要翻译： 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，使用包含CF 4的水性碱性剥离剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，暴露光致抗蚀剂的整个顶表面。 然后，含有O 2的第二反应离子蚀刻配方蚀刻掉光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地，新图案可以被转移到下层中。

    Silsesquioxane Resins
    6.
    发明申请
    Silsesquioxane Resins 失效
    倍半硅氧烷树脂

    公开(公告)号：US20110003249A1

    公开(公告)日：2011-01-06

    申请号：US12919039

    申请日：2009-02-03

    申请人： Michael L. Bradford ,  Eric Scott Moyer ,  Sheng Wang ,  Craig Rollin Yeakle

    发明人： Michael L. Bradford ,  Eric Scott Moyer ,  Sheng Wang ,  Craig Rollin Yeakle

    IPC分类号： C08G77/28 ,  C09D1/00 ,  C09D183/00 ,  G03F7/004 ,  C08K5/06 ,  C08K5/1535 ,  C08K5/07 ,  B05D5/12 ,  G03F7/20

    CPC分类号： C08G77/28 ,  C08G77/04 ,  C08G77/12 ,  C08G77/70 ,  C09D183/04 ,  C09D183/08 ,  G02B1/04 ,  G03F7/0752 ,  G03F7/091 ,  C08L83/08 ,  C08L83/04

    摘要： A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR′)x)m, (HSiO(3-x)/2(OR′)x)n′(MeSiO(3-x)/2(OR′)x)o′(RSiO(3-x)/2(OR′)x)p, (R1SiO(3-x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0,95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.

    摘要翻译： 由单元（Ph（CH 2）r SiO（3-x）/ 2（OR'）x）m，（HSiO（3-x）/ 2（OR'）x）n'（MeSiO x）/ 2（OR'）x）o'（RSiO（3-x）/ 2（OR'）x）p，（R1SiO（3-x）/ 2（OR'）x）q其中Ph是苯基 组，我是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自芳基磺酸酯基; 并且R 1选自取代的苯基，酯基，聚醚基团; 巯基和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中在树脂m中具有0至0.95的值; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; 并且m + n + o + p + q = 1。

    Method and materials for reverse patterning
    7.
    发明授权
    Method and materials for reverse patterning 有权
    用于反向图案化的方法和材料

    公开(公告)号：US08828252B2

    公开(公告)日：2014-09-09

    申请号：US13386514

    申请日：2010-06-22

    申请人： Michael L. Bradford ,  Eric Scott Moyer ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

    发明人： Michael L. Bradford ,  Eric Scott Moyer ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

    IPC分类号： B44C1/22 ,  H01L21/02 ,  C08G77/18 ,  C08L83/04 ,  H01L21/033 ,  C09D183/04

    CPC分类号： C08G77/18 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/0337

    摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

    摘要翻译： 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，使用包含CF 4的水性碱性剥离剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，暴露光致抗蚀剂的整个顶表面。 然后，含有O 2的第二反应离子蚀刻配方蚀刻掉光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地，新图案可以被转移到下层中。

    Silsesquioxane resins
    9.
    发明授权
    Silsesquioxane resins 失效
    倍半硅氧烷树脂

    公开(公告)号：US08304161B2

    公开(公告)日：2012-11-06

    申请号：US12919039

    申请日：2009-02-03

    申请人： Michael L. Bradford ,  Eric Scott Moyer ,  Sheng Wang ,  Craig Rollin Yeakle

    发明人： Michael L. Bradford ,  Eric Scott Moyer ,  Sheng Wang ,  Craig Rollin Yeakle

    IPC分类号： G03F7/00 ,  G03F7/075 ,  G03F7/40 ,  C08G77/00 ,  C08G77/12

    CPC分类号： C08G77/28 ,  C08G77/04 ,  C08G77/12 ,  C08G77/70 ,  C09D183/04 ,  C09D183/08 ,  G02B1/04 ,  G03F7/0752 ,  G03F7/091 ,  C08L83/08 ,  C08L83/04

    摘要： A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR′)x)m, (HSiO(3-x)/2(OR′)x)n′(MeSiO(3-x)/2(OR′)x)o′(RSiO(3-x)/2(OR′)x)p, (R1SiO(3-x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.

    摘要翻译： 由单元（Ph（CH 2）r SiO（3-x）/ 2（OR'）x）m，（HSiO（3-x）/ 2（OR'）x）n'（MeSiO x）/ 2（OR'）x）o'（RSiO（3-x）/ 2（OR'）x）p，（R1SiO（3-x）/ 2（OR'）x）q其中Ph是苯基 组，我是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自芳基磺酸酯基; 并且R 1选自取代的苯基，酯基，聚醚基团; 巯基和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中，所述树脂m的值为0〜0.95; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; m + n + o + p + q = 1。

    Method for forming anti-reflective coating
    10.
    发明授权
    Method for forming anti-reflective coating 有权
    防反射涂层的形成方法

    公开(公告)号：US08653217B2

    公开(公告)日：2014-02-18

    申请号：US13212396

    申请日：2011-08-18

    申请人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

    发明人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

    IPC分类号： C08G77/12

    CPC分类号： C08G77/16

    摘要： A method of forming an antireflective coating on an electronic device comprising (A) applying to an electronic device an ARC composition comprising (i) a silsesquioxane resin having the formula (PhSiO(3-X)/2(OH)x)mHSiO(3-x)/2(OH)x)N(MeSiO(3-x)/2(OH)x)p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, and m+n+p≈1; and (ii) a solvent; and (B) removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.

    摘要翻译： 一种在电子器件上形成抗反射涂层的方法，包括（A）向电子器件施加ARC组合物，其包含（i）具有式（PhSiO（3-X）/ 2（OH）x）mHSiO（3）的倍半硅氧烷树脂 -x）/ 2（OH）x）N（MeSiO（3-x）/ 2（OH）x）p其中Ph为苯基，Me为甲基，x为0,1或2; m的值为0.05〜0.95，n为0.05〜0.95，p为0.05〜0.95，m + n +p≈1; 和（ii）溶剂; 和（B）除去溶剂并固化倍半硅氧烷树脂以在电子器件上形成抗反射涂层。