Analog integrated circuit pressure sensor
    1.
    发明授权
    Analog integrated circuit pressure sensor 失效
    模拟集成电路压力传感器

    公开(公告)号:US4539554A

    公开(公告)日:1985-09-03

    申请号:US434876

    申请日:1982-10-18

    CPC分类号: H03K17/9643

    摘要: An integrated array of pressure transducers capable of producing an analog output voltage representative of the applied pressure is proposed. The individual transducing elements (16) are defined by a three-layer structure including a thin layer of piezoelectric material (10) disposed between a reference potential plate (12) and a plurality of electrodes (15) contained in a silicon substrate (14). A force applied to a localized portion of the reference plate will cause a deflection of the piezoelectric material towards the electrodes on the substrate, inducing a capacitive charge on the electrode in the localized area. This capacitance is stores at a node A associated with the transducing element, and may be interrogated by a sensing circuit (18) located in the silicon substrate. Since the induced charge is directly proportional to the applied force, a measurement of the output voltage from node A will yield a direct indication of the localized force applied to the sensor.

    摘要翻译: 提出了能够产生代表所施加的压力的模拟输出电压的集成的压力传感器阵列。 单个换能元件(16)由三层结构限定,该三层结构包括设置在参考电位板(12)和包含在硅衬底(14)中的多个电极之间的压电材料薄层, 。 施加到参考板的局部部分的力将引起压电材料朝向衬底上的电极的偏转,从而在局部区域中的电极上引起电容性电荷。 该电容存储在与转换元件相关联的节点A处,并且可以由位于硅衬底中的感测电路(18)询问。 由于感应电荷与施加的力成正比,因此来自节点A的输出电压的测量将产生施加到传感器的局部力的直接指示。

    Semiconductor lasers with selective driving circuit
    2.
    发明授权
    Semiconductor lasers with selective driving circuit 失效
    具有选择性驱动电路的半导体激光器

    公开(公告)号:US4359773A

    公开(公告)日:1982-11-16

    申请号:US166045

    申请日:1980-07-07

    摘要: A plurality of semiconductor lasers (431-434) and a photodetector (120) are mounted on a silicon substrate (100) having an integrated circuit (101) fabricated therein. The integrated circuit includes a biasing circuit (405) for establishing a threshold current level that is dependent on the output of the photodetector and a modulator circuit (404) for providing a modulation current that is dependent on the digital values in an input signal. A semiconductor switch (406) selects only one of the plurality of semiconductor lasers for activation by the biasing and modulator circuits. The integrated circuit also includes a circuit (408) that operates the semiconductor switch so as to selectively activate a different one of the plurality of semiconductor lasers in response to either a predetermined output from said photodetector or in response to an external supervisory signal.

    摘要翻译: 多个半导体激光器(431-434)和光电检测器(120)安装在其上制造有集成电路(101)的硅衬底(100)上。 集成电路包括用于建立取决于光电检测器的输出的阈值电流电平的偏置电路(405)和用于提供取决于输入信号中的数字值的调制电流的调制器电路(404)。 半导体开关(406)仅选择多个半导体激光器中的一个来激活偏置和调制电路。 集成电路还包括操作半导体开关的电路(408),以响应于来自所述光电检测器的预定输出或响应于外部监控信号来选择性地激活多个半导体激光器中的不同的半导体激光器。

    High-speed demultiplexer circuit
    4.
    发明授权
    High-speed demultiplexer circuit 失效
    高速解复用器电路

    公开(公告)号:US4791628A

    公开(公告)日:1988-12-13

    申请号:US109009

    申请日:1987-10-16

    申请人: Robert G. Swartz

    发明人: Robert G. Swartz

    CPC分类号: H04J3/047 H04J3/0685

    摘要: A demultiplexer for demultiplexing a multiplexed input data signal into M output channels using M sequencer means clocked from an overlapping M phase system clock. The system clock operates at a frequency equal to the input data signal rate divided by M. Each sequencer means is clocked by a unique combination of the M phase system clock signals to select one data channel from the multiplexed input data signal. Since all sequencer means circuits are synchronized to the system clock, no variable delay lines are needed to align the timing between the circuit stages. A time delay latch is provided where needed in each sequencer means to enable all channels to output data concurrently. The demultiplexer includes a real-time data-framing capability to assure that the input data is correctly mapped to the proper output channels.

    Rapid alteration of ion implant dopant species to create regions of
opposite conductivity
    5.
    发明授权
    Rapid alteration of ion implant dopant species to create regions of opposite conductivity 失效
    快速改变离子注入掺杂物种以产生相反导电性的区域

    公开(公告)号:US4385946A

    公开(公告)日:1983-05-31

    申请号:US275418

    申请日:1981-06-19

    摘要: A molecular beam epitaxial method of fabricating a semiconductor device is disclosed wherein the dopant is implanted by establishing a plasma containing ions of the dopant and the ions are coupled through a drift chamber to impinge on the growing substrate surface. The plasma formed in the ion gun has ions of boron and arsenic and therefore the dopants selected for implantation can be determined by setting a mass filter present in the ion gun. A change to the dopant of the opposite conductivity type can be accomplished in seconds by simply readjusting the mass filter in the ion gun.

    摘要翻译: 公开了一种制造半导体器件的分子束外延方法,其中通过建立包含掺杂剂离子的等离子体来注入掺杂剂,并且离子通过漂移室耦合以撞击生长的衬底表面。 在离子枪中形成的等离子体具有硼和砷的离子,因此可以通过设置存在于离子枪中的质量过滤器来确定选择用于注入的掺杂剂。 通过简单地重新调整离子枪中的质量过滤器,可以在几秒钟内完成相反导电类型的掺杂剂的改变。

    Burst mode digital data receiver
    6.
    发明授权
    Burst mode digital data receiver 失效
    突发模式数字数据接收器

    公开(公告)号:US5025456A

    公开(公告)日:1991-06-18

    申请号:US305035

    申请日:1989-02-02

    CPC分类号: H04B10/6933

    摘要: A burst mode digital data receiver automatically adjusts its logic reference voltage to be equal to one-half of the sum of the minimum and maximum excursions of a received data signal. The receiver includes a differential amplifier circuit which has a first input for receiving the data signal and a second input connected to a voltage reference circuit. The voltage reference circuit is responsive to an output signal from the amplifier circuit to produce the required logic reference voltage at the second input to the amplifier circuit by generating a feedback signal which causes the amplifier circuit to have a first gain value during the absence of the data signal and while the data signal is less than its peak amplitude and a second gain value approximately twice the first gain value for a predetermined time after the peak amplitude of the data signal is reached.

    Means for controlling a semiconductor device and communication system
comprising the means
    8.
    发明授权
    Means for controlling a semiconductor device and communication system comprising the means 失效
    用于控制半导体器件的装置和包括该装置的通信系统

    公开(公告)号:US4680810A

    公开(公告)日:1987-07-14

    申请号:US749746

    申请日:1985-06-28

    申请人: Robert G. Swartz

    发明人: Robert G. Swartz

    摘要: The novel technique for stabilizing an electronic device, e.g., a semiconductor laser, is disclosed. The technique can advantageously be used to stabilize the bias current of such a laser at or near the lasing threshold of the device. A preferred application of thus stabilized lasers is in optical communication systems. The inventive technique comprises determination of a derivative of a variable characteristic of the device operation, e.g., the voltage across a laser, with respect to a parameter, e.g., the laser bias current. The derivative is determined by a novel method. For the particular case of laser bias stabilization, the method comprises injecting one or more nonsinusoidal ac current components into the laser, and phase-sensitivity detecting the voltage changes at the ac frequencies. The method can, in principle, be used to determine derivatives of arbitrarily high order. A circuit capable of determining the second, third and fourth derivatives of the voltage as a function of bias current is disclosed. The derivative extraction method can also be embodied in measurement apparatus, and as useful in other process control applications.

    摘要翻译: 公开了用于稳定诸如半导体激光器的电子器件的新技术。 该技术可以有利地用于在设备的激光阈值处或附近稳定这种激光器的偏置电流。 这样稳定的激光器的优选应用在光通信系统中。 本发明的技术包括相对于诸如激光偏置电流的参数确定器件操作的可变特性的导数,例如激光器两端的电压。 该衍生物由一种新方法确定。 对于激光偏置稳定的特定情况,该方法包括将一个或多个非正弦交流电流分量注入到激光器中,并且相位灵敏度检测在交流频率处的电压变化。 该方法原则上可用于确定任意高阶的导数。 公开了能够确定作为偏置电流的函数的电压的第二,第三和第四导数的电路。 导数提取方法也可以体现在测量设备中,并且在其他过程控制应用中也是有用的。

    Microwave transistor
    9.
    发明授权
    Microwave transistor 失效
    微波晶体管

    公开(公告)号:US4428111A

    公开(公告)日:1984-01-31

    申请号:US327790

    申请日:1981-12-07

    申请人: Robert G. Swartz

    发明人: Robert G. Swartz

    摘要: A process for fabricating a high speed bipolar transistor is described wherein the collector, base and emitter layers are first grown using molecular beam epitaxy (MBE). A mesa etch is performed to isolate a base-emitter region, and a contact layer is grown using MBE over this isolated region to make contact with the thin base layer. The contact layer is selectively etched to expose the emitter layer, and metal is deposited to fabricate emitter, base and collector contacts.

    摘要翻译: 描述了制造高速双极晶体管的工艺,其中首先使用分子束外延(MBE)生长集电极,基极和发射极层。 执行台面蚀刻以隔离基极 - 发射极区域,并且使用MBE在该隔离区域上生长接触层以与薄的基底层接触。 选择性地蚀刻接触层以暴露发射极层,并且沉积金属以制造发射极,基极和集电极触点。