摘要:
A quantum effect device implementation of the Shannon Decomposition Function in the form of a Shannon Cell is provided in which a first quantum dot logic unit (50) is coupled between the X input and the output of the Shannon Cell. A second quantum dot logic unit (52) is coupled between the Y input and the output of the Shannon Cell. The control input to the Shannon Cell is coupled to both the first and second quantum dot logic units (50 and 52) such that current flows through the appropriate quantum dot logic unit (50 or 52) depending upon the logic state of the control input.
摘要:
A quantum dot logic unit (8) is provided which comprises a row of quantum dots (14, 16, and 18), with each quantum dot separated by vertical heterojunction tunneling barriers (20, 22, 24, and 26). Electric potentials placed on inputs (32, 34, and 36) are operable to modulate quantum states within the quantum dots, thus controlling electron tunneling through the tunneling barriers.
摘要:
A resonant tunneling diode (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication method uses angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.
摘要:
A quantum dot logic unit (8) is provided which comprises a row of quantum dots (14, 16, and 18), with each quantum dot separated by vertical heterojunction tunneling barriers (20, 22, 24, and 26). Electric potentials placed on inputs (32, 34, and 36) are operable to modulate quantum states within the quantum dots, thus controlling electron tunneling through the tunneling barriers.
摘要:
A system for locating impacts comprises at least one array of a plurality of carbon nanotubes, each carbon nanotube operable to emit electrical activity when compressed. The system also comprises at least one sensor coupled to the at least one array configured to detect emitted electrical activity from the plurality of carbon nanotubes. Furthermore, a computer is configured to determine the location of an impact on the at least one array in response to the detected emitted electrical activity from the plurality of carbon nanotubes.
摘要:
An apparatus includes a circuit having first and second portions which are each coupled between first and second nodes. The first portion includes a resonant tunneling device, and the second portion has a reactance that includes, at a selected frequency, a complex conjugate reactance of a reactance of the resonant tunneling device. The complex conjugate reactance substantially cancels the reactance of the resonant tunneling device at the selected frequency.
摘要:
A resettable latched voltage comparator includes a resonant tunneling diode 10 connected in series with an amplifier 14 and a power source 16, and a reset circuit 12 connected between a circuit output terminal 18 and a second power source 20. Amplifier 14 converts the value of the voltage at an input terminal 22 into a proportional current at terminal 24; diode 10 detects the condition when the current at terminal 24 rises above a specific value equal to the resonant peak current of resonant tunneling diode 10; and reset circuit 12 controllably forces the voltage at terminal 18 of the circuit to a value approximately equal to the output voltage of power source 16 at terminal 29, thereby reducing the bias across diode 10 to approximately zero. A flash analog-to-digital converter configuration includes a plurality of comparators 200.sub.i having their reference voltage inputs biased from a series-connected chain of resistors 210.sub.i. The input terminals 22.sub.i of the comparators are coupled for connection to an analog signal source, and the comparator reset terminals 25.sub.i are coupled for connection to a reset control source.
摘要:
A magnetic memory cell 10 is provided, which includes a layer 12 of superconducting material. A current path 22 is formed insulatively adjacent layer 12 of superconducting material, such that a current passed through current path 22 induces a magnetic field of a selected magnitude and selected orientation in layer 12 of superconducting material.
摘要:
A light modulator and a high speed spatial light modulator (230) with each pixel (231) made of stacked quarter wavelength layers (232, 234) of heterogeneous material. Each layer (232, 234) is composed of periodic quantum well structures whose optical constants can be strongly perturbed by bias on control electrodes (240, 242). The control electrodes (240, 242) act to either remove light absorbing electrons from the layer or to inject them into each layer. The effect is to produce either a highly relecting mirror or a highly absorbing structure. The spatial light modulator (230) is compatible with semiconductor processing technology. Also, a modulator invoking the Burstein effect in the form of a stack of p-n diodes is disclosed.
摘要:
Self powered microelectromechanical oscillators are provided for various applications. In one embodiment, the invention relates to a self powered microelectromechanical tagging or sensing system including a microelectromechanical oscillator having a characteristic frequency, the oscillator including a first substrate having a radioactive material configured to emit electrons, and a second substrate, spaced apart from the first substrate by first and second ends supported at spaced locations on the first substrate, where the second substrate includes a flexible material and is configured to collect the electrons emitted from the first substrate, and move toward the first substrate from a default position to an actuated position when a sufficient number of electrons have been collected, where, in the actuated position, collected electrons are transferred from the second substrate to the first substrate, and a circuitry configured to receive, from the oscillator by wireless communication, information indicative of the characteristic frequency of the oscillator.