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公开(公告)号：US07327003B2
公开(公告)日：2008-02-05
申请号：US11058483
申请日：2005-02-15
IPC分类号： H01L29/84
CPC分类号： B60C23/0408 , B81B3/0018 , H01G5/18 , H01G5/40 , H01L2224/16145 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： Rather than increasing the mass of the structure, the structure in a sensor system suspends its substrate from some mechanical ground. Motion of the substrate relative to the mechanical ground thus provides the movement information. To those ends, the sensor system includes a base, a substrate, and a flexible member suspended from at least a portion of the substrate. At least a portion of the flexible member is capable of moving relative to at least a portion of the substrate. In addition, the flexible member is secured to the base, thus causing the substrate to be movable relative to the base. Moreover, the mass of the substrate is greater than the mass of the flexible member. The substrate and flexible member are configured to interact to produce a motion signal identifying movement of the base.
摘要翻译： 传感器系统中的结构不是增加结构的质量，而是将其基板从某些机械接地处悬挂下来。 因此，基板相对于机械地面的运动提供运动信息。 为此，传感器系统包括基底，基底和从基底的至少一部分悬挂的柔性构件。 柔性构件的至少一部分能够相对于衬底的至少一部分移动。 此外，柔性构件被固定到基部，从而使得基板相对于基座移动。 此外，衬底的质量大于柔性构件的质量。 衬底和柔性构件被配置为相互作用以产生识别基部的移动的运动信号。
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公开(公告)号：US07821084B2
公开(公告)日：2010-10-26
申请号：US11952404
申请日：2007-12-07
IPC分类号： H01L29/84
CPC分类号： B60C23/0408 , B81B3/0018 , H01G5/18 , H01G5/40 , H01L2224/16145 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： Rather than increasing the mass of the structure, the structure in a sensor system suspends its substrate from some mechanical ground. Motion of the substrate relative to the mechanical ground thus provides the movement information. To those ends, the sensor system includes a base, a substrate, and a flexible member suspended from at least a portion of the substrate. At least a portion of the flexible member is capable of moving relative to at least a portion of the substrate. In addition, the flexible member is secured to the base, thus causing the substrate to be movable relative to the base. Moreover, the mass of the substrate is greater than the mass of the flexible member. The substrate and flexible member are configured to interact to produce a motion signal identifying movement of the base.
摘要翻译： 传感器系统中的结构不是增加结构的质量，而是将其基板从某些机械接地处悬挂下来。 因此，基板相对于机械地面的运动提供运动信息。 为此，传感器系统包括基底，基底和从基底的至少一部分悬挂的柔性构件。 柔性构件的至少一部分能够相对于衬底的至少一部分移动。 此外，柔性构件被固定到基部，从而使得基板相对于基座移动。 此外，衬底的质量大于柔性构件的质量。 衬底和柔性构件被配置为相互作用以产生识别基部的移动的运动信号。
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公开(公告)号：US08129803B2
公开(公告)日：2012-03-06
申请号：US12804213
申请日：2010-07-16
申请人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
发明人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
CPC分类号： H04R3/00 , B81B2201/0235 , B81B2201/0257 , B81C1/00182 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/15151 , H04R19/005 , H04R2499/11
摘要： A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
摘要翻译： 微机械麦克风由硅或绝缘体上硅（SOI）晶片形成。 用于麦克风的固定感测电极由晶片的顶部硅层形成。 通过沉积形成结构的至少一个氧化物层，然后通过形成的沟槽从顶部硅层的背面去除结构物下面的氧化物的一部分，形成在顶部硅层前侧上的各种多晶硅麦克风结构 通过顶层硅层。 沟槽允许声波从顶部硅层的背面到达隔膜。 在SOI晶片中，通过底部硅层和中间氧化物层形成空腔，以露出沟槽，以去除氧化物并允许声波到达隔膜。 惯性传感器可以形成在相同的晶片上，其中各种惯性传感器结构基本上在同一时间形成并且使用与对应的麦克风结构基本上相同的过程。
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公开(公告)号：US20100285628A1
公开(公告)日：2010-11-11
申请号：US12804213
申请日：2010-07-16
申请人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
发明人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
CPC分类号： H04R3/00 , B81B2201/0235 , B81B2201/0257 , B81C1/00182 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/15151 , H04R19/005 , H04R2499/11
摘要： A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
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公开(公告)号：US07825484B2
公开(公告)日：2010-11-02
申请号：US11113925
申请日：2005-04-25
申请人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
发明人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
IPC分类号： H01L29/82
CPC分类号： H04R3/00 , B81B2201/0235 , B81B2201/0257 , B81C1/00182 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/15151 , H04R19/005 , H04R2499/11
摘要： A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
摘要翻译： 微机械麦克风由硅或绝缘体上硅（SOI）晶片形成。 用于麦克风的固定感测电极由晶片的顶部硅层形成。 通过沉积形成结构的至少一个氧化物层，然后通过形成的沟槽从顶部硅层的背面去除结构物下面的氧化物的一部分，形成在顶部硅层前侧上的各种多晶硅麦克风结构 通过顶层硅层。 沟槽允许声波从顶部硅层的背面到达隔膜。 在SOI晶片中，通过底部硅层和中间氧化物层形成空腔，以露出沟槽，以去除氧化物并允许声波到达隔膜。 惯性传感器可以形成在相同的晶片上，其中各种惯性传感器结构基本上在同一时间形成并且使用与对应的麦克风结构基本上相同的过程。
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公开(公告)号：US08169042B2
公开(公告)日：2012-05-01
申请号：US12845348
申请日：2010-07-28
CPC分类号： H04R19/005 , B81B2201/0257 , B81C1/00246 , B81C2203/0728 , H04R1/04 , H04R19/04 , H04R31/006
摘要： A method of forming a microphone having a variable capacitance first deposits high temperature deposition material on a die. The high temperature material ultimately forms structure that contributes to the variable capacitance. The method then forms circuitry on the die after depositing the deposition material. The circuitry is configured to detect the variable capacitance.
摘要翻译： 形成具有可变电容的麦克风的方法首先将高温沉积材料沉积在模具上。 高温材料最终形成有助于可变电容的结构。 该方法然后在沉积沉积材料之后在管芯上形成电路。 电路被配置为检测可变电容。
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公开(公告)号：US07795695B2
公开(公告)日：2010-09-14
申请号：US11535804
申请日：2006-09-27
CPC分类号： H04R19/005 , B81B2201/0257 , B81C1/00246 , B81C2203/0728 , H04R1/04 , H04R19/04 , H04R31/006
摘要： A method of forming a microphone having a variable capacitance first deposits high temperature deposition material on a die. The high temperature material ultimately forms structure that contributes to the variable capacitance. The method then forms circuitry on the die after depositing the deposition material. The circuitry is configured to detect the variable capacitance.
摘要翻译： 形成具有可变电容的麦克风的方法首先将高温沉积材料沉积在模具上。 高温材料最终形成有助于可变电容的结构。 该方法然后在沉积沉积材料之后在管芯上形成电路。 电路被配置为检测可变电容。
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公开(公告)号：US07338614B2
公开(公告)日：2008-03-04
申请号：US11397409
申请日：2006-04-04
CPC分类号： B81C1/00531 , H01L21/31144
摘要： A method of processing a semiconductor wafer provides a wafer, and then forms an organic mask on at least a portion of the wafer. The method then applies a vapor etching process to the wafer through holes in the organic mask.
摘要翻译： 处理半导体晶片的方法提供晶片，然后在晶片的至少一部分上形成有机掩模。 然后，该方法通过有机掩模中的孔对晶片施加气相蚀刻工艺。
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公开(公告)号：US20100289097A1
公开(公告)日：2010-11-18
申请号：US12845348
申请日：2010-07-28
CPC分类号： H04R19/005 , B81B2201/0257 , B81C1/00246 , B81C2203/0728 , H04R1/04 , H04R19/04 , H04R31/006
摘要： A method of forming a microphone having a variable capacitance first deposits high temperature deposition material on a die. The high temperature material ultimately forms structure that contributes to the variable capacitance. The method then forms circuitry on the die after depositing the deposition material. The circuitry is configured to detect the variable capacitance.
摘要翻译： 形成具有可变电容的麦克风的方法首先将高温沉积材料沉积在模具上。 高温材料最终形成有助于可变电容的结构。 该方法然后在沉积沉积材料之后在管芯上形成电路。 电路被配置为检测可变电容。
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公开(公告)号：US09213181B2
公开(公告)日：2015-12-15
申请号：US13474532
申请日：2012-05-17
CPC分类号： G02B26/02 , B81B7/0067 , B81B2201/038 , B81B2201/047 , B81C1/00 , B81C1/00039 , B81C1/00261 , B81C2203/054 , G09G3/3413 , G09G3/3433 , G09G3/3466 , G09G2320/041 , G09G2360/144 , H01L23/544 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/97 , H01L2223/54426 , H01L2224/1132 , H01L2224/114 , H01L2224/11462 , H01L2224/131 , H01L2224/16238 , H01L2224/2612 , H01L2224/29011 , H01L2224/32238 , H01L2224/73201 , H01L2224/81121 , H01L2224/81192 , H01L2224/81815 , H01L2224/83007 , H01L2224/83121 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/12044 , H01L2924/1461 , H01L2924/15788 , Y10T428/24157 , Y10T428/24744 , H01L2924/014 , H01L2924/00014 , H01L2924/00
摘要： A display apparatus includes a first substrate, a plurality of microelectromechanical systems (MEMS) light modulators formed from a structural material coupled to the first substrate and a second substrate separated from the first substrate. A plurality of spacers extend from the first substrate to keep the second substrate a minimum distance away from the plurality of light modulators. The spacers include a first polymer layer having a surface in contact with the first substrate, a second polymer layer encapsulating the first polymer layer and a layer of the structural material encapsulating the second polymer layer. The spacers can be used as fluid barriers and configured to surround more than one but less than all of the MEMS light modulators in the display apparatus.
摘要翻译： 显示装置包括第一基板，由耦合到第一基板的结构材料形成的多个微机电系统（MEMS）光调制器和与第一基板分离的第二基板。 多个间隔件从第一基板延伸以使第二基板保持离开多个光调制器的最小距离。 间隔物包括具有与第一基底接触的表面的第一聚合物层，包封第一聚合物层的第二聚合物层和包封第二聚合物层的结构材料层。 间隔件可以用作流体屏障并且被配置为围绕显示装置中的多于一个但是不到所有的MEMS光调制器。
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