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    GCIB-treated resistive device
    2.
    发明授权
    GCIB-treated resistive device 有权
    GCIB处理电阻器件

    公开(公告)号：US08223539B2

    公开(公告)日：2012-07-17

    申请号：US12693936

    申请日：2010-01-26

    申请人： John Smythe ,  Gurtej S. Sandhu

    发明人： John Smythe ,  Gurtej S. Sandhu

    IPC分类号： G11C11/34

    CPC分类号： H01L45/165 ,  G11C13/0007 ,  G11C2213/56 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1641 ,  H01L45/1683

    摘要： The present disclosure includes GCIB-treated resistive devices, devices utilizing GCIB-treated resistive devices (e.g., as switches, memory cells), and methods for forming the GCIB-treated resistive devices. One method of forming a GCIB-treated resistive device includes forming a lower electrode, and forming an oxide material on the lower electrode. The oxide material is exposed to a gas cluster ion beam (GCIB) until a change in resistance of a first portion of the oxide material relative to the resistance of a second portion of the oxide material. An upper electrode is formed on the first portion.

    摘要翻译： 本公开包括GCIB处理的电阻性装置，利用GCIB处理的电阻性装置（例如，作为开关，存储器单元）的装置以及用于形成经GCIB处理的电阻装置的方法。 形成GCIB处理的电阻性器件的一种方法包括形成下电极，并在下电极上形成氧化物材料。 将氧化物材料暴露于气体簇离子束（GCIB），直到氧化物材料的第一部分的电阻相对于氧化物材料的第二部分的电阻发生变化。 上电极形成在第一部分上。

    Memory Arrays And Methods Of Forming Memory Cells
    3.
    发明申请
    Memory Arrays And Methods Of Forming Memory Cells 有权
    内存阵列和形成记忆体的方法

    公开(公告)号：US20120068143A1

    公开(公告)日：2012-03-22

    申请号：US12886283

    申请日：2010-09-20

    申请人： John Smythe ,  Gurtej S. Sandhu

    发明人： John Smythe ,  Gurtej S. Sandhu

    IPC分类号： H01L45/00 ,  H01L21/16

    CPC分类号： H01L45/145 ,  H01L27/2409 ,  H01L27/2472 ,  H01L27/2481

    摘要： Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide.

    摘要翻译： 一些实施例包括利用导电线，电极和可编程材料的各种布置形成存储单元的方法; 其中可编程材料含有高k电介质材料直接抵抗多价金属氧化物。 一些实施例包括存储器单元的阵列，其中存储单元包括直接对抗多价金属氧化物的包含高k电介质材料的可编程材料。

    Methods of forming patterns
    4.
    发明授权
    Methods of forming patterns 有权
    形成图案的方法

    公开(公告)号：US08133664B2

    公开(公告)日：2012-03-13

    申请号：US12397083

    申请日：2009-03-03

    申请人： Scott Sills ,  Gurtej S. Sandhu ,  John Smythe ,  Ming Zhang

    发明人： Scott Sills ,  Gurtej S. Sandhu ,  John Smythe ,  Ming Zhang

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0274 ,  G03F7/20 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/0338

    摘要： Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.

    摘要翻译： 一些实施例包括形成开口图案的方法。 所述方法可以包括在衬底上形成间隔的特征。 特征可以具有顶部并且可以具有从顶部向下延伸的侧壁。 第一材料可以沿着特征的顶部和侧壁形成。 第一材料可以通过将特征上的第一材料的共形层旋转浇铸而形成，或通过相对于基底的特征的选择性沉积来形成。 在形成第一材料之后，可以在特征之间提供填充材料，同时使第一材料的区域暴露。 然后可以相对于填充材料和特征来选择性地去除第一材料的暴露区域以产生开口图案。

    Memory cells and methods of forming memory cells
    5.
    发明授权
    Memory cells and methods of forming memory cells 有权

    公开(公告)号：US08691622B2

    公开(公告)日：2014-04-08

    申请号：US13480610

    申请日：2012-05-25

    申请人： John Smythe ,  Gurtej S. Sandhu

    发明人： John Smythe ,  Gurtej S. Sandhu

    IPC分类号： H01L21/06 ,  H01L21/311

    CPC分类号： H01L45/12 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/16 ,  H01L45/1675

    摘要： A method of forming a memory cell includes forming programmable material within an opening in dielectric material over an elevationally inner conductive electrode of the memory cell. Conductive electrode material is formed over the dielectric material and within the opening. The programmable material within the opening has an elevationally outer edge surface angling elevationally and laterally inward relative to a sidewall of the opening. The conductive electrode material is formed to cover over the angling surface of the programmable material within the opening. The conductive electrode material is removed back at least to an elevationally outermost surface of the dielectric material and to leave the conductive electrode material covering over the angling surface of the programmable material within the opening. The conductive electrode material constitutes at least part of an elevationally outer conductive electrode of the memory cell. Memory cells independent of method of manufacture are also disclosed.

    GCIB-TREATED RESISTIVE DEVICE
    7.
    发明申请
    GCIB-TREATED RESISTIVE DEVICE 有权
    GCIB处理电阻器件

    公开(公告)号：US20110182103A1

    公开(公告)日：2011-07-28

    申请号：US12693936

    申请日：2010-01-26

    申请人： John Smythe ,  Gurtej S. Sandhu

    发明人： John Smythe ,  Gurtej S. Sandhu

    IPC分类号： G11C11/56 ,  H01L21/34 ,  H01L45/00

    CPC分类号： H01L45/165 ,  G11C13/0007 ,  G11C2213/56 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1641 ,  H01L45/1683

    摘要： The present disclosure includes GCIB-treated resistive devices, devices utilizing GCIB-treated resistive devices (e.g., as switches, memory cells), and methods for forming the GCIB-treated resistive devices. One method of forming a GCIB-treated resistive device includes forming a lower electrode, and forming an oxide material on the lower electrode. The oxide material is exposed to a gas cluster ion beam (GCIB) until a change in resistance of a first portion of the oxide material relative to the resistance of a second portion of the oxide material. An upper electrode is formed on the first portion.

    摘要翻译： 本公开包括GCIB处理的电阻性装置，利用GCIB处理的电阻性装置（例如，作为开关，存储器单元）的装置以及用于形成经GCIB处理的电阻装置的方法。 形成GCIB处理的电阻性器件的一种方法包括形成下电极，并在下电极上形成氧化物材料。 将氧化物材料暴露于气体簇离子束（GCIB），直到氧化物材料的第一部分的电阻相对于氧化物材料的第二部分的电阻发生变化。 上电极形成在第一部分上。

    Silicon dioxide deposition methods using at least ozone and TEOS as deposition precursors
    8.
    发明授权
    Silicon dioxide deposition methods using at least ozone and TEOS as deposition precursors 有权
    至少使用臭氧和TEOS作为沉积前体的二氧化硅沉积方法

    公开(公告)号：US07902084B2

    公开(公告)日：2011-03-08

    申请号：US11773622

    申请日：2007-07-05

    申请人： John Smythe ,  Gurtej S. Sandhu

    发明人： John Smythe ,  Gurtej S. Sandhu

    IPC分类号： H01L21/31

    CPC分类号： H01L21/31612 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/3105

    摘要： Embodiments disclosed herein pertain to silicon dioxide deposition methods using at least ozone and tetraethylorthosilicate (TEOS) as deposition precursors. In one embodiment, a silicon dioxide deposition method using at least ozone and TEOS as deposition precursors includes flowing precursors comprising ozone and TEOS to a substrate under subatmospheric pressure conditions effective to deposit silicon dioxide-comprising material having an outer surface onto the substrate. The outer surface is treated effective to one of add hydroxyl to or remove hydroxyl from the outer surface in comparison to any hydroxyl presence on the outer surface prior to said treating. After the treating, precursors comprising ozone and TEOS are flowed to the substrate under subatmospheric pressure conditions effective to deposit silicon dioxide-comprising material onto the treated outer surface of the substrate. Other embodiments are contemplated.

    摘要翻译： 本文公开的实施方案涉及至少使用臭氧和原硅酸四乙酯（TEOS）作为沉积前体的二氧化硅沉积方法。 在一个实施方案中，使用至少臭氧和TEOS作为沉积前体的二氧化硅沉积方法包括在低于大气压的压力条件下将包含臭氧和TEOS的前体流入基底，以有效地将具有外表面的含二氧化硅的材料沉积到基底上。 与所述处理之前的外表面上的任何羟基存在相比，外表面被有效地对从外表面添加羟基或除去羟基之一进行处理。 在处理之后，包含臭氧和TEOS的前体在有效将含二氧化硅的材料沉积到经处理的基底的外表面上的低于大气压的压力条件下流到基底。 预期其他实施例。

    SEMICONDUCTOR MATERIAL MANUFACTURE
    9.
    发明申请
    SEMICONDUCTOR MATERIAL MANUFACTURE 有权
    半导体材料制造

    公开(公告)号：US20100193897A1

    公开(公告)日：2010-08-05

    申请号：US12365734

    申请日：2009-02-04

    申请人： Nishant Sinha ,  Gurtej S. Sandhu ,  John Smythe

    发明人： Nishant Sinha ,  Gurtej S. Sandhu ,  John Smythe

    IPC分类号： H01L27/12 ,  H01L21/762

    CPC分类号： H01L21/76254

    摘要： Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods are disclosed.

    摘要翻译： 电子设备，系统和方法包括结合到晶片或基板的主体区域的半导体层，其中半导体层可以使用电磁辐射结合到主体区域。 公开了附加装置，系统和方法。

    Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
    10.
    发明授权
    Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array 有权
    形成非易失性电阻氧化物存储单元的方法和形成非易失性电阻氧化物存储器阵列的方法

    公开(公告)号：US09343665B2

    公开(公告)日：2016-05-17

    申请号：US12166604

    申请日：2008-07-02

    申请人： Nishant Sinha ,  John Smythe ,  Bhaskar Srinivasan ,  Gurtej S. Sandhu ,  Joseph Neil Greeley ,  Kunal R. Parekh

    发明人： Nishant Sinha ,  John Smythe ,  Bhaskar Srinivasan ,  Gurtej S. Sandhu ,  Joseph Neil Greeley ,  Kunal R. Parekh

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/1683 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

    摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.

    摘要翻译： 形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。 含金属氧化物的材料形成在第一导电电极上。 蚀刻停止材料沉积在包含金属氧化物的材料上。 导电材料沉积在蚀刻停止材料上。 包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。 这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。 考虑其他实现。