-
1.发明授权Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability 失效具有旋转晶片保持器和预润湿和冲洗能力的电镀室
公开(公告)号：US6099702A
公开(公告)日：2000-08-08
申请号：US96015
申请日：1998-06-10
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译： 电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。 回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。 还提供废物通道，其具有与回收通道的入口不同的高度的入口。 电镀后，将晶片提升到一个位置并旋转。 在旋转的同时，将晶片用例如超纯水彻底冲洗。 晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。
-
2.发明授权Electroplating process chamber and method with pre-wetting and rinsing capability 有权电镀工艺室和预润湿和冲洗能力的方法公开(公告)号：US06716334B1
公开(公告)日：2004-04-06
申请号：US09829848
申请日：2001-04-09
IPC分类号： C25D502
CPC分类号： H01L21/67034 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/00 , C25D21/08 , C25D21/18
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译： 电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。 回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。 还提供废物通道，其具有与回收通道的入口不同的高度的入口。 电镀后，将晶片提升到一个位置并旋转。 在旋转的同时，将晶片用例如超纯水彻底冲洗。 晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。
-
公开(公告)号：US06214193B1
公开(公告)日：2001-04-10
申请号：US09374253
申请日：1999-08-13
IPC分类号： C25D502
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译： 电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。 回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。 还提供废物通道，其具有与回收通道的入口不同的高度的入口。 电镀后，将晶片提升到一个位置并旋转。 在旋转的同时，将晶片用例如超纯水彻底冲洗。 晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。
-
4.发明授权Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer 有权使用可变电流和质量传递电镀半导体晶片以获得均匀的镀层的方法
公开(公告)号：US06162344A
公开(公告)日：2000-12-19
申请号：US393226
申请日：1999-09-09
申请人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
发明人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
CPC分类号： C25D5/18 , C25D7/123 , Y10S205/915
摘要： In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region. As a result, the portion of the layer formed under these conditions is thinner near the edge of the wafer.
摘要翻译： 在电镀半导体晶片上的金属层时，电极端子所在的晶片边缘与晶片的中心之间的电阻电压降使得电镀速率在边缘比在中心处更大。 作为这种所谓的“终端效应”的结果，镀层倾向于是凹的。 通过首先将电流设置在相对低的电平直到电镀层足够厚以使电阻降可忽略，然后增加电流以提高电镀速率来克服该问题。 或者，可以使在较高电流下产生的层的部分略微凸起，以补偿在较低电流下产生的层的部分的凹形。 这是通过减少靠近晶片边缘的电镀溶液的质量传递来实现的，即在该区域中电镀过程被传质限制。 结果，在这些条件下形成的层的部分在晶片的边缘附近更薄。
-
公开(公告)号：US6074544A
公开(公告)日：2000-06-13
申请号：US121174
申请日：1998-07-22
申请人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
发明人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
CPC分类号： C25D5/18 , C25D7/123 , Y10S205/915
摘要： In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region. As a result, the portion of the layer formed under these conditions is thinner near the edge of the wafer.
-
6.发明授权Method of electroplating semicoductor wafer using variable currents and mass transfer to obtain uniform plated layer 有权使用可变电流和质量传递电镀半导体晶片的方法以获得均匀的镀层
公开(公告)号：US6110346A
公开(公告)日：2000-08-29
申请号：US393848
申请日：1999-09-09
申请人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
发明人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
CPC分类号： C25D5/18 , C25D7/123 , Y10S205/915
摘要： In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region. As a result, the portion of the layer formed under these conditions is thinner near the edge of the wafer.
摘要翻译： 在电镀半导体晶片上的金属层时，电极端子所在的晶片边缘与晶片的中心之间的电阻电压降使得电镀速率在边缘比在中心处更大。 作为这种所谓的“终端效应”的结果，镀层倾向于是凹的。 通过首先将电流设置在相对低的电平直到电镀层足够厚以使电阻降可忽略，然后增加电流以提高电镀速率来克服该问题。 或者，可以使在较高电流下产生的层的部分略微凸起，以补偿在较低电流下产生的层的部分的凹形。 这是通过减少靠近晶片边缘的电镀溶液的质量传递来实现的，即在该区域中电镀过程被传质限制。 结果，在这些条件下形成的层的部分在晶片的边缘附近更薄。
-
公开(公告)号：US07097410B1
公开(公告)日：2006-08-29
申请号：US10379858
申请日：2003-03-04
申请人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
发明人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
CPC分类号： H01L21/2885 , C25D17/001 , Y10S414/135 , Y10S414/136
摘要： The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.
摘要翻译： 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。
-
公开(公告)号：US06800187B1
公开(公告)日：2004-10-05
申请号：US09927741
申请日：2001-08-10
IPC分类号： C25D500
CPC分类号： H01L21/2885 , C23C18/1619 , C23C18/1628 , C23C18/163 , C23C18/1669 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/008
摘要： An apparatus for engaging a work piece during plating facilitates electrolyte flow during a plating operation. The apparatus helps to control the plating solution fluid dynamics and electric field shape to keep the wafer's local plating environment uniform and bubble free. The apparatus holding the work piece in a manner that facilitates electrolyte circulation patterns in which the electrolyte flows from the center of the work piece plating surface, outward toward the edge of the edge of the work piece. The apparatus holds the work piece near the work piece edges and provides a flow path for electrolyte to flow outward away from the edges of the work piece plating surface. That flow path has a “snorkel” shape in which the outlet is higher than the inlet. In addition, the flow path may have a slot shape that spans much or all of the circumference of holding apparatus. It may be made from a material that resists deformation and corrosion such as certain ceramics.
摘要翻译： 在电镀期间接合工件的装置有助于在电镀操作期间的电解液流动。 该设备有助于控制电镀溶液流体动力学和电场形状，以保持晶片的局部电镀环境均匀且无气泡。 该装置以便于电解质循环图案的方式保持工件，其中电解质从工件电镀表面的中心向外朝向工件边缘的边缘流动。 该装置将工件保持在工件边缘附近，并且提供了电解液从工件电镀表面的边缘向外流动的流动路径。 该流路具有“浮潜”形状，其中出口高于入口。 此外，流路可以具有跨越保持装置的大部分或全部圆周的槽形状。 它可以由抵抗诸如某些陶瓷的变形和腐蚀的材料制成。
-
公开(公告)号：US06527920B1
公开(公告)日：2003-03-04
申请号：US09706272
申请日：2000-11-03
IPC分类号： C25B1500
摘要： An electroplating apparatus prevents anode-mediated degradation of electrolyte additives by creating a mechanism for maintaining separate anolyte and catholyte and preventing mixing thereof within a plating chamber. The separation is accomplished by interposing a porous chemical transport barrier between the anode and cathode. The transport barrier limits the chemical transport (via diffusion and/or convection) of all species but allows migration of ionic species (and hence passage of current) during application of sufficiently large electric fields within electrolyte.
摘要翻译： 电镀装置通过产生用于维持单独的阳极电解液和阴极电解液并防止其在电镀室内的混合的机构来防止阳极介导的电解质添加剂的降解。 分离是通过在阳极和阴极之间插入多孔化学传输屏障来实现的。 运输屏障限制了所有物种的化学传输（通过扩散和/或对流），但是在电解质中施加足够大的电场期间允许离子物质的迁移（因此电流的流动）。
-
公开(公告)号：US07033465B1
公开(公告)日：2006-04-25
申请号：US10309414
申请日：2002-12-02
IPC分类号： C25D17/00
CPC分类号： C25D17/001 , C23C18/1605 , C23C18/1619 , C25D5/022
摘要： Certain mechanisms of a plating apparatus address problems associated with interaction between plating solutions or other processing solutions and the components of the plating apparatus (such as the electrical contacts). For example, a circumferential spray skirt around the interface of a “cup” and “cone” in the plating apparatus protects these features during plating. A shield mechanism contacts the cup and/or cone at the periphery of their interface to provide a fluid resistant seal. In some cases, the cone includes an outer circumferential lip that engages a complementary surface of the cup for this purpose. Further, a mechanism is provided for raising and lowering the work piece with the cone in order to allow in situ rinsing of the work piece and/or regions of the cup.
摘要翻译： 电镀装置的某些机构解决与电镀液或其他处理溶液与电镀装置（例如电触头）的组分之间的相互作用相关的问题。 例如，电镀装置中的“杯”和“锥体”的界面周围的周向喷涂裙部在电镀期间保护这些特征。 屏蔽机构在其界面的周边处接触杯和/或锥体以提供耐流体密封。 在一些情况下，锥体包括外圆周唇缘，其与杯的互补表面接合以达到此目的。 此外，提供了用于使锥体升高和降低工件的机构，以便允许工件和/或杯的区域的原位冲洗。
-
-
-
-
-
-
-
-
-
搜索结果
29 条记录 (耗时 0.03 秒)
