公开(公告)号：US20090137075A1

公开(公告)日：2009-05-28

申请号：US12155277

申请日：2008-06-02

Applicant: Jong In Yang ,  Sang Bum Lee ,  Si Hyuk Lee ,  Tae Hyung Kim

Inventor： Jong In Yang ,  Sang Bum Lee ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/007 ,  H01L33/44

Abstract: Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.

Abstract translation: 提供一种制造垂直LED的方法，该方法包括以下步骤：制备蓝宝石衬底; 形成其中n型氮化物半导体层，有源层和p型氮化物半导体层依次层压在蓝宝石衬底上的发光结构; 在p型氮化物半导体层上形成p电极; 在p电极上形成结构支撑层; 通过LLO（激光剥离）工艺去除蓝宝石衬底; 通过ISO（隔离）工艺将发光结构隔离成单元LED元件; 以及在隔离的发光结构的n型氮化物半导体层的每一个上形成n电极。

公开(公告)号：US08476639B2

公开(公告)日：2013-07-02

申请号：US13323365

申请日：2011-12-12

Applicant: Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

Inventor： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC: H01L29/15

CPC classification number: H01L21/268 ,  H01L33/0062 ,  H01L33/16

Abstract: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

Abstract translation: 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US07838315B2

公开(公告)日：2010-11-23

申请号：US12155277

申请日：2008-06-02

Applicant: Jong In Yang ,  Sang Bum Lee ,  Si Hyuk Lee ,  Tae Hyung Kim

Inventor： Jong In Yang ,  Sang Bum Lee ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/007 ,  H01L33/44

Abstract: Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.

Abstract translation: 提供一种制造垂直LED的方法，该方法包括以下步骤：制备蓝宝石衬底; 形成其中n型氮化物半导体层，有源层和p型氮化物半导体层依次层压在蓝宝石衬底上的发光结构; 在p型氮化物半导体层上形成p电极; 在p电极上形成结构支撑层; 通过LLO（激光剥离）工艺去除蓝宝石衬底; 通过ISO（隔离）工艺将发光结构隔离成单元LED元件; 以及在隔离的发光结构的n型氮化物半导体层的每一个上形成n电极。

公开(公告)号：US08110424B2

公开(公告)日：2012-02-07

申请号：US12419590

申请日：2009-04-07

Applicant: Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

Inventor： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC: H01L21/00

CPC classification number: H01L21/268 ,  H01L33/0062 ,  H01L33/16

Abstract: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

Abstract translation: 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US08110417B2

公开(公告)日：2012-02-07

申请号：US12885882

申请日：2010-09-20

Applicant: Jong In Yang ,  Yu Seung Kim ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

Inventor： Jong In Yang ,  Yu Seung Kim ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC: H01L21/00

CPC classification number: H01L21/3086 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract translation: 提供了在III族氮化物半导体衬底上形成图案的方法。 根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

公开(公告)号：US07816284B2

公开(公告)日：2010-10-19

申请号：US12429458

申请日：2009-04-24

Applicant: Jong In Yang ,  Yu Seung Kim ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

Inventor： Jong In Yang ,  Yu Seung Kim ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC: H01L21/00

CPC classification number: H01L21/3086 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract translation: 提供了在III族氮化物半导体衬底上形成图案的方法。 根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

公开(公告)号：US08334156B2

公开(公告)日：2012-12-18

申请号：US12648787

申请日：2009-12-29

Applicant: Cheol Kyu Kim ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

Inventor： Cheol Kyu Kim ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

IPC: H01L21/205

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/0075

Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Abstract translation: 氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。 根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。 这里，上部区域的掺杂浓度为下部区域的5倍以上。 优选地，上部区域中的基板的顶表面具有Ga极性。 此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。 优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

公开(公告)号：US20100105159A1

公开(公告)日：2010-04-29

申请号：US12648787

申请日：2009-12-29

Applicant: Cheol Kyu KIM ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

Inventor： Cheol Kyu KIM ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

IPC: H01L33/00 ,  C30B25/02

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/0075

Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Abstract translation: 氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。 根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。 这里，上部区域的掺杂浓度为下部区域的5倍以上。 优选地，上部区域中的基板的顶表面具有Ga极性。 此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。 优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

公开(公告)号：US07859086B2

公开(公告)日：2010-12-28

申请号：US11723065

申请日：2007-03-16

Applicant: Cheol Kyu Kim ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

Inventor： Cheol Kyu Kim ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

IPC: H01L33/00 ,  H01L29/04 ,  H01L29/12

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/0075

Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Abstract translation: 氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。 根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。 这里，上部区域的掺杂浓度为下部区域的5倍以上。 优选地，上部区域中的基板的顶表面具有Ga极性。 此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。 优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

公开(公告)号：US20070215983A1

公开(公告)日：2007-09-20

申请号：US11723065

申请日：2007-03-16

Applicant: Cheol Kyu Kim ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

Inventor： Cheol Kyu Kim ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

IPC: H01L29/12

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/0075

Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Abstract translation: 氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。 根据本发明的一个方面，在氮化物半导体单晶衬底中，沿厚度方向分割上下区域，氮化物单晶衬底的厚度至少为100μm。 这里，上部区域的掺杂浓度为下部区域的5倍以上。 优选地，上部区域中的基板的顶表面具有Ga极性。 此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。 优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。