公开(公告)号：US20120322187A1

公开(公告)日：2012-12-20

申请号：US13366696

申请日：2012-02-06

申请人： Jong-Hyun CHOUNG ,  Seon-il KIM ,  Ji-Young PARK ,  Jeanho SONG ,  Sanggab KIM ,  Shin Il CHOI ,  Youngchul PARK ,  Youngjun JIN ,  Suckjun LEE ,  O byoung KWON ,  Inho YU ,  Sanghoon JANG ,  Minki LIM

发明人： Jong-Hyun CHOUNG ,  Seon-il KIM ,  Ji-Young PARK ,  Jeanho SONG ,  Sanggab KIM ,  Shin Il CHOI ,  Youngchul PARK ,  Youngjun JIN ,  Suckjun LEE ,  O byoung KWON ,  Inho YU ,  Sanghoon JANG ,  Minki LIM

IPC分类号： H01L33/08 ,  H05K13/00 ,  C09K13/08

CPC分类号： H01L21/32134 ,  C09K13/08 ,  C23F1/18 ,  C23F1/26 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/4908

摘要： An etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof.

摘要翻译： 蚀刻剂包括：过硫酸盐; 氟化物 无机酸; 环胺; 磺酸; 和有机酸及其盐之一。

公开(公告)号：US20130252384A1

公开(公告)日：2013-09-26

申请号：US13556396

申请日：2012-07-24

申请人： Yong-Hwan RYU ,  Dae Ho KIM ,  Hong Sick PARK ,  Shin Il CHOI

发明人： Yong-Hwan RYU ,  Dae Ho KIM ,  Hong Sick PARK ,  Shin Il CHOI

IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/28 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/3212 ,  H01L21/76802 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/1288

摘要： A method of forming a thin film transistor array panel includes: forming a first insulating layer on a substrate; forming an amorphous carbon layer on the first insulating layer; forming a second insulating layer on the amorphous carbon layer; forming an opening in the amorphous carbon layer by patterning the second insulating layer and the amorphous carbon layer; and forming a trench in the first insulating layer by etching the first insulating layer, the etching the first insulating layer using the amorphous carbon layer including the opening as a mask.

公开(公告)号：US20130115733A1

公开(公告)日：2013-05-09

申请号：US13547783

申请日：2012-07-12

申请人： Bong-Kyun KIM ,  Hong Sick PARK ,  Wang Woo LEE ,  Young Woo PARK ,  Shin Il CHOI ,  Sang-Woo KIM ,  Ki-Beom LEE ,  Dae-Woo LEE ,  Sam-Young CHO ,  Jeong-Heon CHOI

发明人： Bong-Kyun KIM ,  Hong Sick PARK ,  Wang Woo LEE ,  Young Woo PARK ,  Shin Il CHOI ,  Sang-Woo KIM ,  Ki-Beom LEE ,  Dae-Woo LEE ,  Sam-Young CHO ,  Jeong-Heon CHOI

IPC分类号： H01L21/465 ,  C09K13/06 ,  C09K13/00

CPC分类号： H01L21/32134 ,  C09K13/06 ,  C09K13/08 ,  C09K13/10 ,  H01L21/465 ,  H01L29/7869

摘要： Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH4)2)S2O8, an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, and water.

摘要翻译： 提供了一种蚀刻剂组合物。 根据本发明的示例性实施方案的蚀刻剂组合物包括过硫酸铵（（NH 4）2）S2O8，唑类化合物，水溶性胺化合物，含磺酸化合物，含硝酸盐化合物和 水。

公开(公告)号：US20130088667A1

公开(公告)日：2013-04-11

申请号：US13410894

申请日：2012-03-02

申请人： Hyang-Shik KONG ,  Sung Hoon YANG ,  Se Hwan YU ,  Yong Hwan SHIN ,  Su Mi LEE ,  Shin Il CHOI

发明人： Hyang-Shik KONG ,  Sung Hoon YANG ,  Se Hwan YU ,  Yong Hwan SHIN ,  Su Mi LEE ,  Shin Il CHOI

IPC分类号： G02F1/1335 ,  H01L21/336

CPC分类号： G02F1/13439 ,  G02F1/133528 ,  G02F2001/133548 ,  G02F2001/133565

摘要： A manufacturing method of a liquid crystal display includes: forming an etch target layer including a conductive material on a first substrate; forming a first mask layer on the etch target layer; forming a block copolymer coating layer including a plurality of polymers on the first mask layer; processing the block copolymer coating layer to form a block copolymer pattern layer including first and second polymer blocks; removing one of the first or second polymer blocks to form a second mask pattern layer; etching the first mask layer by using the second mask pattern layer as an etching mask to form a first mask pattern layer; and etching the etch target layer by using the first mask pattern layer as an etching mask to form a first electrode. The first electrode includes a plurality of the first minute patterns extending in a predetermined direction and having a polarization function.

公开(公告)号：US20130277666A1

公开(公告)日：2013-10-24

申请号：US13612590

申请日：2012-09-12

申请人： Shin Il CHOI ,  Seung-Ha CHOI ,  Bong-Kyun KIM ,  Sang Gab KIM ,  Sho Yeon KIM ,  Hyun KIM ,  Hong Sick PARK ,  Su Bin BAE

发明人： Shin Il CHOI ,  Seung-Ha CHOI ,  Bong-Kyun KIM ,  Sang Gab KIM ,  Sho Yeon KIM ,  Hyun KIM ,  Hong Sick PARK ,  Su Bin BAE

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L27/12 ,  H01L29/24

CPC分类号： H01L27/1225

摘要： A thin film transistor array panel according to an exemplary embodiment of the invention includes: a substrate; a gate line positioned on the substrate and including a gate electrode; a gate insulating layer positioned on the gate line; an oxide semiconductor layer positioned on the substrate; a source electrode and a drain electrode positioned on the oxide semiconductor layer; a first insulating layer positioned on the source electrode and the drain electrode and including a first contact hole; a data line positioned on the first insulating layer and intersecting the gate line; and a pixel electrode over the first insulating layer. The source electrode and the drain electrode each comprise a metal oxide. The data line is electrically connected to the source electrode through the first contact hole.

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：基板; 位于所述基板上并包括栅电极的栅极线; 位于栅极线上的栅极绝缘层; 位于所述基板上的氧化物半导体层; 位于所述氧化物半导体层上的源电极和漏极; 位于所述源电极和所述漏极上并且包括第一接触孔的第一绝缘层; 位于所述第一绝缘层上且与所述栅极线相交的数据线; 以及在所述第一绝缘层上方的像素电极。 源电极和漏极各自包含金属氧化物。 数据线通过第一接触孔与源电极电连接。

公开(公告)号：US20130183822A1

公开(公告)日：2013-07-18

申请号：US13480242

申请日：2012-05-24

申请人： Dae Ho KIM ,  Bong-Kyun KIM ,  Yong-Hwan RYU ,  Hong Sick PARK ,  Wang Woo LEE ,  Shin Il CHOI

发明人： Dae Ho KIM ,  Bong-Kyun KIM ,  Yong-Hwan RYU ,  Hong Sick PARK ,  Wang Woo LEE ,  Shin Il CHOI

IPC分类号： H01L21/28

CPC分类号： H01L21/31116 ,  H01L21/02063 ,  H01L21/31144 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/42384

摘要： The present invention relates to a method for forming a trench that can remove residual particles in a trench using a metal mask, a method for forming a metal wire, and a method for manufacturing a thin film transistor array panel. The method for forming a trench includes: forming a first insulating layer on a substrate; forming a first metal layer on the first insulating layer; forming an opening by patterning the first metal layer; forming a trench by dry-etching the first insulating layer using the patterned first metal layer as a mask; and wet-etching the substrate. The dry-etching is performed using a main etching gas and a first auxiliary etching gas, and the first auxiliary etching gas includes argon.

摘要翻译： 本发明涉及使用金属掩模形成沟槽中的残留颗粒的形成方法，金属线形成方法以及薄膜晶体管阵列板的制造方法。 形成沟槽的方法包括：在衬底上形成第一绝缘层; 在所述第一绝缘层上形成第一金属层; 通过图案化第一金属层形成开口; 通过使用图案化的第一金属层作为掩模对第一绝缘层进行干蚀刻来形成沟槽; 并湿法蚀刻基板。 使用主蚀刻气体和第一辅助蚀刻气体进行干蚀刻，并且第一辅助蚀刻气体包括氩。