公开(公告)号：US08945992B2

公开(公告)日：2015-02-03

申请号：US13278664

申请日：2011-10-21

申请人： Joon-seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

发明人： Joon-seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

IPC分类号： H01L21/00 ,  H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49562 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.

摘要翻译： 设置在引线框架和功率器件封装中的功率器件裸片之间的金属片裸片附着片（DAP）降低了由半导体功率器件的不同热膨胀系数（CTE）引起的施加在半导体功率器件裸片上的应力 模具和引线框架。 此外，功率器件封装基本上防止杂质通过增加由金属片DAP产生的密封剂的表面爬电距离和引线框架的可选的模锻而渗透到功率器件封装中。

公开(公告)号：US08067826B2

公开(公告)日：2011-11-29

申请号：US11970911

申请日：2008-01-08

申请人： Joon-Seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

发明人： Joon-Seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

IPC分类号： H01L23/495

CPC分类号： H01L23/49562 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.

摘要翻译： 设置在引线框架和功率器件封装中的功率器件裸片之间的金属片裸片附着片（DAP）降低了由半导体功率器件的不同热膨胀系数（CTE）引起的施加在半导体功率器件裸片上的应力 模具和引线框架。 此外，功率器件封装基本上防止杂质通过增加由金属片DAP产生的密封剂的表面爬电距离和引线框架的可选的模锻而渗透到功率器件封装中。

公开(公告)号：US20120034741A1

公开(公告)日：2012-02-09

申请号：US13278664

申请日：2011-10-21

申请人： Joon-seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

发明人： Joon-seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

IPC分类号： H01L21/56

CPC分类号： H01L23/49562 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.

摘要翻译： 设置在引线框架和功率器件封装中的功率器件裸片之间的金属片裸片附着片（DAP）降低了由半导体功率器件的不同热膨胀系数（CTE）引起的施加在半导体功率器件裸片上的应力 模具和引线框架。 此外，功率器件封装基本上防止杂质通过增加由金属片DAP产生的密封剂的表面爬电距离和引线框架的可选的模锻而渗透到功率器件封装中。

公开(公告)号：US20080164589A1

公开(公告)日：2008-07-10

申请号：US11970911

申请日：2008-01-08

申请人： Joon-seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

发明人： Joon-seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49562 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.

摘要翻译： 设置在引线框架和功率器件封装中的功率器件裸片之间的金属片裸片附着片（DAP）降低了由半导体功率器件的不同热膨胀系数（CTE）引起的施加在半导体功率器件裸片上的应力 模具和引线框架。 此外，功率器件封装基本上防止杂质通过增加由金属片DAP产生的密封剂的表面爬电距离和引线框架的可选的模锻而渗透到功率器件封装中。

公开(公告)号：US07687903B2

公开(公告)日：2010-03-30

申请号：US12220638

申请日：2008-07-24

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H01L23/34

CPC分类号： H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/4951 ,  H01L23/49572 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/165 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Provided are a power module including a power package and a control package that are provided separately and can be highly integrated, and method of fabricating the power module. The power module includes: a molded power package including at least one power device on a first lead frame; and a molded control package vertically stacked on the power package, and including at least one control device on a second lead frame. A first part of the first lead frame and a first part of the second lead frame are coupled to each other so that the power package and the control package can be electrically coupled to each other.

摘要翻译： 提供了一种功率模块，其包括单独提供并且可以高度集成的功率封装和控制封装以及制造功率模块的方法。 功率模块包括：模制功率封装，其包括在第一引线框架上的至少一个功率器件; 以及垂直堆叠在所述功率封装上的模制控制组件，并且在第二引线框架上包括至少一个控制装置。 第一引线框架的第一部分和第二引线框架的第一部分彼此耦合，使得功率封装和控制封装可以彼此电耦合。

公开(公告)号：US20090194859A1

公开(公告)日：2009-08-06

申请号：US12358566

申请日：2009-01-23

申请人： In-goo Kang ,  O-seob Jeon ,  Joon-seo Son

发明人： In-goo Kang ,  O-seob Jeon ,  Joon-seo Son

IPC分类号： H01L23/495 ,  H01L21/71

CPC分类号： H01L23/49575 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49586 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a semiconductor package having a power device and methods of fabricating the same. The semiconductor package includes a lead frame, a polymer layer component on the lead frame, a metal layer component on the polymer layer component, and a semiconductor chip on the metal layer component. The polymer layer component may include a material formed by adding alumina Al2O3 an aluminum nitride (AlN), or a boron nitride BN to an epoxy resin. The polymer layer component may have high thermal conductivity and good electric insulating characteristics.

摘要翻译： 提供了具有功率器件的半导体封装及其制造方法。 半导体封装包括引线框架，引线框架上的聚合物层部件，聚合物层部件上的金属层部件和金属层部件上的半导体芯片。 聚合物层组分可以包括通过将氧化铝Al 2 O 3添加到氮化铝（AlN）或氮化硼BN至环氧树脂而形成的材料。 聚合物层组分可具有高导热性和良好的电绝缘特性。

公开(公告)号：US20090129028A1

公开(公告)日：2009-05-21

申请号：US12220638

申请日：2008-07-24

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H05K7/20 ,  H01L23/34 ,  H01L21/00

CPC分类号： H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/4951 ,  H01L23/49572 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/165 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Provided are a power module including a power package and a control package that are provided separately and can be highly integrated, and method of fabricating the power module. The power module includes: a molded power package including at least one power device on a first lead frame; and a molded control package vertically stacked on the power package, and including at least one control device on a second lead frame. A first part of the first lead frame and a first part of the second lead frame are coupled to each other so that the power package and the control package can be electrically coupled to each other.

摘要翻译： 提供了一种功率模块，其包括单独提供并且可以高度集成的功率封装和控制封装以及制造功率模块的方法。 功率模块包括：模制功率封装，其包括在第一引线框架上的至少一个功率器件; 以及垂直堆叠在所述功率封装上的模制控制组件，并且在第二引线框架上包括至少一个控制装置。 第一引线框架的第一部分和第二引线框架的第一部分彼此耦合，使得功率封装和控制封装可以彼此电耦合。

公开(公告)号：US20090127681A1

公开(公告)日：2009-05-21

申请号：US12262700

申请日：2008-10-31

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49575 ,  H01L21/565 ,  H01L23/16 ,  H01L23/4334 ,  H01L24/01 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00

摘要： Provided are a semiconductor package and a method of fabricating the same. The semiconductor package includes a first die-pad on which a semiconductor chip is mounted on a bottom surface of the first die-pad, a support plate disposed adjacent to a lateral surface of the first die-pad, a support prop protruding from the support plate, and supporting the first die-pad, and a package body that encapsulates the first die-pad, the semiconductor chip, and the support plate.

摘要翻译： 提供半导体封装及其制造方法。 半导体封装包括第一裸片焊盘，半导体芯片安装在第一裸片焊盘的底表面上，与第一裸片焊盘的侧表面相邻设置的支撑板，从支撑件突出的支撑支架 并且支撑第一管芯焊盘，以及封装体，其封装第一管芯焊盘，半导体芯片和支撑板。

公开(公告)号：US07199461B2

公开(公告)日：2007-04-03

申请号：US10762075

申请日：2004-01-21

申请人： Joon-seo Son ,  Shi-baek Nam ,  O-seob Jeon

发明人： Joon-seo Son ,  Shi-baek Nam ,  O-seob Jeon

IPC分类号： H01L23/52 ,  H01L23/495 ,  H05K7/20

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/1815 ,  H01L2924/00

摘要： A semiconductor package has a structure in which a leadframe pad to which a semiconductor die is attached and inner leads electrically connected to the leadframe pad are covered by a molded housing, and outer leads extending from the inner leads protrude from a side surface of the molded housing to the outside. The outer leads include a first outer lead disposed in a central portion of the molded housing, second and third outer leads respectively disposed in a right and left of the first outer lead. The second and third outer leads each have bent portions in portions where they are adjacent to the side surface of the molded housing, the bent portions protruding to increase a space between the first outer lead and the bent portions in the molded housing. At least one of the bent portions of the second and third outer leads is covered by an extended portion of the molded housing.

摘要翻译： 半导体封装具有其中附接有半导体管芯的引线框焊盘和与引线框垫片电连接的内部引线被模制壳体覆盖的结构，并且从内部引线延伸的外部引线从模制的侧表面突出 住房到外面。 外引线包括设置在模制壳体的中心部分中的第一外引线，分别设置在第一外引线的左右的第二外引线和第三外引线。 第二和第三外引线各自具有与模制壳体的侧表面相邻的部分的弯曲部分，弯曲部分突出以增加模制壳体中的第一外引线和弯曲部分之间的空间。 第二和第三外部引线的至少一个弯曲部分被模制外壳的延伸部分覆盖。

公开(公告)号：US08723304B2

公开(公告)日：2014-05-13

申请号：US12358566

申请日：2009-01-23

申请人： In-goo Kang ,  O-seob Jeon ,  Joon-seo Son

发明人： In-goo Kang ,  O-seob Jeon ,  Joon-seo Son

IPC分类号： H01L23/495

CPC分类号： H01L23/49575 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49586 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a semiconductor package having a power device and methods of fabricating the same. The semiconductor package includes a lead frame, a polymer layer component on the lead frame, a metal layer component on the polymer layer component, and a semiconductor chip on the metal layer component. The polymer layer component may include a material formed by adding alumina Al2O3, an aluminum nitride (AlN), or a boron nitride BN to an epoxy resin. The polymer layer component may have high thermal conductivity and good electric insulating characteristics.

摘要翻译： 提供了具有功率器件的半导体封装及其制造方法。 半导体封装包括引线框架，引线框架上的聚合物层部件，聚合物层部件上的金属层部件以及金属层部件上的半导体芯片。 聚合物层组分可以包括通过将氧化铝Al 2 O 3，氮化铝（AlN）或氮化硼BN添加到环氧树脂中而形成的材料。 聚合物层组分可具有高导热性和良好的电绝缘特性。