公开(公告)号：US08860196B2

公开(公告)日：2014-10-14

申请号：US13342372

申请日：2012-01-03

申请人： Joo-yang Eom ,  Joon-seo Son

发明人： Joo-yang Eom ,  Joon-seo Son

IPC分类号： H01L23/20 ,  H01L23/433 ,  H01L23/498 ,  H01L23/31 ,  H01L25/065 ,  H01L23/373 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L23/3735 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/49811 ,  H01L23/562 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L25/0655 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40225 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A semiconductor package and a method of manufacturing the same, and more particularly, to a package of a power module semiconductor and a method of manufacturing the same. The semiconductor package includes a substrate including a plurality of conductive patterns spaced apart from one another; a plurality of semiconductor chips disposed on the conductive patterns; a connecting member for electrically connecting the conductive patterns to each other, for electrically connecting the semiconductor chips to each other, or for electrically connecting the conductive pattern and the semiconductor chip; and a sealing member for covering the substrate, the semiconductor chips, and the connecting member, wherein a lower surface of the substrate and an upper surface of the connecting member are exposed to the outside by the sealing member.

摘要翻译： 半导体封装及其制造方法，更具体地说，涉及功率模块半导体的封装及其制造方法。 半导体封装包括包括彼此间隔开的多个导电图案的基板; 设置在导电图案上的多个半导体芯片; 连接构件，用于将导电图案彼此电连接，用于将半导体芯片彼此电连接，或用于电连接导电图案和半导体芯片; 以及用于覆盖基板，半导体芯片和连接构件的密封构件，其中基板的下表面和连接构件的上表面通过密封构件暴露于外部。

公开(公告)号：US07816784B2

公开(公告)日：2010-10-19

申请号：US12337513

申请日：2008-12-17

申请人： Joon-Seo Son ,  Romel N. Manatad ,  Armand Vincent Jereza

发明人： Joon-Seo Son ,  Romel N. Manatad ,  Armand Vincent Jereza

IPC分类号： H01L23/34

CPC分类号： H01L23/49524 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49562 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： Disclosed are PQFN semiconductor die packages for high-voltage, high-power applications, systems using the packages, and methods of making the packages. An exemplary package comprises a leadframe, a semiconductor die disposed on the leadframe, and a heat sink member disposed on the semiconductor die and the leadframe and integrated into the molding material of the package. The heat sink member has an electrically insulating substrate with a high breakdown voltage, and one or more conductive layers disposed on a first surface of the substrate that electrically interconnect the semiconductor to one or more leads of the leadframe.

摘要翻译： 公开了用于高电压，大功率应用的PQFN半导体管芯封装，使用封装的系统以及制造封装的方法。 示例性包装包括引线框架，设置在引线框架上的半导体管芯，以及设置在半导体管芯和引线框架上并集成到封装的成型材料中的散热构件。 散热构件具有具有高击穿电压的电绝缘衬底，以及设置在衬底的第一表面上的一个或多个导电层，其将半导体与引线框的一个或多个引线电连接。

公开(公告)号：US07687903B2

公开(公告)日：2010-03-30

申请号：US12220638

申请日：2008-07-24

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H01L23/34

CPC分类号： H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/4951 ,  H01L23/49572 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/165 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Provided are a power module including a power package and a control package that are provided separately and can be highly integrated, and method of fabricating the power module. The power module includes: a molded power package including at least one power device on a first lead frame; and a molded control package vertically stacked on the power package, and including at least one control device on a second lead frame. A first part of the first lead frame and a first part of the second lead frame are coupled to each other so that the power package and the control package can be electrically coupled to each other.

摘要翻译： 提供了一种功率模块，其包括单独提供并且可以高度集成的功率封装和控制封装以及制造功率模块的方法。 功率模块包括：模制功率封装，其包括在第一引线框架上的至少一个功率器件; 以及垂直堆叠在所述功率封装上的模制控制组件，并且在第二引线框架上包括至少一个控制装置。 第一引线框架的第一部分和第二引线框架的第一部分彼此耦合，使得功率封装和控制封装可以彼此电耦合。

公开(公告)号：US07675148B2

公开(公告)日：2010-03-09

申请号：US12074225

申请日：2008-02-28

申请人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-hyuk Lee ,  Yun-hwa Choi

发明人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-hyuk Lee ,  Yun-hwa Choi

IPC分类号： H01L23/495

CPC分类号： H01L24/96 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/05001 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05099 ,  H01L2924/00012

摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.

摘要翻译： 提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。 电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一 。 该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

公开(公告)号：US20090243078A1

公开(公告)日：2009-10-01

申请号：US12406757

申请日：2009-03-18

申请人： Seung-won Lim ,  O-soeb Jeon ,  Joon-seo Son ,  Byoung-ok Lee ,  Man-kyo Jong

发明人： Seung-won Lim ,  O-soeb Jeon ,  Joon-seo Son ,  Byoung-ok Lee ,  Man-kyo Jong

IPC分类号： H01L23/34 ,  H01L21/50 ,  H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/38 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L35/08 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： Provided are power device packages, which include thermal electric modules using the Peltier effect and thus can improve operational reliability by rapidly dissipating heat generated during operation to the outside, and methods of fabricating the same. An exemplary power device package includes: a thermal electric module having a first surface and a second surface opposite each other, and a plurality of n-type impurity elements and a plurality of p-type impurity elements alternately and electrically connected to each other in series; a lead frame attached to the first surface of the thermal electric module by an adhesive member; at least one power semiconductor chip and at least one control semiconductor chip, each chip being mounted on and electrically connected to the lead frame; and a sealing member sealing the thermal electric module, the chips, and at least a portion of the lead frame, but exposing the second surface of the module.

摘要翻译： 提供了功率器件封装，其包括使用珀尔帖效应的热电模块，并且因此可以通过快速耗散在外部产生的热量来提高操作可靠性及其制造方法。 一种示例性功率器件封装包括：具有第一表面和彼此相对的第二表面的热电模块，以及多个n型杂质元件和多个p型杂质元件串联交替和电连接 ; 引导框架，其通过粘合构件附接到热电模块的第一表面; 至少一个功率半导体芯片和至少一个控制半导体芯片，每个芯片安装在引线框架上并电连接到引线框架; 以及密封构件，其密封热电模块，芯片和引线框架的至少一部分，但暴露模块的第二表面。

公开(公告)号：US20090194859A1

公开(公告)日：2009-08-06

申请号：US12358566

申请日：2009-01-23

申请人： In-goo Kang ,  O-seob Jeon ,  Joon-seo Son

发明人： In-goo Kang ,  O-seob Jeon ,  Joon-seo Son

IPC分类号： H01L23/495 ,  H01L21/71

CPC分类号： H01L23/49575 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49586 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a semiconductor package having a power device and methods of fabricating the same. The semiconductor package includes a lead frame, a polymer layer component on the lead frame, a metal layer component on the polymer layer component, and a semiconductor chip on the metal layer component. The polymer layer component may include a material formed by adding alumina Al2O3 an aluminum nitride (AlN), or a boron nitride BN to an epoxy resin. The polymer layer component may have high thermal conductivity and good electric insulating characteristics.

摘要翻译： 提供了具有功率器件的半导体封装及其制造方法。 半导体封装包括引线框架，引线框架上的聚合物层部件，聚合物层部件上的金属层部件和金属层部件上的半导体芯片。 聚合物层组分可以包括通过将氧化铝Al 2 O 3添加到氮化铝（AlN）或氮化硼BN至环氧树脂而形成的材料。 聚合物层组分可具有高导热性和良好的电绝缘特性。

公开(公告)号：US20090129028A1

公开(公告)日：2009-05-21

申请号：US12220638

申请日：2008-07-24

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H05K7/20 ,  H01L23/34 ,  H01L21/00

CPC分类号： H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/4951 ,  H01L23/49572 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/165 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Provided are a power module including a power package and a control package that are provided separately and can be highly integrated, and method of fabricating the power module. The power module includes: a molded power package including at least one power device on a first lead frame; and a molded control package vertically stacked on the power package, and including at least one control device on a second lead frame. A first part of the first lead frame and a first part of the second lead frame are coupled to each other so that the power package and the control package can be electrically coupled to each other.

摘要翻译： 提供了一种功率模块，其包括单独提供并且可以高度集成的功率封装和控制封装以及制造功率模块的方法。 功率模块包括：模制功率封装，其包括在第一引线框架上的至少一个功率器件; 以及垂直堆叠在所述功率封装上的模制控制组件，并且在第二引线框架上包括至少一个控制装置。 第一引线框架的第一部分和第二引线框架的第一部分彼此耦合，使得功率封装和控制封装可以彼此电耦合。

公开(公告)号：US20090127685A1

公开(公告)日：2009-05-21

申请号：US12273373

申请日：2008-11-18

申请人： Man-kyo Jong ,  Joon-seo Son ,  Seung-won Lim ,  O-soeb Jeon

发明人： Man-kyo Jong ,  Joon-seo Son ,  Seung-won Lim ,  O-soeb Jeon

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L23/49562 ,  H01L23/4334 ,  H01L23/49575 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/4911 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2224/85399 ,  H01L2224/05599

摘要： Provided is a power device package including: a substrate including at least one first die attach region; at least one first power semiconductor chip and at least one second power semiconductor chip that are stacked in order on the first die attach region; at least one die attach paddle that is disposed between the at least one first power semiconductor chip and the at least one second power semiconductor chip, wherein the die attach paddle comprises an adhesive layer that is attached to a top surface of the first power semiconductor chip; a conductive pattern including a second die attach region, on which the second semiconductor chip is mounted, and a wire bonding region that is electrically connected to the second die attach region; and an interlayer member between the adhesive layer and the conductive pattern; and a plurality of firs leads electrically connected to at least one of the at least one first power semiconductor chip and the at least one second power semiconductor chip.

摘要翻译： 提供一种功率器件封装，包括：基板，包括至少一个第一管芯附着区域; 至少一个第一功率半导体芯片和至少一个第二功率半导体芯片，其依次堆叠在第一裸片附着区域上; 设置在所述至少一个第一功率半导体芯片和所述至少一个第二功率半导体芯片之间的至少一个芯片附接板，其中所述芯片附接板包括附着到所述第一功率半导体芯片的顶表面的粘合剂层 ; 包括其上安装有第二半导体芯片的第二管芯附着区域的导电图案和与第二管芯附着区域电连接的引线接合区域; 以及所述粘合剂层和所述导电图案之间的层间部件; 以及电连接到所述至少一个第一功率半导体芯片和所述至少一个第二功率半导体芯片中的至少一个的多个第一引线。

公开(公告)号：US20080224285A1

公开(公告)日：2008-09-18

申请号：US12074225

申请日：2008-02-28

申请人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-hyuk Lee ,  Yun-hwa Choi

发明人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-hyuk Lee ,  Yun-hwa Choi

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L24/96 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/05001 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05099 ,  H01L2924/00012

摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.

摘要翻译： 提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。 电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一 。 该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

公开(公告)号：US07199461B2

公开(公告)日：2007-04-03

申请号：US10762075

申请日：2004-01-21

申请人： Joon-seo Son ,  Shi-baek Nam ,  O-seob Jeon

发明人： Joon-seo Son ,  Shi-baek Nam ,  O-seob Jeon

IPC分类号： H01L23/52 ,  H01L23/495 ,  H05K7/20

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/1815 ,  H01L2924/00

摘要： A semiconductor package has a structure in which a leadframe pad to which a semiconductor die is attached and inner leads electrically connected to the leadframe pad are covered by a molded housing, and outer leads extending from the inner leads protrude from a side surface of the molded housing to the outside. The outer leads include a first outer lead disposed in a central portion of the molded housing, second and third outer leads respectively disposed in a right and left of the first outer lead. The second and third outer leads each have bent portions in portions where they are adjacent to the side surface of the molded housing, the bent portions protruding to increase a space between the first outer lead and the bent portions in the molded housing. At least one of the bent portions of the second and third outer leads is covered by an extended portion of the molded housing.

摘要翻译： 半导体封装具有其中附接有半导体管芯的引线框焊盘和与引线框垫片电连接的内部引线被模制壳体覆盖的结构，并且从内部引线延伸的外部引线从模制的侧表面突出 住房到外面。 外引线包括设置在模制壳体的中心部分中的第一外引线，分别设置在第一外引线的左右的第二外引线和第三外引线。 第二和第三外引线各自具有与模制壳体的侧表面相邻的部分的弯曲部分，弯曲部分突出以增加模制壳体中的第一外引线和弯曲部分之间的空间。 第二和第三外部引线的至少一个弯曲部分被模制外壳的延伸部分覆盖。