公开(公告)号：US08945992B2

公开(公告)日：2015-02-03

申请号：US13278664

申请日：2011-10-21

申请人： Joon-seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

发明人： Joon-seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

IPC分类号： H01L21/00 ,  H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49562 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.

摘要翻译： 设置在引线框架和功率器件封装中的功率器件裸片之间的金属片裸片附着片（DAP）降低了由半导体功率器件的不同热膨胀系数（CTE）引起的施加在半导体功率器件裸片上的应力 模具和引线框架。 此外，功率器件封装基本上防止杂质通过增加由金属片DAP产生的密封剂的表面爬电距离和引线框架的可选的模锻而渗透到功率器件封装中。

公开(公告)号：US08604606B2

公开(公告)日：2013-12-10

申请号：US12845299

申请日：2010-07-28

申请人： Joo-yang Eom ,  O-seob Jeon ,  Seung-won Lim ,  Seung-yong Choi

发明人： Joo-yang Eom ,  O-seob Jeon ,  Seung-won Lim ,  Seung-yong Choi

IPC分类号： H01L23/10 ,  H01L23/34

CPC分类号： H01L23/3675 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/562 ,  H01L25/165 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H05K1/0306 ,  H05K1/053 ,  H05K3/0061 ,  H05K3/284 ,  H05K3/341 ,  H05K3/3484 ,  H05K2201/0347 ,  H05K2201/09745 ,  H05K2203/0315 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided are a heat sink package in which a semiconductor package and a heat sink are bound to each other and a method of fabricating the same. The heat sink package includes a heat sink having a cavity on an upper surface thereof; a metal layer formed on the bottom surface of the cavity; a solder paste layer formed on the metal layer; a substrate on the solder paste layer; and a lead and a semiconductor chip mounted on the substrate.

摘要翻译： 提供一种其中半导体封装和散热器彼此结合的散热器封装及其制造方法。 散热器封装包括在其上表面上具有空腔的散热器; 形成在空腔的底面上的金属层; 形成在所述金属层上的焊膏层; 焊膏层上的基板; 以及安装在基板上的引线和半导体芯片。

公开(公告)号：US08067826B2

公开(公告)日：2011-11-29

申请号：US11970911

申请日：2008-01-08

申请人： Joon-Seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

发明人： Joon-Seo Son ,  O-seob Jeon ,  Taek-keun Lee ,  Byoung-ok Lee

IPC分类号： H01L23/495

CPC分类号： H01L23/49562 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.

摘要翻译： 设置在引线框架和功率器件封装中的功率器件裸片之间的金属片裸片附着片（DAP）降低了由半导体功率器件的不同热膨胀系数（CTE）引起的施加在半导体功率器件裸片上的应力 模具和引线框架。 此外，功率器件封装基本上防止杂质通过增加由金属片DAP产生的密封剂的表面爬电距离和引线框架的可选的模锻而渗透到功率器件封装中。

公开(公告)号：US07701048B2

公开(公告)日：2010-04-20

申请号：US11743829

申请日：2007-05-03

申请人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

发明人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

IPC分类号： H01L23/52

CPC分类号： H01L23/3735 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00

摘要： A power module with low thermal resistance buffers the stress put on a substrate during a package molding operation to virtually always prevent a fault in the substrate of the module. The power module includes a substrate, a conductive adhesive layer formed on the substrate, a device layer comprising a support tab, a power device, and a passive device which are formed on the conductive adhesive layer, and a sealing material hermetically sealing the device layer. The support tab is buffers the stress applied by a support pin to the substrate, thereby virtually always preventing a ceramic layer included in the substrate from cracking or breaking. As a result, a reduction in the isolation breakdown voltage of the substrate is virtually always prevented and the failure of the entire power module is do to a reduction in the breakdown voltage of the substrate is virtually always prevented.

摘要翻译： 具有低热阻的功率模块缓冲在封装成型操作期间施加在基板上的应力，几乎总是防止模块的衬底中的故障。 功率模块包括基板，形成在基板上的导电粘合剂层，形成在导电粘合剂层上的支撑突片，功率器件和无源器件的器件层，以及密封材料密封器件层 。 支撑片缓冲由支撑销施加到基板上的应力，从而实际上总是防止包含在基板中的陶瓷层破裂或断裂。 结果，实际上总是防止基板的隔离击穿电压的降低，并且实际上总是防止整个电源模块的故障，以致基板的击穿电压的降低。

公开(公告)号：US20090127681A1

公开(公告)日：2009-05-21

申请号：US12262700

申请日：2008-10-31

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49575 ,  H01L21/565 ,  H01L23/16 ,  H01L23/4334 ,  H01L24/01 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00

摘要： Provided are a semiconductor package and a method of fabricating the same. The semiconductor package includes a first die-pad on which a semiconductor chip is mounted on a bottom surface of the first die-pad, a support plate disposed adjacent to a lateral surface of the first die-pad, a support prop protruding from the support plate, and supporting the first die-pad, and a package body that encapsulates the first die-pad, the semiconductor chip, and the support plate.

摘要翻译： 提供半导体封装及其制造方法。 半导体封装包括第一裸片焊盘，半导体芯片安装在第一裸片焊盘的底表面上，与第一裸片焊盘的侧表面相邻设置的支撑板，从支撑件突出的支撑支架 并且支撑第一管芯焊盘，以及封装体，其封装第一管芯焊盘，半导体芯片和支撑板。

公开(公告)号：US20050056918A1

公开(公告)日：2005-03-17

申请号：US10974357

申请日：2004-10-26

申请人： Gi-young Jeun ,  Sung-min Park ,  Joo-sang Lee ,  Sung-won Lim ,  O-seob Jeon ,  Byoung-ok Lee ,  Young-gil Kim ,  Gwi-gyeon Yang

发明人： Gi-young Jeun ,  Sung-min Park ,  Joo-sang Lee ,  Sung-won Lim ,  O-seob Jeon ,  Byoung-ok Lee ,  Young-gil Kim ,  Gwi-gyeon Yang

IPC分类号： H01L21/56 ,  H01L23/433 ,  H01L23/495

CPC分类号： H01L21/565 ,  H01L23/4334 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/00015 ,  H01L2924/00012

摘要： A power module package is provided. The power module package includes a power circuit element, a control circuit element, a lead frame, a heat sink, and an epoxy molding compound (EMC). The control circuit element is connected to the power circuit and controls chips in the power circuit. The lead frame has external connecting means formed at the edges thereof, and a down set part, namely, formed between the external connecting means. The lead frame has a first surface to which the power circuit and the control circuit are attached, and a second surface used as a heat dissipating path, in particular, the power circuit is attached to the down set part. The heat sink which is closely attached to the down set part of the second surface of the lead frame by an adhesive. The EMC surrounds the power circuit, the control circuit, the lead frame and the heat sink, and exposes the external connecting means of the lead frame and a side of the heat sink.

摘要翻译： 提供电源模块封装。 功率模块封装包括电源电路元件，控制电路元件，引线框架，散热器和环氧树脂模塑料（EMC）。 控制电路元件连接到电源电路并控制电源电路中的芯片。 引线框架具有形成在其边缘处的外部连接装置和形成在外部连接装置之间的下降部分。 引线框架具有安装电源电路和控制电路的第一表面，并且用作散热路径的第二表面，特别地，电源电路附接到下降部件。 通过粘合剂紧密地附接到引线框架的第二表面的下降部分的散热器。 EMC围绕电源电路，控制电路，引线框架和散热器，并将引线框架的外部连接装置和散热片的一侧曝光。

公开(公告)号：US20100167470A1

公开(公告)日：2010-07-01

申请号：US12702615

申请日：2010-02-09

申请人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

发明人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

IPC分类号： H01L21/56 ,  H01L21/60

CPC分类号： H01L23/3735 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00

摘要： A power module with low thermal resistance buffers the stress put on a substrate during a package molding operation to virtually always prevent a fault in the substrate of the module. The power module includes a substrate, a conductive adhesive layer formed on the substrate, a device layer comprising a support tab, a power device, and a passive device which are formed on the conductive adhesive layer, and a sealing material hermetically sealing the device layer. The support tab is buffers the stress applied by a support pin to the substrate, thereby virtually always preventing a ceramic layer included in the substrate from cracking or breaking. As a result, a reduction in the isolation breakdown voltage of the substrate is virtually always prevented and the failure of the entire power module is do to a reduction in the breakdown voltage of the substrate is virtually always prevented.

摘要翻译： 具有低热阻的功率模块缓冲在封装成型操作期间施加在基板上的应力，几乎总是防止模块的衬底中的故障。 功率模块包括基板，形成在基板上的导电粘合剂层，形成在导电粘合剂层上的支撑突片，功率器件和无源器件的器件层，以及密封材料密封器件层 。 支撑片缓冲由支撑销施加到基板上的应力，从而实际上总是防止包含在基板中的陶瓷层破裂或断裂。 结果，实际上总是防止基板的隔离击穿电压的降低，并且实际上总是防止整个电源模块的故障，以致基板的击穿电压的降低。

公开(公告)号：US07687903B2

公开(公告)日：2010-03-30

申请号：US12220638

申请日：2008-07-24

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H01L23/34

CPC分类号： H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/4951 ,  H01L23/49572 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/165 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Provided are a power module including a power package and a control package that are provided separately and can be highly integrated, and method of fabricating the power module. The power module includes: a molded power package including at least one power device on a first lead frame; and a molded control package vertically stacked on the power package, and including at least one control device on a second lead frame. A first part of the first lead frame and a first part of the second lead frame are coupled to each other so that the power package and the control package can be electrically coupled to each other.

摘要翻译： 提供了一种功率模块，其包括单独提供并且可以高度集成的功率封装和控制封装以及制造功率模块的方法。 功率模块包括：模制功率封装，其包括在第一引线框架上的至少一个功率器件; 以及垂直堆叠在所述功率封装上的模制控制组件，并且在第二引线框架上包括至少一个控制装置。 第一引线框架的第一部分和第二引线框架的第一部分彼此耦合，使得功率封装和控制封装可以彼此电耦合。

公开(公告)号：US07675148B2

公开(公告)日：2010-03-09

申请号：US12074225

申请日：2008-02-28

申请人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-hyuk Lee ,  Yun-hwa Choi

发明人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-hyuk Lee ,  Yun-hwa Choi

IPC分类号： H01L23/495

CPC分类号： H01L24/96 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/05001 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05099 ,  H01L2924/00012

摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.

摘要翻译： 提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。 电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一 。 该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

公开(公告)号：US20090194859A1

公开(公告)日：2009-08-06

申请号：US12358566

申请日：2009-01-23

申请人： In-goo Kang ,  O-seob Jeon ,  Joon-seo Son

发明人： In-goo Kang ,  O-seob Jeon ,  Joon-seo Son

IPC分类号： H01L23/495 ,  H01L21/71

CPC分类号： H01L23/49575 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49586 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a semiconductor package having a power device and methods of fabricating the same. The semiconductor package includes a lead frame, a polymer layer component on the lead frame, a metal layer component on the polymer layer component, and a semiconductor chip on the metal layer component. The polymer layer component may include a material formed by adding alumina Al2O3 an aluminum nitride (AlN), or a boron nitride BN to an epoxy resin. The polymer layer component may have high thermal conductivity and good electric insulating characteristics.

摘要翻译： 提供了具有功率器件的半导体封装及其制造方法。 半导体封装包括引线框架，引线框架上的聚合物层部件，聚合物层部件上的金属层部件和金属层部件上的半导体芯片。 聚合物层组分可以包括通过将氧化铝Al 2 O 3添加到氮化铝（AlN）或氮化硼BN至环氧树脂而形成的材料。 聚合物层组分可具有高导热性和良好的电绝缘特性。