公开(公告)号：US07612388B2

公开(公告)日：2009-11-03

申请号：US09761240

申请日：2001-01-17

申请人： Josef-Georg Bauer ,  Heinrich Brunner ,  Hans-Joachim Schulze

发明人： Josef-Georg Bauer ,  Heinrich Brunner ,  Hans-Joachim Schulze

IPC分类号： H01L29/66 ,  H01L29/74

CPC分类号： H01L29/7395 ,  H01L29/1016 ,  H01L29/7455 ,  H01L29/749

摘要： The power semiconductor element has an emitter region and a stop zone in front of the emitter region. The conductivities of the emitter region and of the stop zone are opposed to one another. In order to reduce not only the static but also the dynamic loss of the power semiconductor foreign atoms are used in the stop-zone. The foreign atoms have at least one energy level within the band gap of the semiconductor and at least 200 meV away from the conduction band and valence band of the semiconductor.

摘要翻译： 功率半导体元件在发射极区域的前面具有发射极区域和停止区域。 发射极区域和停止区域的电导率彼此相反。 为了减少功率半导体的静态和动态损耗，在停止区域使用异质原子。 外来原子在半导体的带隙内具有至少一个能级，并且远离半导体的导带和价带至少200meV。

公开(公告)号：US06441408B2

公开(公告)日：2002-08-27

申请号：US09761241

申请日：2001-01-17

申请人： Alfred Porst ,  Helmut Strack ,  Anton Mauder ,  Hans-Joachim Schulze ,  Heinrich Brunner ,  Josef Bauer ,  Reiner Barthelmess

发明人： Alfred Porst ,  Helmut Strack ,  Anton Mauder ,  Hans-Joachim Schulze ,  Heinrich Brunner ,  Josef Bauer ,  Reiner Barthelmess

IPC分类号： H01L3300

CPC分类号： H01L29/1016 ,  H01L29/7395 ,  H01L29/7455 ,  H01L29/749

摘要： A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.

摘要翻译： 功率半导体元件具有停止区域。 为了优化功率半导体部件的静态和动态损耗，停止区域具有供体，其具有位于硅的带隙内的至少一个施主电平，并且距离导电带边缘至少200meV 硅。

公开(公告)号：US10651037B2

公开(公告)日：2020-05-12

申请号：US11232735

申请日：2005-09-22

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Holger Schulze

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Holger Schulze

IPC分类号： H01L21/265 ,  H01L29/66 ,  H01L21/304 ,  H01L29/10 ,  H01L21/324 ,  H01L21/263 ,  H01L29/08

摘要： One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the semiconductor body or applying a layer containing dopant particles to one side of the semiconductor body. The method also includes irradiating the semiconductor body via the one side with further particles at least in the region containing the dopant particles. The method finally includes carrying out a thermal treatment by means of which the semiconductor body is heated, at least in the region containing the dopant particles, to a predetermined temperature in order to activate the implanted dopant particles, said temperature being less than 700° C.

公开(公告)号：US09553178B2

公开(公告)日：2017-01-24

申请号：US12977755

申请日：2010-12-23

申请人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/4236

摘要： A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.

摘要翻译： 半导体部件包括第一导电类型的第一发射极区域，第二导电类型的第二发射极区域，布置在第一和第二发射极区域之间的第一基极区域和第一控制结构。 第一控制结构包括布置在第一发射区附近的控制电极，控制电极通过第一介电层与第一发射区绝缘，并沿着半导体部件的电流流动方向延伸。 第一控制结构包括第一控制连接和布置在第一控制连接和控制电极之间并且包括半导体材料的至少一个第一连接区域。

公开(公告)号：US09153674B2

公开(公告)日：2015-10-06

申请号：US12421322

申请日：2009-04-09

申请人： Hans-Joachim Schulze

发明人： Hans-Joachim Schulze

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/7395 ,  H01L29/0615 ,  H01L29/0696 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7393

摘要： A semiconductor device is disclosed. One embodiment provides a cell area and a junction termination area at a first side of a semiconductor zone of a first conductivity type. At least one first region of a second conductivity type is formed at a second side of the semiconductor zone. The at least one first region is opposed to the cell area region. At least one second region of the second conductivity type is formed at the second side of the semiconductor zone. The at least one second region is opposed to the cell area region and has a lateral dimension smaller than the at least first region.

摘要翻译： 公开了一种半导体器件。 一个实施例提供在第一导电类型的半导体区域的第一侧处的单元区域和结端接区域。 至少一个第二导电类型的第一区域形成在半导体区域的第二侧。 所述至少一个第一区域与所述单元区域区域相对。 第二导电类型的至少一个第二区域形成在半导体区域的第二侧。 所述至少一个第二区域与所述单元区域区域相对并且具有小于所述至少第一区域的横向尺寸。

公开(公告)号：US08993372B2

公开(公告)日：2015-03-31

申请号：US13407731

申请日：2012-02-28

申请人： Manfred Schneegans ,  Carsten Ahrens ,  Adolf Koller ,  Gerald Lackner ,  Anton Mauder ,  Hans-Joachim Schulze

发明人： Manfred Schneegans ,  Carsten Ahrens ,  Adolf Koller ,  Gerald Lackner ,  Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L21/00 ,  H01L21/36 ,  H01L21/02 ,  H01L21/762 ,  H01L29/861

CPC分类号： H01L21/02658 ,  H01L21/76202 ,  H01L21/76224 ,  H01L29/8611 ,  Y10T428/218

摘要： Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.

摘要翻译： 公开了一种用于制造具有多晶半导体体区域的半导体部件的制造方法的实施例，其中在半导体部件部分中在半导体主体的第一和第二表面之间产生多晶半导体本体区域，其中具有波长 至少1064nm的光束以聚焦到半导体主体的半导体部件部分中的位置的方式被引入半导体本体，并且其中该位置处的辐射的功率密度小于1×108W / cm 2。

公开(公告)号：US08946850B2

公开(公告)日：2015-02-03

申请号：US13312180

申请日：2011-12-06

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Frank Pfirsch

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Frank Pfirsch

IPC分类号： H01L31/058

CPC分类号： H01L23/62 ,  H01L27/0251 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/7803 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment of an integrated circuit, the integrated circuit includes a power transistor with a power control terminal, a first power load terminal and a second power load terminal. The integrated circuit further includes an auxiliary transistor with an auxiliary control terminal, a first auxiliary load terminal and a second auxiliary load terminal. The first auxiliary load terminal is electrically coupled to the power control terminal. The integrated circuit further includes a capacitor with a first capacitor electrode, a second capacitor electrode and a capacitor dielectric layer. The capacitor dielectric layer includes at least one of a ferroelectric material and a paraelectric material. The first capacitor electrode is electrically coupled to the auxiliary control terminal.

摘要翻译： 在集成电路的一个实施例中，集成电路包括具有功率控制端子的功率晶体管，第一功率负载端子和第二功率负载端子。 集成电路还包括具有辅助控制端子的辅助晶体管，第一辅助负载端子和第二辅助负载端子。 第一辅助负载端子电耦合到功率控制端子。 集成电路还包括具有第一电容器电极，第二电容器电极和电容器电介质层的电容器。 电容介质层包括铁电材料和顺电材料中的至少一种。 第一电容器电极电耦合到辅助控制端子。

公开(公告)号：US08772126B2

公开(公告)日：2014-07-08

申请号：US13571769

申请日：2012-08-10

申请人： Hans-Joachim Schulze ,  Anton Mauder

发明人： Hans-Joachim Schulze ,  Anton Mauder

IPC分类号： H01L21/8238 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/683 ,  H01L41/338

CPC分类号： H01L29/06 ,  B24B7/228 ,  B24B37/013 ,  B24B37/042 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3247 ,  H01L21/764 ,  H01L21/78 ,  H01L22/26 ,  H01L29/66333

摘要： A cavity is etched from a front surface into a semiconductor substrate. After providing an etch stop structure at the bottom of the cavity, the cavity is closed. From a back surface opposite to the front surface the semiconductor substrate is grinded at least up to an edge of the etch stop structure oriented to the back surface. Providing the etch stop structure at the bottom of an etched cavity allows for precisely adjusting a thickness of a semiconductor body of a semiconductor device.

摘要翻译： 将腔从前表面刻蚀成半导体衬底。 在腔的底部提供蚀刻停止结构之后，空腔被关闭。 从与前表面相对的后表面，半导体衬底至少被研磨到定向到后表面的蚀刻停止结构的边缘。 在蚀刻腔的底部提供蚀刻停止结构允许精确地调节半导体器件的半导体本体的厚度。

公开(公告)号：US08680645B2

公开(公告)日：2014-03-25

申请号：US13205759

申请日：2011-08-09

申请人： Franz Hirler ,  Anton Mauder ,  Hans-Joachim Schulze

发明人： Franz Hirler ,  Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/00 ,  H01L27/08 ,  H01L21/8238 ,  H01L21/04

CPC分类号： H01L29/0649 ,  H01L21/761 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66136 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8613 ,  H01L29/868

摘要： A semiconductor device having a semiconductor die is provided. The semiconductor die includes a main horizontal surface, an outer edge, an active area, and a peripheral area. The peripheral area includes a dielectric structure surrounding the active area and extending from the main horizontal surface into the semiconductor die. The dielectric structure includes, in a horizontal cross-section, at least one substantially L-shaped portion that is inclined against the outer edge. Further, a method for forming a semiconductor device is provided.

摘要翻译： 提供具有半导体管芯的半导体器件。 半导体管芯包括主水平表面，外边缘，有效区域和周边区域。 周边区域包括围绕有源区域并从主水平表面延伸到半导体管芯中的电介质结构。 电介质结构在水平截面中包括至少一个相对于外边缘倾斜的大致L形的部分。 此外，提供了一种用于形成半导体器件的方法。

公开(公告)号：US08659023B2

公开(公告)日：2014-02-25

申请号：US13610206

申请日：2012-09-11

申请人： Franz Hirler ,  Hans-Joachim Schulze

发明人： Franz Hirler ,  Hans-Joachim Schulze

IPC分类号： H01L31/036

CPC分类号： H01L21/02667 ,  C30B11/14 ,  C30B19/12 ,  C30B29/06 ,  C30B29/52 ,  C30B31/22 ,  H01L21/02532 ,  H01L21/02686

摘要： A monocrystalline layer having a first lattice constant on a monocrystalline substrate having a second lattice constant at least in a near-surface region, wherein the second lattice constant is different from the first lattice constant. Lattice matching atoms are implanted into the near-surface region. The near-surface region is momentarily melted. A layer is epitaxially deposited on the near-surface region that has solidified in monocrystalline fashion.

摘要翻译： 在单晶衬底上具有至少在近表面区域中具有第二晶格常数的第一晶格常数的单晶层，其中第二晶格常数不同于第一晶格常数。 将晶格匹配原子注入近表面区域。 近表面区域瞬间熔化。 外延沉积在已经以单晶固化的近表面区域上的层。