公开(公告)号：US09245760B2

公开(公告)日：2016-01-26

申请号：US12895664

申请日：2010-09-30

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Hans-Joerg Timme ,  Franz Hirler ,  Francisco Javier Santos Rodriguez

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Hans-Joerg Timme ,  Franz Hirler ,  Francisco Javier Santos Rodriguez

IPC分类号： H01L21/20 ,  H01L21/306 ,  H01L21/02 ,  H01L21/78 ,  H01L29/78

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/306 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/78 ,  H01L29/045 ,  H01L29/45 ,  H01L29/7846 ,  H01L29/7848

摘要： In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.

摘要翻译： 在一个实施例中，形成半导体器件的方法包括在衬底的顶表面上形成第一多孔半导体层。 在第一多孔半导体层上形成第一外延层。 在第一外延层内和上方形成电路。 在不完全氧化第一外延层的情况下形成电路。

公开(公告)号：US20140001514A1

公开(公告)日：2014-01-02

申请号：US13539944

申请日：2012-07-02

申请人： Hans-Joachim Schulze ,  Franz Hirler ,  Anton Mauder ,  Helmut Strack ,  Frank Kahlmann ,  Gerhard Miller

发明人： Hans-Joachim Schulze ,  Franz Hirler ,  Anton Mauder ,  Helmut Strack ,  Frank Kahlmann ,  Gerhard Miller

IPC分类号： H01L29/36 ,  H01L21/225

CPC分类号： H01L29/66348 ,  H01L21/2205 ,  H01L21/2658 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/102 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/7428 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/861 ,  H01L29/872

摘要： A semiconductor device includes a device region. The device region includes at least one device region section including dopant atoms of a first doping type and with a first doping concentration of at least 1E16 cm−3 and dopant atoms of a second doping type and with a second doping concentration of at least 1E16 cm−3.

摘要翻译： 半导体器件包括器件区域。 器件区域包括至少一个器件区域部分，其包括第一掺杂类型的掺杂剂原子和具有至少1E16cm-3的第一掺杂浓度和第二掺杂类型的掺杂剂原子，并且具有至少1E16cm的第二掺杂浓度 -3。

公开(公告)号：US08461648B2

公开(公告)日：2013-06-11

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/732

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

公开(公告)号：US20120256250A1

公开(公告)日：2012-10-11

申请号：US13082679

申请日：2011-04-08

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Franz Hirler

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Franz Hirler

IPC分类号： H01L27/06 ,  H01L21/336

CPC分类号： H01L21/823487 ,  H01L27/0694 ,  H01L27/1207 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component includes a sequence of layers, the sequence of layers including a first insulator layer, a first semiconductor layer disposed on the first insulator layer, a second insulator layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second insulator layer. The semiconductor component also includes a plurality of devices at least partly formed in the first semiconductor layer. A first one of the plurality of devices is a power transistor formed in a first region of the first semiconductor layer and a first region of the second semiconductor layer. The first region of the first and second semiconductor layers are in electrical contact with one another through a first opening in the second insulator layer.

摘要翻译： 半导体部件包括一层层，所述层序列包括第一绝缘体层，设置在第一绝缘体层上的第一半导体层，设置在第一半导体层上的第二绝缘体层，以及设置在第二绝缘体层上的第二半导体层 绝缘体层。 半导体部件还包括至少部分地形成在第一半导体层中的多个器件。 多个器件中的第一个是在第一半导体层的第一区域和第二半导体层的第一区域中形成的功率晶体管。 第一和第二半导体层的第一区域通过第二绝缘体层中的第一开口彼此电接触。

公开(公告)号：US20110215858A1

公开(公告)日：2011-09-08

申请号：US12718381

申请日：2010-03-05

申请人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H03K17/0412 ,  H01L29/739

CPC分类号： H01L29/739 ,  H03K17/0412

摘要： Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.

摘要翻译： 公开了一种用于控制双极半导体部件和双极型半导体部件的基极区域中的复合率的方法。

公开(公告)号：US20080067626A1

公开(公告)日：2008-03-20

申请号：US11834154

申请日：2007-08-06

申请人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder ,  Michael Rueb ,  Hans-Joachim Schulze ,  Helmut Strack ,  Armin Willmeroth

发明人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder ,  Michael Rueb ,  Hans-Joachim Schulze ,  Helmut Strack ,  Armin Willmeroth

IPC分类号： H01L29/94 ,  H01L21/76

CPC分类号： H01L21/76224 ,  H01L21/3247 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/66621 ,  H01L29/7803 ,  H01L29/7804

摘要： A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.

摘要翻译： 一种半导体器件，其中制造从半导体本体的表面进入半导体本体的第一沟槽部分。 在表面上方和第一沟槽部分之上产生半导体层。 在半导体层中产生另一沟槽部分，使得第一沟槽部分和另外的沟槽部分形成连续的沟槽结构。

公开(公告)号：US10211057B2

公开(公告)日：2019-02-19

申请号：US13197903

申请日：2011-08-04

申请人： Franz Hirler ,  Anton Mauder ,  Thomas Raker ,  Hans-Joachim Schulze ,  Wolfgang Werner

发明人： Franz Hirler ,  Anton Mauder ,  Thomas Raker ,  Hans-Joachim Schulze ,  Wolfgang Werner

IPC分类号： H01L21/26 ,  H01L29/08 ,  H01L29/78 ,  H01L21/265 ,  H01L29/739 ,  H01L29/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/165 ,  H01L29/167 ,  H01L29/32

摘要： A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7.

公开(公告)号：US09018674B2

公开(公告)日：2015-04-28

申请号：US13441364

申请日：2012-04-06

申请人： Dorothea Werber ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz Hirler ,  Alexander Philippou

发明人： Dorothea Werber ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz Hirler ,  Alexander Philippou

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/08

CPC分类号： H01L29/7396 ,  H01L29/0696 ,  H01L29/0834

摘要： A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side.

摘要翻译： 半导体包括布置在半导体主体的第一侧和第二侧之间的第一导电类型的漂移区。 半导体器件还包括第一导电类型的第一区域和沿着平行于第二侧面的第一方向布置的第二导电类型的第二区域。 半导体器件还包括邻近第一和第二区域的第二侧的电极。 半导体器件还包括布置在漂移区和第一区之间的第二导电类型的第三区。 第三区域与第二区域和第二区域隔开。

公开(公告)号：US08860025B2

公开(公告)日：2014-10-14

申请号：US13227206

申请日：2011-09-07

申请人： Anton Mauder ,  Franz Hirler ,  Hans-Peter Felsl ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Franz Hirler ,  Hans-Peter Felsl ,  Hans-Joachim Schulze

IPC分类号： H01L29/861 ,  H01L21/331 ,  H01L29/739 ,  H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L21/02576 ,  H01L21/302 ,  H01L29/0626 ,  H01L29/0692 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/6609 ,  H01L29/66136 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/861

摘要： A semiconductor device includes a semiconductor diode. The semiconductor diode includes a drift region and a first semiconductor region of a first conductivity type formed in or on the drift region. The first semiconductor region is electrically coupled to a first terminal via a first surface of a semiconductor body. The semiconductor diode includes a channel region of a second conductivity type electrically coupled to the first terminal, wherein a bottom of the channel region adjoins the first semiconductor region. A first side of the channel region adjoins the first semiconductor region.

摘要翻译： 半导体器件包括半导体二极管。 半导体二极管包括形成在漂移区中或漂移区上的漂移区和第一导电类型的第一半导体区。 第一半导体区域经由半导体本体的第一表面电耦合到第一端子。 半导体二极管包括电耦合到第一端子的第二导电类型的沟道区，其中沟道区的底部与第一半导体区相邻。 沟道区的第一侧邻接第一半导体区。

公开(公告)号：US20120037955A1

公开(公告)日：2012-02-16

申请号：US13197903

申请日：2011-08-04

申请人： Franz Hirler ,  Anton Mauder ,  Thomas Raker ,  Hans-Joachim Schulze ,  Wolfgang Werner

发明人： Franz Hirler ,  Anton Mauder ,  Thomas Raker ,  Hans-Joachim Schulze ,  Wolfgang Werner

IPC分类号： H01L27/06

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L29/04 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/167 ,  H01L29/32 ,  H01L29/7397 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7.

摘要翻译： 晶体管部件在半导体本体中包括源极区和第一导电类型的漂移区，以及与第一导电类型互补的第二导电类型的体区，布置在漂移区和源极区之间的体区。 所述晶体管部件还包括与所述源极区域和所述主体区域接触的源极电极，与所述主体区域相邻的栅极电极，并且通过栅极介电层与所述主体区域介电绝缘，以及连接在所述漂移区域 源电极。 二极管结构包括与半导体主体中的漂移区相邻的第一发射区和与第一发射区邻接的第一导电类型的第二发射极区。 第二发射极区域与源极连接，发射极效率γ小于0.7。