公开(公告)号：US6117623A

公开(公告)日：2000-09-12

申请号：US453460

申请日：1999-12-02

申请人： Jun Koshiyama ,  Futoshi Shimai ,  Hidehito Fukushima

发明人： Jun Koshiyama ,  Futoshi Shimai ,  Hidehito Fukushima

IPC分类号： H01L21/027 ,  C11D7/50 ,  C11D11/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/42 ,  H01L21/02 ,  H01L21/304 ,  C11D7/08

CPC分类号： C11D11/0047 ,  C11D7/5022 ,  G03F7/168 ,  G03F7/2026 ,  G03F7/32

摘要： While it is important in the photolithographic patterning of a photoresist layer on a substrate surface for the manufacture of various electronic devices that the pattern-wise light exposure of the photoresist layer is preceded by partial removal of the photoresist layer on the non-patterning areas such as marginal areas, peripheral areas and back surface opposite to the surface for resist patterning by dissolving away the extraneous photoresist layer with a remover solvent, the invention proposes an improvement in the partial removal of the photoresist layer by using a specific organic solvent or solvent mixture selected relative to the surface tension of the solvent which, in particular, is a mixture of .gamma.-butyrolactone and anisole in a mixing ratio of 70:30 to 97:3 by weight.

摘要翻译： 虽然在用于制造各种电子器件的基板表面上的光致抗蚀剂层的光刻图案中重要的是，光致抗蚀剂层的图案形式的曝光之前是在非图案化区域上部分去除光致抗蚀剂层， 作为边缘区域，外围区域和与表面相对的后表面，用于通过用除去溶剂溶解外部光致抗蚀剂图案来进行抗蚀剂图案化，本发明提出通过使用特定有机溶剂或溶剂混合物部分去除光致抗蚀剂层的改进 相对于溶剂的表面张力选择，其特别是以γ-甲内酯和苯甲醚的混合比为70:30-97:3的混合比。

公开(公告)号：US6015467A

公开(公告)日：2000-01-18

申请号：US859926

申请日：1997-05-21

申请人： Koichi Nagasawa ,  Naomi Kawaguchi ,  Futoshi Shimai ,  Mitsuru Sato ,  Kouji Harada ,  Jun Koshiyama

发明人： Koichi Nagasawa ,  Naomi Kawaguchi ,  Futoshi Shimai ,  Mitsuru Sato ,  Kouji Harada ,  Jun Koshiyama

IPC分类号： B08B3/10 ,  B08B3/12 ,  C11D7/06 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  G03F7/16 ,  G03F7/42 ,  H01L21/00 ,  B08B1/02 ,  B08B3/08

CPC分类号： C11D7/261 ,  B08B3/10 ,  B08B3/12 ,  C11D7/06 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/5022 ,  G03F7/162 ,  G03F7/425 ,  H01L21/6708 ,  C11D7/263

摘要： In a method of removing a coating from an edge of a substrate a solvent reservoir is filled with a solvent to dissolve and remove a photoresist film, the solvent includes one of dipropylene glycol monoalkyl ether, a mixture of this ether and an easily volatile organic solvent (boiling point of 75-130.degree. C., vapor pressure of 5-75 mmHg at 20.degree. C.), and an alkaline aqueous solution, an edge of a substrate W is horizontally inserted in the reservoir, and thereafter, the edge of the substrate W is immersed in the solvent for a period of time, so as to dissolve and remove a coating such as photoresist from the edge of the substrate. The solvent may be filled into the solvent reservoir either before or after the edge of the substrate is inserted therein, and the method may further involve aspirating the solvent from the reservoir after the substrate edge has been inserted therein.

摘要翻译： 在从基材的边缘去除涂层的方法中，溶剂储存器填充有溶剂以溶解并除去光致抗蚀剂膜，溶剂包括二丙二醇单烷基醚，该醚和易挥发的有机溶剂的混合物 （沸点75-130℃，20℃蒸气压5-75mmHg）和碱性水溶液，将基材W的边缘水平地插入储存器中，然后将边缘 将衬底W浸入溶剂中一段时间​​，从而从衬底的边缘溶解并除去诸如光致抗蚀剂的涂层。 在将基材的边缘插入其中之前或之后，可以将溶剂填充到溶剂容器中，并且该方法还可以包括在衬底边缘已插入其中之后从储存器吸出溶剂。

公开(公告)号：US20120141940A1

公开(公告)日：2012-06-07

申请号：US13307911

申请日：2011-11-30

申请人： Takahiro Shimizu ,  Yasushi Washio ,  Tomoyuki Ando ,  Jun Koshiyama

发明人： Takahiro Shimizu ,  Yasushi Washio ,  Tomoyuki Ando ,  Jun Koshiyama

IPC分类号： G03F7/20 ,  G03F7/027

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397

摘要： A chemically amplified positive-type photoresist composition for a thick film capable of forming a thick film resist pattern having superior resolving ability and controllability of dimensions, and being favorable in rectangularity, as well as a method for producing a thick film resist pattern using such a composition. The photoresist composition comprises an acid generator including a cationic moiety and an anionic moiety, and a resin whose alkali solubility increases by the action of an acid.

摘要翻译： 一种用于厚膜的化学放大型正型光致抗蚀剂组合物，其可以形成具有优异的分辨能力和尺寸可控性，并且矩形性好的厚膜抗蚀图案，以及使用这种方法制造厚膜抗蚀剂图案的方法 组成。 光致抗蚀剂组合物包括含有阳离子部分和阴离子部分的酸发生剂，以及碱溶解度随酸的作用而增加的树脂。

公开(公告)号：US20110056511A1

公开(公告)日：2011-03-10

申请号：US12662760

申请日：2010-05-03

申请人： Jun Koshiyama ,  Jiro Yokoya ,  Tomoyuki Hirano ,  Hiromitsu Tsuji

发明人： Jun Koshiyama ,  Jiro Yokoya ,  Tomoyuki Hirano ,  Hiromitsu Tsuji

IPC分类号： B08B7/00 ,  C11D3/43 ,  C11D3/44

CPC分类号： C11D1/72 ,  C11D1/667 ,  C11D1/722 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70925

摘要： Problem: To provide a cleaning liquid and a cleaning method having excellent leaning capability. In a process of liquid immersion lithography, they can preventing the damage to be caused by the component released from the photoresist to photoexposure devices; the waste treatment is easy; the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the production cost is reduced not detracting from the throughput in semiconductor production.Means for Solution: A cleaning liquid to be used for cleaning a photoexposure device in a process of liquid immersion lithography, which comprises at least 5% by mass of a nonionic surfactant containing at least one group selected from an ethyleneoxy group, a propyleneoxy group and a polyglycerin group, and a balance of water; and a cleaning method using it.

摘要翻译： 问题：提供具有优良倾斜能力的清洗液和清洗方法。 在液浸光刻的过程中，它们可以防止由光致抗蚀剂释放到光曝光装置上的组分引起的损伤; 废物处理容易; 用于液浸光刻介质的清洁液的替代效率高，并且降低了生产成本，而不会降低半导体生产中的生产量。 解决方法：在液浸光刻工艺中用于清洗曝光装置的清洗液，其包含至少5质量％的含有至少一种选自乙烯氧基，丙烯氧基和 聚甘油基团和余量的水; 和使用它的清洁方法。

公开(公告)号：US20110054184A1

公开(公告)日：2011-03-03

申请号：US12870439

申请日：2010-08-27

申请人： Masaaki Yoshida ,  Mai Sugawara ,  Jun Koshiyama

发明人： Masaaki Yoshida ,  Mai Sugawara ,  Jun Koshiyama

IPC分类号： C07F7/00 ,  C09K3/00

CPC分类号： C07F7/10 ,  H01L21/0271 ,  H01L21/306 ,  H01L21/3105

摘要： The object is to provide a surface treatment agent that can effectively prevent pattern collapse of an inorganic pattern or resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. In addition, as another object, the present invention has an object of providing a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent used in the surface treatment of a substrate contains a silylation agent and a silylated heterocyclic compound.

摘要翻译： 本发明的目的是提供一种表面处理剂，其能够有效地防止在基板上设置的无机图案或树脂图案的图案塌陷，以及使用这种表面处理剂的表面处理方法。 此外，作为另一个目的，本发明的目的是提供一种能够在基材表面上高度进行甲硅烷基化处理的表面处理剂和使用这种表面处理剂的表面处理方法。 用于底物表面处理的表面处理剂含有甲硅烷基化剂和甲硅烷基化杂环化合物。

公开(公告)号：US07897325B2

公开(公告)日：2011-03-01

申请号：US11296343

申请日：2005-12-08

申请人： Yoshihiro Sawada ,  Jun Koshiyama ,  Kazumasa Wakiya ,  Atsushi Miyamoto ,  Hidekazu Tajima

发明人： Yoshihiro Sawada ,  Jun Koshiyama ,  Kazumasa Wakiya ,  Atsushi Miyamoto ,  Hidekazu Tajima

IPC分类号： G03F7/26 ,  G03F7/40 ,  C11D7/04

CPC分类号： C11D7/3281 ,  C11D11/0047

摘要： The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.

摘要翻译： 本发明提供了一种用于在用于制造半导体器件和液晶显示面板的光刻工艺中用碱性显影剂水溶液显影的图案化光刻胶层的漂洗处理步骤中使用的新型冲洗溶液。 本发明提供的冲洗溶液为浓度高达10质量％的含氮杂环化合物如咪唑啉，吡啶等的水溶液。 任选地，本发明的冲洗溶液还含有水混溶性醇或乙醇酸有机溶剂和/或水溶性树脂。 本发明还提供了一种用于形成图案化光致抗蚀剂层的光刻方法，包括用上述定义的冲洗溶液冲洗处理碱显影抗蚀剂层的步骤。 本发明提供了关于产品质量和工艺效率的光刻工艺的改进。

公开(公告)号：US20100104987A1

公开(公告)日：2010-04-29

申请号：US12451747

申请日：2008-05-16

申请人： Atsushi Sawano ,  Jun Koshiyama ,  Takako Hirosaki

发明人： Atsushi Sawano ,  Jun Koshiyama ,  Takako Hirosaki

IPC分类号： G03F7/11 ,  C09D133/02 ,  C09D101/00

CPC分类号： H01L21/0276 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/091

摘要： A composition for forming an anti-reflection film for use in forming an anti-reflection film on a resist film is provided, the composition for forming an anti-reflection film being easily handled, and capable of forming an anti-reflection film having superior optical characteristics similarly to anti-reflection films formed using PFOS. A composition for forming an anti-reflection film to be provided on a resist film which includes a certain fluorine compound. This composition for forming an anti-reflection film can form an anti-reflection film having superior optical characteristics since the certain fluorine compound contributes to improvement of the optical characteristics of the anti-reflection film.

摘要翻译： 提供了用于在抗蚀剂膜上形成抗反射膜的防反射膜形成用组合物，用于形成抗反射膜的组合物易于处理，并且能够形成具有优异光学性的抗反射膜 特征与使用全氟辛烷磺酸形成的抗反射膜类似。 一种用于形成抗反射膜的组合物，其用于设置在包含某种氟化合物的抗蚀剂膜上。 用于形成抗反射膜的组合物可以形成具有优异的光学特性的抗反射膜，因为某些氟化合物有助于提高抗反射膜的光学特性。

公开(公告)号：US20080227678A1

公开(公告)日：2008-09-18

申请号：US11791836

申请日：2005-12-26

申请人： Jun Koshiyama ,  Yasumitsu Taira ,  Chima Shinohara

发明人： Jun Koshiyama ,  Yasumitsu Taira ,  Chima Shinohara

IPC分类号： G03F7/42

CPC分类号： G03F7/168

摘要： A cleaning liquid for lithography that exhibits equally excellent cleaning performance for resists of a wide variety of compositions, such as various resists for i-line, KrF and ArF, silicic resist and chemical amplification type positive resist, and that excels in post-treatment dryability, being free from any deterioration of resist performance by cleaning. There is provided a cleaning liquid for lithography, comprising at least one member (A) selected from among lower alkyl esters of acetic acid and propionic acid and at least one member (B) selected from among ketones having 5 to 7 carbon atoms per molecule in a mass ratio of (A):(B) of 4:6 to 7:3.

摘要翻译： 用于光刻的清洁液体，其具有相当优异的清洁性能，可用于各种组合物的抗蚀剂，例如用于i线，KrF和ArF的各种抗蚀剂，硅抗蚀剂和化学放大型正性抗蚀剂，并且具有优异的后处理干燥性 通过清洁没有抗蚀剂性能的任何劣化。 提供了一种用于光刻的清洁液体，其包含至少一种选自乙酸和丙酸的低级烷基酯和至少一种选自每分子具有5至7个碳原子的酮的成员（B） （A）:( B）的质量比为4：6〜7：3。

公开(公告)号：US09244358B2

公开(公告)日：2016-01-26

申请号：US13123341

申请日：2009-09-15

申请人： Jun Koshiyama ,  Kazumasa Wakiya

发明人： Jun Koshiyama ,  Kazumasa Wakiya

IPC分类号： C09K3/18 ,  G03F7/40 ,  H01L23/29 ,  G03F7/16 ,  H01L21/306 ,  G03F7/20

CPC分类号： G03F7/405 ,  C09K3/18 ,  G03F7/16 ,  G03F7/2041 ,  H01L21/306 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a surface treatment liquid which enables simple and efficient hydrophobilization of a substrate and prevention of collapse of a resin pattern or etched pattern. Also disclosed are a surface treatment method using the surface treatment liquid, a hydrophobilization method using the surface treatment liquid, and a hydrophobilized substrate. When a substrate is hydrophobilized, the substrate is coated with a surface treatment liquid containing a silylating agent and a hydrocarbon non-polar solvent. When a pattern is prevented from collapse, the surface of a resin pattern formed on a substrate or etched pattern formed on a substrate by etching is treated using a surface treatment liquid containing a silylating agent and a solvent.

摘要翻译： 公开了一种表面处理液体，其能够简单且有效地对基材进行疏水化，并防止树脂图案或蚀刻图案的塌陷。 还公开了使用表面处理液的表面处理方法，使用表面处理液的疏水化方法和疏水化基材。 当底物被疏水化时，用含有甲硅烷基化剂和烃类非极性溶剂的表面处理液涂覆基材。 当防止图案塌陷时，通过使用含有甲硅烷基化剂和溶剂的表面处理液对通过蚀刻形成在基板上形成的树脂图案的表面或蚀刻图案进行处理。

公开(公告)号：US08367312B2

公开(公告)日：2013-02-05

申请号：US12087545

申请日：2006-12-08

申请人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Hidekazu Tajima ,  Atsushi Miyamoto ,  Tomoya Kumagai ,  Atsushi Sawano

发明人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Hidekazu Tajima ,  Atsushi Miyamoto ,  Tomoya Kumagai ,  Atsushi Sawano

IPC分类号： C11D7/32 ,  C11D1/75

CPC分类号： G03F7/322

摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.

摘要翻译： 含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。 然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。 提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。 这种洗涤剂即使在低浓度时也保持低的表面张力。 有效抑制图形下降和缺陷发生。 它也可以抑制抗蚀剂图案的波动。