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    Optical disk with a plurality of radially extending marks for recording reflectance data of the optical disk
    4.
    发明授权
    Optical disk with a plurality of radially extending marks for recording reflectance data of the optical disk 有权
    具有用于记录光盘的反射率数据的多个径向延伸标记的光盘

    公开(公告)号：US07505392B2

    公开(公告)日：2009-03-17

    申请号：US10988707

    申请日：2004-11-16

    申请人： Reiji Tamura ,  Hiroshi Shirai

    发明人： Reiji Tamura ,  Hiroshi Shirai

    IPC分类号： G11B7/24

    CPC分类号： G11B7/00736 ,  G11B7/0053 ,  G11B7/24079 ,  G11B7/268 ,  Y10T428/21

    摘要： An optical disk includes a first area on which user information is recorded, and a second area in which a plurality of marks radially extending are arranged in a track direction in the optical disk. Information about the reflectance of the optical disk is recorded in the second area. It is intended to optimize the amplification factor of the reproduced signal on the basis of the information about the reflectance of the optical disk in the second area. Control data and user data can be reproduced quickly and highly reliably without depending on the relationship between the reflectances of a recording area and a non-recorded area of the optical disk.

    摘要翻译： 光盘包括其上记录有用户信息的第一区域和在光盘中沿轨道方向布置多个径向延伸的标记的第二区域。 关于光盘的反射率的信息被记录在第二区域中。 旨在基于关于第二区域中的光盘的反射率的信息来优化再现信号的放大系数。 控制数据和用户数据可以快速而高可靠地再现，而不依赖于记录区域的反射率与光盘的非记录区域之间的关系。

    Electrical connector
    5.
    发明申请
    Electrical connector 失效
    电连接器

    公开(公告)号：US20060003607A1

    公开(公告)日：2006-01-05

    申请号：US11218877

    申请日：2005-09-02

    申请人： Hiroshi Shirai ,  Shinichi Hashimoto

    发明人： Hiroshi Shirai ,  Shinichi Hashimoto

    IPC分类号： H01R12/00

    CPC分类号： H05K7/1069 ,  H01R12/714 ,  H01R13/24

    摘要： The electrical connector of the present invention has an insulative housing having a first face across from a first electrical circuit and a second face across from a second electrical circuit. A plurality of contacts are mounted in the insulative housing, each of which contacts a contact point of the first electrical circuit at the first face, and contacts a contact point of the second electrical circuit at the second face, thereby interconnecting the first and second circuits. Each of the contacts has one portion of the contact supported by the insulative housing so as to be capable of pivoting in response to the displacement of the first contact portion and the second contact portion.

    摘要翻译： 本发明的电连接器具有绝缘壳体，其具有与第一电路相对的第一面和跨越第二电路的第二面。 多个触点安装在绝缘壳体中，每个触点接触第一面处的第一电路的接触点，并且在第二面处接触第二电路的接触点，从而将第一和第二电路 。 每个触点具有由绝缘壳体支撑的触点的一部分，以便能够响应于第一接触部分和第二接触部分的位移而枢转。

    LGA socket contact
    6.
    发明授权
    LGA socket contact 失效
    LGA插座触点

    公开(公告)号：US06976888B2

    公开(公告)日：2005-12-20

    申请号：US10662006

    申请日：2003-09-12

    申请人： Hiroshi Shirai ,  Shinichi Hashimoto ,  Hidenori Taguchi

    发明人： Hiroshi Shirai ,  Shinichi Hashimoto ,  Hidenori Taguchi

    IPC分类号： H01R33/76 ,  H01R4/48 ,  H01R13/24 ,  H05K7/10

    CPC分类号： H01R13/2442 ,  H01R12/52 ,  H01R12/714 ,  H05K7/1069

    摘要： A land grid array socket contact has a resilient contact that extends parallel to a base plate and is attached to at least one side walls of the base plate by a curved section angled approximately 180 degrees from the at least one side wall. The resilient contact has a free end for contacting a contact pad. A board terminal extends from a lower end of the base plate for connection to a circuit board. In another embodiment, the land grid array socket contact has a resilient contact extending from an upper end of a base plate. The resilient contact has an elongated slit substantially in a center of the resilient contact with respect to a direction of width and a free end for contacting a contact pad. A board terminal extends from a lower end of the base plate for connection to a circuit board.

    摘要翻译： 平面栅格阵列插座接触件具有平行于基板延伸的弹性接触件，并且通过与所述至少一个侧壁成大约180度的弯曲部分附接到所述基板的至少一个侧壁。 弹性接触件具有用于接触接触垫的自由端。 板端子从基板的下端延伸以连接到电路板。 在另一个实施例中，焊盘格栅阵列插座接触件具有从基板的上端延伸的弹性接触。 弹性接触件具有相对于宽度方向基本上位于弹性接触件的中心的细长狭缝和用于接触接触垫的自由端。 板端子从基板的下端延伸以连接到电路板。

    Wafer defect measuring method and apparatus
    7.
    发明授权
    Wafer defect measuring method and apparatus 有权
    晶圆缺陷测量方法和装置

    公开(公告)号：US06734960B1

    公开(公告)日：2004-05-11

    申请号：US09589087

    申请日：2000-06-08

    申请人： Hiroyuki Goto ,  Hiroyuki Saito ,  Makiko Fujinami ,  Hiroshi Shirai

    发明人： Hiroyuki Goto ,  Hiroyuki Saito ,  Makiko Fujinami ,  Hiroshi Shirai

    IPC分类号： G01N2100

    CPC分类号： C30B29/06 ,  G01N21/95 ,  G01N21/956 ,  G01N25/00 ,  H01L22/12

    摘要： The depth and a relative dimensional factor of a defect present in the interior of a silicon wafer are measured, and the number of such defects is calculated. A laser beam having a larger energy than the band gap of silicon is radiated obliquely to the semiconductor wafer and a scattered beam from a defect present in a subsurface layer of the wafer is detected by an image pick-up device. The temperature of the wafer is changed to at least two temperatures of T1 and T2 or to any one of plural temperatures by means of a heater and the intensity of a scattered beam is measured. It is taken into account that the light absorbance of silicon and the penetration depth of light in silicon vary depending on temperature, to determine the depth and a relative dimensional factor of an internal defect which causes scattering of light, as well as the number of such crystal defects.

    摘要翻译： 测量存在于硅晶片内部的缺陷的深度和相对尺寸因子，并计算出这些缺陷的数量。 具有比硅的带隙大的能量的激光束被倾斜地辐射到半导体晶片，并且由图像拾取装置检测来自晶片的地下层中存在的缺陷的散射光束。 通过加热器将晶片的温度改变为T1和T2的至少两个温度或多个温度中的任何一个，并测量散射光束的强度。 考虑到硅的吸光度和硅中的光的穿透深度根据温度而变化，以确定导致光散射的内部缺陷的深度和相对尺寸因子，以及其数量 晶体缺陷。

    Method for measuring epitaxial film thickness of multilayer epitaxial wafer
    8.
    发明授权
    Method for measuring epitaxial film thickness of multilayer epitaxial wafer 失效
    测量多层外延晶片的外延膜厚度的方法

    公开(公告)号：US06025596A

    公开(公告)日：2000-02-15

    申请号：US19049

    申请日：1998-02-05

    申请人： Hiroshi Shirai ,  Kenji Akai ,  Toshio Abe ,  Chikara Tojima ,  Katsuyuki Iwata

    发明人： Hiroshi Shirai ,  Kenji Akai ,  Toshio Abe ,  Chikara Tojima ,  Katsuyuki Iwata

    IPC分类号： G01B11/06 ,  H01L21/66 ,  H01L29/739 ,  H01L29/78 ,  G01J5/02

    CPC分类号： G01B11/0625

    摘要： In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500 cm.sup.-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.

    摘要翻译： 在用于测量多层外延晶片的外延膜厚度的测量方法中，通过在至少500cm的远红外区域中使用红外辐射来测量具有不同电特性的至少两个外延层的多层外延晶片的反射率光谱 -1以下，对通过最大熵法得到的反射光谱进行频率分析，根据得到的分析光谱计算各外延层的膜厚。