公开(公告)号：US6051286A

公开(公告)日：2000-04-18

申请号：US918706

申请日：1997-08-22

申请人： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Stefan Wolff ,  Talex Sajoto

发明人： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Stefan Wolff ,  Talex Sajoto

IPC分类号： C23C16/44 ,  C23C16/52 ,  C23C16/08

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/52 ,  H01J2237/3321

摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

公开(公告)号：US06189482B1

公开(公告)日：2001-02-20

申请号：US08799415

申请日：1997-02-12

申请人： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Talex Sajoto ,  Stefan Wolff ,  Leonid Selyutin ,  Ashok Sinha

发明人： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Talex Sajoto ,  Stefan Wolff ,  Leonid Selyutin ,  Ashok Sinha

IPC分类号： C23C1600

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321

摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以200埃/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

公开(公告)号：US5983906A

公开(公告)日：1999-11-16

申请号：US918665

申请日：1997-08-22

申请人： Jun Zhao ,  Lee Luo ,  Jia-Xiang Wang ,  Xiao Liang Jin ,  Stefan Wolff ,  Talex Sajoto ,  Mei Chang ,  Paul Frederick Smith

发明人： Jun Zhao ,  Lee Luo ,  Jia-Xiang Wang ,  Xiao Liang Jin ,  Stefan Wolff ,  Talex Sajoto ,  Mei Chang ,  Paul Frederick Smith

IPC分类号： C23C14/00 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/285 ,  H01L21/31 ,  C23F1/00

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321 ,  Y10S438/905

摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

公开(公告)号：US5846332A

公开(公告)日：1998-12-08

申请号：US680724

申请日：1996-07-12

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32834 ,  H01J2237/2001

摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

摘要翻译： 衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。 本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。 放置在基座上的优选也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。 尽管其热隔离，外围环电连接到基座以防止电弧。 泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。

公开(公告)号：US06270859B1

公开(公告)日：2001-08-07

申请号：US09049856

申请日：1998-03-27

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C1634

摘要： A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.

公开(公告)号：US6129044A

公开(公告)日：2000-10-10

申请号：US409477

申请日：1999-10-06

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  C23C16/00 ,  G06F19/00

CPC分类号： C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/2001

摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

摘要翻译： 本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。 根据实施例，本发明提供了一种用于基板处理的装置。 该装置使热交换介质通过真空室的室主体中的通道循环，并将具有用于支撑基板的表面的加热器基座加热到加热器温度。 热交换介质的热交换温度为约60℃以下。 该设备还以流速将气体流入室中，以将膜沉积在基底上，其中流速提供了低于加热器温度的基底的有效温度，并且其中膜在沉积之后满足均匀性和电阻规格 一些基板。 在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。 因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

公开(公告)号：US5994678A

公开(公告)日：1999-11-30

申请号：US798004

申请日：1997-02-12

申请人： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Charles Dornfest ,  Stefan Wolff ,  Lee Luo ,  Eller Juco

发明人： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Charles Dornfest ,  Stefan Wolff ,  Lee Luo ,  Eller Juco

IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  H05B3/06 ,  C23C16/00

CPC分类号： C23C16/463 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/5096

摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许通过腔室的15升/分钟的流速具有最小的背侧沉积并且最小化在室的底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

公开(公告)号：US5968379A

公开(公告)日：1999-10-19

申请号：US800096

申请日：1997-02-12

申请人： Jun Zhao ,  Charles Dornfest ,  Talex Sajoto ,  Leonid Selyutin ,  Stefan Wolff ,  Lee Luo ,  Harold Mortensen ,  Richard Palicka

发明人： Jun Zhao ,  Charles Dornfest ,  Talex Sajoto ,  Leonid Selyutin ,  Stefan Wolff ,  Lee Luo ,  Harold Mortensen ,  Richard Palicka

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/52 ,  H01L21/00 ,  H01L21/687 ,  B23K10/00

CPC分类号： C23C16/4586 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/67103 ,  H01L21/68785 ,  H01L21/68792

摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

公开(公告)号：US5964947A

公开(公告)日：1999-10-12

申请号：US857847

申请日：1997-05-16

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32834 ,  H01J2237/2001

摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chamber. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

摘要翻译： 衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。 本发明减少了在排出室的泵送通道中导电材料的热沉积。 泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。

公开(公告)号：US06527865B1

公开(公告)日：2003-03-04

申请号：US09595767

申请日：2000-06-16

申请人： Talex Sajoto ,  Charles Dornfest ,  Leonid Selyutin ,  Jun Zhao ,  Vincent Ku ,  Xiao Liang Jin

发明人： Talex Sajoto ,  Charles Dornfest ,  Leonid Selyutin ,  Jun Zhao ,  Vincent Ku ,  Xiao Liang Jin

IPC分类号： C23C16000

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4402 ,  C23C16/4409 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/45561 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67017 ,  H01L21/6715

摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.

摘要翻译： 本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。 一方面，提供了一种用于控制在衬底处理室和系统中流过气体馈通的气体的装置和方法。 另一方面，提供沉积室用于沉积需要蒸发的BST和其它材料，特别是低挥发性前体，其作为液体输送到蒸发器以转化为气相，并且必须在升高的温度下运输以防止不必要的冷凝 在腔室部件上。 该室包括一系列加热的温度控制的内衬，例如加热的气体馈通。