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公开(公告)号：US20050220392A1
公开(公告)日：2005-10-06
申请号：US11091719
申请日：2005-03-29
CPC分类号： H01S5/026 , B82Y20/00 , G02B6/12004 , H01S5/0265 , H01S5/2206 , H01S5/2272 , H01S5/32358 , H01S5/32366 , H01S5/34306 , H01S5/3434 , H01S5/50
摘要： The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers, these layers are disposed on the GaAs substrate. The GaAs substrate provides first to third regions. The active layer includes first to third active layers disposed on respective regions of the substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the third active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.
摘要翻译： 本发明提供一种将有源器件与无源器件集成而不在两个器件之间没有对接结构的光学器件。 本发明的光集成器件包括GaAs衬底，第一和第二覆层以及由第一和第二覆层夹持的有源层，这些层设置在GaAs衬底上。 GaAs衬底提供第一至第三区域。 有源层包括设置在衬底的相应区域上的第一至第三有源层。 第一有源层具有量子阱结构，其带隙能量小于1.3eV，而第三有源层具有带隙能量大于第一有源层的量子阱结构的量子阱结构。
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公开(公告)号：US07405421B2
公开(公告)日：2008-07-29
申请号：US11089019
申请日：2005-03-25
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/131 , G02B2006/121 , H01S5/026 , H01S5/162 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/3434
摘要： The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers. These layers are disposed on the GaAs substrate. The GaAs substrate provides a first region and a second region. The active layer comprises of the first active layer disposed on the first region and the second active layer disposed on the second region of the GaAs substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the second active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.
摘要翻译： 本发明提供一种将有源器件与无源器件集成而不在两个器件之间没有对接结构的光学器件。 本发明的光集成器件包括GaAs衬底，第一和第二覆层，以及由第一和第二覆层夹持的有源层。 这些层设置在GaAs衬底上。 GaAs衬底提供第一区域和第二区域。 有源层包括设置在第一区域上的第一有源层和设置在GaAs衬底的第二区域上的第二有源层。 第一有源层具有量子阱结构，其带隙能量小于1.3eV，而第二有源层具有带隙能量大于第一有源层的量子阱结构的量子阱结构。
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公开(公告)号：US20050220391A1
公开(公告)日：2005-10-06
申请号：US11089019
申请日：2005-03-25
IPC分类号： H01S5/026 , G02B6/12 , G02B6/122 , G02B6/13 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/131 , G02B2006/121 , H01S5/026 , H01S5/162 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/3434
摘要： The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers. These layers are disposed on the GaAs substrate. The GaAs substrate provides a first region and a second region. The active layer comprises of the first active layer disposed on the first region and the second active layer disposed on the second region of the GaAs substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the second active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.
摘要翻译： 本发明提供一种将有源器件与无源器件集成而不在两个器件之间没有对接结构的光学器件。 本发明的光集成器件包括GaAs衬底，第一和第二覆层，以及由第一和第二覆层夹持的有源层。 这些层设置在GaAs衬底上。 GaAs衬底提供第一区域和第二区域。 有源层包括设置在第一区域上的第一有源层和设置在GaAs衬底的第二区域上的第二有源层。 第一有源层具有量子阱结构，其带隙能量小于1.3eV，而第二有源层具有带隙能量大于第一有源层的量子阱结构的量子阱结构。
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公开(公告)号：US20050220158A1
公开(公告)日：2005-10-06
申请号：US11091337
申请日：2005-03-29
CPC分类号： H01S5/026 , G02B6/12004 , G02B2006/12078 , H01L27/15 , H01S5/2004 , H01S5/222 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S2304/04
摘要： The present invention is to provide an optical integrated device formed on the GaAs substrate and with reduced dispersion of the optical coupling of the but-joint between the active and the passive devices. The GaAs substrate of the invention is divided into two regions, and the lower cladding layer extends over both regions. The active layer, having a quantum well structure with band-gap energy smaller than 1.3 eV, is arranged of the lower cladding layer in the first region, while the GaAs core layer is also arranged on the lower cladding layer but in the second region thereof. Thus, the cure layer may optically couple with the active layer.
摘要翻译： 本发明是提供一种在GaAs衬底上形成的光学集成器件，并且在有源器件和无源器件之间的耦合的光耦合的分散性降低。 本发明的GaAs衬底分为两个区域，下覆层在两个区域上延伸。 具有小于1.3eV的带隙能量的量子阱结构的有源层在第一区域中被布置成下包层，而GaAs芯层也布置在下包层上，但在其第二区域中 。 因此，固化层可以与活性层光学耦合。
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公开(公告)号：US07838893B2
公开(公告)日：2010-11-23
申请号：US11232242
申请日：2005-09-22
IPC分类号： H01L29/00
CPC分类号： H01S5/18308 , H01L33/02 , H01L33/105 , H01S5/18341 , H01S5/18358 , H01S5/3211 , H01S5/3235 , H01S2301/173
摘要： A semiconductor optical device comprises a first conductive type semiconductor region, an active layer provided on the second semiconductor portion of the first conductive type semiconductor region, a second conductive type semiconductor region on the side and top of the active layer, the side of the second semiconductor portion, and the second region of the first semiconductor portion of the first conductive type semiconductor region, a potential adjusting semiconductor layer provided between the second semiconductor portion of the first conductive type semiconductor region and the active layer, and first and second distributed Bragg reflector portions between which the first conductive type semiconductor region, the active layer and the second conductive type semiconductor region is provided. Bandgap energies of the first conductive type semiconductor region and second conductive type semiconductor region are greater than that of the active layer. The second region of the first semiconductor portion of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. A bandgap energy of the potential adjusting semiconductor layer is different from bandgap energies of the first conductive type semiconductor region and the second conductive type semiconductor region.
摘要翻译： 半导体光学器件包括第一导电类型半导体区域，设置在第一导电类型半导体区域的第二半导体部分上的有源层，在有源层的侧面和顶部上的第二导电类型半导体区域，第二导电类型半导体区域 半导体部分和第一导电类型半导体区域的第一半导体部分的第二区域，设置在第一导电类型半导体区域的第二半导体部分和有源层之间的电位调节半导体层，以及第一和第二分布布拉格反射器 设置有第一导电型半导体区域，有源层和第二导电型半导体区域的部分。 第一导电型半导体区域和第二导电型半导体区域的带隙能量大于有源层的带隙能量。 第一导电型半导体区域和第二导电型半导体区域的第一半导体部分的第二区域构成pn结。 电位调整用半导体层的带隙能不同于第一导电型半导体区域和第二导电型半导体区域的带隙能量。
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公开(公告)号：US20060043408A1
公开(公告)日：2006-03-02
申请号：US11210110
申请日：2005-08-24
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , H01S5/227
摘要： In a semiconductor optical device, a first conductive type semiconductor region includes first and second semiconductor portions. The first and second semiconductor portions are made of nitride mixed semiconductor crystal. This first semiconductor portion has a first region and a second region. The second semiconductor portion is provided on the first region of the first semiconductor portion. A second conductive type semiconductor region is made of nitride mixed semiconductor crystal. The second conductive type semiconductor region includes a first region and a second region. This second region of the first semiconductor portion of the first conductive type semiconductor region and the second region of the second conductive type semiconductor region constitute a pn junction. The sides of the second semiconductor portion of the first conductive type semiconductor region and the second region of the second conductive type semiconductor region constitute a pn junction. An active layer is made of nitride mixed semiconductor crystal. The active layer is provided between the second semiconductor portion of the first conductive type semiconductor region and the first region of the second conductive type semiconductor region. The bandgap energies of the first conductive type semiconductor region and the second conductive type semiconductor region are greater than that of the active layer.
摘要翻译： 在半导体光学器件中，第一导电型半导体区域包括第一和第二半导体部分。 第一和第二半导体部分由氮化物混合半导体晶体制成。 该第一半导体部分具有第一区域和第二区域。 第二半导体部分设置在第一半导体部分的第一区域上。 第二导电型半导体区域由氮化物混合半导体晶体制成。 第二导电型半导体区域包括第一区域和第二区域。 第一导电型半导体区域的第一半导体部分的第二区域和第二导电型半导体区域的第二区域构成pn结。 第一导电型半导体区域的第二半导体部分和第二导电类型半导体区域的第二区域的侧面构成pn结。 有源层由氮化物混合半导体晶体制成。 有源层设置在第一导电型半导体区域的第二半导体部分和第二导电类型半导体区域的第一区域之间。 第一导电型半导体区域和第二导电型半导体区域的带隙能量大于有源层的带隙能量。
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公开(公告)号：US20050135450A1
公开(公告)日：2005-06-23
申请号：US10822142
申请日：2004-04-12
CPC分类号： H01S5/18308 , H01S5/2209 , H01S5/222 , H01S5/3211 , H01S5/32366
摘要： This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is provided on a surface made of GaAs semiconductor. The active layer is provided on the first conductivity type semiconductor region. The active layer has a side surface. The second conductivity type semiconductor layer is provided on the active layer. The second conductivity type semiconductor layer has a side surface. The current block semiconductor region is provided on the side surface of the active layer and on the side surface of the second conductivity type semiconductor layer. The active layer is made of III-V compound semiconductor including at least nitrogen element as a V group element.
摘要翻译： 该表面发射半导体器件1包括第一导电类型半导体区域，有源层，第二导电类型半导体层和电流块半导体区域。 第一导电型半导体区域设置在由GaAs半导体制成的表面上。 有源层设置在第一导电类型半导体区域上。 活性层具有侧表面。 第二导电类型半导体层设置在有源层上。 第二导电型半导体层具有侧面。 当前块半导体区域设置在有源层的侧表面和第二导电类型半导体层的侧表面上。 有源层由至少包含氮元素作为V族元素的III-V族化合物半导体制成。
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公开(公告)号：US07208774B2
公开(公告)日：2007-04-24
申请号：US11152789
申请日：2005-06-15
IPC分类号： H01L29/24
CPC分类号： H01S5/227 , H01L33/06 , H01S5/2004 , H01S5/305 , H01S5/3211
摘要： In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active layer has a pair of side surfaces. A second conductive type semiconductor region is provided on the sides and top of the active layer, and the second region of the first conductive type semiconductor region. The bandgap energy of the first conductive type semiconductor region is greater than that of the active layer. The bandgap energy of the second conductive type semiconductor region is greater than that of the active layer. The second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.
摘要翻译： 在半导体光学器件中，在GaAs的表面上设置第一导电型半导体区域。 第一导电型半导体区域具有第一区域和第二区域。 有源层设置在第一导电类型半导体区域的第一区域上。 活性层具有一对侧表面。 第二导电型半导体区域设置在有源层的侧面和顶部以及第一导电类型半导体区域的第二区域上。 第一导电型半导体区域的带隙能量大于有源层的带隙能量。 第二导电型半导体区域的带隙能量大于有源层的带隙能量。 第一导电型半导体区域和第二导电型半导体区域的第二区域构成pn结。
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公开(公告)号：US20060060876A1
公开(公告)日：2006-03-23
申请号：US11232242
申请日：2005-09-22
IPC分类号： H01L33/00
CPC分类号： H01S5/18308 , H01L33/02 , H01L33/105 , H01S5/18341 , H01S5/18358 , H01S5/3211 , H01S5/3235 , H01S2301/173
摘要： A semiconductor optical device comprises a first conductive type semiconductor region, an active layer provided on the second semiconductor portion of the first conductive type semiconductor region, a second conductive type semiconductor region on the side and top of the active layer, the side of the second semiconductor portion, and the second region of the first semiconductor portion of the first conductive type semiconductor region, a potential adjusting semiconductor layer provided between the second semiconductor portion of the first conductive type semiconductor region and the active layer, and first and second distributed Bragg reflector portions between which the first conductive type semiconductor region, the active layer and the second conductive type semiconductor region is provided. Bandgap energies of the first conductive type semiconductor region and second conductive type semiconductor region are greater than that of the active layer. The second region of the first semiconductor portion of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. A bandgap energy of the potential adjusting semiconductor layer is different from bandgap energies of the first conductive type semiconductor region and the second conductive type semiconductor region.
摘要翻译： 半导体光学器件包括第一导电类型半导体区域，设置在第一导电类型半导体区域的第二半导体部分上的有源层，在有源层的侧面和顶部上的第二导电类型半导体区域，第二导电类型半导体区域 半导体部分和第一导电类型半导体区域的第一半导体部分的第二区域，设置在第一导电类型半导体区域的第二半导体部分和有源层之间的电位调节半导体层，以及第一和第二分布布拉格反射器 设置有第一导电型半导体区域，有源层和第二导电型半导体区域的部分。 第一导电型半导体区域和第二导电型半导体区域的带隙能量大于有源层的带隙能量。 第一导电型半导体区域和第二导电型半导体区域的第一半导体部分的第二区域构成pn结。 电位调整用半导体层的带隙能不同于第一导电型半导体区域和第二导电型半导体区域的带隙能量。
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公开(公告)号：US07379485B2
公开(公告)日：2008-05-27
申请号：US11230926
申请日：2005-09-21
CPC分类号： H01L33/105 , H01L33/02 , H01L33/32
摘要： In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The second semiconductor portion is provided on the first region of the first semiconductor portion. The active layer is provided on the second semiconductor portion of the first conductive type semiconductor region. The second conductive type semiconductor region is provided on the second region of the first semiconductor portion of the first conductive type semiconductor region. The side of the second semiconductor portion of the first conductive type semiconductor region, the top and side of the active layer, the second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. The first distributed Bragg reflector portion includes first distributed Bragg reflector layers and second distributed Bragg reflector layers which are arranged alternately. The second distributed Bragg reflector portion includes third distributed Bragg reflector layers and fourth distributed Bragg reflector layers which are arranged alternately. The first conductive type semiconductor region, the active layer and the second conductive type semiconductor region are provided between the first distributed Bragg reflector portion and the second distributed Bragg reflector layers.
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