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公开(公告)号：US20050220392A1
公开(公告)日：2005-10-06
申请号：US11091719
申请日：2005-03-29
CPC分类号： H01S5/026 , B82Y20/00 , G02B6/12004 , H01S5/0265 , H01S5/2206 , H01S5/2272 , H01S5/32358 , H01S5/32366 , H01S5/34306 , H01S5/3434 , H01S5/50
摘要： The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers, these layers are disposed on the GaAs substrate. The GaAs substrate provides first to third regions. The active layer includes first to third active layers disposed on respective regions of the substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the third active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.
摘要翻译： 本发明提供一种将有源器件与无源器件集成而不在两个器件之间没有对接结构的光学器件。 本发明的光集成器件包括GaAs衬底，第一和第二覆层以及由第一和第二覆层夹持的有源层，这些层设置在GaAs衬底上。 GaAs衬底提供第一至第三区域。 有源层包括设置在衬底的相应区域上的第一至第三有源层。 第一有源层具有量子阱结构，其带隙能量小于1.3eV，而第三有源层具有带隙能量大于第一有源层的量子阱结构的量子阱结构。
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公开(公告)号：US07405421B2
公开(公告)日：2008-07-29
申请号：US11089019
申请日：2005-03-25
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/131 , G02B2006/121 , H01S5/026 , H01S5/162 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/3434
摘要： The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers. These layers are disposed on the GaAs substrate. The GaAs substrate provides a first region and a second region. The active layer comprises of the first active layer disposed on the first region and the second active layer disposed on the second region of the GaAs substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the second active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.
摘要翻译： 本发明提供一种将有源器件与无源器件集成而不在两个器件之间没有对接结构的光学器件。 本发明的光集成器件包括GaAs衬底，第一和第二覆层，以及由第一和第二覆层夹持的有源层。 这些层设置在GaAs衬底上。 GaAs衬底提供第一区域和第二区域。 有源层包括设置在第一区域上的第一有源层和设置在GaAs衬底的第二区域上的第二有源层。 第一有源层具有量子阱结构，其带隙能量小于1.3eV，而第二有源层具有带隙能量大于第一有源层的量子阱结构的量子阱结构。
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公开(公告)号：US20050220391A1
公开(公告)日：2005-10-06
申请号：US11089019
申请日：2005-03-25
IPC分类号： H01S5/026 , G02B6/12 , G02B6/122 , G02B6/13 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/131 , G02B2006/121 , H01S5/026 , H01S5/162 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/3434
摘要： The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers. These layers are disposed on the GaAs substrate. The GaAs substrate provides a first region and a second region. The active layer comprises of the first active layer disposed on the first region and the second active layer disposed on the second region of the GaAs substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the second active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.
摘要翻译： 本发明提供一种将有源器件与无源器件集成而不在两个器件之间没有对接结构的光学器件。 本发明的光集成器件包括GaAs衬底，第一和第二覆层，以及由第一和第二覆层夹持的有源层。 这些层设置在GaAs衬底上。 GaAs衬底提供第一区域和第二区域。 有源层包括设置在第一区域上的第一有源层和设置在GaAs衬底的第二区域上的第二有源层。 第一有源层具有量子阱结构，其带隙能量小于1.3eV，而第二有源层具有带隙能量大于第一有源层的量子阱结构的量子阱结构。
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公开(公告)号：US20050220158A1
公开(公告)日：2005-10-06
申请号：US11091337
申请日：2005-03-29
CPC分类号： H01S5/026 , G02B6/12004 , G02B2006/12078 , H01L27/15 , H01S5/2004 , H01S5/222 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S2304/04
摘要： The present invention is to provide an optical integrated device formed on the GaAs substrate and with reduced dispersion of the optical coupling of the but-joint between the active and the passive devices. The GaAs substrate of the invention is divided into two regions, and the lower cladding layer extends over both regions. The active layer, having a quantum well structure with band-gap energy smaller than 1.3 eV, is arranged of the lower cladding layer in the first region, while the GaAs core layer is also arranged on the lower cladding layer but in the second region thereof. Thus, the cure layer may optically couple with the active layer.
摘要翻译： 本发明是提供一种在GaAs衬底上形成的光学集成器件，并且在有源器件和无源器件之间的耦合的光耦合的分散性降低。 本发明的GaAs衬底分为两个区域，下覆层在两个区域上延伸。 具有小于1.3eV的带隙能量的量子阱结构的有源层在第一区域中被布置成下包层，而GaAs芯层也布置在下包层上，但在其第二区域中 。 因此，固化层可以与活性层光学耦合。
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公开(公告)号：US08240746B2
公开(公告)日：2012-08-14
申请号：US12855393
申请日：2010-08-12
申请人： Hideaki Yamagishi , Kenji Koyama
发明人： Hideaki Yamagishi , Kenji Koyama
IPC分类号： B62D25/08
CPC分类号： B62D25/081 , B60R13/07 , B62D25/088
摘要： A vehicle front body structure includes a chassis number marking section on which a chassis number or vehicle identification number (VIN) is applied by stamping. The chassis number marking section is provided on a cowl assembly and disposed above a damper base to which an end of the cowl box is secured.
摘要翻译： 车身前部结构包括底盘编号标记部，通过冲压在其上施加底盘编号或车辆识别号（VIN）。 底盘编号标记部分设置在整流罩组件上，并设置在固定在前罩上端的阻尼器底座的上方。
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公开(公告)号：US08124543B2
公开(公告)日：2012-02-28
申请号：US12785860
申请日：2010-05-24
IPC分类号： H01L21/302
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/12 , H01S5/2086 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2222 , H01S5/2275 , H01S2301/176
摘要： A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF4 and O2, where CF4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF4 and O2, where CF4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF4 and O2, where CF4 in this step has the third partial pressure greater than the second partial pressure.
摘要翻译： 公开了一种制造LD的方法。 LD具有包括光学有源区域的条纹结构。 条状结构被树脂掩埋，通常是苯并环丁烯（BCB）。 在BCB层中形成开口的方法具有RIE的三步蚀刻。 第一步通过CF4和O2的混合气体部分地蚀刻BCB层，其中CF4具有第一分压，第二步通过CF4和O2的混合气体蚀刻BCB层顶部的光致抗蚀剂，其中CF4 在该步骤中具有小于第一分压的第二分压，第三步骤通过CF4和O2的混合气体蚀刻第一步中留下的BCB，其中该步骤中的CF 4具有大于第二分压的第三分压 。
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公开(公告)号：US20060261460A1
公开(公告)日：2006-11-23
申请号：US11495460
申请日：2006-07-31
申请人： Yusuke Sato , Kenji Koyama , Toshihiro Miura , Toshihiko Kyogoku
发明人： Yusuke Sato , Kenji Koyama , Toshihiro Miura , Toshihiko Kyogoku
IPC分类号： H01L23/02
CPC分类号： H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L25/165 , H01L2223/6655 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48195 , H01L2224/48227 , H01L2224/48465 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01037 , H01L2924/0105 , H01L2924/01058 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01088 , H01L2924/014 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03F1/0205 , H03F1/0283 , H03F3/195 , H03F2200/111 , H03F2200/18 , H03F2200/408 , H03F2200/451 , H05K1/0263 , H05K1/115 , H05K2201/09627 , H05K2201/0979 , H05K2203/049 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An electrode on a main surface of a module board, to which an emitter electrode of a semiconductor chip formed with a switching element of a power supply control circuit that supplies a power supply voltage to amplifier circuit parts of a power module of a digital cellular phone is electrically connected to a wiring in an internal layer of the module board through a plurality of viaholes. Further, the wiring CL1 is electrically connected to an electrode for the supply of the power supply voltage, which is provided on a back surface of the module board. Accordingly, an output characteristic of the semiconductor device is improved.
摘要翻译： 模块板的主表面上的电极，半导体芯片的发射极形成有电源控制电路的开关元件，该电源控制电路将电源电压提供给数字蜂窝电话的电源模块的放大器电路部分 通过多个通孔电连接到模块板的内层中的布线。 此外，布线CL1电连接到设置在模块板的背面上的用于提供电源电压的电极。 因此，提高了半导体器件的输出特性。
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8.发明授权Semiconductor device having switching elements around a central control circuit 失效具有围绕中央控制电路的开关元件的半导体器件公开(公告)号：US06441484B2
公开(公告)日：2002-08-27
申请号：US09859408
申请日：2001-05-18
申请人： Kenji Koyama , Norinaga Arai , Akio Mikami , Mamoru Iizuka
发明人： Kenji Koyama , Norinaga Arai , Akio Mikami , Mamoru Iizuka
IPC分类号： H01L2334
CPC分类号： H01L24/32 , H01L23/49562 , H01L23/49575 , H01L23/62 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05554 , H01L2224/29111 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/01026 , H01L2924/00012 , H01L2924/01082 , H01L2924/3512
摘要： A semiconductor device comprises: a first semiconductor chip having a control circuit; a plurality of second semiconductor chips whose operation is controlled by the control circuit; and a resin sealing body for sealing the first semiconductor chip and the plurality of second semiconductor chips, wherein: the first semiconductor chip is arranged in the central portion of the resin sealing body; and the plurality of second semiconductor chips are arranged on a periphery of the first semiconductor chip. A fuse element is further arranged outside the plurality of second semiconductor chips.
摘要翻译： 一种半导体器件包括：具有控制电路的第一半导体芯片; 多个第二半导体芯片，其操作由控制电路控制; 以及用于密封第一半导体芯片和多个第二半导体芯片的树脂密封体，其中：第一半导体芯片布置在树脂密封体的中心部分; 并且所述多个第二半导体芯片布置在所述第一半导体芯片的周围。 在多个第二半导体芯片的外侧进一步设置熔丝元件。
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9.发明授权
公开(公告)号：US6124394A
公开(公告)日：2000-09-26
申请号：US909935
申请日：1997-08-12
申请人： Mikio Goto , Yasumi Tanaka , Kenji Koyama
发明人： Mikio Goto , Yasumi Tanaka , Kenji Koyama
CPC分类号： C08K5/51 , B29C47/0004 , B29C47/0021 , B29C47/0026 , C08K3/04 , C08K3/32 , C09K21/12 , C09K21/14 , B29K2105/0026 , B29K2995/0059 , Y10T428/30
摘要： Fire retardant tablet is provided which is produced by tableting a fire retardant mixture containing heat-expandable graphite (A), and a water-soluble fire retardant synergist (B) or one containing additionally water-insoluble fire-retardant synergist (C). A method for fire retardation, a fire-retardant polymer composition, and a molded article of a fire-retardant resin by use of the fire retardant tablet are also provided. In the production of a fire retarding polymer composition containing heat-expandable graphite, the crushing of the heat-expandable graphite under melt-shearing is minimized.
摘要翻译： 提供阻燃片剂，其通过将含有热膨胀性石墨（A）的阻燃剂混合物和水溶性阻燃增效剂（B）或另外含有水不溶性阻燃增效剂（C）的阻燃剂混合物制成。 还提供了阻燃片的阻燃方法，阻燃聚合物组合物和阻燃树脂的模塑制品。 在制备含有热膨胀性石墨的阻燃聚合物组合物时，熔融剪切下的热膨胀石墨的破碎最小化。
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公开(公告)号：US5315502A
公开(公告)日：1994-05-24
申请号：US534089
申请日：1990-06-06
申请人： Kenji Koyama , Shoichi Uchihara
发明人： Kenji Koyama , Shoichi Uchihara
CPC分类号： G05B23/0229 , G05B23/0267 , Y10S706/912
摘要： Disclosed herein is a plant operation supporting method whereby a body of simulation data simulating the data admitted from a plant in error state is used along with a previously prepared body of knowledge to simulate various modes of plant operation and to have appropriate operation guides displayed for verification of the knowledge.
摘要翻译： 本文公开了一种植物操作支持方法，其中模拟从错误状态的植物获取的数据的模拟数据主体与预先准备的知识体系一起使用以模拟植物操作的各种模式并且具有显示用于验证的适当的操作指南 的知识。
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