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公开(公告)号：US4504865A
公开(公告)日：1985-03-12
申请号：US418677
申请日：1982-09-16
CPC分类号： H04N3/1568 , H04N9/045
摘要： From each of a plurality of picture element cells having a non-destructive readout characteristic, arranged two-dimensionally and connected to the same signal output line, an image signal is read out without mutual interference of the picture elements. To this end, a blanking period is provided between the readout periods of the respective picture element cells connected to the same signal output line and, in this blanking period, the signal output line is cleared (refreshed).
摘要翻译： 从具有非破坏性读出特性的多个像素单元中的每一个二维排列并连接到相同的信号输出线，在没有图像元素的相互干扰的情况下读出图像信号。 为此，在连接到同一信号输出线的各个像素单元的读出周期之间设置消隐期，在该消隐期间，信号输出线被清除（刷新）。
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公开(公告)号：US5552623A
公开(公告)日：1996-09-03
申请号：US134010
申请日：1993-10-12
申请人： Jun-ichi Nishizawa , Tadahiro Ohmi
发明人： Jun-ichi Nishizawa , Tadahiro Ohmi
IPC分类号： H01L23/556 , H01L27/108 , H01L29/10 , H01L29/49 , H01L29/772 , H01L29/78
CPC分类号： H01L29/4966 , H01L23/556 , H01L27/10808 , H01L29/105 , H01L29/4916 , H01L29/495 , H01L29/7722 , H01L29/78 , H01L2924/0002
摘要： A semiconductor device having a source region, a drain region and a channel region which are formed in a surface portion of a semiconductor substrate, and a gate formed with a material having a relatively high built-in voltage relative to the source region. This semiconductor device may further include, in the semiconductor substrate to extend along the channel region, a highly-doped region having a conductivity type opposite to that of the source region. This highly-closed region may have an impurity concentration gradient which is greater toward its portion facing the abovesaid surface of the substrate. These arrangements serve to prevent extinction of memory due to current leakage during absence of bias voltage which otherwise would develop in semiconductor devices having short-channel and thin gate oxide layer, and due to irradiation of alpha-particle onto the device.
摘要翻译： 具有形成在半导体基板的表面部分中的源极区域，漏极区域和沟道区域的半导体器件和形成有相对于源极区域具有相对较高内置电压的材料的栅极。 该半导体器件还可以在半导体衬底中沿沟道区域延伸具有与源极区域相反的导电类型的高掺杂区域。 这个高度封闭的区域可以具有对其面向衬底的上述表面的部分更大的杂质浓度梯度。 这些布置用于防止由于不存在偏置电压时的电流泄漏而导致的存储器的消光，否则将在具有短沟道和薄栅极氧化物层的半导体器件中以及由于α粒子照射到器件上而产生。
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公开(公告)号：US4692789A
公开(公告)日：1987-09-08
申请号：US516543
申请日：1983-07-22
CPC分类号： H01L24/33 , H01L23/66 , H01L24/32 , H01L24/49 , H01L2223/6644 , H01L2224/45014 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/01088 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/16195 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111
摘要： In a semiconductor apparatus for controlling a large current at a high speed, a lead conductor coupled to a control electrode of a semiconductor device sealed in a package comprises a conductor plate having a width equal to or greater than one side or a diameter of the semiconductor device, thereby decreasing impedance against a high-frequency input signal.
摘要翻译： 在用于高速控制大电流的半导体装置中，与密封在封装体中的半导体装置的控制电极耦合的引线导体包括宽度等于或大于半导体的一侧或直径的导体板 从而降低针对高频输入信号的阻抗。
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公开(公告)号：US4534033A
公开(公告)日：1985-08-06
申请号：US411080
申请日：1982-08-24
CPC分类号： H04B10/50 , H01S5/0422 , H01S5/0425 , H01S5/4031
摘要： A semiconductor laser includes an anode region of a first conductivity type made of a highly doped region, an active layer adjacent the anode region, a channel region made of a high-resistivity region and adjacent the active layer, a cathode region of a second conductivity type at one end of the channel region which is made of a highly doped region, and a gate region that surrounds at least part of said channel region and which is made of a highly doped region of the first conductivity type. The anode region and channel region have a wider band gap than that of the active layer.
摘要翻译： 半导体激光器包括由高掺杂区域构成的第一导电类型的阳极区域，与阳极区域相邻的有源层，由高电阻率区域形成并与有源层相邻的沟道区域，第二导电性的阴极区域 在由高掺杂区域制成的沟道区域的一端上形成栅极区域，以及围绕所述沟道区域的至少一部分并且由第一导电类型的高掺杂区域制成的栅极区域。 阳极区域和沟道区域具有比有源层宽的带隙。
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公开(公告)号：US4450466A
公开(公告)日：1984-05-22
申请号：US326883
申请日：1981-12-02
IPC分类号： H01L21/762 , H01L27/146 , H01L31/111 , H04N5/335 , H04N5/357 , H01L27/14 , H01L27/04 , H01L27/12 , H01L29/78
CPC分类号： H01L21/76216 , H01L27/14679 , H01L31/111
摘要： A semiconductor image sensor which comprises a plurality of image sensor cells, each having a photosensing and accumulation region of an n.sup.+ -p.sup.- -(i)-p.sup.+ -n.sup.+ (or p.sup.+ -n.sup.- -(i)-n.sup.+ -p.sup.+) hook structure which is formed by sequentially forming its respective regions in a semiconductor substrate inwardly thereof from its surface. The photosensing and accumulation regions are isolated by insulating isolation regions from adjacent ones of them. A tapering conductive region, which acts as an electric field lens on charged carriers, is formed to extend into a high resistivity layer of the photosensing region from the end face of each insulating isolation region on the side of the semiconductor substrate.
摘要翻译： 一种半导体图像传感器，包括多个图像传感器单元，每个图像传感器单元具有n + -p - （i）-p + -n +（或p + -n - （i）-n + -p +）钩的光敏和积聚区域 通过从其表面向内依次形成半导体衬底中的各自区域而形成的结构。 光敏和积聚区域通过绝缘隔离区域与其相邻区域隔离。 在电荷载流子上充当电场透镜的锥形导电区形成为从半导体衬底侧的每个绝缘隔离区的端面延伸到光敏区的高电阻率层。
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公开(公告)号：US4935798A
公开(公告)日：1990-06-19
申请号：US47292
申请日：1987-05-08
申请人： Jun-ichi Nishizawa , Tadahiro Ohmi
发明人： Jun-ichi Nishizawa , Tadahiro Ohmi
IPC分类号： H01L29/80 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/739 , H01L29/74
CPC分类号： H01L29/7392 , H01L29/0649 , H01L29/0834 , H01L29/1066 , H01L29/42312 , H01L29/7391
摘要： In a static induction type thyristor comprising a low impurity concentration channel region having opposed first and second major surfaces, a first main electrode region having one conductivity type and a second main electrode region having another conductivity type opposite to the one conductivity type and provided on the first and second major surfaces, respectively, and a gate region provided in the vicinity of the first main electrode region, there intervenes, between the channel region and the second main electrode region, a thin layer region having the same conductivity type as that of first main electrode region. The provision of this thin layer reegion contributes to allowing a markedly low impurity concentration as well as a decreased thickness of the channel region for a given maximum forward blocking voltage, making it feasible to obtain a high maximum forward blocking voltage and a high switching speed.
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公开(公告)号：US4558660A
公开(公告)日：1985-12-17
申请号：US475828
申请日：1983-03-16
申请人： Jun-ichi Nishizawa , Tadahiro Ohmi
发明人： Jun-ichi Nishizawa , Tadahiro Ohmi
IPC分类号： H01L21/205 , C30B25/02 , C30B25/10 , C30B33/00 , H01L21/268 , H01L21/31 , B05C11/00
CPC分类号： H01L21/67115 , C30B25/105 , C30B33/005 , H01L21/2686
摘要： A semiconductor fabricating apparatus is capable of fabricating a high quality semiconductor with utilization of crystal growth, thermal oxidation of CVD membrane growth at low temperature. The semiconductor fabricating apparatus includes a reaction chamber having a gas inlet and a gas outlet, an insulative support means disposed in the reaction chamber for supporting semiconductor wafers thereon, an infrared lamp means for irradiating exposed surfaces of the semiconductor wafers and an ultra-violet lamp means for irradiating the exposed surfaces of the semiconductor wafers overlappingly with the infrared irradiation.
摘要翻译： 半导体制造装置能够利用晶体生长，在低温下CVD膜生长的热氧化来制造高质量的半导体。 半导体制造装置包括具有气体入口和气体出口的反应室，设置在反应室中用于支撑半导体晶片的绝缘支撑装置，用于照射半导体晶片的暴露表面的红外灯装置和紫外线灯 用于以与红外线照射重叠的方式照射半导体晶片的暴露表面的装置。
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公开(公告)号：US4470059A
公开(公告)日：1984-09-04
申请号：US369606
申请日：1982-04-19
申请人： Jun-ichi Nishizawa , Tadahiro Ohmi
发明人： Jun-ichi Nishizawa , Tadahiro Ohmi
IPC分类号： H01L29/80 , H01L29/06 , H01L29/10 , H01L29/20 , H01L29/739 , H01L29/772
CPC分类号： H01L29/0653 , H01L29/1066 , H01L29/20 , H01L29/739 , H01L29/7722
摘要： A gallium arsenide static induction transistor of normally-off type simple in manufacture and exhibiting a superior function and suitable for use in low and medium power operation in integrated circuit is obtained by arranging so that its channel region has a length l (.mu.m), a width (.mu.m) and an impurity concentration N (cm.sup.-3), and that the ratio l/w is 0.5-5.0 and that the product Nw.sup.2 is not larger than 2.5.times.10.sup.15 cm.sup.-3..mu.m.sup.2.
摘要翻译： 通过布置使得其通道区域具有长度l（μm），获得了常规关闭型砷化镓静电感应晶体管，其制造简单并且表现出优异的功能并且适用于集成电路中的低功率和中等功率操作， 宽度（μm）和杂质浓度N（cm-3），比率l / w为0.5-5.0，产品Nw2不大于2.5×10 15 cm -3。 亩。
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公开(公告)号：US4400710A
公开(公告)日：1983-08-23
申请号：US210531
申请日：1980-11-25
IPC分类号： H01L21/331 , H01L29/68 , H01L29/73 , H01L29/739 , H01L29/74 , H01L29/78 , H01L29/80 , H01L29/48
CPC分类号： H01L29/7839 , H01L29/739 , H01L29/7392 , H01L29/80 , H01L29/806
摘要： A semiconductor device having its carrier-injecting region formed with a Schottky structure, and arranged so that the current flowing through the Schottky barrier by virtue of tunnel effect is controlled by a controlling electrode to thereby control the drain or collector or anode current. Thus, this device has a large current density and a large current gain. This device can be used not only as a discrete one, but also it is quite suitable when applied to integrated circuits.
摘要翻译： 一种半导体器件，其载流子注入区域形成肖特基结构，并配置为通过控制电极控制流过肖特基势垒的电流，从而控制漏极或集电极或阳极电流。 因此，该器件具有大的电流密度和大的电流增益。 该器件不仅可以作为离散器件使用，而且还适用于集成电路。
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公开(公告)号：US4377817A
公开(公告)日：1983-03-22
申请号：US130775
申请日：1980-03-17
申请人： Jun-ichi Nishizawa , Tadahiro Ohmi
发明人： Jun-ichi Nishizawa , Tadahiro Ohmi
IPC分类号： H01L29/80 , H01L27/146 , H01L31/112 , H04N5/335 , H04N5/374
CPC分类号： H01L31/1126 , H01L27/1464 , H01L27/14679
摘要： This invention relates to a semiconductor image sensors and more particularly, to a back-illuminated-type static induction transistor image sensors.FIGS. 4A to 4C show the back illuminated type SIT image sensors operating in the electron depletion storing mode, where the n.sup.+ buried floating region 23 serves as storage region.
摘要翻译： 本发明涉及一种半导体图像传感器，更具体地说，涉及背照式静电感应晶体管图像传感器。 图 图4A至4C示出了以电子耗尽存储模式操作的背照式SIT图像传感器，其中n +掩埋浮动区域23用作存储区域。
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