公开(公告)号：US5093282A

公开(公告)日：1992-03-03

申请号：US648311

申请日：1991-01-29

申请人： Jun-ichi Ohno ,  Koh-ichi Fukazawa ,  Masamichi Shindo

发明人： Jun-ichi Ohno ,  Koh-ichi Fukazawa ,  Masamichi Shindo

IPC分类号： H01L23/12 ,  D21H27/02 ,  D21H27/20 ,  H01L23/02 ,  H01L23/04 ,  H01L23/057 ,  H01L23/14 ,  H01L23/36 ,  H01L23/50

CPC分类号： H01L23/36 ,  H01L23/057 ,  H01L23/142 ,  H01L2224/32188 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/16152 ,  Y10T29/4913

摘要： Disclosed is a method for making a semiconductor device in which the Pin Grid Array (PGA) is improved so that a plurality of lead pins project from the undersurface of a metal base of a package substrate as input and output terminals of a Large Scale Integrated-circuit (LSI). The method comprises mounting a semiconductor chip on a heat sink to the base, superposing a printed circuit board on the base and connecting electrical lead pins to the outer ends of wiring patterns which are formed radially and downwardly projecting through the base, and assembling a metal shell to the upper surface of the base and covering the chip, bonding wires and wiring patterns, wherein the patterns are formed such that the outer ends of the patterns are located within the vicinity over the outermost rows and columns of through holes for connecting lead pins. Furthermore, in the method of producing the device, a central portion patterning wiring layer, which is electrically short-circuited for gold plating, is provided in order to stabilize the connection with the bonding wires, and this center layer is cut off after the short circuit is performed.

公开(公告)号：US09224645B2

公开(公告)日：2015-12-29

申请号：US13980998

申请日：2011-09-09

申请人： Jun-ichi Ohno

发明人： Jun-ichi Ohno

IPC分类号： H01L21/768 ,  H01L23/482 ,  H01L21/04 ,  H01L29/45 ,  H01L29/66 ,  H01L29/872 ,  H01L21/3065 ,  H01L29/16 ,  H01L29/861

CPC分类号： H01L21/76889 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/3065 ,  H01L23/4827 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicon carbide semiconductor device includes: a silicon carbide layer, a reaction layer which is in contact with the silicon carbide layer, a conductive oxidation layer which is in contact with the reaction layer, and an electrode layer which is formed over the reaction layer with the conductive oxidation layer interposed therebetween. A thickness of the conductive oxidation layer falls within a range of 0.3 nm to 2.25 nm.

摘要翻译： 碳化硅半导体器件包括：碳化硅层，与碳化硅层接触的反应层，与反应层接触的导电氧化层，和形成在反应层上的电极层， 导电氧化层插入其间。 导电氧化层的厚度在0.3nm〜2.25nm的范围内。

公开(公告)号：US20130244428A1

公开(公告)日：2013-09-19

申请号：US13884166

申请日：2011-09-09

申请人： Jun-ichi Ohno

发明人： Jun-ichi Ohno

IPC分类号： H01L21/3065

CPC分类号： H01L21/76889 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/3065 ,  H01L23/4827 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method for manufacturing a silicon carbide semiconductor device, a conductive layer is formed on a silicon carbide layer. The silicon carbide layer and the conductive layer react with each other thus forming an alloy layer formed of a reaction layer in contact with the silicon carbide layer and a silicide layer on the reaction layer. A carbon component is removed from the silicide layer. A portion of the silicide layer is removed using an acid thus exposing at least a portion of the reaction layer. An electrode layer is formed on an upper side of the exposed reaction layer.

摘要翻译： 在制造碳化硅半导体器件的方法中，在碳化硅层上形成导电层。 碳化硅层和导电层彼此反应，从而形成由与碳化硅层接触的反应层和反应层上的硅化物层形成的合金层。 从硅化物层去除碳组分。 使用酸去除硅化物层的一部分，从而暴露反应层的至少一部分。 在暴露的反应层的上侧形成电极层。

公开(公告)号：US09005462B2

公开(公告)日：2015-04-14

申请号：US13884166

申请日：2011-09-09

申请人： Jun-ichi Ohno

发明人： Jun-ichi Ohno

IPC分类号： C03C15/00 ,  H01L21/768 ,  H01L21/04 ,  H01L29/45 ,  H01L29/66 ,  H01L29/872 ,  H01L21/3065 ,  H01L23/482 ,  H01L29/16 ,  H01L29/861

CPC分类号： H01L21/76889 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/3065 ,  H01L23/4827 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method for manufacturing a silicon carbide semiconductor device, a conductive layer is formed on a silicon carbide layer. The silicon carbide layer and the conductive layer react with each other thus forming an alloy layer formed of a reaction layer in contact with the silicon carbide layer and a silicide layer on the reaction layer. A carbon component is removed from the silicide layer. A portion of the silicide layer is removed using an acid thus exposing at least a portion of the reaction layer. An electrode layer is formed on an upper side of the exposed reaction layer.

摘要翻译： 在制造碳化硅半导体器件的方法中，在碳化硅层上形成导电层。 碳化硅层和导电层彼此反应，从而形成由与碳化硅层接触的反应层和反应层上的硅化物层形成的合金层。 从硅化物层去除碳组分。 使用酸去除硅化物层的一部分，从而暴露反应层的至少一部分。 在暴露的反应层的上侧形成电极层。

公开(公告)号：US4949160A

公开(公告)日：1990-08-14

申请号：US285021

申请日：1988-12-16

申请人： Jun-ichi Ohno

发明人： Jun-ichi Ohno

IPC分类号： H01L23/50 ,  H01L23/495

CPC分类号： H01L23/49572 ,  H01L23/49541 ,  H01L2224/48091 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/181

摘要： A semiconductor device is provided with a plurality of inner leads substantially radially arranged around a pellet mounting area of a lead frame, an insulating sheet arranged on the pellet mounting area so as to adhesively fix inner lead tip portions, and a semiconductor pellet mounted on the insulating sheet, wherein each tip portion of at least every other inner lead is provided with a broader portion broader than the width of each of the other inner lead tip portions, the broader portion is positioned closer to the central portion of the lead frame than the other inner lead tip portions, and an opening or a thin portion is provided within the broader portion.

公开(公告)号：US4783424A

公开(公告)日：1988-11-08

申请号：US834101

申请日：1986-02-21

申请人： Jun-ichi Ohno ,  Satoshi Konishi

发明人： Jun-ichi Ohno ,  Satoshi Konishi

IPC分类号： G11C17/16 ,  H01L21/82 ,  H01L23/525 ,  H01L21/265

CPC分类号： H01L23/5258 ,  G11C17/16 ,  H01L21/82 ,  H01L23/5254 ,  H01L2924/0002 ,  Y10S148/055 ,  Y10S148/091

摘要： A semiconductor device comprising a first conductor having first and second portions which are electrically disconnected from each other, and a second conductor, formed on an insulating film separating it from the first conductor, which is electrically conductive. A radiated energy beam renders the second conductor non-conductive, while simultaneously electrically connecting the first and second portions, rendering the first conductor conductive, as needed.

摘要翻译： 一种半导体器件，包括具有彼此电断开的第一和第二部分的第一导体，以及形成在与第一导体分离的导电的绝缘膜上的第二导体。 辐射能量束使第二导体不导电，同时电连接第一和第二部分，使得第一导体根据需要导电。

公开(公告)号：US20130306992A1

公开(公告)日：2013-11-21

申请号：US13980998

申请日：2011-09-09

申请人： Jun-ichi Ohno

发明人： Jun-ichi Ohno

IPC分类号： H01L21/768 ,  H01L23/482

CPC分类号： H01L21/76889 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/3065 ,  H01L23/4827 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicon carbide semiconductor device includes: a silicon carbide layer, a reaction layer which is in contact with the silicon carbide layer, a conductive oxidation layer which is in contact with the reaction layer, and an electrode layer which is formed over the reaction layer with the conductive oxidation layer interposed therebetween. A thickness of the conductive oxidation layer falls within a range of 0.3 nm to 2.25 nm.

摘要翻译： 碳化硅半导体器件包括：碳化硅层，与碳化硅层接触的反应层，与反应层接触的导电氧化层，和形成在反应层上的电极层， 导电氧化层插入其间。 导电氧化层的厚度在0.3nm〜2.25nm的范围内。

公开(公告)号：US5528077A

公开(公告)日：1996-06-18

申请号：US399992

申请日：1995-03-06

申请人： Yasuo Tane ,  Jiro Nakano ,  Jun-ichi Ohno

发明人： Yasuo Tane ,  Jiro Nakano ,  Jun-ichi Ohno

IPC分类号： H01L21/60 ,  H01L23/495 ,  H01L23/498 ,  H01L29/41

CPC分类号： H01L23/49572 ,  H01L2924/0002 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16152

摘要： A TAB semiconductor device according to the present invention is as follows. One end of each lead whose direction is fixed by a TAB tape is connected to a corresponding electrode on a semiconductor pellet placed at a predetermined position of the TAB tape. The TAB tape is a tape having the thin leads fixed on a film and a portion where the film is removed, i.e., a window portion in a predetermined area. Only the arrangement of the leads is exposed to the window portion. A user arbitrarily cuts the leads in this area in accordance with mounting. The leads have normal signal leads and wider leads together. As for these wider leads, slits are provided to make the lead widths uniform throughout the window portion.

摘要翻译： 根据本发明的TAB半导体器件如下。 通过TAB带固定方向的每个引线的一端连接到位于TAB带的预定位置的半导体芯片上的对应电极。 TAB带是具有固定在膜上的薄引线和薄膜被去除的部分，即在预定区域中的窗口部分的带子。 只有引线的布置暴露在窗口部分。 用户根据安装任意切断该区域的引线。 引线具有正常的信号引线和较宽的引线。 对于这些较宽的引线，设置狭缝以使整个窗口部分的引线宽度均匀。

公开(公告)号：US4608668A

公开(公告)日：1986-08-26

申请号：US763088

申请日：1985-08-06

申请人： Jun-ichi Ohno ,  Satoshi Konishi

发明人： Jun-ichi Ohno ,  Satoshi Konishi

IPC分类号： G11C17/16 ,  H01L21/82 ,  H01L23/525 ,  G11C11/42

CPC分类号： H01L23/5258 ,  G11C17/16 ,  H01L21/82 ,  H01L23/5254 ,  H01L2924/0002 ,  Y10S148/055 ,  Y10S148/091

摘要： A semiconductor device comprising a first conductor having first and second portions which are electrically disconnected from each other, and a second conductor, formed on an insulating film separating it from the first conductor, which is electrically conductive. A radiated energy beam renders the second conductor non-conductive, while simultaneously electrically connecting the first and second portions, rendering the first conductor conductive, as needed.

摘要翻译： 一种半导体器件，包括具有彼此电断开的第一和第二部分的第一导体，以及形成在与第一导体分离的导电的绝缘膜上的第二导体。 辐射能量束使第二导体不导电，同时电连接第一和第二部分，使得第一导体根据需要导电。