Abstract:
A ridge-type semiconductor laser is provided. The ridge-type semiconductor laser includes a pattern for a current inflow path control formed on an active layer and having an opening thereinside controlling a current inflow path with a width W1, and a ridge formed on the pattern for a current inflow path control, with a width W2 greater than W1 and burying the opening with a width W1 and controlling an optical mode. The ridge-type semiconductor laser improves the characteristics of a laser by separately controlling the extent that current is spread in the space, and the extent that optical mode is spread in the space, to maximize the coincidence of the respective space distributions of the current and the optical mode.
Abstract:
Disclosed is a transmitter optical module which includes a first package generating an optical signal; a second package bonded with the first package by using chip-to-chip bonding, having a silicon optical circuit platform structure, and amplifying the optical signal; and an optical waveguide forming a transmission path of the optical signal from the first package to the second package.
Abstract:
Disclosed is a transmitter optical module which includes an electro-absorption modulated laser modulating a light into an optical signal through a high-frequency electrical signal; a first sub-mount transferring the high-frequency signal to the electro-absorption modulated laser; and a second sub-mount receiving the high-frequency signal from the electro-absorption modulated laser to terminate the electro-absorption modulated laser. A length of a first wire connecting the first sub-mount and the electro-absorption modulated laser is different from a length of a second wire connecting the second sub-mount and the electro-absorption modulated laser.
Abstract:
Provided is an optical module. The optical module includes: an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth; a lens in the first trench of the optical bench; at least one semiconductor chip in the second trench of the optical bench; and a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches, wherein the optical bench is a metal optical bench or a silicon optical bench.
Abstract:
Provided are an optical switch device having a simple light path and capable of achieving high speed switching, and a method of manufacturing the optical switch device. The optical switch device comprises one or more first optical waveguides extending in a first direction, one or more second optical waveguides connected to the first optical waveguides in a second direction crossing the first direction, and one or more switching parts configured to control light transmitted in the first direction within the first optical waveguide connected with the second waveguide, to selectively reflect the light to the second waveguide extending in the second direction.
Abstract:
Provided is an upstream source light generator of a passive optical network (PON) system. The upstream source light generator includes an amplification part configured to amplify injection light, and a reflection part configured to receive the amplified injection light and generate reflection light by reflecting the amplified injection light with different optical delays according to wavelengths of the amplified injection light.
Abstract:
Provided is a multichannel transmitter optical module which includes a plurality of light source units configured to generate light, a plurality of an electro-absorption modulators (EAMs) configured to modulate the generated light to an optical signal through a radio frequency (RF) signal, a plurality of RF transmission lines configured to apply the RF signal to the EAMs, and a combiner configured to combine the modulated optical signal. The RF transmission lines are connected to the EAMs in a traveling wave (TW) electrode manner. The multichannel transmitter optical module has alleviated crosstalk and is compactly integrated to have a small size.
Abstract:
Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.
Abstract:
Provided are a distributed feedback laser diode and a manufacturing method thereof. The distributed feedback laser diode includes a first area having a first grating layer disposed in a longitudinal direction, a second area disposed adjacent to the first area and having a second grating layer disposed in the longitudinal direction, and an active layer disposed over the first and second areas. Coupling coefficients of the first and second grating layers are made different in the first and second areas by a selective area growth method. The distributed feedback laser diode includes grating layers each having an asymmetric coefficient and is implemented within an optimal range capable of obtaining both a high front facet output and stable single mode characteristics. Thus, high manufacturing yield and low manufacturing cost can be achieved.
Abstract:
Provided is an optical comb generator including a light source, a first waveguide region, a modulation region, and a second waveguide region. The light source is configured to output single-mode light. The first waveguide region divides an output of the light source into first light and second light. The modulation region includes a first modulator and a second modulator modulating the first light and the second light respectively. The second waveguide region combines outputs of the first modulator and the second modulator to output an optical comb. Here, the first modulator and the second modulator respectively include a first quantum well and a second quantum well having an asymmetric structure with respect to each other. The light source, the first waveguide region, the modulation region, and the second waveguide region are integrated into one substrate.