公开(公告)号：US20060018352A1

公开(公告)日：2006-01-26

申请号：US11008064

申请日：2004-12-08

Applicant: Jung Song ,  Kisoo Kim ,  Yongsoon Baek

Inventor： Jung Song ,  Kisoo Kim ,  Yongsoon Baek

IPC: H01S5/00

CPC classification number: H01S5/22 ,  H01S5/323

Abstract: A ridge-type semiconductor laser is provided. The ridge-type semiconductor laser includes a pattern for a current inflow path control formed on an active layer and having an opening thereinside controlling a current inflow path with a width W1, and a ridge formed on the pattern for a current inflow path control, with a width W2 greater than W1 and burying the opening with a width W1 and controlling an optical mode. The ridge-type semiconductor laser improves the characteristics of a laser by separately controlling the extent that current is spread in the space, and the extent that optical mode is spread in the space, to maximize the coincidence of the respective space distributions of the current and the optical mode.

Abstract translation: 提供脊型半导体激光器。 脊型半导体激光器包括形成在有源层上的电流流入路径控制的图形，并且具有用于控制具有宽度W 1的电流流入路径的开口，以及形成在用于电流流入路径控制的图案上的脊， 其宽度W 2大于W 1并且将宽度W 1的开口埋入并控制光学模式。 脊型半导体激光器通过分别控制电流在空间中扩展的程度以及光学模式在空间中扩展的程度来改善激光器的特性，以使电流的各个空间分布的一致性最大化 光学模式。

公开(公告)号：US08710547B2

公开(公告)日：2014-04-29

申请号：US13605135

申请日：2012-09-06

Applicant: Jae-Sik Sim ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Jae-Sik Sim ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L29/72

CPC classification number: H01L31/107

Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

Abstract translation: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板，形成在基板上的光吸收层，形成在光吸收层上的包覆层，形成在包层中的有源区，形成在有源区周围的保护环区，绝缘 形成在保护环区域和有源区域之间的区域。

公开(公告)号：US20130153962A1

公开(公告)日：2013-06-20

申请号：US13605135

申请日：2012-09-06

Applicant: Jae-Sik SIM ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Jae-Sik SIM ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/107 ,  H01L31/18

CPC classification number: H01L31/107

Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

Abstract translation: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板，形成在基板上的光吸收层，形成在光吸收层上的包覆层，形成在包层中的有源区，形成在有源区周围的保护环区，绝缘 形成在保护环区域和有源区域之间的区域。

公开(公告)号：US20100316383A1

公开(公告)日：2010-12-16

申请号：US12582211

申请日：2009-10-20

Applicant: Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

Inventor： Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

IPC: H04J14/02

CPC classification number: H04J14/0282

Abstract: Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.

Abstract translation: 提供了一种波分复用无源光网络（WDM-PON）装置。 WDM-PON包括光源单元，光复用器和啁啾布拉格光栅。 光源单元产生光信号。 光复用器通过光复用器的一端从光源单元接收光信号，复用光信号，并输出复用的光信号。 啁啾布拉格光栅连接到光复用器的另一端。 啁啾布拉格光栅再次反射已经通过光复用器的光信号，以将光信号的某一部分重新输入光复用器和光源单元。 光复用器对重新输入的光信号执行频谱分片，并使用光复用器的信道波长作为主振荡波长来操作光源单元。

公开(公告)号：US20100081225A1

公开(公告)日：2010-04-01

申请号：US12517357

申请日：2007-10-16

Applicant: Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

Inventor： Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

IPC: H01L33/30 ,  B05C11/00 ,  H01L21/20

CPC classification number: H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639

Abstract: Provided is a mask pattern for selective area growth of a semiconductor layer and a selective area growth method for a semiconductor layer for independently controlling a growth rate and a strain of the semiconductor layer. The selective area growth method includes: forming a plurality of pairs of first mask patterns, the first mask patterns in each pair including a first open area therebetween, the first open area having a width that is wider than a distance causing overgrowth of the semiconductor layer, the pairs of the first mask patterns repeatedly arranged with a period P therebetween; wherein controlling a growth rate and a strain of the semiconductor layer formed on the first open area by adjusting the period P.

Abstract translation: 提供了用于半导体层的选择性区域生长的掩模图案和用于独立地控制半导体层的生长速率和应变的半导体层的选择区域生长方法。 选择区域生长方法包括：形成多对第一掩模图案，每对中的第一掩模图案包括其间的第一开口区域，第一开口区域的宽度比导致半导体层过度生长的距离宽 ，所述第一掩模图案对以其间的周期P重复布置; 其中通过调整周期P来控制形成在第一开放区域上的半导体层的生长速率和应变。

公开(公告)号：US08742316B2

公开(公告)日：2014-06-03

申请号：US12942338

申请日：2010-11-09

Applicant: Kisoo Kim ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

Inventor： Kisoo Kim ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

IPC: G01J1/44

CPC classification number: G01J1/46

Abstract: Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

Abstract translation: 提供了一种光电检测器。 光电检测器包括：雪崩光电二极管; 将偏置电压提供给雪崩光电二极管的一端的偏置电路; 连接到雪崩光电二极管的另一端并检测在雪崩光电二极管中出现的光电流的检测电路; 以及耦合电容器，其连接到雪崩光电二极管的一端或另一端并提供耦合电压以以盖革模式驱动雪崩光电二极管。

公开(公告)号：US20120281274A1

公开(公告)日：2012-11-08

申请号：US13307067

申请日：2011-11-30

Applicant: Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

Inventor： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC: H01S5/20 ,  H01L21/04

CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US08149503B2

公开(公告)日：2012-04-03

申请号：US12367431

申请日：2009-02-06

Applicant: Hyun Soo Kim ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

Inventor： Hyun Soo Kim ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

IPC: H01S3/131 ,  H04J14/02 ,  H04B10/17

CPC classification number: H01S5/50 ,  H01S5/026 ,  H01S5/0608 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/509

Abstract: Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.

Abstract translation: 提供了一种半导体光放大器和使用其的光信号处理方法。 反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。 向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。

公开(公告)号：US09170333B2

公开(公告)日：2015-10-27

申请号：US13334111

申请日：2011-12-22

Applicant: Bongki Mheen ,  Ki-Jun Sung ,  Jae-Sik Sim ,  Kisoo Kim ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Bongki Mheen ,  Ki-Jun Sung ,  Jae-Sik Sim ,  Kisoo Kim ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H04N13/02 ,  G01S17/89 ,  G01S7/481 ,  G01S7/486 ,  G01S7/487 ,  G01S7/491 ,  H04N13/00

CPC classification number: G01S17/89 ,  G01S7/4813 ,  G01S7/4816 ,  G01S7/4863 ,  G01S7/4868 ,  G01S7/487 ,  G01S7/4912 ,  H04N13/106 ,  H04N13/211 ,  H04N13/254 ,  H04N13/296

Abstract: Disclosed is a system of a dynamic range three-dimensional image, including: an optical detector including a gain control terminal capable of controlling an optical amplification gain; a pixel detecting module for detecting a pixel signal for configuring an image by receiving an output of the optical detector; a high dynamic range (HDR) generating module for acquiring a dynamic range image by generating a signal indicating a saturation degree of the pixel signal and combining the pixel signal based on the pixel signal detected by the pixel detecting module; and a gain control signal generating module generating an output signal for supplying required voltage to the gain control terminal of the optical detector based on the magnitude of the signal indicating the saturation degree of the pixel signal.

Abstract translation: 公开了一种动态范围三维图像的系统，包括：光检测器，其包括能够控制光放大增益的增益控制端; 像素检测模块，用于通过接收光学检测器的输出来检测用于配置图像的像素信号; 高动态范围（HDR）生成模块，用于通过产生指示像素信号的饱和度的信号来获取动态范围图像，并且基于由像素检测模块检测的像素信号组合像素信号; 以及增益控制信号生成模块，其基于表示像素信号的饱和度的信号的大小，生成用于向光检测器的增益控制端子提供所需电压的输出信号。

公开(公告)号：US08989229B2

公开(公告)日：2015-03-24

申请号：US13486698

申请日：2012-06-01

Applicant: Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-seok Choi ,  Jongbae Kim

Inventor： Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-seok Choi ,  Jongbae Kim

IPC: H01S5/22 ,  H01S5/026 ,  H01S5/14 ,  H01L33/20 ,  H01S5/022 ,  H01S5/062 ,  H01S5/10 ,  H01S5/223 ,  H01S5/343 ,  H01L33/00 ,  G02B6/30 ,  G02B6/42

CPC classification number: H01L33/005 ,  B82Y20/00 ,  G02B6/305 ,  G02B6/4206 ,  H01L33/0045 ,  H01L33/20 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/06226 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/2213 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/34306 ,  H01S2301/176

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Abstract translation: 提供了一种高速超发光二极管，其制造方法，以及包括该发光二极管的波长可调谐外腔激光器。 超发光二极管包括具有有源区和光模尺寸转换区的衬底，在有源区中包括脊波导的波导和连接到有源波导的光模尺寸转换区中的深脊波导， 脊波导; 设置在脊波导的侧面上的平坦化层和基板上的深脊波导，以及与该电极电连接的焊盘，该焊盘设置在有源波导的外侧的平坦化层上。