摘要:
This disclosure is directed to widen an adjustable range of the spectral linewidth of laser light output from a laser apparatus. This laser apparatus may include: (1) an excitation source configured to excite a laser medium in a laser gain space, (2) an optical resonator including an output coupler arranged on one side of an optical path through the laser gain space and a wavelength dispersion element arranged on the other side of the optical path through the laser gain space, and (3) a switching mechanism configured to switch a beam-width magnification or reduction factor by placing or removing at least one beam-width change optical system for expanding or reducing a beam width in or from an optical path between the laser gain space and the wavelength dispersion element or by inverting orientation of the at least one beam-width change optical system in the optical path.
摘要:
A master oscillator system may include a grating that functions as one of a plurality of resonator mirrors in an optical resonator, an optical element disposed within an optical path between the plurality of resonator mirrors, and an attitude control mechanism that adjusts an angle at which laser light traveling within the optical resonator is incident on the grating by adjusting the attitude of the optical element.
摘要:
An extreme ultraviolet (EUV) light source system in which parts of an EUV light source apparatus can easily be replaced. The system includes: (i) an extreme ultraviolet light source apparatus having a chamber in which extreme ultraviolet light is generated, a target supply unit for supplying a target material into the chamber, a driver laser for irradiating the target material supplied by the target supply unit with a laser beam to generate plasma, and a collector mirror for collecting the extreme ultraviolet light radiated from the plasma to allow the extreme ultraviolet light to enter projection optics of exposure equipment; and (ii) a lifting apparatus provided to lift and move a replacement part which is a part of the extreme ultraviolet light source apparatus.
摘要:
A method for generating extreme ultraviolet (EUV) light that includes the steps of supplying a droplet of a target material into a chamber, diffusing the droplet by irradiating the droplet by a pre-pulse laser beam to form a diffused target, and generating a plasma by irradiating the diffused target by a main pulse laser beam wherein the plasma emits extreme ultraviolet light. The main pulse laser beam has a cross-sectional shape that is substantially coincident with a shape of the diffused target at the irradiation point.
摘要:
An apparatus for physically cleaning a nozzle inside a chamber may include a cleaning member disposed inside the chamber. The nozzle is configured to output a target material into the chamber in which extreme ultraviolet light is generated. The cleaning member is configured to remove the target material deposited around the nozzle.
摘要:
An excimer laser apparatus is provided with a compact high efficiency dust particle removal means which is capable of maintaining the windows clean with only a small volume of purging gas, and which prevents deterioration of aperture masks without having to increase the cavity length or risking the possibility of leakage from piping connections. The excimer laser apparatus uses, as dust particle removal means, filters (13a and 13b) made of metal or ceramic which is non-reactive with fluorine. A ground potential dust collector can be provided at a downstream side of a static dust particle remover, having an anode and a cathode, for collecting any dust particles which have passed through the static dust particle remover. In addition, clean laser medium gas can be introduced into subchambers (14a and 14b) through gas introducing passages (11a and 11b) provided in the walls of the housing (1) and then into the laser chamber (12) through labyrinths (8a and 8b) without disturbing the clean gas which stays near the internal surfaces of the windows (6a and 6b).
摘要:
A chamber apparatus for operating with a laser apparatus includes a chamber, a target supply unit, a collection unit and a collection container. The chamber includes an inlet through which a laser beam from the laser apparatus enters the chamber. The target supply unit is configured to supply a target material to a predetermined region inside the chamber. The collection unit includes a debris entering surface so that debris generated when the target material is irradiated with the laser beam enters the debris entering surface. The debris entering surface is inclined with respect to a direction in which the debris enters the debris entering surface. The collection container collects the debris flowing out of the collection unit.
摘要:
Provided is a laser device which is installed within a predetermined space and on a predetermined floor area, the laser device may includes: a master oscillator; at least one amplifier unit that amplifies a laser beam outputted from the master oscillator; at least one power source unit that supplies excitation energy to the at least one amplifier unit; and a movement mechanism which enables at least one among the at least one amplifier unit and the at least one power source unit to be moved in a direction parallel with a floor surface.
摘要:
A film is formed on the discharge parts of the main discharge electrodes. In order to prevent erosion of the discharge parts by the halogen gas contained in the laser gas, a substance that tends not to react with the halogen gas, i.e., a halogen-resistant substance, is used for this film. Furthermore, in order to prevent deformation of the discharge parts by the bombardment and heat of the main discharge, a substance that has a higher hardness than the metal of the main discharge electrodes or a substance that has a higher melting point than the metal of the main discharge electrodes is used for this film. As a result, deterioration of the electrodes can be inhibited, so that a stable laser output can be obtained, and the replacement interval of the electrodes can be extended.
摘要:
Specification of an etalon included in a multimode, narrow-band oscillation excimer laster used as a light source for light exposure in photolithography are set to satisfy a relation S.lambda.W.lambda.R.lambda. (u,v)d.lambda..gtoreq..alpha., where .alpha. is an optical transfer function necessary for light exposure of resist according to a reticle pattern, R.lambda.(u,v) is an optical transfer function of monochromatic light for an illuminating system and a reduced-projection lens, W.lambda. is a weight which is applied to a waveform of a power spectrum in an oscillation laser beam at a wavelength .lambda.. Further, an inclination angle .lambda. of the etalon in its normal direction with respect to an optical axis when the etalon is provided between the chamber and rear mirror is set to satisfy a relation .theta.>tan.sup.-1 S/2A, where S is a dimension of a beam at a beam output mirror and A is a distance between the etalon and beam output mirror, and an oscillation linewidth K is set to satisfy relations K=1/.lambda..sub.o [1/{cos (.theta.+.theta.')}-1/cos .theta.} and also K.ltoreq.x, where .lambda..sub.o is a selected wavelength when the beam is directed onto the etalon at a normal angle, .theta.' is a beam divergence angle, and x is an allowable linewidth of a light exposure system using the excimer laser as a light source.