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1.发明申请公开(公告)号：US20190386161A1
公开(公告)日：2019-12-19
申请号：US16556345
申请日：2019-08-30
IPC分类号： H01L31/0224
摘要： According to one embodiment, a solar cell includes a first electrode, a second electrode, a photoelectric conversion layer, and a plurality of insulants. The photoelectric conversion layer is provided between the first electrode and the second electrode. The plurality of insulants is disposed on a face of the first electrode. The face faces the second electrode. Any adjacent two of the plurality of insulants are disposed with a void interposed between the adjacent two.
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公开(公告)号：US20240309523A1
公开(公告)日：2024-09-19
申请号：US18419283
申请日：2024-01-22
发明人： Norihiro YOSHINAGA , Mutsuki YAMAZAKI , Keisuke SHIINO , Taishi FUKAZAWA , Yoshihiko NAKANO , Koji MIZUGUCHI , Yoshitsune SUGANO , Masahiko YOSHIKI , Asato KONDO , Mitsuhiro OKI
IPC分类号： C25B11/053 , C25B9/23 , C25B9/77 , C25B11/031 , C25B11/056 , C25B11/063 , C25B11/093
CPC分类号： C25B11/053 , C25B9/23 , C25B9/77 , C25B11/031 , C25B11/056 , C25B11/063 , C25B11/093
摘要： An electrode of an embodiment includes a porous titanium support and a catalyst layer for electrolysis provided on the porous titanium support and stacked sheet layers and gap layers alternately. A first covering layer including titanium oxide is provided on the porous titanium support on the catalyst layer side. A second covering layer including titanium oxide is provided on the porous titanium support on an opposite side of the catalyst layer. An average thickness of the first covering layer is denoted as D1. An average thickness of the second covering layer is denoted as D2. D1 and D2 satisfies 1 [nm]≤D2−D1≤20 [nm].
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公开(公告)号：US20210013360A1
公开(公告)日：2021-01-14
申请号：US17015490
申请日：2020-09-09
发明人： Soichiro SHIBASAKI , Yuya HONISHI , Mutsuki YAMAZAKI , Naoyuki NAKAGAWA , Sara YOSHIO , Yoshiko HIRAOKA , Kazushige YAMAMOTO
IPC分类号： H01L31/18 , H01L31/076 , H01L31/046
摘要： A method for manufacturing a stacked thin film, includes forming a photoelectric conversion layer on a first transparent electrode by sputtering using a target mainly composed of copper in an oxygen containing atmosphere. An oxygen partial pressure of the sputtering is in a range of 0.01 [Pa] or more and 4.8 [Pa] or less, and 0.24×d [Pa] or more and 2.4×d [Pa] or less when a deposition rate is d [μm/min], in formation of the photoelectric conversion layer. A sputtering temperature is 300° C. or more and 600° C. or less, in formation of the photoelectric conversion layer.
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4.发明申请公开(公告)号：US20200006589A1
公开(公告)日：2020-01-02
申请号：US16567684
申请日：2019-09-11
IPC分类号： H01L31/0725 , H01L31/0224 , H01L31/0216 , H01L31/075 , H01L31/032
摘要： A solar cell of an embodiment includes: a substrate; an n-electrode; an n-type layer; a p-type light absorption layer which is a semiconductor of a Cu-based oxide; and a p-electrode. The n-electrode is disposed between the substrate and the n-type layer. The n-type layer is disposed between the n-electrode and the p-type light absorption layer. The p-type light absorption layer is disposed between the n-type layer and the p-electrode. The n-type layer is disposed closer to a light incident side than the p-type light absorption layer. The substrate is a single substrate included in the solar cell.
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公开(公告)号：US20160087125A1
公开(公告)日：2016-03-24
申请号：US14857361
申请日：2015-09-17
发明人： Hiroki HIRAGA , Soichiro SHIBASAKI , Naoyuki NAKAGAWA , Mutsuki YAMAZAKI , Kazushige YAMAMOTO , Shinya SAKURADA , Michihiko INABA
IPC分类号： H01L31/0224
CPC分类号： H01L31/02168 , H01L31/02167 , H01L31/022425 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/0749 , Y02E10/50 , Y02E10/541
摘要： A photoelectric conversion device of an embodiment has a substrate, a bottom electrode on the substrate, a light absorbing layer on the bottom electrode, an n-type layer on the light absorbing layer, a transparent electrode on the n-type layer, and an oxide layer on the transparent electrode. nA and nB satisfy the relation 100/110≦nB/nA≦110/100. nA is the refractive index of the transparent electrode. nB is the refractive index of the oxide layer.
摘要翻译： 实施方式的光电转换装置具有基板，基板上的底电极，底电极上的光吸收层，光吸收层上的n型层，n型层上的透明电极，以及 氧化层在透明电极上。 nA和nB满足关系100/110＆nlE; nB / nA＆nlE; 110/100。 nA为透明电极的折射率。 nB是氧化物层的折射率。
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公开(公告)号：US20150087522A1
公开(公告)日：2015-03-26
申请号：US14483667
申请日：2014-09-11
CPC分类号： H01Q1/364 , H01Q1/38 , H01Q1/42 , H01Q21/0006 , H01Q21/061 , H01Q21/30
摘要： A superconducting antenna device of an embodiment includes an array antenna made by stacking a flat antenna having one or more antennas made of a superconducting material and a ground pattern on a low-loss dielectric substrate from a short wave band to an extremely-high frequency band, a vacuum chamber configured to accommodate the array antenna, a refrigerator configured to cool the array antenna, and a vacuum insulating window configured to pass an electromagnetic wave from a short wave band to an extremely-high frequency band in a direction of directivity of the array antenna in the vacuum chamber.
摘要翻译： 一个实施例的超导天线装置包括阵列天线，其通过将具有由超导材料制成的一个或多个天线的平坦天线和低损耗介质基底上的接地图案从短波段堆叠到极高频带 配置为容纳阵列天线的真空室，构造成冷却阵列天线的冰箱和真空绝缘窗，该真空绝热窗构造成将电磁波从短波段传递到极高频带，方向性方向为 阵列天线在真空室中。
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公开(公告)号：US20150083186A1
公开(公告)日：2015-03-26
申请号：US14478252
申请日：2014-09-05
发明人： Soichiro SHIBASAKI , Kazushige YAMAMOTO , Hiroki HIRAGA , Naoyuki NAKAGAWA , Mutsuki YAMAZAKI , Shinya SAKURADA , Michihiko INABA , Hitomi SAITO
IPC分类号： H01L31/0725
CPC分类号： H01L31/0725 , H01L31/043 , H01L31/0682 , Y02E10/547
摘要： A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.
摘要翻译： 实施例的多结太阳能电池包括：第一太阳能电池，其包括第一光电转换装置，包括串联连接并具有背接触的多个第二光电转换装置的第二太阳能电池以及第一太阳能电池之间的绝缘层 电池和第二太阳能电池。 在串联连接的第二光电转换装置之间设置器件隔离区。
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公开(公告)号：US20200091361A1
公开(公告)日：2020-03-19
申请号：US16691791
申请日：2019-11-22
发明人： Soichiro SHIBASAKI , Hiroki HIRAGA , Hitomi SAITO , Naoyuki NAKAGAWA , Mutsuki YAMAZAKI , Kazushige YAMAMOTO
IPC分类号： H01L31/043 , H01L31/05 , H01L25/04 , H01L31/0725 , H01L31/0224
摘要： According to one embodiment, a multi-junction solar cell includes a first solar cell, a second solar cell, and an insulating layer. The first solar cell includes a first photoelectric conversion element. The second solar cell is connected in parallel with the first solar cell. The second solar cell includes multiple second photoelectric conversion elements connected in series. The insulating layer is provided between the first solar cell and the second solar cell. The second photoelectric conversion element includes a p-electrode and an n-electrode. The p-electrode is connected to a p+-region including a surface on a side opposite to a light incident surface. The n-electrode is connected to an n+-region including the surface on the side opposite to the light incident surface. The p-electrodes oppose each other or the n-electrodes oppose each other in a region where the multiple second photoelectric conversion elements are adjacent to each other.
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公开(公告)号：US20170271541A1
公开(公告)日：2017-09-21
申请号：US15257042
申请日：2016-09-06
发明人： Miyuki SHIOKAWA , Naoyuki NAKAGAWA , Hiroki HIRAGA , Soichiro SHIBASAKI , Sara YOSHIO , Mutsuki YAMAZAKI , Kazushige YAMAMOTO
IPC分类号： H01L31/0749 , H01L31/032 , H01L31/068
CPC分类号： H01L31/0749 , H01L31/0322 , H01L31/046 , H01L31/068 , H01L31/0687 , H01L31/0725 , Y02E10/541 , Y02E10/547
摘要： A photoelectric conversion element of an embodiment includes a first electrode, a second electrode, and a light absorbing layer, containing a chalcopyrite-type compound containing at least a group-Ib element, a group-IIIb element, and a group-VIb element, between the first electrode and the second electrode. The group-VIb element includes at least sulfur. An average sulfur atom concentration S1 in a side surface region of the light absorbing layer is higher than an average sulfur atom concentration S2 in an inside region of the light absorbing layer.
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公开(公告)号：US20150087107A1
公开(公告)日：2015-03-26
申请号：US14478219
申请日：2014-09-05
发明人： Hiroki HIRAGA , Naoyuki NAKAGAWA , Soichiro SHIBASAKI , Mutsuki YAMAZAKI , Kazushige YAMAMOTO , Shinya SAKURADA , Michihiko INABA
IPC分类号： H01L31/20 , H01L31/032
CPC分类号： H01L31/20 , H01L21/02491 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L31/0322 , H01L31/0326 , H01L31/068 , Y02E10/541 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a photoelectric conversion device of an embodiment includes forming, on a first electrode, a photoelectric conversion layer comprising at least one of a chalcopyrite compound, a stannite compound, and a kesterite compound. The forming of the photoelectric conversion layer includes forming a photoelectric conversion layer precursor comprising at least one compound semiconductor of a chalcopyrite compound, a stannite compound, and a kesterite compound on the first electrode. The forming of the photoelectric conversion layer includes immersing the precursor in a liquid including at least one of Group IIa and Group IIb elements at 0° C. to 60° C., after forming of the photoelectric conversion layer precursor. The compound semiconductor on a side of the first electrode is at least either amorphous or larger in average crystal grain size than the compound semiconductor on an opposite side of the first electrode.
摘要翻译： 一种实施方式的光电转换装置的制造方法包括在第一电极上形成包含黄铜矿化合物，锡酸锌化合物和钾盐化合物中的至少一种的光电转换层。 光电转换层的形成包括在第一电极上形成包含至少一种黄铜矿化合物的化合物半导体，硅酸盐化合物和壳聚糖化合物的光电转换层前体。 光电转换层的形成包括在形成光电转换层前体之后，在0℃至60℃下将前体浸入包括IIa族和IIb族组分中的至少一种的液体中。 第一电极侧的化合物半导体与第一电极的相反侧的化合物半导体的平均晶粒尺寸中的至少一个以上为非晶质或更大。
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