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公开(公告)号：US20120309131A1
公开(公告)日：2012-12-06
申请号：US13572512
申请日：2012-08-10
申请人： KOJI BANDO , KAZUYUKI MISUMI , TATSUHIKO AKIYAMA , NAOKI IZUMI , AKIRA YAMAZAKI
发明人： KOJI BANDO , KAZUYUKI MISUMI , TATSUHIKO AKIYAMA , NAOKI IZUMI , AKIRA YAMAZAKI
IPC分类号： H01L21/56
CPC分类号： H01L23/49503 , G11C11/16 , H01L23/552 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L27/228 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/48257 , H01L2224/4826 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01042 , H01L2924/01046 , H01L2924/01061 , H01L2924/01064 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2924/3512 , H01L2224/05599 , H01L2924/00012
摘要： To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device.A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.
摘要翻译： 提供一种通过提高包括MRAM器件的半导体器件中的外部磁场的电阻来提高MRAM器件的数据保持特性的技术。 第一磁屏蔽材料经由第一管芯附着膜设置在管芯焊盘上。 然后，半导体芯片通过第二芯片附着膜安装在第一磁屏蔽材料上。 此外，第二磁屏蔽材料通过第三芯片附着膜设置在半导体芯片的上方。 也就是说，半导体芯片被布置成被第一磁屏蔽材料和第二磁屏蔽材料夹在中间。 此时，当第二磁屏蔽材料的平面区域小于第一磁屏蔽材料的平面区域时，第二磁屏蔽材料的厚度比第一磁屏蔽材料的厚度厚。
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公开(公告)号：US20100203681A1
公开(公告)日：2010-08-12
申请号：US12633830
申请日：2009-12-09
CPC分类号： H01L24/85 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/7825 , H01L2224/78301 , H01L2224/7865 , H01L2224/78703 , H01L2224/85181 , H01L2224/85447 , H01L2224/97 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20752 , Y10S228/904 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An improvement in the quality of wire bonding is achieved by reducing the vibration of a lead frame or a wiring substrate after wire bonding. Over a heat block in a wire bond portion of a wire bonder, there is provided a cooling blower for cooling a wire-bonded matrix frame so that the temperature thereof may decrease stepwise. After wire bonding, cold air is blown from the cooling blower to the matrix frame, and temperature control of the matrix frame is performed so that the temperature of the matrix frame after wire bonding may decrease stepwise. Or, the wire-bonded matrix frame is fixed with a holding tool such as a frame holding member, a guide member, a roller means, or an elastic means until cooling is completed.
摘要翻译： 通过在引线接合之后减少引线框架或布线基板的振动来实现引线接合质量的提高。 在引线接合器的引线接合部分的热块上，设置有用于冷却引线键合矩阵框架的冷却鼓风机，使得其温度可以逐步降低。 引线接合后，从冷却鼓风机向矩阵框架吹出冷空气，进行矩阵框架的温度控制，使得引线接合后的矩阵框架的温度可以逐步降低。 或者，通过诸如框架保持构件，引导构件，滚子装置或弹性装置之类的保持工具将引线键合框架固定，直到冷却完成。
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