摘要:
According to one embodiment, a memory system comprises a non-volatile semiconductor memory, a memory and a controller. The memory stores a management table including a plurality of parameters for managing the non-volatile semiconductor memory. The controller is configured to control the operation of the non-volatile semiconductor memory based on a first value of the parameters contained in the management table. The controller obtains a second value corresponding to the parameters from an operation log of the non-volatile semiconductor memory, compares the second value of the parameters with the first value, calculates the difference between the second value of the parameters and the first value when they are different from each other, calculates a correction value for correcting the first value when the difference is greater than a third value, and updates the first value of the management table based on the correction value.
摘要:
According to one embodiment, there is provided a method for forming a pattern including forming an island-like metal underlayer comprised of a first metal, a phase-separated release layer including a first metal, a second metal, and a metal oxide, a mask layer, and a resist layer on a processed layer in this order, forming a concave-convex pattern on the resist layer, transferring the pattern to the mask layer, the phase-separated release layer, and the processed layer in this order, dissolving the phase-separated release layer using a peeling liquid for dissolving the first metal and the second metal, and removing the mask layer from the processed layer to expose the concave-convex pattern.
摘要:
According to one embodiment, there is provided a method for forming a pattern including forming an island-like metal underlayer comprised of a first metal, a phase-separated release layer including a first metal, a second metal, and a metal oxide, a mask layer, and a resist layer on a processed layer in this order, forming a concave-convex pattern on the resist layer, transferring the pattern to the mask layer, the phase-separated release layer, and the processed layer in this order, dissolving the phase-separated release layer using a peeling liquid for dissolving the first metal and the second metal, and removing the mask layer from the processed layer to expose the concave-convex pattern.
摘要:
According to one embodiment, a magnetic recording medium including a substrate and a magnetic recording layer formed on the substrate and including a plurality of projections is obtained. The array of the plurality of projections includes a plurality of domains in which the projections are regularly arranged, and a boundary region between the domains, in which the projections are irregularly arranged. The boundary region is formed along a perpendicular bisector of a line connecting the barycenters of adjacent projections.
摘要:
According to one embodiment, there is provided a pattern formation method including coating a substrate or mask layer with a fine particle coating solution containing fine particles including a protective group having a close surface polarity and containing, on at least surfaces thereof, a material selected from the group consisting of Al, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Sn, Mo, Ta, W, and oxides thereof, a viscosity modifier, and a solvent for adjusting mixing of the viscosity modifier and the fine particles having the protective group, thereby forming a fine particle layer on the substrate or mask layer.
摘要:
According to one embodiment, there is provided a magnetic recording medium which includes a base, a magnetic recording layer having convex-shaped magnetic layers, which is formed on the base, and a protective film formed on the magnetic recording layer. There are gaps in a region surrounded by the protective film, the surface of the base, and each side wall of each magnetic layer.
摘要:
According to one embodiment, a memory device includes a controller, and a nonvolatile memory controlled by the controller, the nonvolatile memory executing an erase operation by an algorithm which repeats loops, each loop including an erase step applying an erase pulse to a memory cell and a verify step verifying a threshold voltage of the memory cell after the erase step, an erase-verify-read voltage using the verify step changing in a x-th loop (x is a natural number equal to or larger than 2). The controller is capable of changing a value of x, and indicates the value of x to the nonvolatile memory.
摘要:
According to one embodiment, a pattern formation method includes steps of forming a layer to be processed on a substrate, forming a metal microparticle layer by coating the layer to be processed with a metal microparticle coating solution containing metal microparticles and a solvent, reducing a protective group amount around the metal microparticles by first etching, forming a protective layer by exposing the substrate to a gas containing C and F and adsorbing the gas around the metal microparticles to obtain a projection pattern, and transferring the projection pattern to the layer to be processed by second etching.
摘要:
According to one embodiment, a memory system comprises a first nonvolatile semiconductor memory, a temperature sensor and a controller. The first nonvolatile semiconductor memory includes the first and second semiconductor chips. The temperature sensor detects a temperature of the first nonvolatile semiconductor memory. The controller acquires the wear level per block of the first and second semiconductor chips based on the temperature of the first nonvolatile semiconductor memory and the frequency of use of the first nonvolatile semiconductor memory, and sets, based on the wear level, an examination frequency for defining a cycle of examination of quality of data per block of the first and second semiconductor chips.
摘要:
According to one embodiment, a perpendicular magnetic recording medium includes a substrate, an underlayer formed on the substrate and a magnetic recording layer formed on the underlayer and having an easy axis in a direction perpendicular to a film surface. The underlayer includes a plurality of projecting portions arranged at a distance of 1 nm to 20 nm from one another. The magnetic recording layer is an amorphous magnetic recording layer including a plurality of magnetic grains each formed to expand towards a top end thereof from a surface of a respective projecting portion of the underlayer, at least those of the magnetic grains located on a respective projecting portion side being separated from each other.