公开(公告)号：US20150325428A1

公开(公告)日：2015-11-12

申请号：US14805141

申请日：2015-07-21

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kei KANEKO ,  Mitsuhiro Kushibe ,  Hiroshi Katsuno ,  Shinji Yamada ,  Jumpei Tajima ,  Yasuo Ohba

IPC分类号： H01L21/02 ,  H01L33/00

CPC分类号： H01L33/12 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/154 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/36 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.

摘要翻译： 氮化物半导体晶片包括硅衬底，第一层，第二层，第三层，第四层，第五层和第六层。 第一层设置在硅衬底上。 第二层设置在第一层上。 第三层设置在第二层上。 第四层设置在第三层上。 第五层设置在第四层上。 第六层设置在第五层上。 第四层的组成比x4在从第三层朝向第五层的第一方向上减小。 组成比x4的最大值不大于第三层的组成比。 组成比x4的最小值不小于第五层的组成比。

公开(公告)号：US20140327027A1

公开(公告)日：2014-11-06

申请号：US14332466

申请日：2014-07-16

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Kei Kaneko ,  Mitsuhiro Kushibe

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/504 ,  H01L33/60 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer.

摘要翻译： 一种半导体发光元件，包括：包括n型半导体层，p型半导体层和发光层的层叠结构体; 设置成与p型半导体层接触的p侧电极; 设置成与n型半导体层接触的n侧电极; 与n型半导体层接触而具有比n侧电极的反射率高的反射率的高反射性绝缘层; 以及设置在所述n侧电极的至少一部分上和所述高反射性绝缘层的至少一部分上并与n侧电极电连接的上金属层。 与n型半导体层接触的n侧电极的区域的面积小于夹在n型半导体层和上层金属层之间的高反射性绝缘层的区域的面积。

公开(公告)号：US20140217360A1

公开(公告)日：2014-08-07

申请号：US14244915

申请日：2014-04-04

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Kei Kaneko

IPC分类号： H01L33/38 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

摘要： A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.

摘要翻译： 半导体发光元件包括：第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，连接到第一半导体层的第一电极和第二电极， 在第二半导体层上。 面向第二半导体层的第二电极的一侧由银和银合金中的至少一种构成。 第二电极具有在与第二半导体层相对的第二电极的平面中具有发光波长或更小的发光波长的空隙。

公开(公告)号：US20130256691A1

公开(公告)日：2013-10-03

申请号：US13901602

申请日：2013-05-24

申请人： Kabushiki Kaisha Toshiba

发明人： Yasuo Ohba ,  Kei Kaneko ,  Toru Gotoda ,  Hiroshi Katsuno ,  Mitsuhiro Kushibe

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L2933/0016

摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1−xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.

摘要翻译： 提供一种制造半导体发光器件的方法。 该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。 该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8 @ x @ 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上堆叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

公开(公告)号：US20130134458A1

公开(公告)日：2013-05-30

申请号：US13744437

申请日：2013-01-18

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Kei Kaneko

IPC分类号： H01L33/40 ,  H01L33/32

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

摘要： A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.

公开(公告)号：US09373752B2

公开(公告)日：2016-06-21

申请号：US14244915

申请日：2014-04-04

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Kei Kaneko

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

摘要： A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.

摘要翻译： 半导体发光元件包括：第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，连接到第一半导体层的第一电极和第二电极， 在第二半导体层上。 面向第二半导体层的第二电极的一侧由银和银合金中的至少一种构成。 第二电极具有在与第二半导体层相对的第二电极的平面中具有发光波长或更小的发光波长的空隙。

公开(公告)号：US09362115B2

公开(公告)日：2016-06-07

申请号：US14805141

申请日：2015-07-21

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kei Kaneko ,  Mitsuhiro Kushibe ,  Hiroshi Katsuno ,  Shinji Yamada ,  Jumpei Tajima ,  Yasuo Ohba

IPC分类号： H01L27/15 ,  H01L21/02 ,  H01L29/20 ,  H01L29/201 ,  H01L29/36 ,  H01L29/15 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

CPC分类号： H01L33/12 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/154 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/36 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.

公开(公告)号：US09269868B2

公开(公告)日：2016-02-23

申请号：US14468505

申请日：2014-08-26

申请人： Kabushiki Kaisha Toshiba

发明人： Mitsuhiro Kushibe ,  Kei Kaneko ,  Yasuo Ohba ,  Hiroshi Katsuno ,  Shinji Yamada

IPC分类号： H01L27/15 ,  H01L33/32 ,  H01L33/00 ,  H01L33/04

CPC分类号： H01L33/32 ,  H01L33/0075 ,  H01L33/04

摘要： According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light emitting unit, a first layer, a second layer, and a third layer. The light emitting unit is provided between the n-type and p-type semiconductor layers, and includes a first well layer including a nitride semiconductor. The first layer is provided between the first well layer and the p-type semiconductor layer, and includes Alx1Ga1-x1-y1Iny1N having a first Mg concentration. The second layer is provided between the first layer and the p-type semiconductor layer, and includes Alx2Ga1-x2-y2Iny2N having a second Mg concentration higher than the first Mg concentration. The third layer is provided between the second layer and the p-type semiconductor layer, and includes Alx3Ga1-x3-y3Iny3N having a third Mg concentration higher than the first Mg concentration and lower than the second Mg concentration.

摘要翻译： 根据一个实施例，半导体发光元件包括包括氮化物半导体的n型半导体层，包括氮化物半导体的p型半导体层，发光单元，第一层，第二层和第三层 。 发光单元设置在n型和p型半导体层之间，并且包括包括氮化物半导体的第一阱层。 第一层设置在第一阱层和p型半导体层之间，并且包括具有第一Mg浓度的Al x Ga 1-x 1-y 1 In y N。 第二层设置在第一层和p型半导体层之间，并且包括具有比第一Mg浓度高的第二Mg浓度的Alx2Ga1-x2-y2Iny2N。 第三层设置在第二层和p型半导体层之间，并且包括具有比第一Mg浓度高的第三Mg浓度并且低于第二Mg浓度的Al x 3 Ga 1-x 3-y 3 In y 3 N。

公开(公告)号：US20150325749A1

公开(公告)日：2015-11-12

申请号：US14791548

申请日：2015-07-06

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Kei Kaneko ,  Mitsuhiro Kushibe

IPC分类号： H01L33/40 ,  H01L33/46 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/46 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/504 ,  H01L33/60 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer.

摘要翻译： 一种半导体发光元件，包括：包括n型半导体层，p型半导体层和发光层的层叠结构体; 设置成与p型半导体层接触的p侧电极; 设置成与n型半导体层接触的n侧电极; 与n型半导体层接触而具有比n侧电极的反射率高的反射率的高反射性绝缘层; 以及设置在所述n侧电极的至少一部分上和所述高反射性绝缘层的至少一部分上并与n侧电极电连接的上金属层。 与n型半导体层接触的n侧电极的区域的面积小于夹在n型半导体层和上层金属层之间的高反射性绝缘层的区域的面积。

公开(公告)号：US09059374B2

公开(公告)日：2015-06-16

申请号：US13901602

申请日：2013-05-24

申请人： Kabushiki Kaisha Toshiba

发明人： Yasuo Ohba ,  Kei Kaneko ,  Toru Gotoda ,  Hiroshi Katsuno ,  Mitsuhiro Kushibe

IPC分类号： H01L21/00 ,  H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L2933/0016

摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1−xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.

摘要翻译： 提供一种制造半导体发光器件的方法。 该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。 该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8和n 1; x 1和n 1; 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上堆叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。