公开(公告)号：US07439191B2

公开(公告)日：2008-10-21

申请号：US10117692

申请日：2002-04-05

申请人： Kam Law ,  Quanyuan Shang ,  William Reid Harshbarger ,  Dan Maydan

发明人： Kam Law ,  Quanyuan Shang ,  William Reid Harshbarger ,  Dan Maydan

IPC分类号： H01L21/31

CPC分类号： H01L27/127 ,  C23C16/24 ,  C23C16/45525 ,  C23C16/45542 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/66765

摘要： A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-gate transistor or a top-gate transistor, including one or more silicon layers may, be formed using such cyclical deposition techniques.

摘要翻译： 使用循环沉积工艺的硅层沉积方法。 循环沉积工艺包括在衬底结构上交替地吸附含硅前体和还原气体。 可以使用这种循环沉积技术形成薄膜晶体管，例如包括一个或多个硅层的底栅晶体管或顶栅晶体管。

公开(公告)号：US06869838B2

公开(公告)日：2005-03-22

申请号：US10118864

申请日：2002-04-09

申请人： Kam Law ,  Quanyuan Shang ,  William Reid Harshbarger ,  Dan Maydan

发明人： Kam Law ,  Quanyuan Shang ,  William Reid Harshbarger ,  Dan Maydan

IPC分类号： H01L21/336 ,  H01L27/10

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate structure. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a silicon-containing passivation layer, may be formed using such cyclical deposition techniques.

摘要翻译： 描述了使用循环沉积工艺的钝化层沉积的方法。 循环沉积工艺可以包括在衬底结构上交替地吸附含硅前体和反应气体。 可以使用这种循环沉积技术来形成包括含硅钝化层的诸如底栅晶体管或顶栅晶体管的薄膜晶体管。

公开(公告)号：US5892328A

公开(公告)日：1999-04-06

申请号：US884000

申请日：1997-06-27

申请人： Quanyuan Shang ,  Kam Law ,  Dan Maydan

发明人： Quanyuan Shang ,  Kam Law ,  Dan Maydan

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/02 ,  H01J7/24

CPC分类号： H01J37/32192 ,  H01J37/32357

摘要： A plasma-based generator for use with a power source including a plasma tube having a hollow tube body in which a plasma is generated by the power source; a first support structure supporting a downstream end of the plasma tube; and a second support structure holding an upstream end of the plasma tube, the second support structure connected to the first support structure, the second support structure including an expansion joint which changes its length to accommodate a lengthening and a shortening of the plasma tube due to its thermal expansion and contraction when plasma processing is performed within the plasma tube.

摘要翻译： 一种用于电源的等离子体发生器，包括具有中空管体的等离子体管，其中由电源产生等离子体; 支撑等离子体管的下游端的第一支撑结构; 以及保持所述等离子体管的上游端的第二支撑结构，所述第二支撑结构连接到所述第一支撑结构，所述第二支撑结构包括膨胀接头，所述膨胀接头改变其长度以适应等离子体管的延长和缩短 其在等离子体管内进行等离子体处理时的热膨胀和收缩。

公开(公告)号：US06610354B2

公开(公告)日：2003-08-26

申请号：US09886174

申请日：2001-06-18

申请人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

发明人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

IPC分类号： C23C1640

CPC分类号： H01J11/38 ,  H01J11/12

摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

公开(公告)号：US6055927A

公开(公告)日：2000-05-02

申请号：US782169

申请日：1997-01-14

申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

IPC分类号： B08B7/00 ,  C23C16/42 ,  C23C16/44 ,  C23C16/52 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4405

摘要： An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.

公开(公告)号：US07122962B2

公开(公告)日：2006-10-17

申请号：US10460837

申请日：2003-06-11

申请人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

发明人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

IPC分类号： H01J17/49

CPC分类号： H01J11/38 ,  H01J11/12

摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

摘要翻译： 包括低k电介质层的等离子体显示面板。 在一个实施例中，电介质层包括氟掺杂氧化硅层，例如SiOF层。 在另一个实施例中，电介质层包括Black Diamond TM层。 在某些实施例中，覆盖层例如SiN或SiON沉积在电介质层上。

公开(公告)号：US06468601B1

公开(公告)日：2002-10-22

申请号：US09523538

申请日：2000-03-10

申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

IPC分类号： B05D306

CPC分类号： C23C16/4405

摘要： An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.

摘要翻译： 用于在用于沉积氮化硅的处理室中减少白色粉末的生产的装置和方法。 该方法的步骤包括加热处理室壁的至少一部分; 提供覆盖所述处理室的壁的主要部分的衬垫; 提供连接到处理室内部的远程室; 导致远程室中的清洁气体的等离子体; 并将清洁气体的等离子体的一部分流入处理室。 该装置包括具有壁的沉积室; 用于加热壁的装置，热耦合到壁的装置; 覆盖壁的大部分的衬垫; 设置在室外的远程室; 活化源，其适于将能量输送到所述远程室中; 用于将前体气体从远程气体供给流入远程室的第一导管，其中激活源被激活以形成反应性物质; 以及用于使反应物质从远程室流入沉积室的第二导管。

公开(公告)号：US5788778A

公开(公告)日：1998-08-04

申请号：US707491

申请日：1996-09-16

申请人： Quanyuan Shang ,  Kam S. Law ,  Dan Maydan

发明人： Quanyuan Shang ,  Kam S. Law ,  Dan Maydan

IPC分类号： B08B7/00 ,  C23C16/44 ,  H01L21/205 ,  H01L21/3065 ,  B08B7/04 ,  B08B5/00 ,  C03C15/00 ,  C03C23/06

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  Y10S156/916

摘要： A method for cleaning a deposition chamber that is used in fabricating electronic devices including the steps of delivering a precursor gas into a remote chamber that is outside of the deposition chamber, activating the precursor gas in the remote chamber via a high power source to form a reactive species, flowing the reactive species from the remote chamber into the deposition chamber, and using the reactive species that is flowed into the deposition chamber from the remote chamber to clean the inside of the deposition chamber.

摘要翻译： 一种用于清洁用于制造电子器件的沉积室的方法，包括以下步骤：将前体气体输送到位于沉积室外的远程室中，经由高功率源激活远程室中的前体气体，以形成 将反应性物质从远程室流入沉积室，以及使用从远程室流入沉积室的反应物质以清洁沉积室的内部。

公开(公告)号：US06825134B2

公开(公告)日：2004-11-30

申请号：US10254627

申请日：2002-09-24

申请人： Kam S. Law ,  Quanyuan Shang ,  William R. Harshbarger ,  Dan Maydan ,  Soo Young Choi ,  Beom Soo Park ,  Sanjay Yadav ,  John M. White

发明人： Kam S. Law ,  Quanyuan Shang ,  William R. Harshbarger ,  Dan Maydan ,  Soo Young Choi ,  Beom Soo Park ,  Sanjay Yadav ,  John M. White

IPC分类号： H01L21471

CPC分类号： C23C16/45542 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/31683 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/32105 ,  H01L21/3211 ,  H01L29/66765

摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.

摘要翻译： 描述了膜层沉积的方法。 使用循环沉积工艺沉积膜层。 循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。

公开(公告)号：US07732010B2

公开(公告)日：2010-06-08

申请号：US11406136

申请日：2006-04-18

申请人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

发明人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

IPC分类号： C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18

摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.

摘要翻译： 一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层 铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸 约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上 基板接触面积。