公开(公告)号：US09240113B2

公开(公告)日：2016-01-19

申请号：US13270444

申请日：2011-10-11

申请人： Sung Q Lee ,  Kang-Ho Park

发明人： Sung Q Lee ,  Kang-Ho Park

IPC分类号： G01S15/00 ,  G08B13/16 ,  G01S15/04

CPC分类号： G08B13/1609 ,  G01S15/04

摘要： Disclosed are a method for measuring a acoustic transfer function of a predetermined space to be secured or monitored through a correlation between sound signals acquired from a sound source generating device and a sound measuring device and a method and a system for judging whether there is an intrusion object by using a difference between an initially set acoustic transfer function information and varied acoustic transfer function information by using the method for measuring the transfer function. In the present disclosure, when an object moves or an intrusion object is generated in a predetermined space, intrusion or no intrusion is monitored by variation of the acoustic transfer function varied by the intrusion object even though there is no noise generated by the intrusion object.

摘要翻译： 公开了一种通过从声源生成装置获取的声音信号与声音测量装置之间的相关性来测量要保证或监视的预定空间的声学传递函数的方法和用于判断是否存在入侵的方法和系统 通过使用用于测量传递函数的方法，通过使用初始设置的声学传递函数信息和变化的声学传递函数信息之间的差异来对象。 在本公开中，当对象移动或者在预定空间中产生入侵对象时，即使没有入侵对象产生的噪声，也可以通过入侵对象改变的声音传递函数的变化来监视入侵或不入侵。

公开(公告)号：US09103908B2

公开(公告)日：2015-08-11

申请号：US13289392

申请日：2011-11-04

申请人： Kang-Ho Park ,  Sung Q Lee ,  Woo Seok Yang ,  Jongdae Kim ,  Semyung Wang ,  Daesung Kim ,  Kihyun Kim

发明人： Kang-Ho Park ,  Sung Q Lee ,  Woo Seok Yang ,  Jongdae Kim ,  Semyung Wang ,  Daesung Kim ,  Kihyun Kim

IPC分类号： G01S15/00 ,  G01S15/04 ,  G01S7/52 ,  G01S15/89

CPC分类号： G01S15/04 ,  G01S7/52003 ,  G01S15/89

摘要： Disclosed is a security monitoring method determining whether a trespasser is detected and a position of the trespasser in a set security space and monitoring sound generated at the position of the trespasser by using an acoustic image generated from acoustic signals generated by an acoustic generating device and an acoustic measuring device in an array type. An exemplary embodiment of the present disclosure provides a security monitoring system including: an acoustic generating device that generates acoustic signals; a plurality of acoustic measuring devices that receive the acoustic signals; and an acoustic image processing device that generates an acoustic image using a beamforming algorithm from the acoustic signals received in the plurality of acoustic measuring devices and determines a position of a trespasser by comparing the acoustic image after the trespasser is detected with the acoustic image before the trespasser is detected.

摘要翻译： 公开了一种安全监控方法，其通过使用由声发生装置产生的声信号产生的声像来确定是否检测到侵入者以及在设定的安全空间中的侵入者的位置以及在侵入者的位置处产生的监听声音， 阵列式声学测量装置。 本公开的示例性实施例提供了一种安全监控系统，包括：产生声信号的声产生装置; 多个声学测量装置，其接收声学信号; 以及声学图像处理装置，其使用来自在所述多个声学测量装置中接收的声学信号的波束形成算法生成声学图像，并且通过将侵入侵入者之后的声学图像与所述声学图像进行比较来确定侵入者的位置， 检测到侵入者。

公开(公告)号：US09197976B2

公开(公告)日：2015-11-24

申请号：US13601883

申请日：2012-08-31

申请人： Kang-Ho Park ,  Sung Q Lee

发明人： Kang-Ho Park ,  Sung Q Lee

IPC分类号： G08B13/00 ,  H04R29/00 ,  G08B13/16 ,  G08B13/196

CPC分类号： H04R29/007 ,  G08B13/1609 ,  G08B13/1672 ,  G08B13/19695 ,  G08B13/19697

摘要： The present disclosure relates to security system and method based on sound field variation pattern. The present disclosure identifies a slow variation pattern of a acoustic transfer function occurring due to a gradual change in temperature and humidity of air according to a change in time and a change in a characteristic of an acoustic element, from a sudden sound field variation pattern within an internal space occurring due to an intrusion from an outside, activation of an air conditioning and heating device, and the like, or within a surveillance space induced by a change in an acoustic physical property. The present disclosure identifies sound field variation patterns occurring due to a change in an acoustic structure by an intrusion and a change in temperature and convection by air conditioning and heating. The present disclosure stores and verifies image information using an image obtaining apparatus.

摘要翻译： 本公开涉及基于声场变化模式的安全系统和方法。 本公开标识出由于随着时间的变化和声学元件的特性的变化而由于空气的温度和湿度的逐渐变化而发生的声学传递函数的缓慢的变化模式， 由于从外部入侵而发​​生的内部空间，空调和加热装置的激活等，或者由声学物理性质的改变引起的监视空间内。 本发明公开了由于入侵而导致的声学结构的变化而发生的声场变化模式，以及通过空调和加热的温度和对流的变化。 本公开使用图像获取装置来存储和验证图像信息。

公开(公告)号：US20130162821A1

公开(公告)日：2013-06-27

申请号：US13601883

申请日：2012-08-31

申请人： Kang-Ho Park ,  Sung Q Lee

发明人： Kang-Ho Park ,  Sung Q Lee

IPC分类号： H04R29/00 ,  H04N7/18

CPC分类号： H04R29/007 ,  G08B13/1609 ,  G08B13/1672 ,  G08B13/19695 ,  G08B13/19697

摘要： The present disclosure relates to security system and method based on sound field variation pattern. The present disclosure identifies a slow variation pattern of a acoustic transfer function occurring due to a gradual change in temperature and humidity of air according to a change in time and a change in a characteristic of an acoustic element, from a sudden sound field variation pattern within an internal space occurring due to an intrusion from an outside, activation of an air conditioning and heating device, and the like, or within a surveillance space induced by a change in an acoustic physical property. The present disclosure identifies sound field variation patterns occurring due to a change in an acoustic structure by an intrusion and a change in temperature and convection by air conditioning and heating. The present disclosure stores and verifies image information using an image obtaining apparatus.

摘要翻译： 本公开涉及基于声场变化模式的安全系统和方法。 本公开标识出由于随着时间的变化和声学元件的特性的变化而由于空气的温度和湿度的逐渐变化而发生的声学传递函数的缓慢的变化模式， 由于从外部入侵而发​​生的内部空间，空调和加热装置的激活等，或者由声学物理性质的改变引起的监视空间内。 本发明公开了由于入侵而导致的声学结构的变化而发生的声场变化模式，以及通过空调和加热的温度和对流的变化。 本公开使用图像获取装置来存储和验证图像信息。

公开(公告)号：US5880012A

公开(公告)日：1999-03-09

申请号：US842868

申请日：1997-07-17

申请人： Jeong-Sook Ha ,  Kang-Ho Park

发明人： Jeong-Sook Ha ,  Kang-Ho Park

IPC分类号： H01L21/70 ,  G01Q60/00 ,  G01Q80/00 ,  G01Q90/00 ,  H01L21/20

CPC分类号： B82Y15/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  Y10S438/962 ,  Y10S977/856

摘要： The present invention provides a method for making semiconductor nanometer-scale wire. The method comprises the steps of: forming a nitride film on a semiconductor substrate by implanting a nitrogen ions at a high temperature; forming a nitride film pattern with several nanometer line width and spaced by several nanometer therebetween by using an Atomic Force Microscope; forming a silicon oxide film by selectively thermal-oxidizing an exposed portion of the semiconductor substrate; removing the nitride film pattern by using the Atomic Force Microscope; forming a semiconductor layer by using Molecular Beam Epitaxy method on the surface of the silicon oxide film and on the surface of the semiconductor substrate exposed by removing the nitride film pattern; and selectively removing the silicon oxide film and the semiconductor layer on the surface of the silicon oxide film through thermal treatment.

摘要翻译： 本发明提供一种制造半导体纳米级线的方法。 该方法包括以下步骤：通过在高温下注入氮离子在半导体衬底上形成氮化物膜; 通过使用原子力显微镜形成几纳米线宽并间隔几纳米的氮化物膜图案; 通过选择性地热氧化半导体衬底的暴露部分来形成氧化硅膜; 通过使用原子力显微镜去除氮化物膜图案; 通过使用分子束外延法在氧化硅膜的表面和通过去除氮化物膜图案而暴露的半导体衬底的表面上形成半导体层; 并且通过热处理选择性地去除氧化硅膜表面上的氧化硅膜和半导体层。

公开(公告)号：US5961741A

公开(公告)日：1999-10-05

申请号：US842867

申请日：1997-04-17

申请人： Kang-Ho Park ,  Jeong-Sook Ha

发明人： Kang-Ho Park ,  Jeong-Sook Ha

IPC分类号： H01L31/04 ,  H01L31/07 ,  H01L31/108 ,  H01L31/06 ,  H01L27/095

CPC分类号： H01L31/07 ,  H01L31/108 ,  Y02E10/50

摘要： The present invention provides a metal semiconductor optical device which is capable of thinly uniformly growing a metal film on a semiconductor substrate using a layer functioning as an interface active agent and decreasing the density of interface energy state occurring between the metal thin film and the semiconductor, to thereby enhance the optical absorption efficiency of light beam. The interface single atomic layer is formed by one of the group V elements, e.g., one of antimony(Sb) or arsenic(As). Additionally, the metal thin film has a thickness of approximately 30 .ANG..

摘要翻译： 本发明提供一种金属半导体光学元件，其能够使用作为界面活性剂的层在半导体基板上薄均匀地生长金属膜，并且降低了在金属薄膜和半导体之间发生的界面能态的密度， 从而提高光束的光吸收效率。 界面单原子层由V族元素之一形成，例如锑（Sb）或砷（As）之一。 另外，金属薄膜的厚度约为30。

公开(公告)号：US5780851A

公开(公告)日：1998-07-14

申请号：US903796

申请日：1997-07-31

申请人： Jeong-Sook Ha ,  Wan-Soo Yun ,  Kang-Ho Park

发明人： Jeong-Sook Ha ,  Wan-Soo Yun ,  Kang-Ho Park

IPC分类号： C03B29/04 ,  C23C16/04 ,  C23C16/27 ,  G01Q60/16 ,  G01Q70/14 ,  H01J9/02 ,  H01J37/26

CPC分类号： G01Q60/16 ,  B82Y35/00 ,  C23C16/04 ,  C23C16/271 ,  G01Q70/14 ,  H01J9/025

摘要： The present invention provides a method for forming a diamond selectively on the topmost part of a pointed tip by applying negative bias to the tip in a chemical vapor deposition system. High temperature tungsten filament is placed above the sharp tip, which is biased negatively to induce selective nucleation and growth of diamond on the topmost part of it.

摘要翻译： 本发明提供了一种通过在化学气相沉积系统中向尖端施加负偏压来在尖端的最上部选择性地形成金刚石的方法。 将高温钨丝放置在锋利的尖端上方，其被负偏压以诱导金刚石在其最高部分上的选择性成核和生长。

公开(公告)号：US5500047A

公开(公告)日：1996-03-19

申请号：US354037

申请日：1994-12-06

申请人： Kang-Ho Park ,  Jeong-Sook Ha ,  Seong-Ju Park ,  El-Hang Lee

发明人： Kang-Ho Park ,  Jeong-Sook Ha ,  Seong-Ju Park ,  El-Hang Lee

IPC分类号： H01L21/203 ,  C01B3/00 ,  C23C16/00 ,  C23C16/452 ,  G21K5/00

CPC分类号： C01B3/0094 ,  C23C16/452 ,  Y02E60/327

摘要： A surface adsorption apparatus for dissociating H.sub.2 molecules into atomic hydrogen in a vacuum vessel and adsorbing the atomic hydrogen on a sample surface is disclosed. A vacuum tube is mounted in the vacuum vessel. A nozzle is connected to the vacuum tube having a plurality of bent portions. A heating member receives electrical power from a power supply source and heats the nozzle to a predetermined temperature. A heat shielding member is located in a path of the atomic hydrogen between one end of the nozzle and the sample surface for shielding the sample surface from heat radiating from the nozzle. The H.sub.2 molecules collide with inner wall surfaces of the bent portions to be readily dissociate into the atomic hydrogen. The atomic dissociated hydrogen propagates toward the sample surface and is adsorbed on the sample surface. Since the nozzle comprises bent portions, H.sub.2 molecules frequently collide with inner wall surfaces of the nozzle to readily dissociate into atomic hydrogen. The H.sub.2 collision efficiency is significantly improved by increased surface collisions with the bent portions. Because the bent portions of the nozzle are heated by the heating member, the construction of the apparatus is simplified.

摘要翻译： 公开了一种用于在真空容器中将H 2分子解离成原子氢并将样品表面上的氢原子吸附的表面吸附装置。 真空管安装在真空容器中。 喷嘴连接到具有多个弯曲部分的真空管。 加热构件从电源接收电力并将喷嘴加热至预定温度。 热屏蔽构件位于喷嘴的一端和样品表面之间的原子氢的路径中，用于屏蔽样品表面免受从喷嘴辐射的热。 H2分子与弯曲部分的内壁表面碰撞，容易解离成原子氢。 原子解离的氢向样品表面传播并吸附在样品表面上。 由于喷嘴包括弯曲部分，所以H2分子经常与喷嘴的内壁表面碰撞以容易地解离成原子氢。 通过增加与弯曲部分的表面碰撞，H2碰撞效率显着提高。 由于喷嘴的弯曲部分被加热部件加热，因此简化了装置的结构。

公开(公告)号：US5710051A

公开(公告)日：1998-01-20

申请号：US694316

申请日：1996-08-08

申请人： Kang-Ho Park ,  Jeong-Sook Ha ,  El-Hang Lee

发明人： Kang-Ho Park ,  Jeong-Sook Ha ,  El-Hang Lee

IPC分类号： H01L29/772 ,  B82B3/00 ,  G01Q60/10 ,  G01Q70/14 ,  H01L21/3205 ,  H01L21/335 ,  H01L29/76 ,  H01L49/00 ,  H01L21/00

CPC分类号： H01L49/006 ,  B82Y10/00 ,  H01L21/32051 ,  H01L29/66439 ,  H01L29/7613 ,  Y10S977/851 ,  Y10S977/855 ,  Y10S977/861 ,  Y10S977/875 ,  Y10S977/937

摘要： A method for the manufacture of a single electron transistor (SET) in a vacuum state, wherein the SET operates in room temperature, comprises the steps of: approaching an Au tip of a scanning tunneling microscopy (STM) on top of a silicon-substrate having a silicon oxide layer on top thereof to maintain a distance from top of the oxide layer to end of the Au tip of the STM; forming an Au cluster on top of the oxide layer by using a low field evaporation method employing the STM, thereby forming a two dimensional island structure on top of the oxide layer, wherein the low field evaporation method employing the STM generates an electronic pulse between top of the oxide layer and end of the Au tip of the STM by applying a voltage to the Au tip of the STM; forming a source and a drain to both sides of the Au cluster in the two dimensional island structure, respectively, in such a way that the Au cluster in the two dimensional island structure maintains a gap with the source and the drain, thereby forming an electron tunneling barrier on right and left of the Au cluster in the two dimensional island structure; and joining a gate on bottom of the silicon-substrate.

摘要翻译： 一种用于在真空状态下制造单电子晶体管（SET）的方法，其中SET在室温下工作，包括以下步骤：在硅衬底顶部接近扫描隧道显微镜（STM）的Au尖端 在其顶部具有氧化硅层以保持从氧化物顶部到STM的Au尖端的距离; 通过使用采用STM的低场蒸发法在氧化物层的顶部上形成Au簇，从而在氧化物层的顶部形成二维岛状结构，其中采用STM的低场蒸发方法在顶部产生电子脉冲 通过向STM的Au尖端施加电压而使STM的氧化物层和Au尖端的端部; 在二维岛结构中分别在Au簇的两侧形成源极和漏极，使得二维岛状结构中的Au簇与源极和漏极保持间隙，从而形成电子 Au簇在二维岛结构左右的隧道势垒; 并且在硅衬底的底部连接栅极。