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1.发明授权Magnetoresistive effect element and magnetic random access memory using the same 有权磁阻效应元件和磁性随机存取存储器使用相同公开(公告)号：US09379312B2
公开(公告)日：2016-06-28
申请号：US13518974
申请日：2010-12-14
申请人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
发明人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
IPC分类号： H01L29/82 , H01L43/02 , B82Y25/00 , G11C11/14 , H01F10/32 , H01L43/08 , H01L43/10 , G11C11/16 , G11C19/08 , H01L27/22
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , G11C19/0841 , G11C2213/74 , G11C2213/79 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.
摘要翻译： 本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。 畴壁运动层由具有垂直磁各向异性的铁磁材料制成。 间隔层形成在畴壁运动层上，由非磁性材料制成。 参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。 畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。 畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值 。
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2.发明申请MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME 有权磁阻效应元件和磁性随机存取存储器公开(公告)号：US20130175645A1
公开(公告)日：2013-07-11
申请号：US13518974
申请日：2010-12-14
申请人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
发明人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , G11C19/0841 , G11C2213/74 , G11C2213/79 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.
摘要翻译： 本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。 畴壁运动层由具有垂直磁各向异性的铁磁材料制成。 间隔层形成在畴壁运动层上，由非磁性材料制成。 参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。 畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。 畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值 。
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公开(公告)号：US07817462B2
公开(公告)日：2010-10-19
申请号：US11887631
申请日：2006-03-23
IPC分类号： G11C11/00
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： MRAM includes a first wiring, a second wiring, and a memory cell. The first wiring extends to a first direction, and the second wiring extends to a second direction. The memory cell includes a free magnetic layer in which a plurality of magnetic layers coupled anti-ferromagnetically through non-magnetic layers are laminated, and is provided at an intersection of the first and second wirings. The magnetization direction of the free magnetic layer is different from the first and second directions. The writing method includes (a) reading a first data stored in the memory cell; (b) comparing a second data to be written to the memory cell and the first data; and (c) changing a direction of a first write current supplied to the first wiring and a direction of the second write current to be supplied to the second wiring, when the first data and second data are different.
摘要翻译： MRAM包括第一布线，第二布线和存储单元。 第一布线延伸到第一方向，第二布线延伸到第二方向。 存储单元包括自由磁性层，其中层叠有反铁磁性地通过非磁性层耦合的多个磁性层，并且设置在第一和第二布线的交叉点。 自由磁性层的磁化方向与第一和第二方向不同。 写入方法包括（a）读取存储在存储单元中的第一数据; （b）将待写入的第二数据与所述第一数据进行比较; 以及（c）当第一数据和第二数据不同时，改变提供给第一布线的第一写入电流的方向和要提供给第二布线的第二写入电流的方向。
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公开(公告)号：US20090141540A1
公开(公告)日：2009-06-04
申请号：US11887631
申请日：2006-03-23
IPC分类号： G11C11/02 , G11C11/14 , G11C11/416
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： MRAM includes a first wiring, a second wiring, and a memory cell. The first wiring extends to a first direction, and the second wiring extends to a second direction. The memory cell includes a free magnetic layer in which a plurality of magnetic layers coupled anti-ferromagnetically through non-magnetic layers are laminated, and is provided at an intersection of the first and second wirings. The magnetization direction of the free magnetic layer is different from the first and second directions. The writing method includes (a) reading a first data stored in the memory cell; (b) comparing a second data to be written to the memory cell and the first data; and (c) changing a direction of a first write current supplied to the first wiring and a direction of the second write current to be supplied to the second wiring, when the first data and second data are different.
摘要翻译： MRAM包括第一布线，第二布线和存储单元。 第一布线延伸到第一方向，第二布线延伸到第二方向。 存储单元包括自由磁性层，其中层叠有反铁磁性地通过非磁性层耦合的多个磁性层，并且设置在第一和第二布线的交叉点。 自由磁性层的磁化方向与第一和第二方向不同。 写入方法包括（a）读取存储在存储单元中的第一数据; （b）将待写入的第二数据与所述第一数据进行比较; 以及（c）当第一数据和第二数据不同时，改变提供给第一布线的第一写入电流的方向和要提供给第二布线的第二写入电流的方向。
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5.发明申请公开(公告)号：US20060038213A1
公开(公告)日：2006-02-23
申请号：US11208370
申请日：2005-08-19
IPC分类号： H01L29/94
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N−1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N−1. The free magnetic layer is designed so that antiferromagnetic coupling(s) between the j-th and (j+1)-th ferromagnetic layers is stronger than that between the first and second ferromagnetic layers, j being any of integers ranging from 2 to N−2.
摘要翻译： 磁存储器包括：包括自由磁性层的磁阻元件; 第一互连件，其在第一方向上倾斜于所述自由磁性层的容易轴线延伸; 沿与第一方向大致正交的第二方向延伸的第二互连; 以及写入电路，通过在所述第一互连上形成第一写入电流将数据写入所述自由磁性层，然后在所述第二互连上开启第二写入电流，所述第一写入电流导通。 自由磁性层包括：第一至第N铁磁层和N等于或大于4的第一至第（N-1）个非磁性层，第i个非磁性层设置在i 和第（i + 1）个铁磁层，其中i为等于或小于N-1的任意自然数。 自由磁性层被设计成使得第j和第（j + 1）个铁磁层之间的反铁磁耦合比第一和第二铁磁层之间的反铁磁耦合更强，j是从2到N的整数中的任何一个 -2。
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6.发明授权公开(公告)号：US07242047B2
公开(公告)日：2007-07-10
申请号：US11208370
申请日：2005-08-19
IPC分类号： H01L29/76
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N−1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N−1. The free magnetic layer is designed so that antiferromagnetic coupling(s) between the j-th and (j+1)-th ferromagnetic layers is stronger than that between the first and second ferromagnetic layers, j being any of integers ranging from 2 to N−2.
摘要翻译： 磁存储器包括：包括自由磁性层的磁阻元件; 第一互连件，其在第一方向上倾斜于所述自由磁性层的容易轴线延伸; 沿与第一方向大致正交的第二方向延伸的第二互连; 以及写入电路，通过在所述第一互连上形成第一写入电流将数据写入所述自由磁性层，然后在所述第二互连上开启第二写入电流，所述第一写入电流导通。 自由磁性层包括：第一至第N铁磁层和N等于或大于4的第一至第（N-1）个非磁性层，第i个非磁性层设置在i 和第（i + 1）个铁磁层，其中i为等于或小于N-1的任意自然数。 自由磁性层被设计成使得第j和第（j + 1）个铁磁层之间的反铁磁耦合比第一和第二铁磁层之间的反铁磁耦合更强，j是从2到N的整数中的任何一个 -2。
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公开(公告)号：US20060056250A1
公开(公告)日：2006-03-16
申请号：US10512545
申请日：2003-04-21
IPC分类号： G11C7/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16
摘要： A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulation film covering the upper surface side of the substrate, memory cells, and plugs penetrating the interlayer insulation film. The memory cell includes a first magnetic layer formed on the upper surface side of the interlayer insulation film, a tunnel insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulation layer. The plug is connected electrically with the first magnetic layer. The tunnel current passing part of the tunnel insulation layer located between the first and second magnetic layers is arranged, at least partially, so as not to overlap the plug in the direction perpendicular to the surface of the substrate.
摘要翻译： 一种用于消除磁隧道结隧道绝缘膜中的缺陷并用于抑制在存储器中使用磁性隧道结的MRAM中的有缺陷位的产生的技术。 磁性存储器包括基板，覆盖基板的上表面侧的层间绝缘膜，存储单元和穿透层间绝缘膜的插塞。 存储单元包括形成在层间绝缘膜的上表面侧的第一磁性层，形成在第一磁性层上的隧道绝缘层和形成在隧道绝缘层上的第二磁性层。 插头与第一磁性层电连接。 位于第一和第二磁性层之间的隧道绝缘层的隧道电流通过部分被布置成至少部分地不与垂直于衬底的表面的方向上的插塞重叠。
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公开(公告)号：US07177179B2
公开(公告)日：2007-02-13
申请号：US10512545
申请日：2003-04-21
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16
摘要： A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulation film covering the upper surface side of the substrate, memory cells, and plugs penetrating the interlayer insulation film. The memory cell includes a first magnetic layer formed on the upper surface side of the interlayer insulation film, a tunnel insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulation layer. The plug is connected electrically with the first magnetic layer. The tunnel current passing part of the tunnel insulation layer located between the first and second magnetic layers is arranged, at least partially, so as not to overlap the plug in the direction perpendicular to the surface of the substrate.
摘要翻译： 一种用于消除磁隧道结隧道绝缘膜中的缺陷并用于抑制在存储器中使用磁性隧道结的MRAM中的有缺陷位的产生的技术。 磁性存储器包括基板，覆盖基板的上表面侧的层间绝缘膜，存储单元和穿透层间绝缘膜的插塞。 存储单元包括形成在层间绝缘膜的上表面侧的第一磁性层，形成在第一磁性层上的隧道绝缘层和形成在隧道绝缘层上的第二磁性层。 插头与第一磁性层电连接。 位于第一和第二磁性层之间的隧道绝缘层的隧道电流通过部分被布置成至少部分地不与垂直于衬底的表面的方向上的插塞重叠。
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公开(公告)号：US20070019466A1
公开(公告)日：2007-01-25
申请号：US11380962
申请日：2006-05-01
申请人： Tetsuhiro Suzuki , Sadahiko Miura
发明人： Tetsuhiro Suzuki , Sadahiko Miura
IPC分类号： G11C11/14
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L43/08
摘要： A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.
摘要翻译： 提供一种磁性随机存取存储器，包括基板，磁阻元件，其包括具有可逆自发磁化的铁磁层，该铁磁层根据自发磁化的方向而在电阻上变化，并且形成在基板上方，并且延伸 在第一方向上用于产生电流以产生要施加到磁阻元件的磁场。 所述布线形成为穿过比所述磁阻元件更靠近所述基板的第一位置，并且当从垂直于所述基板的主表面的方向观察时不与所述磁阻元件重叠，并且所述第二位置在所述 磁阻元件
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公开(公告)号：US07254054B2
公开(公告)日：2007-08-07
申请号：US11380962
申请日：2006-05-01
申请人： Tetsuhiro Suzuki , Sadahiko Miura
发明人： Tetsuhiro Suzuki , Sadahiko Miura
IPC分类号： G11C11/00
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L43/08
摘要： A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.
摘要翻译： 提供一种磁性随机存取存储器，包括基板，磁阻元件，其包括具有可逆自发磁化的铁磁层，该铁磁层根据自发磁化的方向而在电阻上变化，并且形成在基板上方，并且延伸 在第一方向上用于产生电流以产生要施加到磁阻元件的磁场。 所述布线形成为穿过比所述磁阻元件更靠近所述基板的第一位置，并且当从垂直于所述基板的主表面的方向观察时不与所述磁阻元件重叠，并且所述第二位置在所述 磁阻元件
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