Method for controlling technical processes
    1.
    发明授权
    Method for controlling technical processes 失效
    控制技术过程的方法

    公开(公告)号:US06600964B2

    公开(公告)日:2003-07-29

    申请号:US09860072

    申请日:2001-05-17

    IPC分类号: G06F1900

    CPC分类号: G05B19/056 G05B19/0426

    摘要: Due to the diversity of the requirements to be met for controlling the movement of production machines, a system and method based on a range of hardware modules, which are provided with adequate computing capacity, a real-time operating system and specific basic functionality, a network (for example Profibus) for constructing a decentralized system with distributed control functionality and also operating and monitoring units with planned interfaces is disclosed. The invention comprises a configurable, distributable and programmable control software system for individually adapting the control solution to the client's requirements, with which the planned control solution is distributed among hardware modules and in which an engineering system used for management, configuration, programming, monitoring, debugging and commissioning.

    摘要翻译: 由于为了控制生产机器的运动而满足的要求的多样性,基于提供足够的计算能力的一系列硬件模块的系统和方法,实时操作系统和特定的基本功能, 公布了用于构建具有分布式控制功能的分散式系统的网络(例如Profibus)以及具有计划的接口的操作和监视单元。 本发明包括一种可配置的,可分配的和可编程的控制软件系统,用于根据客户的要求单独调整控制解决方案,计划的控制解决方案通过该控制解决方案在硬件模块之间分配,其中用于管理,配置,编程,监控的工程系统, 调试和调试。

    Universal motion control
    2.
    发明授权
    Universal motion control 有权
    通用运动控制

    公开(公告)号:US06539268B1

    公开(公告)日:2003-03-25

    申请号:US09591421

    申请日:2000-06-10

    IPC分类号: G06F1900

    CPC分类号: G05B19/414

    摘要: The basic available command library of the run-time system (RTS1-RTS4) of a universal motion control (combined SPS/NC control) can be expanded dynamically and according to the user's specific requirements by loading technology packets TP (with corresponding technology object types TO). Thus, a dynamic scaling of a universal motion control UMC is possible. Due to a consistent integration and communication platform API, the functionality of extremely prepared technology packets TP can also be integrated into the control.

    摘要翻译: 通用运动控制(组合SPS / NC控制)的运行时系统(RTS1-RTS4)的基本可用命令库可以动态扩展,并根据用户的具体要求通过加载技术数据包TP(与对应的技术对象类型 至)。 因此,通用运动控制UMC的动态缩放是可能的。由于一致的集成和通信平台API,极其准备的技术分组TP的功能也可以被集成到控制中。

    Universal motion control
    3.
    发明授权
    Universal motion control 有权
    通用运动控制

    公开(公告)号:US06950715B2

    公开(公告)日:2005-09-27

    申请号:US10385809

    申请日:2003-03-11

    CPC分类号: G05B19/414

    摘要: The basic available command library of the run-time system (RTS1-RTS4) of a universal motion control (combined SPS/NC control) can be expanded dynamically and according to the user's specific requirements by loading technology packets TP (with corresponding technology object types TO). Thus, a dynamic scaling of a universal motion control UMC is possible.Due to a consistent integration and communication platform API, the functionality of extremely prepared technology packets TP can also be integrated into the control.

    摘要翻译: 通用运动控制(组合SPS / NC控制)的运行时系统(RTS 1 -RTS 4)的基本可用命令库可以动态扩展,并根据用户的具体要求通过加载技术包TP(相应的技术 对象类型TO)。 因此,通用运动控制UMC的动态缩放是可能的。 由于一致的集成和通信平台API,极其准备的技术包TP的功能也可以集成到控件中。

    Semiconductor device and method
    6.
    发明授权
    Semiconductor device and method 失效
    半导体器件及方法

    公开(公告)号:US4994882A

    公开(公告)日:1991-02-19

    申请号:US309908

    申请日:1989-02-10

    IPC分类号: H01L29/76 H01L29/861

    CPC分类号: H01L29/7606 H01L29/8618

    摘要: A semiconductor heterostructure device is disclosed which includes a first semiconductor layer having a barrier layer disposed thereon, the barrier layer being formed of a semiconductor material having a wider bandgap than the material of the first semiconductor layer. A carrier transport layer is disposed on the barrier layer, the carrier transport layer being formed of a semiconductor material having a narrower bandgap than the material of the barrier layer. A contact layer is disposed on the carrier transport layer. A negative potential is applied to the contact layer with respect to the first semiconductor layer. In operation, for small voltages, under the indicated bias configuration, electrons supplied to the carrier transport layer by the source of negative potential supply will be blocked at the barrier presented by the larger bandgap barrier layer, and little current will flow. As the bias voltage is increased, these blocked electrons are under the influence ofThis invention was made with Government support, and the Government has certain rights in this invention.

    摘要翻译: 公开了一种半导体异质结构器件,其包括其上设置有阻挡层的第一半导体层,阻挡层由具有比第一半导体层的材料更宽的带隙的半导体材料形成。 载流子传输层设置在阻挡层上,载流子传输层由具有比阻挡层的材料窄的带隙的半导体材料形成。 接触层设置在载体传输层上。 相对于第一半导体层,对接触层施加负电位。 在操作中,对于小电压,在指定的偏压构造下,由负电位源供应到载流子传输层的电子将在由较大带隙势垒层呈现的屏障处被阻挡,并且很少的电流将流过。 随着偏置电压的增加,这些被阻塞的电子受到增加的电场的影响,这提高了电子能量。 在某些时候,这些“加热”电子将突然具有足够的能量穿过势垒并有助于较大的电流。 在这两种类型的电流之间可能发生转换,结果是S型电流 - 电压特性,可用于获得非常快的双态器件。