公开(公告)号：US5355424A

公开(公告)日：1994-10-11

申请号：US935885

申请日：1992-08-27

申请人： Wilfried Idler ,  Gert Laube ,  Michael Schilling ,  Klaus Wunstel ,  Dieter Baums ,  Olaf Hildebrand ,  Kaspar Dutting

发明人： Wilfried Idler ,  Gert Laube ,  Michael Schilling ,  Klaus Wunstel ,  Dieter Baums ,  Olaf Hildebrand ,  Kaspar Dutting

IPC分类号： G02B6/122 ,  G02B6/12 ,  H01S3/10 ,  H01S5/00 ,  H01S5/028 ,  H01S5/042 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/50

CPC分类号： G02B6/12004 ,  H01S5/06255 ,  H01S5/5045 ,  H01S5/028 ,  H01S5/06213 ,  H01S5/1003

摘要： A semiconductor device is operated as an optical filter. The semiconductor device has a substrate and a monolithically integrated branched waveguide structure disposed above the substrate, portions of the waveguide structure being divided into a plurality of regions by troughs, one of the regions being a branching region. Light is radiated into the waveguide structure at an end face of one of the regions and currents that are smaller than respective laser threshold currents of the regions flow through the regions, including the branching region, perpendicular to a propagation direction of light through the waveguide.

摘要翻译： 半导体器件作为滤光器工作。 半导体器件具有衬底和设置在衬底上的单片集成分支波导结构，波导结构的部分被槽分成多个区域，其中一个区域是分支区域。 光在一个区域的端面处被辐射到波导结构中，并且电流小于区域的相应激光阈值电流流过垂直于通过波导的光的传播方向的包括分支区域的区域。

公开(公告)号：US5995530A

公开(公告)日：1999-11-30

申请号：US762118

申请日：1996-12-09

申请人： Kaspar Dutting ,  Klaus Wunstel

发明人： Kaspar Dutting ,  Klaus Wunstel

IPC分类号： G01B9/02 ,  G02B6/122 ,  G02F2/00 ,  H01S3/082 ,  H01S5/00 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/10 ,  H01S3/085

CPC分类号： H01S5/10 ,  H01S5/06255 ,  H01S5/1032 ,  G02F2/00 ,  H01S5/026 ,  H01S5/1003

摘要： An interferometric semiconductor laser (YL) as well as optoelectronic arrangements with such a laser are disclosed. The laser has a special coupling segment (Z) which allows high optical output to be obtained without affecting the filtering function or significantly restricting the tuning range of the laser. Such a laser can be coupled with low loss to a subsequent optoelectronic component (e.g., a wavelength converter (WK)) which is monolithically integrated with the laser.

摘要翻译： 公开了一种干涉式半导体激光器（YL）以及具有这种激光器的光电子装置。 激光器具有特殊的耦合段（Z），可以获得高光输出，而不会影响滤波功能或显着限制激光器的调谐范围。 这样的激光器可以以与激光器单片集成的后续光电子部件（例如，波长转换器（WK））的低损耗耦合。

公开(公告)号：US5313478A

公开(公告)日：1994-05-17

申请号：US884341

申请日：1992-05-18

申请人： Dieter Baums ,  Kaspar Dutting ,  Olaf Hildebrand ,  Wilfried Idler ,  Gert Laube ,  Michael Schilling ,  Heinz Schweizer ,  Klaus Wunstel

发明人： Dieter Baums ,  Kaspar Dutting ,  Olaf Hildebrand ,  Wilfried Idler ,  Gert Laube ,  Michael Schilling ,  Heinz Schweizer ,  Klaus Wunstel

IPC分类号： H01S3/098 ,  H01S5/00 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/068 ,  H01S5/10 ,  H01S3/10

CPC分类号： H01S5/065 ,  H01S5/0625 ,  H01S5/06 ,  H01S5/06213 ,  H01S5/10 ,  H01S5/1003

摘要： A semiconductor laser that is monolithically integrated on a substrate and whose cavity has a branched structure that is simply contiguous in a topological sense, and which includes a plurality of regions that enclose the cavity, is operated as a mode-locked semiconductor laser, with an alternating current flowing through at least one region in addition to a direct current. The frequency of the alternating current is related to the reciprocal of the round-trip time or an integral multiple of this reciprocal of light pulses generated by the alternating current in the semiconductor laser.

摘要翻译： 单片集成在基板上的半导体激光器，其腔体具有在拓扑学意义上简单连续的分支结构，并且包括多个包围空腔的区域，作为锁模半导体激光器工作，其中 除了直流电流之外，流过至少一个区域的交流电流。 交流电流的频率与往返时间的倒数相关，或与半导体激光器中的交流电产生的光脉冲的倒数的整数倍有关。

公开(公告)号：US5101414A

公开(公告)日：1992-03-31

申请号：US596938

申请日：1990-10-15

申请人： Michael Schilling ,  Klaus Wunstel ,  Kaspar Dutting ,  Heinz Schweizer

发明人： Michael Schilling ,  Klaus Wunstel ,  Kaspar Dutting ,  Heinz Schweizer

IPC分类号： H01S5/00 ,  H01S3/0933 ,  H01S5/062 ,  H01S5/10 ,  H01S5/12 ,  H01S5/227

CPC分类号： H01S5/06206 ,  H01S3/0933 ,  H01S5/227 ,  H01S5/1003 ,  H01S5/12 ,  H01S5/2275

摘要： A semiconductor laser in which the photons injected from its waveguide region into the laser active region are those whose energies differ from the energy sum of the chemical potential of the electron-hole pairs and the energy of the longitudinal acoustic phonons by less than one-half the thermal energy is described. A current directed into the photon emission region in the area of the Bragg grating causes photons of this energy to be injected into the laser active region which is constituted of a layer of indium gallium arsenide phosphide.

摘要翻译： 其中从其波导区域注入到激光器有源区域中的光子的能量不同于电子 - 空穴对的化学势的能量和能量与纵向声学声子的能量之差的半导体激光器不到一半 描述了热能。 引导到布拉格光栅区域中的光子发射区域的电流使得该能量的光子被注入到由砷化铟镓磷化物层构成的激光有源区域中。

公开(公告)号：US5319667A

公开(公告)日：1994-06-07

申请号：US35918

申请日：1993-03-22

申请人： Kaspar Dutting ,  Olaf Hildebrand ,  Dieter Baums ,  Wilfried Idler ,  Michael Schilling ,  Klaus Wunstel

发明人： Kaspar Dutting ,  Olaf Hildebrand ,  Dieter Baums ,  Wilfried Idler ,  Michael Schilling ,  Klaus Wunstel

IPC分类号： H01S5/00 ,  H01S5/0625 ,  H01S5/10 ,  H01S3/082

CPC分类号： H01S5/10 ,  H01S5/06255 ,  H01S5/1003 ,  H01S5/1032

摘要： An interferometric semiconductor laser includes a cavity in the form of a Y and at east three individually actuatable active segments. A central segment couples together the individually actuatable active segments. The central segment is an active or passive segment that acts as a beam divider. The arrangement of the segments forms two resonator paths which contain at least one common active segment. At least one resonator path includes an active segment that does not belong to the other resonator path. In the absence of, or with the same actuation of the active segments, the optical path length of one resonator path differs from the optical path length of the other resonator path.

摘要翻译： 干涉式半导体激光器包括Y形式的空腔和东部三个可单独致动的活动段。 中央段将可单独致动的活动段连接在一起。 中心段是作为分束器的有源或无源段。 段的排列形成两个共振器路径，其包含至少一个共同的有效段。 至少一个谐振器路径包括不属于另一谐振器路径的有源段。 在不存在或者以相同的激活有源段的情况下，一个谐振器路径的光路长度与另一谐振器路径的光路长度不同。

公开(公告)号：US5889902A

公开(公告)日：1999-03-30

申请号：US800949

申请日：1997-02-14

申请人： Gert Laube ,  Michael Schilling ,  Klaus Wunstel ,  Wilfried Idler ,  Karin Grosskopf ,  Eugen Lach

发明人： Gert Laube ,  Michael Schilling ,  Klaus Wunstel ,  Wilfried Idler ,  Karin Grosskopf ,  Eugen Lach

IPC分类号： G02F1/017 ,  G02F1/313 ,  G02F2/00 ,  H01L27/15 ,  H01S3/10 ,  H01S5/026 ,  H01S5/227 ,  H01S5/34 ,  H01S5/40 ,  H01S5/50 ,  G02B6/12 ,  H01L21/70

CPC分类号： B82Y20/00 ,  G02F1/3138 ,  H01S5/5009 ,  G02F1/01708 ,  G02F2002/006 ,  H01S5/026 ,  H01S5/2272 ,  H01S5/3406 ,  H01S5/4068 ,  H01S5/509

摘要： An integrated optoelectronic semiconductor component is presented, which can equally process light signals of any polarization direction. Such semiconductor components are used for digital optical telecommunications. The semiconductor component has active (A) and passive (B) waveguide sections, which comprise a number of semiconductor layers (SP) with so-called multiple quantum well structures. The semiconductor layers (SP) are deposited by a process known as selective area growth (SAG). A portion of the semiconductor layers has a lattice constant which is smaller than the lattice constant of a substrate (SUB). This creates a biaxial tensile strain in these layers. The tensile strain is optimized in the active waveguide sections (A) to attain polarization independence. Furthermore a process is described whereby such a semiconductor component can be manufactured.

摘要翻译： 提出了一种集成的光电子半导体元件，可以同时处理任何偏振方向的光信号。 这种半导体元件用于数字光通信。 半导体部件具有有源（A）和无源（B）波导部分，其包括具有所谓的多量子阱结构的多个半导体层（SP）。 通过称为选择面积生长（SAG）的工艺沉积半导体层（SP）。 半导体层的一部分具有小于衬底（SUB）的晶格常数的晶格常数。 这在这些层中产生双轴拉伸应变。 在有源波导部分（A）中优化拉伸应变以获得极化独立性。 此外，描述了可以制造这样的半导体部件的工艺。

公开(公告)号：US5148439A

公开(公告)日：1992-09-15

申请号：US571994

申请日：1990-08-24

申请人： Klaus Wunstel ,  Reinold Weinmann

发明人： Klaus Wunstel ,  Reinold Weinmann

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/227

CPC分类号： H01S5/227 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2228 ,  H01S5/2275

摘要： In a semiconductor laser having a semi-insulating layer on the sides of a mesa to confine the current to the mesa during operation of the laser, at least one n-type layer and at least one p-type layer are provided above or below the semi-insulating layer.

公开(公告)号：US6005708A

公开(公告)日：1999-12-21

申请号：US57512

申请日：1998-04-09

申请人： Denis Leclerc ,  Leon Goldstein ,  Jean-Yves Emery ,  Beatrice Dagens ,  Christopher Janz ,  Michael Schilling ,  Klaus Wunstel

发明人： Denis Leclerc ,  Leon Goldstein ,  Jean-Yves Emery ,  Beatrice Dagens ,  Christopher Janz ,  Michael Schilling ,  Klaus Wunstel

IPC分类号： G02B6/12 ,  G02F2/00 ,  G02F2/02 ,  H04B10/17 ,  G02F1/39

CPC分类号： H04B10/2914 ,  G02F2/004 ,  G02F2001/212 ,  G02F2001/215 ,  G02F2002/006

摘要： The invention relates to wavelength converters for optical signals, as used in telecommunications, in particular for routing signals. The invention relates in particular to a wavelength converter including an interferometer structure for delivering an output optical signal, in which converter first and second branches, including at least one first semiconductor optical amplifier, are coupled to input peripheral semiconductor optical amplifiers and/or to an output peripheral semiconductor optical amplifier, wherein the structure of the active waveguide of at least one peripheral amplifier is so designed that it has a ratio of active area to confinement factor greater than that of the active waveguide of said first amplifier.

摘要翻译： 本发明涉及用于光通信中的光信号的波长转换器，特别是用于路由信号。 本发明具体涉及包括用于传送输出光信号的干涉仪结构的波长转换器，其中包括至少一个第一半导体光放大器的转换器第一和第二分支耦合到输入外围半导体光放大器和/或 输出外围半导体光放大器，其中至少一个外围放大器的有源波导的结构被设计成使得其有效面积与约束因子的比率大于所述第一放大器的有源波导的比率。

公开(公告)号：US20070197165A1

公开(公告)日：2007-08-23

申请号：US11636984

申请日：2006-12-12

申请人： Ralf Klotsche ,  Klaus Wunstel ,  Thomas-Rolf Banniza

发明人： Ralf Klotsche ,  Klaus Wunstel ,  Thomas-Rolf Banniza

IPC分类号： H04B1/00

CPC分类号： H04B7/01 ,  H04W56/0035

摘要： A Doppler compensation method is used for radio transmission between a mobile body possibly but not exclusively a train and some base station, both mobile body and base station comprise respectively a transceiver connected to an antenna for the radio transmission. The method comprises the step of determining the direction of motion of the mobile body with respect to the active base station i.e. the base station to which a radio transmission link is just built. The method is then followed by the step to apply a constant Doppler compensation corresponding to the cancellation of the Doppler effect for a mobile body moving in the same direction at predefined limiting speed of motion (vlimit) at which a quality threshold is reached with the used radio transmission technology in the case without a Doppler compensation.

摘要翻译： 多普勒补偿方法用于移动体之间的无线电传输，可能但不排除列车和一些基站，移动体和基站分别包括连接到无线电传输天线的收发机。 该方法包括以下步骤：确定移动体相对于有源基站（即正在构建无线电传输链路的基站）的运动方向。 该方法之后是步骤，以预定的极限运动速度（v>极限）在相同方向上移动对应于多普勒效应消除的常数多普勒补偿（v> 在没有多普勒补偿的情况下，使用无线电传输技术达到了质量阈值。

公开(公告)号：US5325387A

公开(公告)日：1994-06-28

申请号：US980958

申请日：1992-11-24

申请人： Dieter Baums ,  Michael Schilling ,  Wilfried Idler ,  Gert Laube ,  Klaus Wunstel ,  Olaf Hildebrand

发明人： Dieter Baums ,  Michael Schilling ,  Wilfried Idler ,  Gert Laube ,  Klaus Wunstel ,  Olaf Hildebrand

IPC分类号： H01S5/00 ,  G02F3/02 ,  H01S3/106 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/40 ,  H01S3/10

CPC分类号： H01S3/1061 ,  G02F3/026 ,  H01S5/06255 ,  H01S5/1003 ,  H01S5/4031

摘要： A semiconductor laser is provided monolithically integrated on a substrate and has a cavity layer extending above a plane that is coplanar with a base surface of the substrate, is branched and includes a plurality of separately controllable regions. The laser is operated by changing charge carrier density in at least one of the regions so that it emits light at one of a first wavelength and a second wavelength in correspondence with the charge carrier density change.

摘要翻译： 半导体激光器单片集成在基板上，并且具有在与基板的基面共面的平面上方延伸的空腔层，其分支并且包括多个可单独控制的区域。 通过在至少一个区域中改变电荷载流子密度来操作激光器，使得其与电荷载流子密度变化相对应地以第一波长和第二波长中的一个发射光。