PHOTOACID GENERATOR AND PHOTOREACTIVE COMPOSITION

    公开(公告)号:US20100233621A1

    公开(公告)日:2010-09-16

    申请号:US12741325

    申请日:2008-10-30

    IPC分类号: C07D409/12 G03C1/00

    摘要: An object of the present invention is to provide photoacid generator, which shows very high sensitivity in the near ultraviolet range of about 300 to 400 nm, and also can remarkably increase a reaction rate of a photoreactive composition using the same, and to provide a photoreactive composition which can initiate the reaction even by irradiation with near ultraviolet light within a short time and also can obtain a desired reaction product. More particularly, the present invention provides a dithienyl sulfide disulfonium salt represented by the formula (A1): wherein R1a to R4a each independently represents an optionally substituted monocyclic carbon ring group, an optionally substituted condensed polycyclic carbon ring group or an optionally substituted monocyclic heterocyclic group, and X− represents an inorganic acid ion or an organic acid ion; a photoacid generator containing the dithienyl sulfide disulfonium salt, and a photoreactive composition containing the photoacid generator and an acid reactive compound; a dithienyl sulfide sulfonium salt represented by the formula (B1): wherein R1b and R2b each independently represents an optionally substituted monocyclic carbon ring group, an optionally substituted condensed polycyclic carbon ring group or an optionally substituted monocyclic heterocyclic group, R3b to R5b each independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, an acyl group or a hydroxyl group, and X− represents an inorganic acid ion or an organic acid ion, a photoacid generator containing the same, and a photoreactive composition containing the photoacid generator; and a phenylthiothiophene sulfonium salt represented by the formula (C1): wherein R1c and R2c each independently represents an optionally substituted monocyclic carbon ring group, an optionally substituted condensed polycyclic carbon ring group or an optionally substituted monocyclic heterocyclic group, and R3c to R7c each independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, alkoxy group having 1 to 4 carbon atoms, an acyl group or a hydroxyl group, and X− represents an inorganic acid ion or an organic acid ion, a photoacid generator containing the same, and a photoreactive composition containing the photoacid generator and an acid reactive compound.

    Photoacid generator and photoreactive composition
    2.
    发明授权
    Photoacid generator and photoreactive composition 有权
    光酸发生剂和光反应性组合物

    公开(公告)号:US08216768B2

    公开(公告)日:2012-07-10

    申请号:US12741325

    申请日:2008-10-30

    摘要: A photoacid generator, which shows very high sensitivity in the near ultraviolet range of about 300 to 400 nm, and also can remarkably increase a reaction rate of a photoreactive composition using the same, and a photoreactive composition which can initiate the reaction even by irradiation with near ultraviolet light within a short time and also can obtain a desired reaction product. A dithienyl sulfide disulfonium salt represented by the formula (A1): a dithienyl sulfide sulfonium salt represented by the formula (B1): and a phenylthiothiophene sulfonium salt represented by the formula (C1):

    摘要翻译: 在约300〜400nm的近紫外线范围内显示出非常高的灵敏度的光致酸产生剂,并且还可以显着提高使用其的光反应性组合物的反应速率,以及即使通过照射也能引发反应的光反应性组合物 在短时间内接近紫外线,并且还可以获得所需的反应产物。 由式(A1)表示的二噻吩硫醚二锍盐:由式(B1)表示的二噻吩基硫锍盐和由式(C1)表示的苯硫噻吩锍盐:

    POWER SOURCE DEVICE
    3.
    发明申请
    POWER SOURCE DEVICE 有权
    电源设备

    公开(公告)号:US20130051097A1

    公开(公告)日:2013-02-28

    申请号:US13593873

    申请日:2012-08-24

    IPC分类号: H02M7/04

    CPC分类号: H02M7/17 H02M7/1626

    摘要: A power source device for rectifying the output of an AC generator in which magneto coils are in a star-shaped connection in three phases. The device includes a control rectifier circuit configured from a first control rectifier circuit for performing full-wave rectification on three-phase AC voltages, and a second control rectifier circuit for performing full-wave rectification on AC voltages obtained between neutral and each of two-phase AC output terminals selected from the three-phase AC output terminals of the generator, as well as on AC voltage obtained between the selected two-phase AC output terminals; and a controller controlling the first and second circuits so that the output of the first circuit is supplied to the load when the rotational speed of the generator is equal/less than a set speed, and the output of the second circuit is supplied to the load when the rotational speed exceeds the set speed.

    摘要翻译: 一种用于整流其中发电机线圈处于星形连接中的三相发电机的输出的电源装置。 该装置包括由用于在三相AC电压上进行全波整流的第一控制整流电路配置的控制整流电路,以及用于在中性线和二线电压之间获得的交流电压进行全波整流的第二控制整流电路, 从发电机的三相交流输出端子选择的三相交流输出端子,以及所选择的两相交流输出端子之间获得的交流电压; 以及控制器,其控制第一和第二电路,使得当发电机的转速等于/小于设定速度时,第一电路的输出被提供给负载,并且第二电路的输出被提供给负载 当转速超过设定速度时。

    BNT-BKT-BT piezoelectric composition, element and methods of manufacturing
    4.
    发明授权
    BNT-BKT-BT piezoelectric composition, element and methods of manufacturing 有权
    BNT-BKT-BT压电组合物,元素及制造方法

    公开(公告)号:US08269402B2

    公开(公告)日:2012-09-18

    申请号:US12618925

    申请日:2009-11-16

    IPC分类号: H01L41/187

    摘要: Piezoelectric/electrostrictive ceramics having the composition represented by the general formula: xBNT-yBKT-zBT (x+y+z=1) are provided, wherein at least one kind among A-site elements are allowed to become deficient from stoichiometry in which a point (x, y, z) representing content ratios x, y and z of (Bi1/2Na1/2)TiO3, (Bi1/2K1/2)TiO3 and BaTiO3 is within a range including a border line of a quadrangle ABCD with a point A, a point B, a point C and a point D as vertices in a ternary phase diagram. Vacancies are formed in an A-site of a perovskite structure by allowing the A-site elements to become deficient from stoichiometry. An amount of A-site vacancies becomes at least 2 mol % to at most 6 mol %.

    摘要翻译: 提供具有由通式xBNT-yBKT-zBT(x + y + z = 1)表示的组成的压电/电致伸缩陶瓷,其中A位元素中的至少一种因化学计量而变得不足,其中a (Bi1 / 2Na1 / 2)TiO3,(Bi1 / 2K1 / 2)TiO3和BaTiO3的含量比x,y和z的点(x,y,z)在包括四边形ABCD的边界线 点A,点B,点C和点D作为三元相位图中的顶点。 通过使A位元素从化学计量学上变得缺陷,在钙钛矿结构的A位形成空位。 A位空位量变为至少2mol%至至多6mol%。

    Processing System and Method for Operating the Same
    7.
    发明申请
    Processing System and Method for Operating the Same 有权
    处理系统及其操作方法

    公开(公告)号:US20090226294A1

    公开(公告)日:2009-09-10

    申请号:US12083015

    申请日:2006-10-06

    摘要: An operating method is disclosed for a processing system that comprises multiple process modules each adapted to perform substantially the same process upon a substrate. During process module conditioning as a preparatory step for executing a required process recipe, each time one process module completes conditioning, successive transfer of unprocessed substrates from a cassette to the process module is started on an associated substrate transfer route, and successive processes that use the process module are started for the unprocessed substrates. The processing system can be operated efficiently, even if the nonuniformity of the conditioning time required exists between process modules of the same specifications.

    摘要翻译: 公开了一种用于处理系统的操作方法,该处理系统包括多个处理模块,每个处理模块适于在基板上执行基本相同的处理。 在处理模块调节期间,作为执行所需过程配方的准备步骤,每当一个处理模块完成调理时,在相关联的基板传送路线上开始将未处理的基板从盒子连续传送到处理模块,并且使用 为未处理的基板开始处理模块。 即使在相同规范的处理模块之间存在调节时间的不均匀性,也能够有效地操作处理系统。

    FILM POSITION ADJUSTING METHOD, MEMORY MEDIUM AND SUBSTRATE PROCESSING SYSTEM
    8.
    发明申请
    FILM POSITION ADJUSTING METHOD, MEMORY MEDIUM AND SUBSTRATE PROCESSING SYSTEM 有权
    电影位置调整方法,记忆媒体和基板处理系统

    公开(公告)号:US20090087542A1

    公开(公告)日:2009-04-02

    申请号:US12298570

    申请日:2007-04-26

    IPC分类号: C23C16/52

    摘要: A substrate processing system includes a processing chamber 12, and an orienter 16 centering a wafer W. The orienter 16 is provided with an orienter sensor 42 measuring a central position discrepancy of the wafer W, and an image sensor 41 measuring a width of a non-film forming portion at circumferential portions of the wafer W. After a film deposition processing in the processing chamber 12, the wafer W is loaded into the orienter 16 where a central position discrepancy of the wafer W is measured, and the wafer W is then centered. Further, the width of the non-film forming portion of the wafer W is measured, and a film position discrepancy is calculated based on the width of the non-film forming portion. To correct the calculated film position discrepancy, a target transfer position of the wafer W on a mounting table 13 in the processing chamber 12 is adjusted.

    摘要翻译: 基板处理系统包括处理室12和定向晶片W定向器16.定向器16设置有测量晶片W的中心位置偏差的定向传感器42和测量晶片W的宽度的图像传感器41, 在晶片W的圆周部分处形成膜。在处理室12中进行成膜处理之后,将晶片W装载到定向器16中,其中测量晶片W的中心位置差异,然后晶片W 居中 此外,测量晶片W的非成膜部分的宽度,并且基于非成膜部分的宽度计算膜位置差异。 为了校正计算出的胶片位置偏差,调整处理室12中的安装台13上的晶片W的目标转印位置。

    Piezoelectric/electrostrictive device and method for manufacturing the same
    9.
    发明授权
    Piezoelectric/electrostrictive device and method for manufacturing the same 失效
    压电/电致伸缩器件及其制造方法

    公开(公告)号:US07441317B2

    公开(公告)日:2008-10-28

    申请号:US11273828

    申请日:2005-11-15

    IPC分类号: H01L41/22 H01L41/187

    摘要: A piezoelectric/electrostrictive device is provided, including a substrate, an electrode layer adhering to the surface of the substrate, and a piezoelectric/electrostrictive layer adhering to the electrode layer. The electrode layer is deformed by high-temperature creep. A method for manufacturing the piezoelectric/electrostrictive device is provided including a step of cooling the piezoelectric/electrostrictive device, after firing, at a temperature decreasing rate of at least the rate of natural cooling. The cooling step includes a sub-step of holding the piezoelectric/electrostrictive device at a constant holding temperature that is lower than the firing temperature. The holding temperature is within a range of temperatures at which high-temperature creep occurs in the metal of the electrode layer so that residual stress in the piezoelectric/electrostrictive layer can be reduced.

    摘要翻译: 提供一种压电/电致伸缩器件,包括基片,附着于基片表面的电极层,以及附着在电极层上的压电/电致伸缩层。 电极层由高温蠕变变形。 提供一种压电/电致伸缩器件的制造方法,其特征在于,以至少自然冷却速度的降温速度,在烧成后对压电/电致伸缩器件进行冷却的工序。 冷却步骤包括将压电/电致伸缩装置保持在低于烧制温度的恒定保持温度的子步骤。 保持温度在电极层的金属中发生高温蠕变的温度的范围内,能够降低压电/电致伸缩层的残留应力。

    Piezoelectric/electrostrictive device
    10.
    发明授权
    Piezoelectric/electrostrictive device 失效
    压电/电致伸缩器件

    公开(公告)号:US07221075B2

    公开(公告)日:2007-05-22

    申请号:US11281645

    申请日:2005-11-17

    IPC分类号: B41J2/45

    CPC分类号: H01L41/098 H01L41/187

    摘要: A piezoelectric/electrostrictive device includes: a ceramic substrate having a thick portion and a thin diaphragm portion; and a piezoelectric/electrostrictive element having a layered structure including a lower electrode, a piezoelectric/electrostrictive film, and an upper electrode, and the thin diaphragm portion of the ceramic substrate is constituted to vibrate in conjunction with the driving of the piezoelectric/electrostrictive element. Furthermore, shape and dimension relations defined in the following (A) to (C) are satisfied: (A) a shape of the thin diaphragm portion 12 is an outward protruding arch shape, and an outward protrusion height of the arch shape is in a range of 5 to 50 μm; (B) a mounting width of the thin diaphragm portion is in a range of 600 to 2000 μm; and (C) a ratio (height/width) of the height to the width of the thick portion is in a range of 0.25 to 3. According to the piezoelectric/electrostrictive device, vibration of a thin diaphragm portion is effectively prevented from being damped, and the device maintains displacement (amplitude) to be high and is superior in response and highprecision (highresolution, high-sensitivity) detection is possible.

    摘要翻译: 压电/电致伸缩器件包括:具有厚壁部分和薄膜部分的陶瓷基片; 以及具有包括下电极,压电/电致伸缩膜和上电极的层状结构的压电/电致伸缩元件,并且陶瓷基板的薄膜部分被构造成与压电/电致伸缩元件的驱动相结合而振动 。 此外,满足以下(A)〜(C)中定义的形状和尺寸关系:(A)薄膜部12的形状为向外突出的拱形,拱形的向外突出高度为 范围5至50 mum; (B)薄膜部分的安装宽度在600〜2000μm的范围内; 和(C)高度与厚部的宽度的比(高/宽)在0.25〜3的范围内。根据压电/电致伸缩装置,能够有效地防止薄膜部的振动被阻尼 ,并且器件将位移(振幅)保持为高并且响应高且精度高(高分辨率,高灵敏度)检测是可能的。