摘要:
A vacuum evacuation device 2 of the invention comprises a vacuum pump 4,5 for exhausting a gas G2 in a process chamber 21 into which a process gas G1 is introduced and in which a process reaction is performed, to form a vacuum in said process chamber 21; and a control means 6 for performing a first control that regulates the rotational speed of said vacuum pump 4,5 such that a pressure condition in said process chamber 21 reaches a pressure condition suitable for said process reaction during said process reaction, wherein said control means 6 calculates a specified rotational speed for said vacuum pump 4,5 based on process information related to said process reaction, and performs a second control that brings said vacuum pump 4,5 to said specified rotational speed before said first control. The vacuum evacuation device 2 is capable of bringing the pressure in a process chamber 21 to the target pressure in a short period without a vacuum pump 4,5 being overloaded, regardless of the process reaction condition.
摘要:
The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.
摘要:
Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.
摘要:
The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.
摘要:
Two rotors 18a, 18b each housing a honeycomb structure 25 carrying an absorbent is driven for rotation by a common motor 19. Partitioning members 17 define an absorbing zone S and a recovery zone U in the rotor depending on the angular positional relationship between the partitioning members 17 and the rotor corresponding thereto. In the absorbing zone S, the absorbent removes moisture and organic matters from air passing therethrough. In the recovery zone U, recovery of the absorbent deteriorated by absorbing the moisture and the organic matters is preformed by using heated dry air. Air sucked from a transfer space 10 of the processing system sequentially passes through the absorbing zones of both the rotors via a circulation passage 20, thereafter returned to the transfer space. A part of clean dry air having passed through the absorbing zones of both the rotors is supplied into an exhaust passage 21, and is heated by a heater, and passes through the recovery zones of both the rotors.
摘要:
Two rotors 18a, 18b each housing a honeycomb structure 25 carrying an absorbent is driven for rotation by a common motor 19. Partitioning members 17 define an absorbing zone S and a recovery zone U in the rotor depending on the angular positional relationship between the partitioning members 17 and the rotor corresponding thereto. In the absorbing zone S, the absorbent removes moisture and organic matters from air passing therethrough. In the recovery zone U, recovery of the absorbent deteriorated by absorbing the moisture and the organic matters is preformed by using heated dry air. Air sucked from a transfer space 10 of the processing system sequentially passes through the absorbing zones of both the rotors via a circulation passage 20, thereafter returned to the transfer space. A part of clean dry air having passed through the absorbing zones of both the rotors is supplied into an exhaust passage 21, and is heated by a heater, and passes through the recovery zones of both the rotors.
摘要:
Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.
摘要:
Substrates having surfaces in a highly clean condition are subjected to a thermal process in a heating furnace. In a thermal processing apparatus for processing substrates by a predetermined thermal process that heats the substrates by a heating means, the substrates are held in a vertical position at horizontal intervals in a reaction vessel. Cleaning liquids are supplied into the reaction vessel to clean the substrates, and then the cleaning liquids are drained away through a drain port, and then a process gas is supplied into the reaction vessel to process the substrates by a thermal process. The substrates having the cleaned clean surfaces are subjected to the thermal process without being exposed to the ambient atmosphere and can be satisfactorily processed by the thermal process.
摘要:
A vertical heat-treatment apparatus is provided with a mechanism for automatically transferring semiconductor wafers from carriers to a boat for a vertical type furnace. The automatic transferring mechanism comprises a port for receiving a plurality of carriers arranged in series in an upright state, a posture change mechanism for changing the posture of wafers in the carriers from the upright state to the horizontal state, a parallel transfer mechanism for transferring the carriers on the boat to the posture change mechanism, a carrier loading/unloading mechanism for loading the carriers on a station, a wafer loading/unloading mechanism for taking out the wafers from the carriers on the station in turn and transferring the taken-out wafers to the boat in turn, and a mounting mechanism for mounting the boat in the furnace. The carrier loading/unloading mechanism and the wafer loading/unloading mechanism are mounted on a common frame and are rotated and lifted at the same time.
摘要:
A treatment apparatus comprises a treatment chamber for performing a treatment for a workpiece W, a loading chamber connected to the treatment chamber, for loading and unloading a holding member which contains the workpiece into and from the treatment chamber, and an input/output chamber for inputting and outputting the workpiece to and from the loading chamber. The input/output chamber includes a cassette accommodating vessel port which holds a cassette accommodating vessel. The vessel is filled with clean air or an inert gas, and is airtightly closed. A cassette receiving mechanism is disposed below the port and lowers only the cassette of the vessel so as to receive the cassette. Thus, when the cassette is input and output to and from the outside of the treatment apparatus, the workpiece contained within the cassette is not exposed to the atmosphere in a working region. Consequently, it is not necessary to improve the cleanliness level of the atmosphere in the working region. As a result, the construction cost of the clean room and the operation cost thereof can be reduced. A clean air blowing device is disposed below the port. The clean air blowing device blows a side flow of clean air. Thus, the atmosphere at a position below the port where air tends to stay is circulated. Thus, since the surface of the workpiece loaded in the treatment chamber is exposed to the side flow, particles and the like that adhere thereto are purged.