Magnetic storage/read system with read head including magnetoresistive
element
    5.
    发明授权
    Magnetic storage/read system with read head including magnetoresistive element 失效
    具有读磁头的磁存储/读取系统,包括磁阻元件

    公开(公告)号:US5933297A

    公开(公告)日:1999-08-03

    申请号:US45189

    申请日:1993-04-13

    摘要: A magnetic storage/read system includes a recording medium for magnetically storing a signal and a magnetoresistive element which is driven relative to the recording medium. The magnetoresistive element may include a substrate, a first antiferromagnetic film, a first ferromagnetic film, a first nonmagnetic film, a soft magnetic film, a second nonmagnetic film, a second ferromagnetic film, and a second antiferromagnetic film, wherein the films are sequentially layered directly on the substrate with no intervening layer between any of the films. At least one of the first antiferromagnetic film and the second antiferromagnetic film may be made of nickel oxide. The first ferromagnetic film and the second ferromagnetic film have a first magnetization which is fixed in a predetermined direction, and the soft magnetic film has a second magnetization which is rotatable in response to a magnetic field from the recording medium such that an angle between a direction of the second magnetization and the predetermined direction in which the first magnetization is fixed varies in response to the magnetic field from the recording medium, thereby producing a magnetoresistive effect.

    摘要翻译: 磁存储/读取系统包括用于磁存储信号的记录介质和相对于记录介质驱动的磁阻元件。 磁阻元件可以包括基板,第一反铁磁膜,第一铁磁膜,第一非磁性膜,软磁膜,第二非磁性膜,第二铁磁膜和第二反铁磁膜,其中膜依次层叠 直接在衬底上,在任何膜之间没有中间层。 第一反铁磁膜和第二反铁磁膜中的至少一个可以由氧化镍制成。 第一铁磁膜和第二铁磁膜具有沿预定方向固定的第一磁化,并且软磁膜具有可响应于来自记录介质的磁场而旋转的第二磁化,使得在方向 第二磁化和第一磁化固定的预定方向响应于来自记录介质的磁场而变化,由此产生磁阻效应。

    Thin film magnetic head having magnetic film of Co-Ni-Fe alloy
    6.
    发明授权
    Thin film magnetic head having magnetic film of Co-Ni-Fe alloy 失效
    具有Co-Ni-Fe合金磁膜的薄膜磁头

    公开(公告)号:US4780781A

    公开(公告)日:1988-10-25

    申请号:US779469

    申请日:1985-09-24

    CPC分类号: G11B5/31

    摘要: A thin film magnetic head comprising a lower magnetic film, an upper magnetic film which is formed over the lower magnetic film and in which one end is come into contact with one end of the lower magnetic film and the other end faces the other end of the lower magnetic film through a magnetic gap and thereby forming a magnetic circuit which has a magnetic gap in a part thereof, together with the lower magnetic film, and a conductor coil forming a coil of a predetermined number of turns and passing between the upper and lower magnetic films and crossing the magnetic circuit. Each of the upper and lower magnetic films is formed of a Co-Ni-Fe ternary alloy having a face-centered cubic crystal structure. Also, uniaxial anisotropy is alternately and perpendicularly given in every layer of a predetermined thickness stacked in the direction of thickness of the film.

    摘要翻译: 一种薄膜磁头,包括下部磁性膜,上部磁性膜,形成在下部磁性膜的上方,并且一端与下部磁性膜的一端接触,另一端面向下部磁性膜的另一端 通过磁隙下降磁性膜,从而形成与下部磁性膜一起形成有磁性间隙的磁路,以及形成规定圈数的线圈的导体线圈,并且通过上下 磁性膜并穿过磁路。 上下磁性膜由具有面心立方晶体结构的Co-Ni-Fe三元合金形成。 另外,在膜的厚度方向堆叠的规定厚度的各层中交替地,垂直地赋予单轴各向异性。

    Magnetic head including magnetoresistive element
    10.
    发明授权
    Magnetic head including magnetoresistive element 失效
    磁头包括磁阻元件

    公开(公告)号:US06249405B1

    公开(公告)日:2001-06-19

    申请号:US09588183

    申请日:2000-06-07

    IPC分类号: G11B539

    摘要: A magnetic storage/read system includes a recording medium having tracks, and a magnetic head, including a magnetoresistive element, which reads a magnetic field from the recording medium. The magnetic storage/read system satisfies a relationship of d≦(12.5×103)/Tr where d is a height, expressed in &mgr;m, of the magnetoresistive element in a direction perpendicular to a plane of the recording medium, and Tr is a track density, expressed in tracks per inch, of the tracks of the recording medium. The magnetoresistive element may include a first antiferromagnetic film; a first magnetic film having a magnetization direction which is fixed by magnetic coupling with the first antiferromagnetic film; a second antiferromagnetic film; a second magnetic film having a magnetization direction which is fixed by magnetic coupling with the second antiferromagnetic film; a third magnetic film having a magnetization direction which is able to rotate in response to an applied magnetic field; a first nonmagnetic conductive film disposed between the first magnetic film and the third magnetic film; and a second nonmagnetic conductive film disposed between the second magnetic film and the third magnetic film; wherein the third magnetic film is disposed between the first nonmagnetic conductive film and the second nonmagnetic conductive film, the first magnetic film is disposed between the first antiferromagnetic film and the first nonmagnetic conductive film, and the second magnetic film is disposed between the second antiferromagnetic film and the second nonmagnetic conductive film.

    摘要翻译: 磁存储/读取系统包括具有轨道的记录介质和包括磁阻元件的磁头,其从记录介质读取磁场。 磁存储/读取系统满足d <=(12.5×103)/ Tr的关系,其中d是在垂直于记录介质的平面的方向上的磁阻元件以mum表示的高度,Tr是轨道 密度,以每英寸的轨道表示的记录介质的轨道。 磁阻元件可以包括第一反铁磁膜; 具有通过与第一反铁磁膜的磁耦合固定的磁化方向的第一磁性膜; 第二反铁磁膜; 具有通过与第二反铁磁膜的磁耦合固定的磁化方向的第二磁性膜; 具有能够响应于所施加的磁场而能够旋转的磁化方向的第三磁性膜; 设置在第一磁性膜和第三磁性膜之间的第一非磁性导电膜; 以及设置在所述第二磁性膜和所述第三磁性膜之间的第二非磁性导电膜; 其中所述第三磁性膜设置在所述第一非磁性导电膜和所述第二非磁性导电膜之间,所述第一磁性膜设置在所述第一反铁磁性膜与所述第一非磁性导电膜之间,所述第二磁性膜设置在所述第二反铁磁性膜 和第二非磁性导电膜。