利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

25 条记录 (耗时 0.197 秒)

    LIGHT-EMITTING DEVICE
    3.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110140154A1

    公开(公告)日：2011-06-16

    申请号：US12953563

    申请日：2010-11-24

    申请人： Katsuyoshi NAKAYAMA ,  Kenji Imakita ,  Yasuko Osaki ,  Toshihisa Okada ,  Akihiro Hishinuma ,  Shiro Ohtaki

    发明人： Katsuyoshi NAKAYAMA ,  Kenji Imakita ,  Yasuko Osaki ,  Toshihisa Okada ,  Akihiro Hishinuma ,  Shiro Ohtaki

    IPC分类号： H01L33/58 ,  H01L33/62

    CPC分类号： H01L33/60 ,  H01L33/486 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2924/00014

    摘要： Provided is a light-emitting device provided with a light reflection layer which has a high light reflectivity and which is less susceptible to deterioration of the reflectivity due to corrosion, and having an improved light extraction efficiency.A light-emitting device comprising a substrate having a conductor layer formed on its surface and a light-emitting element disposed on the conductor layer, characterized in that an overcoat layer is formed between the conductor layer and the light-emitting element, and the overcoat layer is a borosilicate glass which comprises, as represented by mol % based on oxides, from 62 to 84% of SiO2, from 10 to 25% of B2O3, from 0 to 5% of Al2O3 and from 0 to 5% in total of at least one of Na2O and K2O, provided that the total content of SiO2 and Al2O3 is from 62 to 84%, and may contain from 0 to 10% of MgO and at least one of CaO, SrO and BaO in a total content of at most 5%.

    摘要翻译： 本发明提供一种具有光反射率高的光反射层的发光装置，其不易受腐蚀引起的反射率的劣化，并且具有提高的光提取效率。 一种发光器件，包括其表面上形成有导体层的基板和布置在所述导体层上的发光元件，其特征在于，在所述导体层和所述发光元件之间形成覆盖层，并且所述外涂层 层是硼硅酸盐玻璃，其以氧化物的摩尔％表示，SiO 2的62至84％，B 2 O 3的10至25％，Al 2 O 3的0至5％，以及0至5％ Na 2 O和K 2 O中的至少一种，条件是SiO 2和Al 2 O 3的总含量为62至84％，并且可以含有0至10％的MgO和至少一种CaO，SrO和BaO，总含量最多 5％。

    Light-emitting device
    4.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08604499B2

    公开(公告)日：2013-12-10

    申请号：US12953563

    申请日：2010-11-24

    申请人： Katsuyoshi Nakayama ,  Kenji Imakita ,  Yasuko Osaki ,  Toshihisa Okada ,  Akihiro Hishinuma ,  Shiro Ohtaki

    发明人： Katsuyoshi Nakayama ,  Kenji Imakita ,  Yasuko Osaki ,  Toshihisa Okada ,  Akihiro Hishinuma ,  Shiro Ohtaki

    IPC分类号： H01L33/00

    CPC分类号： H01L33/60 ,  H01L33/486 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2924/00014

    摘要： Provided is a light-emitting device provided with a light reflection layer which has a high light reflectivity and which is less susceptible to deterioration of the reflectivity due to corrosion, and having an improved light extraction efficiency.A light-emitting device comprising a substrate having a conductor layer formed on its surface and a light-emitting element disposed on the conductor layer, characterized in that an overcoat layer is formed between the conductor layer and the light-emitting element, and the overcoat layer is a borosilicate glass which comprises, as represented by mol % based on oxides, from 62 to 84% of SiO2, from 10 to 25% of B2O3, from 0 to 5% of Al2O3 and from 0 to 5% in total of at least one of Na2O and K2O, provided that the total content of SiO2 and Al2O3 is from 62 to 84%, and may contain from 0 to 10% of MgO and at least one of CaO, SrO and BaO in a total content of at most 5%.

    摘要翻译： 本发明提供一种具有光反射率高的光反射层的发光装置，其不易受腐蚀引起的反射率的劣化，并且具有提高的光提取效率。 一种发光器件，包括其表面上形成有导体层的基板和布置在所述导体层上的发光元件，其特征在于，在所述导体层和所述发光元件之间形成覆盖层，并且所述外涂层 层是硼硅酸盐玻璃，其以氧化物的摩尔％表示，SiO 2的62至84％，B 2 O 3的10至25％，Al 2 O 3的0至5％，以及0至5％ Na 2 O和K 2 O中的至少一种，条件是SiO 2和Al 2 O 3的总含量为62至84％，并且可以含有0至10％的MgO和至少一种CaO，SrO和BaO，总含量最多 5％。

    Method for manufacturing a glass sheet having an uneven surface
    6.
    发明授权
    Method for manufacturing a glass sheet having an uneven surface 失效

    公开(公告)号：US06467309B1

    公开(公告)日：2002-10-22

    申请号：US09584512

    申请日：2000-05-31

    申请人： Akihiro Hishinuma ,  Toshiaki Hashimoto

    发明人： Akihiro Hishinuma ,  Toshiaki Hashimoto

    IPC分类号： C03B1300

    CPC分类号： C03C17/245 ,  C03B18/14 ,  C03B23/02 ,  C03B23/037 ,  C03B35/181 ,  C03B35/185 ,  C03B2201/01 ,  C03C17/002 ,  C03C17/2453

    摘要： A heat-resistant pipe is arranged so as to traverse below a glass ribbon in a float bath of molten tin, and bubbles emanate from the heat-resistant pipe, thereby making the bottom surface (which is in contact with the tin) uneven. Alternatively, the bottom surface is made uneven with a roller for lifting the glass ribbon out of the float bath into an annealing furnace. In addition to these operations for making the glass surface uneven, a film can be applied to the top face of the glass ribbon (i.e. the surface that is not in contact with the tin) by CVD, supplying a mixed gas of raw material from coaters. Thus, the invention makes it possible to manufacture a glass sheet having an uneven surface efficiently, using a technique for processing the surface of a glass sheet that is suitable for a production line for float glass.

    Method for producing silicon dioxide film which prevents escape of Si component to the environment
    8.
    发明授权
    Method for producing silicon dioxide film which prevents escape of Si component to the environment 失效
    制造二氧化硅膜的方法，其防止Si组分逸出到环境中

    公开(公告)号：US5326720A

    公开(公告)日：1994-07-05

    申请号：US861892

    申请日：1992-06-23

    申请人： Takuji Goda ,  Yasuto Sakai ,  Akihiro Hishinuma ,  Hideo Kawahara ,  Shigehito Deki

    发明人： Takuji Goda ,  Yasuto Sakai ,  Akihiro Hishinuma ,  Hideo Kawahara ,  Shigehito Deki

    IPC分类号： C03C17/25 ,  B05D1/18

    CPC分类号： C03C17/25 ,  C03C2217/213 ,  C03C2218/111 ,  Y10S148/101 ,  Y10S438/902

    摘要： A method for producing a silicon dioxide film by contacting a substrate such as glass with a treating liquid comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide to deposit a silicon dioxide film on the surface of the substrate, the method being characterized by providing a device for preventing an Si component from escaping from the treating liquid. According to the method, pollution of working environment and decrease in concentration of solution do not occur during the formation of silicon dioxide film.

    摘要翻译： PCT No.PCT / JP90 / 01380 Sec。 371日期：1992年6月23日 102（e）日期1992年6月23日PCT 1990年10月25日PCT PCT。 出版物WO92 / 07793 日期：1992年5月14日。一种通过使诸如玻璃的基板与包含用二氧化硅过饱和的氢硅氟酸溶液的处理液接触以在基板的表面上沉积二氧化硅膜来制造二氧化硅膜的方法， 其特征在于提供一种用于防止Si组分从处理液中逸出的装置。 根据该方法，在形成二氧化硅膜期间不会发生工作环境的污染和溶液浓度的降低。

    METHOD OF DETOXIFYING A HARMFUL COMPOUND
    9.
    发明申请
    METHOD OF DETOXIFYING A HARMFUL COMPOUND 审中-公开
    消除有害化合物的方法

    公开(公告)号：US20100286424A1

    公开(公告)日：2010-11-11

    申请号：US12679754

    申请日：2008-09-18

    申请人： Koichiro Nakamura ,  Akihiro Hishinuma

    发明人： Koichiro Nakamura ,  Akihiro Hishinuma

    IPC分类号： C07F9/90 ,  C07F9/72 ,  C07F9/00

    CPC分类号： C07H23/00 ,  A62D3/17 ,  A62D3/176 ,  A62D3/37 ,  A62D3/40 ,  A62D2101/24 ,  A62D2101/43 ,  B09B3/00 ,  B09B3/0083 ,  B09C1/06 ,  B09C1/08 ,  C02F1/30 ,  C02F1/70 ,  C02F11/004 ,  C02F2101/103 ,  C02F2101/20 ,  C07F9/72

    摘要： It is an object of the present invention to provide a beneficial method of detoxifying a harmful compound in order to detoxify the harmful compound containing arsenic etc. effectively.A method of detoxifying a harmful compound according to the present invention is characterized in that a harmful compound containing at least one element selected from the group comprising arsenic, antimony and selenium is detoxified by an exposure to light and/or a heating under the presence of a cobalt complex. In a preferred embodiment of the method of detoxifying a harmful compound according to the present invention, the method is characterized in that the harmful compound is detoxified by an alkylation of arsenic, antimony and selenium.

    摘要翻译： 本发明的目的是提供一种有害的化合物的有毒方法，以有效地对含砷的有害化合物进行解毒。 根据本发明的有害化合物的解毒方法的特征在于，含有选自砷，锑和硒中的至少一种元素的有害化合物通过暴露于光和/或加热在有 钴复合物。 在根据本发明的有害化合物的解毒方法的优选实施方案中，所述方法的特征在于所述有害化合物通过砷，锑和硒的烷基化而解毒。

    Photocatalyst containing metallic ultrafine particles and process for producing said photocatalyst
    10.
    发明授权
    Photocatalyst containing metallic ultrafine particles and process for producing said photocatalyst 失效
    含有金属超细颗粒的光催化剂和所述光催化剂的制备方法

    公开(公告)号：US07759281B2

    公开(公告)日：2010-07-20

    申请号：US11035971

    申请日：2005-01-18

    申请人： Masamichi Kezuka ,  Kiyoshi Miyashita ,  Ryohei Ogawa ,  Akihiro Hishinuma

    发明人： Masamichi Kezuka ,  Kiyoshi Miyashita ,  Ryohei Ogawa ,  Akihiro Hishinuma

    IPC分类号： B01J23/00

    CPC分类号： B01J21/063 ,  B01J23/40 ,  B01J23/42 ,  B01J35/0013 ,  B01J35/004 ,  B01J37/0211

    摘要： There is disclosed a photocatalyst which comprises a substrate having a photocatalytic function and metallic nanocolloid particles that are supported on the substrate by the use of a metallic nanocolloid liquid substantially free from a protective colloid formation agent. A highly active photocatalyst containing metallic ultrafine particles is provided by bringing a substrate such as fine particles having a photocatalytic function into contact with a metallic nanocolloid liquid which is substantially free from a protective colloid formation agent, and which has favorable dispersion stability even if containing metallic nanocolloid particles in a relatively high concentration. Accordingly the photocatalyst containing metallic ultrafine particles can be produced at a low cost without being restricted on the place of production.

    摘要翻译： 公开了一种光催化剂，其包含具有光催化功能的基材和金属纳米胶体颗粒，其通过使用基本上不含保护胶体形成剂的金属纳米胶体液体负载在基材上。 通过使具有光催化功能的微粒等基材与基本上不含保护胶体形成剂的金属纳米胶体液体接触，即使含有金属超微粒子也具有良好的分散稳定性，提供了含有金属超微粒子的高活性光催化剂 纳米胶体颗粒的浓度较高。 因此，可以以低成本制造含有金属超细颗粒的光催化剂，而不限于生产地。