公开(公告)号：US20060286819A1

公开(公告)日：2006-12-21

申请号：US11157533

申请日：2005-06-21

申请人： Sean Seutter ,  Kaushal Singh ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

发明人： Sean Seutter ,  Kaushal Singh ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/02 ,  C23C16/345 ,  C23C16/482 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

摘要翻译： 本发明的实施方案通常提供使用光激发沉积膜的方法。 光致激发可以用于在沉积之前处理衬底，在沉积期间处理衬底和/或气体，处理沉积膜或用于增强腔室清洁中的至少一种。 在一个实施例中，用于在衬底上沉积硅和含氮膜的方法包括加热设置在处理室中的衬底，产生约1至约10eV的能量束，将能量转移到衬底的表面 ; 使含氮化学物质流入处理室，使含有硅 - 氮的键的含硅化学物质流入处理室，并在衬底上沉积含硅和氮的膜。

公开(公告)号：US20060286820A1

公开(公告)日：2006-12-21

申请号：US11157567

申请日：2005-06-21

申请人： Kaushal Singh ,  Sean Seutter ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

发明人： Kaushal Singh ,  Sean Seutter ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/482 ,  C23C16/488 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

公开(公告)号：US20060286774A1

公开(公告)日：2006-12-21

申请号：US11425342

申请日：2006-06-20

申请人： Kaushal Singh ,  Sean Seutter

发明人： Kaushal Singh ,  Sean Seutter

IPC分类号： H01L21/20

CPC分类号： C23C16/308 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/482 ,  C23C16/488 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02277 ,  H01L21/02301 ,  H01L21/0231 ,  H01L21/02348 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3121 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

摘要翻译： 本发明的实施方案通常提供一种在光激发过程中使用UV源沉积膜或层的方法。 膜沉积在基底上，通常包含诸如硅（例如外延，晶体，微晶，多晶硅或非晶），氧化硅，氮化硅，氮氧化硅或其它含硅材料的材料。 光致激化过程可以在沉积过程之前，期间或之后使衬底和/或气体暴露于能量束或通量。 因此，光激发过程可以用于预处理或后处理衬底或材料，沉积含硅材料，并且增强室清洁过程。 通过UV光激发过程增强的方法的特征包括在沉积之前去除原生氧化物，从沉积膜去除挥发物，增加沉积膜的表面能，增加前体的激发能，减少沉积时间和降低沉积温度。

公开(公告)号：US09842949B2

公开(公告)日：2017-12-12

申请号：US13807631

申请日：2012-08-09

申请人： Mehrdad M. Moslehi ,  Pawan Kapur ,  K.-Josef Kramer ,  Virendra V. Rana ,  Sean Seutter ,  Anand Deshpande ,  Anthony Calcaterra ,  Gerry Olsen ,  Kamran Manteghi ,  Thom Stalcup ,  George D. Kamian ,  David Xuan-Qi Wang ,  Yen-Sheng Su ,  Michael Wingert

发明人： Mehrdad M. Moslehi ,  Pawan Kapur ,  K.-Josef Kramer ,  Virendra V. Rana ,  Sean Seutter ,  Anand Deshpande ,  Anthony Calcaterra ,  Gerry Olsen ,  Kamran Manteghi ,  Thom Stalcup ,  George D. Kamian ,  David Xuan-Qi Wang ,  Yen-Sheng Su ,  Michael Wingert

IPC分类号： H01L31/0224 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/05 ,  H01L31/049

CPC分类号： H01L31/022441 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02327 ,  H01L31/03765 ,  H01L31/0392 ,  H01L31/049 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/075 ,  H01L31/1812 ,  H01L31/1896 ,  Y02E10/547

摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

公开(公告)号：US08962380B2

公开(公告)日：2015-02-24

申请号：US13057104

申请日：2010-12-09

申请人： Mehrdad M Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean Seutter ,  Virenda V Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

发明人： Mehrdad M Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean Seutter ,  Virenda V Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/0236

CPC分类号： H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

摘要翻译： 提供背接触式太阳能电池及制造方法。 背接触背面太阳能电池包括具有钝化层的光捕获前侧表面的衬底，掺杂的基极区域和具有极性与掺杂基极区域相反的掺杂背侧发射极区域。 背面钝化层和发射体上的图案化反射层形成光阱背面反射镜。 交叉的金属化图案位于太阳能电池的背面，并且永久性增强材料为电池提供支撑。

公开(公告)号：US20070082507A1

公开(公告)日：2007-04-12

申请号：US11245373

申请日：2005-10-06

申请人： R. Iyer ,  Jacob Smith ,  Sean Seutter ,  Kangzhan Zhang ,  Alexander Tam ,  Kevin Cunningham ,  Phani Ramachandran

发明人： R. Iyer ,  Jacob Smith ,  Sean Seutter ,  Kangzhan Zhang ,  Alexander Tam ,  Kevin Cunningham ,  Phani Ramachandran

IPC分类号： H01L21/00

CPC分类号： C23C16/45565 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/4557

摘要： A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.

摘要翻译： 公开了一种用于低温沉积掺杂氮化硅膜的方法和装置。 这些改进包括用于CVD室的机械设计，其提供用于低温处理的均匀热分布和工艺化学品的均匀分布，以及用于通过加热衬底在衬底上沉积包含硅和氮的至少一层的方法，使含硅 前体进入具有由适配环和一个或多个阻断板限定的混合区域的处理室，以及加热接合环和排气系统的一部分，排出氢，锗，硼或碳的一部分的排气系统 并且可选地将含氮前体流入处理室。

公开(公告)号：US20050164487A1

公开(公告)日：2005-07-28

申请号：US11088072

申请日：2005-03-23

申请人： Sean Seutter ,  Michael Yang ,  Ming Xi

发明人： Sean Seutter ,  Michael Yang ,  Ming Xi

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/8242

CPC分类号： C23C16/45553 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76844 ,  H01L21/76862

摘要： A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber. A nitrogen concentration of the tantalum nitride layer is reduced by exposing the substrate to a plasma annealing process. A metal-containing layer is then deposited on the tantalum nitride layer by a deposition process.

摘要翻译： 公开了一种形成用于集成电路制造的氮化钽层的方法。 在一个实施例中，该方法包括通过在设置在处理室中的衬底上化学吸附钽前体和氮前体来形成氮化钽层。 氮化钽层的氮浓度通过将衬底暴露于等离子体退火工艺而降低。 然后通过沉积工艺将含金属的层沉积在氮化钽层上。

公开(公告)号：US20060281310A1

公开(公告)日：2006-12-14

申请号：US11147938

申请日：2005-06-08

申请人： Jacob Smith ,  Alexander Tam ,  R. Iyer ,  Sean Seutter ,  Binh Tran ,  Nir Merry ,  Adam Brailove ,  Robert Shydo ,  Robert Andrews ,  Frank Roberts ,  Theodore Smick ,  Geoffrey Ryding

发明人： Jacob Smith ,  Alexander Tam ,  R. Iyer ,  Sean Seutter ,  Binh Tran ,  Nir Merry ,  Adam Brailove ,  Robert Shydo ,  Robert Andrews ,  Frank Roberts ,  Theodore Smick ,  Geoffrey Ryding

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： H01L21/68792 ,  C23C16/4584 ,  H01L21/67126 ,  H01L21/68742

摘要： A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.

摘要翻译： 本文公开了一种利用旋转衬底支撑件来处理衬底的方法和装置。 在一个实施例中，用于处理衬底的装置包括具有设置在腔室内的衬底支撑组件的室。 衬底支撑组件包括具有支撑表面的衬底支撑件和设置在支撑表面下方的加热器。 轴联接到基板支撑件，并且电机通过转子联接到轴，以向基板支撑件提供旋转运动。 密封块设置在转子周围并与其形成密封。 密封块具有至少一个密封件和沿密封块和轴之间的界面设置的至少一个通道。 端口连接到每个通道以连接到泵。 升降机构联接到轴上以升高和降低基板支撑。

公开(公告)号：US20060009041A1

公开(公告)日：2006-01-12

申请号：US10885969

申请日：2004-07-06

申请人： R. Iyer ,  Andrew Lam ,  Yuji Maeda ,  Thomas Mele ,  Faran Nouri ,  Jacob Smith ,  Sean Seutter ,  Sanjeev Tandon ,  Randhir Singh Thakur ,  Sunderraj Thirupapuliyur

发明人： R. Iyer ,  Andrew Lam ,  Yuji Maeda ,  Thomas Mele ,  Faran Nouri ,  Jacob Smith ,  Sean Seutter ,  Sanjeev Tandon ,  Randhir Singh Thakur ,  Sunderraj Thirupapuliyur

IPC分类号： H01L21/302

CPC分类号： H01L21/324 ,  H01L29/1054 ,  H01L29/6656 ,  H01L29/7842 ,  H01L29/7843

摘要： An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

公开(公告)号：US20050109276A1

公开(公告)日：2005-05-26

申请号：US10911208

申请日：2004-08-04

申请人： R. Iyer ,  Sean Seutter ,  Jacob Smith ,  Gregory Dibello ,  Alexander Tam ,  Binh Tran ,  Sanjeev Tandon

发明人： R. Iyer ,  Sean Seutter ,  Jacob Smith ,  Gregory Dibello ,  Alexander Tam ,  Binh Tran ,  Sanjeev Tandon

IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/4557 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45565

摘要： A method and apparatus for a CVD chamber that provides uniform heat distribution, efficient precursor delivery, uniform distribution of process and inert chemicals, and thermal management of residues in the chamber and exhaust surfaces by changing the mechanical design of a single wafer thermal CVD chamber. The improvements include a processing chamber comprising a chamber body and a chamber lid defining a processing region, a substrate support disposed in the processing region, a gas delivery system mounted on the chamber lid, the gas delivery system comprising a lid, an adapter ring and two blocker plates that define a gas mixing region, and a face plate fastened to the adapter ring, a heating element positioned to heat the adapter ring to a desired temperature, and a temperature controlled exhaust system. The improvements also include a method for depositing a silicon nitride layer on a substrate, comprising vaporizing bis(tertiary-butylamino) silane, flowing the bis(tertiary-butylamino) silane into a processing chamber, flowing ammonia into a processing chamber, combining the two reactants in a mixer in the chamber lid, having an additional mixing region defined by an adapter ring and at least two blocker plates, heating the adapter ring, flowing the bis(tertiary-butylamino) silane through a gas distribution plate into a processing region above a substrate. The improvements reduce defects across the surface of the substrate and improve product yield.

摘要翻译： 一种用于CVD室的方法和装置，其通过改变单个晶片热CVD室的机械设计来提供均匀的热分布，有效的前体输送，工艺和惰性化学品的均匀分布，以及腔室和排气表面中残留物的热管理。 该改进包括一个处理室，该处理室包括一个室主体和一个限定处理区域的室盖，设置在处理区域中的基板支撑件，安装在室盖上的气体输送系统，气体输送系统包括盖子，适配器环和 限定气体混合区域的两个阻挡板和紧固到接合环的面板，定位成将接合环加热到所需温度的加热元件和温度控制的排气系统。 该改进还包括在基底上沉积氮化硅层的方法，包括将双（叔丁基氨基）硅烷蒸发，将双（叔丁基氨基）硅烷流入处理室，将氨流入处理室，将两 在室盖中的混合器中的反应物，具有由适配环和至少两个阻挡板限定的附加混合区域，加热适配环，使双（叔丁基氨基）硅烷通过气体分布板流入上述加工区域 底物。 这些改进减少了衬底表面的缺陷并提高了产品的产率。