公开(公告)号：US07906168B2

公开(公告)日：2011-03-15

申请号：US11902782

申请日：2007-09-25

申请人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

发明人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

IPC分类号： B05D5/12

CPC分类号： C23C16/509 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45546 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.

摘要翻译： 在选择性地供给包括硅源气体的第一工艺气体和包括氧化气体的第二工艺气体的工艺领域中，通过CVD在目标衬底上形成氧化物膜。 氧化膜是通过循环执行而形成的，每个循环包括第一和第二步骤。 第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。 第二工序气体供给第二工序气体，从而氧化目标衬底表面上的吸附层。 硅源气体是一价或二价氨基硅烷气体，并且每个循环被设置为使用低于用于三价氨基硅烷气体的工艺温度的工艺温度。

公开(公告)号：US20080107824A1

公开(公告)日：2008-05-08

申请号：US11896752

申请日：2007-09-05

申请人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

发明人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

IPC分类号： C23C16/513 ,  C23C16/40 ,  B05C11/00

CPC分类号： C23C16/45525 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45544

摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.

摘要翻译： 在目标基板上通过CVD形成氧化膜，在选择性地供给包括含有膜源元素而不含氨基的源气体的第一工艺气体的工艺领域中，包含氧化气体的第二工艺气体和 包括初步处理气体的第三工艺气体。 第一步骤包括供给由激励机构激励的第三处理气体的激发期，由此通过预处理气体基团对目标基板进行预处理。 第二步进行第一处理气体的供给，从而将膜源元件吸附在目标基板上。 第三步骤包括供给由激励机构激励的第二处理气体的激励周期，从而通过氧化气体基团氧化吸附在目标基板上的膜源元件。

公开(公告)号：US20080081104A1

公开(公告)日：2008-04-03

申请号：US11902782

申请日：2007-09-25

申请人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

发明人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

IPC分类号： C23C16/44

CPC分类号： C23C16/509 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45546 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.

摘要翻译： 在选择性地供给包括硅源气体的第一工艺气体和包括氧化气体的第二工艺气体的工艺领域中，通过CVD在目标衬底上形成氧化物膜。 氧化膜是通过循环执行而形成的，每个循环包括第一和第二步骤。 第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。 第二工序气体供给第二工序气体，从而氧化目标衬底表面上的吸附层。 硅源气体是一价或二价氨基硅烷气体，并且每个循环被设置为使用低于用于三价氨基硅烷气体的工艺温度的工艺温度。

公开(公告)号：US08168270B2

公开(公告)日：2012-05-01

申请号：US11896752

申请日：2007-09-05

申请人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

发明人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

IPC分类号： C23C16/513

CPC分类号： C23C16/45525 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45544

摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.

摘要翻译： 在目标基板上通过CVD形成氧化膜，在选择性地供给包括含有膜源元素而不含氨基的源气体的第一工艺气体的工艺领域中，包含氧化气体的第二工艺气体和 包括初步处理气体的第三工艺气体。 第一步骤包括供给由激励机构激励的第三处理气体的激发期，由此通过预处理气体基团对目标基板进行预处理。 第二步进行第一处理气体的供给，从而将膜源元件吸附在目标基板上。 第三步骤包括供给由激励机构激励的第二处理气体的激励周期，从而通过氧化气体基团氧化吸附在目标基板上的膜源元件。

公开(公告)号：US08124181B2

公开(公告)日：2012-02-28

申请号：US11907968

申请日：2007-10-18

申请人： Kazuhide Hasebe ,  Takehiko Fujita ,  Shigeru Nakajima ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Takehiko Fujita ,  Shigeru Nakajima ,  Jun Ogawa

IPC分类号： C23C16/40

CPC分类号： H01L21/67109 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidation method includes supplying oxidizing and deoxidizing gases to a process field by spouting the gases in lateral directions respectively from first and second groups of gas spouting holes. Each group of holes is disposed adjacent to target substrates on one side of the process field and arrayed over a length corresponding to the process field in a vertical direction. Gases are exhausted through an exhaust port disposed opposite to the first and second groups of gas spouting holes with the process field interposed therebetween and present over a length corresponding to the process field in the vertical direction. This causes the gases to flow along the surfaces of the target substrates, thus forming gas flows parallel with the target substrates. The process field is heated by a heater disposed around the process container to generate oxygen radicals and hydroxyl group radicals within the process field.

摘要翻译： 氧化方法包括通过分别从第一和第二组气体喷射孔喷射气体在横向方向向工艺场提供氧化和脱氧气体。 每组孔与过程场一侧的目标衬底相邻设置，并且在垂直方向上排列在对应于过程场的长度上。 气体通过与第一和第二组气体喷射孔相对设置的排气口排出，其中过程场介于它们之间并且在垂直方向上存在超过对应于过程场的长度。 这使得气体沿着目标基板的表面流动，从而形成与目标基板平行的气体流。 工艺场由设置在加工容器周围的加热器加热，以在工艺场内产生氧自由基和羟基自由基。

公开(公告)号：US20100319619A1

公开(公告)日：2010-12-23

申请号：US12852692

申请日：2010-08-09

申请人： Takehiko FUJITA ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

发明人： Takehiko FUJITA ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

IPC分类号： C23C16/52 ,  C23C16/22

CPC分类号： C30B33/005 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

摘要： In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.

摘要翻译： 在半导体工艺的氧化方法中，目标衬底在处理容器的工艺场内沿垂直方向间隔放置。 从处理场的一侧向工艺场供给氧化气体和脱氧气体，同时从另一侧排出气体。 一种或两种氧化气体和脱氧气体被激活。 使氧化气体和脱氧气体相互反应，从而在工艺场内产生氧自由基和羟基自由基。 通过氧自由基和羟基自由基在目标基材的表面进行氧化处理。

公开(公告)号：US07795158B2

公开(公告)日：2010-09-14

申请号：US11892949

申请日：2007-08-28

申请人： Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

发明人： Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C30B33/005 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

摘要： In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.

摘要翻译： 在半导体工艺的氧化方法中，目标衬底在处理容器的工艺场内沿垂直方向间隔放置。 从处理场的一侧向工艺场供给氧化气体和脱氧气体，同时从另一侧排出气体。 一种或两种氧化气体和脱氧气体被激活。 使氧化气体和脱氧气体相互反应，从而在工艺场内产生氧自由基和羟基自由基。 通过氧自由基和羟基自由基在目标基材的表面进行氧化处理。

公开(公告)号：US20080095678A1

公开(公告)日：2008-04-24

申请号：US11907968

申请日：2007-10-18

申请人： Kazuhide Hasebe ,  Takehiko Fujita ,  Shigeru Nakajima ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Takehiko Fujita ,  Shigeru Nakajima ,  Jun Ogawa

IPC分类号： B01J19/00

CPC分类号： H01L21/67109 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidation apparatus for a semiconductor process includes a gas supply system configured to supply an oxidizing gas and a deoxidizing gas to the process field of a process container through a gas supply port disposed adjacent to target substrates on one side of the process field. The gas supply port includes a plurality of gas spouting holes arrayed over a length corresponding to the process field in a vertical direction. A heater is disposed around the process container and configured to heat the process field. A control section is preset to perform control such that the oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field, and an oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.

摘要翻译： 一种用于半导体工艺的氧化设备包括一个气体供给系统，该气体供给系统被配置为通过与处理场一侧的目标基板相邻设置的气体供给口向处理容器的处理区域供给氧化气体和脱氧气体。 气体供给口包括在垂直方向上与处理场对应的长度排列的多个气体喷出孔。 加热器设置在处理容器周围并且被配置为加热过程场。 控制部被设定为进行控制，使得氧化气体和脱氧气体彼此反应，从而在工艺场内产生氧自由基和羟基自由基，并且在靶的表面上进行氧化处理 通过使用氧自由基和羟基自由基来形成底物。

公开(公告)号：US20080057199A1

公开(公告)日：2008-03-06

申请号：US11892949

申请日：2007-08-28

申请人： Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

发明人： Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

IPC分类号： C23C16/455

CPC分类号： C30B33/005 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

摘要： In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.

摘要翻译： 在半导体工艺的氧化方法中，目标衬底在处理容器的工艺场内沿垂直方向间隔放置。 从处理场的一侧向工艺场供给氧化气体和脱氧气体，同时从另一侧排出气体。 一种或两种氧化气体和脱氧气体被激活。 使氧化气体和脱氧气体相互反应，从而在工艺场内产生氧自由基和羟基自由基。 通过氧自由基和羟基自由基在目标基材的表面进行氧化处理。

公开(公告)号：US07923378B2

公开(公告)日：2011-04-12

申请号：US12320535

申请日：2009-01-28

申请人： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa

IPC分类号： H01L21/00

CPC分类号： C23C16/452 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/31612

摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.

摘要翻译： 在目标基板上通过CVD形成含硅绝缘膜，在选择性地供给包含二异丙基氨基硅烷气体的第一工艺气体和包含氧化性气体或氮化气体的第二工艺气体的工艺领域中。 通过交替地执行包括第一和第二步骤的循环的多次来形成膜。 第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。 第二工序气体供给第二工序气体，从而氧化或氮化目标衬底表面上的吸附层。 第二步骤包括通过激励机构激励第二处理气体的第二处理气体供应给处理场的激励周期。