公开(公告)号：US06388300B1

公开(公告)日：2002-05-14

申请号：US09490372

申请日：2000-01-24

申请人： Kazuhiko Kano ,  Junji Ohara ,  Nobuyuki Ohya

发明人： Kazuhiko Kano ,  Junji Ohara ,  Nobuyuki Ohya

IPC分类号： H01L2994

CPC分类号： B81B3/0086 ,  B81B2201/0235 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/131 ,  G01P2015/0814

摘要： A semiconductor physical quantity sensor, in which a beam-structure having a movable electrode and a fixed electrode confronted with the movable electrode are integrally formed in one substrate, having a new electric isolation structure. A semiconductor physical quantity sensor such as an acceleration sensor includes a silicon substrate; a laterally extending hollow formed in the silicon substrate; and a base plate portion defined below the hollow in the silicon substrate. A rectangular frame portion, a beam-structure having a movable electrode, and a fixed electrode is defined by the hollow and trenches. The fixed electrode confronts with the movable electrodes of the beam-structure. Trenches, in which electrical insulating material is buried, are formed between the movable electrode and the rectangular frame portion and between the fixed electrodes and the rectangular frame portion.

摘要翻译： 一种半导体物理量传感器，其中具有可移动电极的束结构和面对可动电极的固定电极一体地形成在一个基板中，具有新的电隔离结构。 诸如加速度传感器的半导体物理量传感器包括硅衬底; 形成在硅衬底中的横向延伸的中空; 以及限定在硅衬底中的中空部下方的基板部。 由中空和沟槽限定矩形框架部分，具有可移动电极的束结构和固定电极。 固定电极与梁结构的可动电极相对。 在可动电极和矩形框架部分之间以及在固定电极和矩形框架部分之间形成有埋入电绝缘材料的沟槽。

公开(公告)号：US06277756B1

公开(公告)日：2001-08-21

申请号：US09501762

申请日：2000-02-10

申请人： Junji Ohara ,  Shinji Yoshihara ,  Kazuhiko Kano ,  Nobuyuki Ohya

发明人： Junji Ohara ,  Shinji Yoshihara ,  Kazuhiko Kano ,  Nobuyuki Ohya

IPC分类号： H01L21311

CPC分类号： G01P15/0802 ,  B81B2203/033 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/30655 ,  H01L21/762

摘要： A method of manufacturing a semiconductor device, which can effectively form a trench having a high aspect ratio with relatively simple steps. An initial trench is formed in a silicon substrate by a reactive ion etching using an oxide film mask as an etching mask. After forming a protection oxide film on an inside surface of the trench, a part of the protection oxide film at which positions at a bottom surface of the trench is removed by a reactive ion etching, so that an etching of the silicon substrate is advanced through the bottom surface of the trench. Furthermore, the step for forming the protection oxide film and the step for re-etching the bottom surface of the trench are repeatedly performed, so that a depth of the trench becomes a predetermined depth. These steps are performed in a common chamber by using plasma processed with switching gases to be introduced to the chamber.

摘要翻译： 一种制造半导体器件的方法，其可以通过相对简单的步骤有效地形成具有高纵横比的沟槽。 通过使用氧化物膜掩模作为蚀刻掩模的反应离子蚀刻在硅衬底中形成初始沟槽。 在沟槽的内表面上形成保护氧化膜之后，通过反应离子蚀刻去除沟槽底面的位置的保护氧化膜的一部分，使得硅衬底的蚀刻通过 沟槽的底面。 此外，重复执行用于形成保护氧化膜的步骤和重新蚀刻沟槽的底表面的步骤，使得沟槽的深度变为预定深度。 这些步骤通过使用等离子体处理的切换气体被引入腔室在公共室中进行。

公开(公告)号：US07201053B2

公开(公告)日：2007-04-10

申请号：US10834183

申请日：2004-04-29

申请人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

发明人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

IPC分类号： G01P15/125 ,  G01P9/04

CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

摘要翻译： 电容式物理量传感器检测物理量。 传感器包括可移动部分，其包括可动电极和包括固定电极的固定部分。 固定电极包括面向可动电极的检测面的检测面。 可移动电极可以根据物理量朝向固定电极移动，使得检测表面之间的距离是可变的。 可移动和固定电极中的至少一个包括凹槽。 凹槽设置在可移动和固定电极中的一个的顶部或底部上，具有从顶部或底部的预定深度，并且从检测表面延伸到相对的表面。

公开(公告)号：US09246461B2

公开(公告)日：2016-01-26

申请号：US13380995

申请日：2010-06-30

申请人： Morito Akiyama ,  Kazuhiko Kano ,  Akihiko Teshigahara

发明人： Morito Akiyama ,  Kazuhiko Kano ,  Akihiko Teshigahara

IPC分类号： C23C14/00 ,  H03H3/02 ,  C23C14/06

CPC分类号： H03H3/02 ,  C23C14/0036 ,  C23C14/0617 ,  C23C14/0641 ,  H01L41/316 ,  Y10T428/24355

摘要： A method for manufacturing a piezoelectric thin film including an aluminum nitride thin film containing scandium on a substrate, the method includes: sputtering step for sputtering aluminum and scandium under an atmosphere containing at least a nitrogen gas. In the sputtering step in the method according to the present invention, a scandium content rate falls within the range from 0.5% by atom to 50% by atom when a temperature of the substrate falls within the range from 5° C. to 450° C. during the sputtering step.

摘要翻译： 一种制造包括在基板上含有钪的氮化铝薄膜的压电薄膜的方法，所述方法包括：在至少含有氮气的气氛下溅射铝和钪的溅射步骤。 在根据本发明的方法的溅射步骤中，当基板的温度在5℃至450℃的范围内时，钪含量率在0.5原子％至50原子的范围内 在溅射步骤期间。

公开(公告)号：US20120000766A1

公开(公告)日：2012-01-05

申请号：US13171806

申请日：2011-06-29

申请人： Akihiko Teshigahara ,  Kazuhiko Kano ,  Morito Akiyama ,  Tatsuo Tabaru ,  Keiko Nishikubo

发明人： Akihiko Teshigahara ,  Kazuhiko Kano ,  Morito Akiyama ,  Tatsuo Tabaru ,  Keiko Nishikubo

IPC分类号： C23C14/34

CPC分类号： C23C14/0641 ,  C23C14/0036 ,  C23C14/3414

摘要： A method for manufacturing a scandium aluminum nitride film includes: sputtering a scandium aluminum alloy target under atmosphere including nitrogen gas so that a thin film is deposited on a substrate. Since the scandium aluminum nitride film is manufactured with using one alloy target, a composition of the film is maintained even when the sputtering time is long. Further, the above method is capable of being performed by a mass production sputtering apparatus.

摘要翻译： 制造氮化钪膜的方法包括：在包括氮气的气氛下溅射钪铝合金靶，使得在基板上沉积薄膜。 由于使用一种合金靶来制造氮化钪膜，所以即使在溅射时间长的情况下也能够保持膜的组成。 此外，上述方法能够通过大规模生产溅射装置进行。

公开(公告)号：US20100219910A1

公开(公告)日：2010-09-02

申请号：US12659197

申请日：2010-02-26

申请人： Hideaki Yamada ,  Kazuhiko Kano

发明人： Hideaki Yamada ,  Kazuhiko Kano

IPC分类号： H03H9/25

CPC分类号： H03H9/14547

摘要： A surface acoustic wave device is disclosed. The surface acoustic wave device includes: a substrate having a plane surface; multiple first electrodes formed on the plane surface of the substrate; and multiple second electrodes formed on the plane surface of the substrate. Each of the first and second electrodes has a predetermined closed ring shape. The first and second electrodes are concentric. The second electrodes are located radially inside or radially outside of the first electrodes.

摘要翻译： 公开了一种表面声波装置。 声表面波装置包括：具有平面的基板; 在基板的平面上形成多个第一电极; 以及形成在基板的平面上的多个第二电极。 第一和第二电极中的每一个具有预定的闭环形状。 第一和第二电极是同心的。 第二电极位于第一电极的径向内侧或径向外侧。

公开(公告)号：US07129176B2

公开(公告)日：2006-10-31

申请号：US10759025

申请日：2004-01-20

申请人： Junji Oohara ,  Kazuhiko Kano ,  Yoshitaka Noda ,  Yukihiro Takeuchi ,  Toshiyuki Morishita

发明人： Junji Oohara ,  Kazuhiko Kano ,  Yoshitaka Noda ,  Yukihiro Takeuchi ,  Toshiyuki Morishita

IPC分类号： H01L21/027

CPC分类号： H01L27/14625 ,  G02B6/4249 ,  H01L27/14627 ,  H01L27/14685

摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.

摘要翻译： 光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。 每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。 光学部件与基板一体化。 该光学部件具有高设计自由度。

公开(公告)号：US07107846B2

公开(公告)日：2006-09-19

申请号：US11265281

申请日：2005-11-03

申请人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

发明人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817

摘要： A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

摘要翻译： 电容型加速度传感器包括半导体基板，通过弹簧部分支撑在基板上的重量部分，与重物部分一体化的可动电极以及与该基板悬臂连接的固定电极。 根据加速度，可移动电极与可动电极的相对表面一起移动。 可动电极的相对表面面对固定电极的相对表面，以提供电容器。 电容器的电容根据可动电极的位移而变化，使得外部电路作为电容变化来检测加速度。 可移动和固定电极的每个相对表面具有用于增加电容变化的凹凸部分。

公开(公告)号：US07004026B2

公开(公告)日：2006-02-28

申请号：US10703461

申请日：2003-11-10

申请人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

发明人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817

摘要： A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

公开(公告)号：US06906394B2

公开(公告)日：2005-06-14

申请号：US10448277

申请日：2003-05-30

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

IPC分类号： G01P15/125 ,  B81B3/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/84 ,  H01L27/01

CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。