公开(公告)号：US07601485B2

公开(公告)日：2009-10-13

申请号：US11360809

申请日：2006-02-24

申请人： Kazuma Sekiya ,  Takashi Ono ,  Akihito Kawai

发明人： Kazuma Sekiya ,  Takashi Ono ,  Akihito Kawai

IPC分类号： G03F7/26 ,  G03F9/00

CPC分类号： G03F7/2022 ,  G03F1/00 ,  G03F7/70425 ,  G03F7/70466

摘要： An exposure method for exposing a resist film disposed on one surface of a wafer includes a first exposure step of locating an exposure mask at a first predetermined position with respect to the wafer, and exposing the resist film. The exposure method further includes a second exposure step of displacing the exposure mask relative to the wafer by a predetermined dimension in a predetermined direction to locate the exposure mask at a second predetermined position, and exposing the resist film.

摘要翻译： 用于曝光设置在晶片的一个表面上的抗蚀剂膜的曝光方法包括：将曝光掩模相对于晶片定位在第一预定位置并使抗蚀剂膜曝光的第一曝光步骤。 曝光方法还包括第二曝光步骤，使曝光掩模相对于晶片沿预定方向移动预定尺寸，以将曝光掩模定位在第二预定位置，并使抗蚀剂膜曝光。

公开(公告)号：US20060199114A1

公开(公告)日：2006-09-07

申请号：US11360809

申请日：2006-02-24

申请人： Kazuma Sekiya ,  Takashi Ono ,  Akihito Kawai

发明人： Kazuma Sekiya ,  Takashi Ono ,  Akihito Kawai

IPC分类号： G03C5/00

CPC分类号： G03F7/2022 ,  G03F1/00 ,  G03F7/70425 ,  G03F7/70466

摘要： An exposure method for exposing a resist film disposed on one surface of a wafer includes a first exposure step of locating an exposure mask at a first predetermined position with respect to the wafer, and exposing the resist film. The exposure method further includes a second exposure step of displacing the exposure mask relative to the wafer by a predetermined dimension in a predetermined direction to locate the exposure mask at a second predetermined position, and exposing the resist film.

公开(公告)号：US20060094209A1

公开(公告)日：2006-05-04

申请号：US11262770

申请日：2005-11-01

申请人： Kazuma Sekiya ,  Takashi Ono

发明人： Kazuma Sekiya ,  Takashi Ono

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  G03F7/265 ,  G03F7/36 ,  H01L21/3086

摘要： To divide into individual devices efficiently in dicing a wafer without causing quality of the devices to lower, a wafer processing method includes steps of coating a rear surface of the wafer with a resist film, exposing and sensitizing portions of the resist film other than regions corresponding to the streets; and supplying a silylation agent onto a surface of the resist film and silylating the resist film in a sensitized region. In an etching unit, an oxygen- or chlorine-containing gas is plasmatized and supplied to a rear surface of the wafer coated with a silylated resist film, and the resist film in an unsilylated regions corresponding to the streets is ashed and removed. A stable fluoride gas is plasmatized and supplied to the rear surface of the wafer, and the resist film in the regions corresponding to the streets is etch-removed to divide the wafer W into individual devices.

摘要翻译： 为了在不导致设备质量降低的情况下有效地划分为单个设备，晶片处理方法包括以下步骤：用抗蚀剂膜涂覆晶片的后表面，对除了对应的区域之外的抗蚀剂膜的部分进行曝光和增感 到街上 并将硅烷化剂供应到抗蚀剂膜的表面上，并使敏化区域中的抗蚀剂膜甲硅烷基化。 在蚀刻单元中，将含氧气或含氯气体等离子化并供给到涂覆有甲硅烷基化抗蚀剂膜的晶片的后表面，并且对应于街道的未溶胶化区域中的抗蚀剂膜被去灰和除去。 将稳定的氟化物气体等离子化并提供给晶片的后表面，并且蚀刻除去与街道对应的区域中的抗蚀剂膜，以将晶片W分成单独的器件。

公开(公告)号：US07288467B2

公开(公告)日：2007-10-30

申请号：US11262770

申请日：2005-11-01

申请人： Kazuma Sekiya ,  Takashi Ono

发明人： Kazuma Sekiya ,  Takashi Ono

IPC分类号： H01L21/78 ,  H01L21/48

CPC分类号： H01L21/78 ,  G03F7/265 ,  G03F7/36 ,  H01L21/3086

摘要： To divide into individual devices efficiently in dicing a wafer without causing quality of the devices to lower, a wafer processing method includes steps of coating a rear surface of the wafer with a resist film, exposing and sensitizing portions of the resist film other than regions corresponding to the streets; and supplying a silylation agent onto a surface of the resist film and silylating the resist film in a sensitized region. In an etching unit, an oxygen- or chlorine-containing gas is plasmatized and supplied to a rear surface of the wafer coated with a silylated resist film, and the resist film in an unsilylated regions corresponding to the streets is ashed and removed. A stable fluoride gas is plasmatized and supplied to the rear surface of the wafer, and the resist film in the regions corresponding to the streets is etch-removed to divide the wafer W into individual devices.

摘要翻译： 为了在不导致设备质量降低的情况下有效地划分为单个设备，晶片处理方法包括以下步骤：用抗蚀剂膜涂覆晶片的后表面，对除了对应的区域之外的抗蚀剂膜的部分进行曝光和增感 到街上 并将硅烷化剂供应到抗蚀剂膜的表面上，并使敏化区域中的抗蚀剂膜甲硅烷基化。 在蚀刻单元中，将含氧气或含氯气体等离子化并供给到涂覆有甲硅烷基化抗蚀剂膜的晶片的后表面，并且对应于街道的未溶胶化区域中的抗蚀剂膜被去灰和除去。 将稳定的氟化物气体等离子化并提供给晶片的后表面，并且蚀刻除去与街道对应的区域中的抗蚀剂膜，以将晶片W分成单独的器件。

公开(公告)号：US09048349B2

公开(公告)日：2015-06-02

申请号：US13309066

申请日：2011-12-01

申请人： Kazuma Sekiya

发明人： Kazuma Sekiya

IPC分类号： H01L21/78 ,  H01L33/00 ,  H01L21/683 ,  B23K26/00 ,  B23K26/36 ,  B23K26/40 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01L33/0095 ,  B23K26/364 ,  B23K26/40 ,  B23K26/57 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/6836 ,  H01L21/78 ,  H01L33/0079 ,  H01L2221/68327 ,  H01L2221/68386 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/32341

摘要： A wafer processing method transfers an optical device layer (ODL) in an optical device wafer (ODW) to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer, and is partitioned by a plurality of crossing streets to define a plurality of regions where optical devices are formed. The transfer substrate is bonded to the front side of the ODL. The transfer substrate and the ODL are cut along the streets. The transfer substrate is attached to a supporting member, and a laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the ODW and the transfer substrate. The focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate is then peeled off from the ODL.

摘要翻译： 晶片处理方法将光学器件晶片（ODW）中的光学器件层（ODL）传输到转移衬底。 ODL通过缓冲层在外延基板的前侧形成，并且被多个交叉街道划分，以限定形成光学器件的多个区域。 转印衬底粘合到ODL的正面。 转移基材和ODL沿街道切割。 转印衬底附接到支撑构件，并且激光束从外延衬底的背面施加到外延衬底到ODW和转移衬底的单元。 激光束的焦点设置在缓冲层中，从而分解缓冲层。 然后将外延衬底从ODL剥离。

公开(公告)号：US08198175B2

公开(公告)日：2012-06-12

申请号：US13023165

申请日：2011-02-08

申请人： Kazuma Sekiya ,  Koichi Kondo

发明人： Kazuma Sekiya ,  Koichi Kondo

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3121 ,  H01L2221/68331 ,  H01L2221/68336 ,  H01L2224/32245 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/00

摘要： A processing method for a package substrate having a base substrate partitioned by a plurality of crossing division lines to form a plurality of chip forming areas where a plurality of semiconductor chips are respectively formed and molded with resin. The package substrate has a resin surface and an electrode surface opposite to the resin surface. The processing method includes a warp correcting step of cutting the package substrate from the resin surface or the electrode surface along the division lines by using a cutting blade to form a cut groove, thereby correcting a warp of the package substrate, and a grinding step of grinding the resin surface of the package substrate in the condition where the electrode surface of the package substrate is held on a holding table after performing the warp correcting step, thereby reducing the thickness of the package substrate to a predetermined thickness.

摘要翻译： 一种用于封装基板的处理方法，其具有由多个交叉分割线分隔的基底基板，以形成多个芯片形成区域，其中分别形成多个半导体芯片并用树脂模制。 封装基板具有树脂表面和与树脂表面相对的电极表面。 处理方法包括：通过使用切割刀片切割切割槽来切割来自树脂表面或电极表面的封装基板的翘曲校正步骤，从而校正封装基板的翘曲，并且研磨步骤 在进行翘曲校正步骤之后，将封装基板的电极表面保持在保持台上的状态下研磨封装基板的树脂表面，从而将封装基板的厚度减小到预定厚度。

公开(公告)号：US20110244612A1

公开(公告)日：2011-10-06

申请号：US13077203

申请日：2011-03-31

申请人： Kazuma Sekiya

发明人： Kazuma Sekiya

IPC分类号： H01L21/78

CPC分类号： B28D5/0011 ,  H01L33/0095 ,  H01S5/0202

摘要： An optical device wafer processing method for dividing an optical device wafer into individual optical devices along a plurality of crossing streets formed on the front side of the wafer. The wafer is composed of a substrate and an optical device layer formed on the front side of the substrate. The individual optical devices are respectively formed in a plurality of regions partitioned by the streets. The optical device wafer processing method includes the steps of cutting the back side of the substrate along each street by using a cutting blade to thereby form a first cut groove as a first break start point on the back side of the substrate along each street, cutting the front side of the wafer along each street by using a cutting blade after forming the first cut groove to thereby form a second cut groove as a second break start point on the front side of the wafer along each street so that the second cut groove has a depth reaching the front side of the substrate, and applying an external force to the wafer after forming the second cut groove to thereby break the wafer along each street where the first and second cut grooves are formed, thereby dividing the wafer into the individual optical devices.

摘要翻译： 一种光学器件晶片处理方法，用于沿着形成在晶片的前侧上的多个交叉街道将光学器件晶片分割为各个光学器件。 晶片由基板和形成在基板前侧的光学器件层构成。 各个光学装置分别形成在由街道分隔开的多个区域中。 光学元件晶片处理方法包括以下步骤：通过使用切割刀沿着每个街道切割基板的背面，从而沿着每条街道在基板的背面上形成第一切割槽作为第一切割开始点，切割 通过在形成第一切割槽之后通过使用切割刀片沿着每条街道的前侧来形成第二切割槽，从而沿着每条街道在晶片的前侧上形成第二切割槽作为第二切割开始点，使得第二切割槽具有 深度到达基板的前侧，并且在形成第二切割槽之后向晶片施加外力，从而沿着形成第一和第二切割槽的每个街道破裂晶片，从而将晶片分成单独的光学 设备。

公开(公告)号：US07994025B2

公开(公告)日：2011-08-09

申请号：US12902311

申请日：2010-10-12

申请人： Kazuma Sekiya

发明人： Kazuma Sekiya

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  B24B1/00 ,  B24B7/228 ,  B24B27/06 ,  H01L21/67092 ,  H01L21/78

摘要： A wafer processing method of processing a wafer having on a front surface a device area where a plurality of devices are formed by being sectioned by predetermined dividing lines, and an outer circumferential redundant area surrounding the device area, includes the steps of: sticking a protection tape to the front surface of the wafer; holding a protection tape side of the wafer by a rotatable chuck table, positioning a cutting blade on a rear surface of the wafer, and rotating the chuck table to cut a boundary portion between the device area and the outer circumferential redundant area to form a separation groove; grinding only the rear surface of the wafer corresponding to the device area to form a circular recessed portion to leave the ring-like outer circumferential redundant area as a ring-like reinforcing portion, the wafer being such that the device area and the ring-like outer circumferential redundant area are united by the protection tape; and conveying the wafer supported by the ring-like reinforcing portion via the protection tape.

摘要翻译： 一种处理晶片的晶片处理方法，其特征在于，具有以下步骤：在前表面具有通过预定划分线分割多个器件而形成的器件区域，以及围绕所述器件区域的外周冗余区域， 胶带到晶片的前表面; 通过可旋转卡盘台保持晶片的保护带侧，将切割刀片定位在晶片的后表面上，并且旋转卡盘台以切割装置区域和外周冗余区域之间的边界部分，以形成分离 槽; 仅研磨与装置区域对应的晶片的后表面以形成圆形凹部，以将环状外周冗余区域留作为环形加强部分，晶片使得装置区域和环状 外周冗余区域由保护带组合; 以及经由所述保护带输送由所述环状增强部支撑的所述晶片。

公开(公告)号：US07608523B2

公开(公告)日：2009-10-27

申请号：US11505895

申请日：2006-08-18

申请人： Kazuma Sekiya

发明人： Kazuma Sekiya

IPC分类号： H01L21/00

CPC分类号： H01L21/6838 ,  H01L21/67132

摘要： A method of processing a wafer having a plurality of streets formed on the front surface in a lattice pattern and a plurality of devices formed in a plurality of areas sectioned by the plurality of streets, comprising an adhesive tape amounting step for mounting the front surface of the outer peripheral portion of an adhesive tape having an adhesive layer on the front surface and a plurality of via holes onto an opening of an annular frame to cover it; a frame fixing step for placing the rear surface of the adhesive tape mounted on the annular frame on the chuck table for suction-holding a workpiece of a processing machine and fixing the annular frame; a wafer affixing step for placing the wafer on the front surface of the wafer affixing area of the adhesive tape, suction-holding the adhesive tape on the suction-holding area of the chuck table by exerting suction-force to the suction-holding area, and sucking the wafer to affix it to the front surface of the adhesive tape; and a processing step for processing the wafer along the streets.

摘要翻译： 一种处理晶片的方法，所述晶片具有以格子图案形成在所述前表面上的多个街道，以及形成在由所述多个街道分割的多个区域中的多个装置，所述方法包括：胶带装配步骤， 在前表面上具有粘合剂层的胶带的外周部分和多个通孔到环形框架的开口以覆盖它; 框架固定步骤，用于将安装在环形框架上的胶带的后表面放置在卡盘台上，用于吸附保持加工机器的工件并固定环形框架; 用于将晶片放置在粘合带的晶片固定区域的前表面上的晶片固定步骤，通过向抽吸保持区域施加吸力将粘合带吸附到卡盘台的吸持保持区域上; 并将晶片吸附到粘合带的前表面上; 以及用于沿街道处理晶片的处理步骤。

公开(公告)号：US20090061599A1

公开(公告)日：2009-03-05

申请号：US12180283

申请日：2008-07-25

申请人： Kazuma Sekiya ,  Yusuke Kimura

发明人： Kazuma Sekiya ,  Yusuke Kimura

IPC分类号： H01L21/304

CPC分类号： H01L21/31058 ,  B23C3/00 ,  B28D5/02 ,  H01L21/31053

摘要： A semiconductor wafer processing method for planarizing an additional layer formed on the front side of a semiconductor wafer. First, the wafer is held on a chuck table included in a cutting device in the condition where the additional layer is exposed, and a table base supporting the chuck table is moved toward a working position. In concert with the movement of the table base, the exposed surface of the additional layer is cut by a bit of a cutting tool rotationally driven by a spindle motor. Thereafter, the exposed surface of the additional layer is polished by a polishing device to planarize the exposed surface of the additional layer.

摘要翻译： 一种用于平坦化形成在半导体晶片的正面上的附加层的半导体晶片处理方法。 首先，在附加层露出的状态下，将晶片保持在包括在切割装置中的卡盘台上，并且支撑卡盘台的台架基座朝向工作位置移动。 与台座的移动一致，附加层的暴露表面被一些由主轴电动机旋转驱动的切割工具切割。 此后，通过抛光装置抛光附加层的暴露表面以使附加层的暴露表面平坦化。