公开(公告)号：US4070284A

公开(公告)日：1978-01-24

申请号：US673529

申请日：1976-04-05

申请人： Kazunori Fujita ,  Seiji Takeuchi ,  Yoshinori Takata ,  Mamoru Taki ,  Yoshimasa Hamano

发明人： Kazunori Fujita ,  Seiji Takeuchi ,  Yoshinori Takata ,  Mamoru Taki ,  Yoshimasa Hamano

IPC分类号： B01D15/08 ,  G01N30/08 ,  G01N30/46 ,  G01N30/60 ,  G01N30/88

CPC分类号： G01N30/08 ,  B01D15/08 ,  B01D15/12 ,  B01D15/361 ,  G01N2030/085 ,  G01N2030/8881 ,  G01N30/461 ,  G01N30/468 ,  G01N30/6004 ,  G01N30/6017

摘要： A definite, but large amount of a sample solution is fed to a small concentration column filled with a packing material to retain in the concentration column components to be measured in the sample solution. Then, a small amount of a desorbing solution is fed to the concentration column to desorb the components retained in the concentration column. The effluent solution containing the desorbed components is fed to a separation column filled with a packing material. An eluting solution is fed to the separation column to separate the components from one another, and the components are detected by a detector.Since the components are separated from one another after their concentrations have been elevated, and thus the components can be measured with a high sensitivity.

摘要翻译： 将一定量但大量的样品溶液供给到填充有填充材料的小浓度柱，以将样品溶液中待测量的浓度列保留在组分中。 然后，将少量解吸溶液加入到浓缩塔中以解吸保留在浓缩塔中的组分。 含有脱附组分的流出液被加入填充有填料的分离塔中。 将洗脱溶液进料到分离塔以将组分彼此分离，并通过检测器检测组分。

公开(公告)号：US4073725A

公开(公告)日：1978-02-14

申请号：US679750

申请日：1976-04-23

申请人： Seiji Takeuchi ,  Kazunori Fujita ,  Ikuo Shimokobe

发明人： Seiji Takeuchi ,  Kazunori Fujita ,  Ikuo Shimokobe

IPC分类号： B01D15/08 ,  G01N30/96

CPC分类号： B01D15/18 ,  B01D15/203 ,  B01D15/361 ,  B01D15/424 ,  G01N30/96

摘要： A sample containing a plurality of components to be analyzed is introduced to a separation column at its top through a sample feeding device. The sample thus introduced is separated to the individual components in the separation column. Ion exchange resins capable of undergoing deformation depending upon an applied pressure are filled in the separation column. An eluting solution containing sodium ions is fed to the separation column at its top under a pressure of 40 kg/cm.sup.2 or higher through a feed pump. Components leaving the separation column at its bottom are detected by a detector. After the components have left the separation column, a regenerating solution containing lithium ions is introduced to the separation column at its bottom, and is made to leave the separation column at its top. The ion exchange resins are regenerated by passing the regenerating solution through the separation column, and a separation for another sample is made ready thereby. Another sample is then introduced into the separation column at its bottom and the separated components of the sample are made to leave the separation column at its top.

摘要翻译： 将待分析的多种成分的样品在其顶部通过样品供给装置引入分离塔。 将如此引入的样品分离成分离塔中的各个组分。 能够根据施加的压力进行变形的离子交换树脂填充在分离塔中。 含有钠离子的洗脱溶液通过进料泵以40kg / cm 2或更高的压力在其顶部进料至分离塔。 通过检测器检测离开分离柱在其底部的组分。 在组分离开分离柱后，将含有锂离子的再生溶液在其底部引入分离塔，并使分离塔离开顶部。 离子交换树脂通过使再生溶液通过分离塔而再生，并且由此准备另一个样品的分离。 然后将另一个样品在其底部引入分离塔，并将样品的分离组分留在顶部的分离塔。

公开(公告)号：US4178270A

公开(公告)日：1979-12-11

申请号：US882334

申请日：1978-02-01

申请人： Kazunori Fujita ,  Seiji Takeuchi ,  Hisao Yamashita ,  Fumito Nakajima

发明人： Kazunori Fujita ,  Seiji Takeuchi ,  Hisao Yamashita ,  Fumito Nakajima

IPC分类号： C09K3/00 ,  A61K33/06 ,  B01J20/32 ,  B01J37/02 ,  B01J39/10 ,  B01J43/00 ,  C02F1/42 ,  C22B60/02 ,  F26B9/00 ,  G21F9/12 ,  C02B1/44

CPC分类号： B01J20/3236 ,  B01J20/0211 ,  B01J20/0288 ,  B01J20/06 ,  B01J20/08 ,  B01J20/103 ,  B01J20/20 ,  B01J20/3078 ,  B01J20/3085 ,  B01J20/3204 ,  B01J39/10 ,  C22B3/24 ,  C22B3/42 ,  C22B60/0265 ,  F26B9/00 ,  B01J2220/58 ,  Y02P10/234

摘要： An inorganic ion-exchanger supported on a carrier suitable for recovery of useful resources in sea water, removal of impurities from high temperature boiler water in nuclear reactors or industrial boilers, removal of impurities in industrial waste water, etc. is prepared by supporting an active component of inorganic ion exchanger, such as hydrous oxide of metal, for example, titanium, zirconium, etc. on a porous carrier such as alumina, silica, or activated carbon, where a pH of a solution in contact with the active component and the carrier is adjusted so that the active component and the carrier can have zeta potentials of opposite polarities to each other, and an inorganic ion-exchanger having a larger amount of the supported active component and firmly supporting less bleedable active component can be obtained by setting out a supporting condition on the basis of the polarity of zeta potential.

摘要翻译： 适用于回收海水中有用资源的载体的无机离子交换剂，核反应堆或工业锅炉中的高温锅炉水中除去杂质，工业废水中杂质的去除等。 无机离子交换剂的组分，例如金属的水合氧化物，例如钛，锆等在多孔载体如氧化铝，二氧化硅或活性炭上，其中与活性组分接触的溶液的pH和 调整载体，使得活性组分和载体可以具有彼此相反极性的ζ电位，并且可以通过设置具有较大量的被负载的活性组分并且牢固地支撑较少可渗透的活性组分的无机离子交换剂 基于ζ电位的极性的支持条件。

公开(公告)号：US4133753A

公开(公告)日：1979-01-09

申请号：US845721

申请日：1977-10-26

申请人： Seiji Takeuchi ,  Kazunori Fujita

发明人： Seiji Takeuchi ,  Kazunori Fujita

IPC分类号： G01N30/02 ,  G01N30/26 ,  G01N30/34 ,  G01N30/88 ,  G01N33/68 ,  B01D15/08

CPC分类号： G01N33/6806

摘要： The separation of constituents is carried out in such a way that a mixed amino acid sample is supplied to a separation column packed with a cation exchange resin and that, during the analysis of the single sample, five sorts of elutes of different compositions are supplied to the separation column in succession and by stages. The pH of the elute at the second stage is held higher than that of the elute at the first stage, and the pH's of the elutes at the third to fifth stages are held successively higher. However, the pH of the elute at the third stage is held lower than that of the elute at the second stage. On the other hand, the concentrations of counter ions contained in the elutes at the first to fifth stages are held successively higher inversely to the order in which the elutes are supplied. Notwithstanding that the pH of the elute at the third stage is lowered, the broadening of a component peak can be prevented by the increase of the counter ion concentration. Moreover, the analytical time is shortened as a whole.

摘要翻译： 成分的分离是以将混合氨基酸样品供给到填充有阳离子交换树脂的分离塔的方式进行的，并且在分析单个样品期间，将五种不同组成的洗脱液供应至 分离柱依次分阶段进行。 第二阶段洗脱液的pH值保持在第一阶段的洗脱液pH值，第三至第五阶段洗脱液的pH值依次保持较高。 然而，第三阶段洗脱液的pH值比第二阶段洗脱液的pH低。 另一方面，包含在第一至第五阶段的洗脱液中的抗衡离子的浓度相对于提供洗脱液的顺序相反地保持更高。 尽管第三阶段的洗脱液的pH降低，但通过增加反离子浓度可以防止成分峰的变宽。 此外，整体上缩短了分析时间。

公开(公告)号：US07655974B2

公开(公告)日：2010-02-02

申请号：US11829310

申请日：2007-07-27

申请人： Satoru Shimada ,  Yoshikazu Yamaoka ,  Kazunori Fujita ,  Tomonori Tabe

发明人： Satoru Shimada ,  Yoshikazu Yamaoka ,  Kazunori Fujita ,  Tomonori Tabe

IPC分类号： H01L29/76

CPC分类号： H01L21/761 ,  H01L21/763 ,  H01L27/088 ,  H01L29/1087 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

摘要： A semiconductor device that reduces the width of an isolation region between semiconductor elements. The semiconductor device includes a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a buried layer formed between the semiconductor substrate and the epitaxial layer, a first trench formed in the epitaxial layer so as to surround the buried layer, and an insulation film formed in the first trench.

摘要翻译： 一种半导体器件，其减小半导体元件之间的隔离区域的宽度。 半导体器件包括半导体衬底，形成在半导体衬底上的外延层，形成在半导体衬底和外延层之间的掩埋层，形成在外延层中以围绕掩埋层的第一沟槽，以及绝缘膜 形成在第一个沟槽。

公开(公告)号：US07361992B2

公开(公告)日：2008-04-22

申请号：US10664875

申请日：2003-09-22

申请人： Naoteru Matsubara ,  Kazunori Fujita

发明人： Naoteru Matsubara ,  Kazunori Fujita

IPC分类号： H01L29/40

CPC分类号： H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： After etching the interlayer dielectric film 4 formed on the lower layer interconnect line 1 into a shape with holes, the upper layer dielectric film 6 is etched into a shape with trenches utilizing the etching stopper 5. The etching stopper 5 which is exposed at the bottom of the trench is removed by additional etching, and then, the interlayer dielectric film 4 which is exposed at the bottom of the trench is etched back to a predetermined thickness. Subsequently, the hole and the trench are filled with an interconnect metal 10.

摘要翻译： 在将下层布线1上形成的层间绝缘膜4蚀刻成具有孔的形状之后，将上层电介质膜6用蚀刻阻挡层5蚀刻成具有沟槽的形状。 通过附加蚀刻去除在沟槽底部暴露的蚀刻阻挡层5，然后将在沟槽底部暴露的层间绝缘膜4回蚀刻到预定厚度。 随后，孔和沟槽填充互连金属10。

公开(公告)号：US06559031B2

公开(公告)日：2003-05-06

申请号：US09960494

申请日：2001-09-24

申请人： Kazunori Fujita

发明人： Kazunori Fujita

IPC分类号： H01L2176

CPC分类号： H01L21/76235

摘要： A method of fabricating a semiconductor device capable of sufficiently rounding an opening upper end of an element isolation trench is obtained. This method of fabricating a semiconductor device comprises steps of forming an element isolation trench on a semiconductor substrate, performing thermal oxidation on at least an opening upper end of the element isolation trench while increasing the atmosphere temperature of the semiconductor substrate beyond a prescribed temperature thereby forming a first oxide film and suppressing formation of the first oxide film on the opening upper end before the atmosphere temperature is increased beyond the prescribed temperature. Thus, the semiconductor substrate is prevented from oxidation under a low temperature, whereby oxidation is more thickly performed by thermal oxidation in a high-temperature region while relaxing stress applied to the semiconductor substrate. Therefore, oxidation is thickly performed in the high-temperature region not reducing the oxidizing velocity for a corner portion, whereby the opening upper end of the element isolation trench can be sufficiently rounded.

公开(公告)号：US4493878A

公开(公告)日：1985-01-15

申请号：US482723

申请日：1983-04-07

申请人： Tatsuo Horiba ,  Kazuo Iwamoto ,  Hidejiro Kawana ,  Kazunori Fujita ,  Kohki Tamura

发明人： Tatsuo Horiba ,  Kazuo Iwamoto ,  Hidejiro Kawana ,  Kazunori Fujita ,  Kohki Tamura

IPC分类号： H01M8/06 ,  H01M8/00 ,  H01M8/04 ,  H01M8/08 ,  H01M6/36

CPC分类号： H01M8/08 ,  H01M8/00 ,  H01M8/04186

摘要： This invention is a fuel element for liquid fuel cell characterized in that a liquid fuel is rendered to assume a non-fluidized state by either physical means or chemical means, and is returned back to the initial liquid fuel at any time by physical means or chemical means.

摘要翻译： 本发明是一种用于液体燃料电池的燃料元件，其特征在于液体燃料通过物理手段或化学方式使其处于非流化状态，并随时通过物理手段或化学物质返回到初始液体燃料 手段。

公开(公告)号：US20080185638A1

公开(公告)日：2008-08-07

申请号：US11965536

申请日：2007-12-27

申请人： Yoshikazu YAMAOKA ,  Satoru Shimada ,  Kazunori Fujita ,  Kazuhiro Sasada

发明人： Yoshikazu YAMAOKA ,  Satoru Shimada ,  Kazunori Fujita ,  Kazuhiro Sasada

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/4236 ,  H01L21/2815 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7809 ,  H01L29/7813

摘要： A semiconductor device capable of inhibiting a fabricating process from complication while inhibiting the dielectric strength voltage of a insulating film from reduction is obtained. This semiconductor device includes a groove portion, an insulating film formed on a surface of the groove portion, a gate electrode and a source impurity region, wherein upper ends of the gate electrode, which are portions in contact with the insulating film, are each located at a position identical with or deeper than the range of an impurity introduced from a surface of a semiconductor substrate with respect to the insulating film in order to form the source impurity region and above a lower surface of the source impurity region.

摘要翻译： 可以获得能够在抑制绝缘膜的介电强度电压降低的同时抑制制造工艺的复杂化的半导体器件。 该半导体器件包括沟槽部分，形成在沟槽部分的表面上的绝缘膜，栅极电极和源极杂质区域，其中栅电极的与绝缘膜接触的部分的上端分别位于 在与半导体衬底的表面相对于绝缘膜引入的杂质的范围相同或更深的位置处，以形成源极杂质区域和源极杂质区域的下表面之上。

公开(公告)号：US20080173924A1

公开(公告)日：2008-07-24

申请号：US11830369

申请日：2007-07-30

申请人： Tomonori TABE ,  Satoru Shimada ,  Kazunori Fujita ,  Yoshikazu Yamaoka

发明人： Tomonori TABE ,  Satoru Shimada ,  Kazunori Fujita ,  Yoshikazu Yamaoka

IPC分类号： H01L27/088 ,  H01L21/283

CPC分类号： H01L29/7813 ,  H01L21/743 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823487 ,  H01L29/0696 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/66734 ,  H01L29/7809

摘要： A semiconductor device that reduces the interval between gate electrodes. The semiconductor device includes a semiconductor substrate, a plurality of gate electrodes buried in the semiconductor substrate, a plurality of first insulation layers arranged respectively on the plurality of gate electrodes, a conductive layer formed on the surface of the semiconductor substrate near the plurality of gate electrodes and the plurality of first insulation layers, and a conductor layer arranged on at least the conductive layer.

摘要翻译： 减小栅电极之间间隔的半导体器件。 半导体器件包括半导体衬底，埋在半导体衬底中的多个栅电极，分别布置在多个栅电极上的多个第一绝缘层，形成在半导体衬底的靠近多个栅极的表面上的导电层 电极和多个第一绝缘层，以及布置在至少导电层上的导体层。