公开(公告)号：US08931524B2

公开(公告)日：2015-01-13

申请号：US13440034

申请日：2012-04-05

申请人： Kazuyoshi Morii ,  Tatsushi Umayahara ,  Yusuke Uchida

发明人： Kazuyoshi Morii ,  Tatsushi Umayahara ,  Yusuke Uchida

IPC分类号： B65B1/10 ,  B65B1/38 ,  G03G15/08

CPC分类号： G03G15/0879 ,  B65B1/10 ,  B65B1/38 ,  G03G15/0865 ,  G03G15/0894 ,  Y10T137/0318 ,  Y10T137/86389

摘要： A fluid transferer, including a volume changing part; a reciprocating member configured to reciprocate to expand a volume of the volume changing part to draw a fluid from an upstream side of a transfer direction and compress the volume thereof to transfer the drawn fluid to a downstream side thereof with pressure; and a drive controller configured to control reciprocation of the reciprocating member such that a time for compressing the volume of the volume changing part is longer than a time for expanding the volume thereof.

摘要翻译： 流体输送器，包括体积变化部分; 往复运动构件，其构造成往复运动以膨胀体积变化部分的体积，以从传送方向的上游侧抽取流体并压缩其体积，以将压缩的流体转移到其下游侧; 以及驱动控制器，被配置为控制往复运动件的往复运动，使得用于压缩体积变化部分的体积的时间比用于扩大其体积的时间长。

公开(公告)号：US08973759B2

公开(公告)日：2015-03-10

申请号：US13418970

申请日：2012-03-13

申请人： Hideo Ichikawa ,  Kaori Ozeki ,  Tatsushi Umayahara ,  Takashi Ono ,  Masayoshi Suzuki ,  Teruo Shibata ,  Keiichi Yano ,  Masato Suzuki ,  Eiichi Masushio ,  Hiroshi Sano ,  Yusuke Uchida ,  Junji Yamabe ,  Seiji Terazawa ,  Masashi Hasegawa

发明人： Hideo Ichikawa ,  Kaori Ozeki ,  Tatsushi Umayahara ,  Takashi Ono ,  Masayoshi Suzuki ,  Teruo Shibata ,  Keiichi Yano ,  Masato Suzuki ,  Eiichi Masushio ,  Hiroshi Sano ,  Yusuke Uchida ,  Junji Yamabe ,  Seiji Terazawa ,  Masashi Hasegawa

IPC分类号： G03G15/08 ,  B07B1/06 ,  B07B1/55 ,  B07B4/08 ,  B07B13/16 ,  B65G65/48 ,  G03G9/08

CPC分类号： B07B1/06 ,  B07B1/55 ,  B07B4/08 ,  B07B13/16 ,  B65G65/48 ,  B65G65/4809 ,  G03G9/08 ,  G03G9/0817

摘要： A sieving device including a hollow cylindrical body, a filter disposed at a bottom portion of the hollow cylindrical body, and a blade configured to rotate in close proximity to the filter around a rotation axis thereof crossing the filter to thereby stir powder supplied to the hollow cylindrical body.

摘要翻译： 一种筛分装置，包括中空圆柱体，设置在中空圆柱体的底部的过滤器和一个叶片，其构造成围绕过滤器的旋转轴线紧邻过滤器旋转，从而搅拌供应到中空的粉末 圆柱体。

公开(公告)号：US20120234735A1

公开(公告)日：2012-09-20

申请号：US13418970

申请日：2012-03-13

申请人： Hideo ICHIKAWA ,  Kaori Ozeki ,  Tatsushi Umayahara ,  Takashi Ono ,  Masayoshi Suzuki ,  Teruo Shibata ,  Keiichi Yano ,  Masato Suzuki ,  Eiichi Masushio ,  Hiroshi Sano ,  Yusuke Uchida ,  Junji Yamabe ,  Seiji Terazawa ,  Masashi Hasegawa

发明人： Hideo ICHIKAWA ,  Kaori Ozeki ,  Tatsushi Umayahara ,  Takashi Ono ,  Masayoshi Suzuki ,  Teruo Shibata ,  Keiichi Yano ,  Masato Suzuki ,  Eiichi Masushio ,  Hiroshi Sano ,  Yusuke Uchida ,  Junji Yamabe ,  Seiji Terazawa ,  Masashi Hasegawa

IPC分类号： B07B1/46

CPC分类号： B07B1/06 ,  B07B1/55 ,  B07B4/08 ,  B07B13/16 ,  B65G65/48 ,  B65G65/4809 ,  G03G9/08 ,  G03G9/0817

摘要： A sieving device including a hollow cylindrical body, a filter disposed at a bottom portion of the hollow cylindrical body, and a blade configured to rotate in close proximity to the filter around a rotation axis thereof crossing the filter to thereby stir powder supplied to the hollow cylindrical body.

摘要翻译： 一种筛分装置，包括中空圆柱体，设置在中空圆柱体的底部的过滤器和一个叶片，其构造成围绕过滤器的旋转轴线紧邻过滤器旋转，从而搅拌供应到中空的粉末 圆柱体。

公开(公告)号：US08699803B2

公开(公告)日：2014-04-15

申请号：US13033659

申请日：2011-02-24

申请人： Yukari Katayama ,  Akihito Akai ,  Yoshiki Kurokawa ,  Yusuke Uchida

发明人： Yukari Katayama ,  Akihito Akai ,  Yoshiki Kurokawa ,  Yusuke Uchida

IPC分类号： G06K9/36

CPC分类号： G09G3/3648 ,  G09G2320/0252 ,  G09G2320/0261 ,  G09G2320/0686 ,  G09G2320/103 ,  G09G2340/02 ,  G09G2340/16 ,  H04N19/124 ,  H04N19/146 ,  H04N19/172 ,  H04N19/42 ,  H04N19/60

摘要： The display driving circuit includes: an OD (OverDrive) calculation circuit operable to generate an OD driving signal for improving the response characteristic of a display device according to display image data; a drive-output circuit operable to supply an OD driving signal to the display device; and a compression circuit operable to store compressed display data in a memory. The compression circuit includes a DCT calculation module operable to execute DCT (Discrete Cosine Transform) of display image data, and an entropy coding module operable to execute variable length entropy coding of DCT conversion display data. Preferably, the display driving circuit further includes a decompression circuit operable to supply an OD calculation circuit with display data resulting from decompression of compressed display data read out the memory.

摘要翻译： 显示驱动电路包括：OD（OverDrive）计算电路，用于根据显示图像数据产生用于改善显示装置的响应特性的OD驱动信号; 驱动输出电路，其可操作以向所述显示装置提供OD驱动信号; 以及可操作以将压缩显示数据存储在存储器中的压缩电路。 压缩电路包括可以执行显示图像数据的DCT（离散余弦变换）的DCT计算模块和可操作以执行DCT变换显示数据的可变长度熵编码的熵编码模块。 优选地，显示驱动电路还包括解压缩电路，其可操作以向OD计算电路提供由对存储器读出的压缩显示数据的解压缩而得到的显示数据。

公开(公告)号：US20090152563A1

公开(公告)日：2009-06-18

申请号：US12333454

申请日：2008-12-12

申请人： Masami Hayashi ,  Yusuke Uchida

发明人： Masami Hayashi ,  Yusuke Uchida

IPC分类号： H01L31/112 ,  H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14692

摘要： The present invention prevents disconnection of a source electrode and a drain electrode, taking account of adhesion with amorphous silicon. A photo-sensor according to the present invention is a photo-sensor having a TFT array substrate that has an element region in which thin film transistors are arranged in an array, the photo-sensor comprising a passivation film which is provided above the thin film transistor and in which a contact hole is formed, and a photo-diode which is connected to a drain electrode of the thin film transistor via the contact hole, wherein the passivation film and a gate insulation film are removed in the peripheral area outside the element region of the TFT array substrate, and the edge of the passivation film in the peripheral area is formed at the same position as the edge of the gate insulation film on the periphery of the substrate, or outside the edge of the gate insulation film.

摘要翻译： 考虑到与非晶硅的粘合性，本发明防止源电极和漏电极断开。 根据本发明的光传感器是具有TFT阵列基板的光传感器，TFT阵列基板具有以阵列形式布置薄膜晶体管的元件区域，光传感器包括设置在薄膜上方的钝化膜 晶体管，并且其中形成接触孔;以及光电二极管，其通过接触孔连接到薄膜晶体管的漏电极，其中钝化膜和栅绝缘膜在元件外部的外围区域中被去除 区域，并且周边区域中的钝化膜的边缘形成在与基板的周边上的栅极绝缘膜的边缘或栅极绝缘膜的边缘的外侧相同的位置处。

公开(公告)号：US20050239239A1

公开(公告)日：2005-10-27

申请号：US11109852

申请日：2005-04-20

申请人： Shoichi Takanabe ,  Tadaki Nakahori ,  Yusuke Uchida

发明人： Shoichi Takanabe ,  Tadaki Nakahori ,  Yusuke Uchida

IPC分类号： H01L21/336 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： There is provided a thin-film transistor being capable of reducing dispersion in threshold voltage and a method of fabricating the same. The thin-film transistor includes an insulating undercoating layer formed for a substrate, a semiconductor active layer of polycrystalline silicon formed on the insulating undercoating layer, and a gate electrode formed insulated on the semiconductor active layer, the insulating undercoating layer being of a silicon oxide film layer formed using TEOS as a material and by a plasma CVD method. Preferably, the concentration of carbon atoms of the silicon oxide film layer is within a range of 6×1019 atoms/cm3 to 1×1020 atoms/cm3 and the concentration of nitride atoms is not more than 3×1019 atoms/cm3.

摘要翻译： 提供了能够降低阈值电压的偏差的薄膜晶体管及其制造方法。 薄膜晶体管包括形成在基板上的绝缘底涂层，形成在绝缘底涂层上的多晶硅半导体有源层和在半导体有源层上形成绝缘的栅电极，绝缘底涂层为氧化硅 使用TEOS作为材料形成的膜层，通过等离子体CVD法形成。 优选地，氧化硅膜层的碳原子浓度在6×10 19原子/ cm 3至1×10 20原子/ cm 3，氮化物原子的浓度不大于3×10 19原子/ cm 3。

公开(公告)号：US08005028B2

公开(公告)日：2011-08-23

申请号：US12310835

申请日：2007-08-30

申请人： Eisaburo Itakura ,  Sei Sunahara ,  Yutaka Takahashi ,  Shoji Kasahara ,  Hiroyuki Masuyama ,  Yusuke Uchida

发明人： Eisaburo Itakura ,  Sei Sunahara ,  Yutaka Takahashi ,  Shoji Kasahara ,  Hiroyuki Masuyama ,  Yusuke Uchida

IPC分类号： H04B7/005

CPC分类号： H04L1/1812 ,  H04L1/1657 ,  H04L1/1854 ,  H04L1/1887

摘要： A probe transmitting section (216) in a packet receiving terminal (210) sends a probe packet to a second radio channel (320) at fixed intervals. A probe analyzing section (117) in a packet sending terminal (110) detects a burst loss on the basis of a state of reception of the probe packet. When a burst loss detection is detected, a predictive retransmission control section (118) predicts that a data packet transmitted during the period of the detected burst loss among data packets sent from a priority processing transmission buffer (115) to a first radio channel (310) is a data packet lost on a receiving side, reads the data packet from a retransmission buffer (114), and then sends the data packet to the priority processing transmission buffer (115). A real-time property can be ensured while a packet loss is overcome in a radio environment.

摘要翻译： 分组接收终端（210）中的探测发射部分（216）以固定的间隔向第二无线电信道（320）发送探测分组。 分组发送终端（110）中的探测分析部（117）根据探测分组的接收状态来检测突发丢失。 当检测到突发丢失检测时，预测重传控制部（118）预测在从优先处理发送缓冲器（115）发送到第一无线信道（310）的数据分组中检测到的突发丢失期间发送的数据分组 ）是在接收侧丢失的数据分组，从重传缓冲器（114）读取数据分组，然后将数据分组发送到优先处理传输缓冲器（115）。 在无线电环境中克服丢包时，可以确保实时性。

公开(公告)号：US20090159884A1

公开(公告)日：2009-06-25

申请号：US12335806

申请日：2008-12-16

申请人： Koji ODA ,  Naoki Nakagawa ,  Takeshi Ono ,  Yusuke Uchida

发明人： Koji ODA ,  Naoki Nakagawa ,  Takeshi Ono ,  Yusuke Uchida

IPC分类号： H01L29/78 ,  H01L21/02

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.

摘要翻译： 根据本发明的实施例的制造薄膜晶体管的方法包括在栅电极上形成栅极绝缘体的步骤。 栅极绝缘体至少包括与氢化非晶硅膜接触的第一区域和位于第一区域下方的第二区域。 使用包括NH 3，N 2和SiH 4，H 2气体或H 2和He的混合物的源气体来沉积第一和第二区域。 通过将流量比NH3 / SiH4设定在11〜14的范围内来沉积第一区域，并且通过将流量比NH3 / SiH4设定为等于或小于4来沉积第二区域。因此 可以提供具有优异特性和高可靠性的薄膜晶体管，其制造方法以及安装在其上的薄膜晶体管的显示装置。

公开(公告)号：US06920122B1

公开(公告)日：2005-07-19

申请号：US09544479

申请日：2000-04-07

申请人： Seishi Hanaoka ,  Yusuke Uchida ,  Nobukazu Doi

发明人： Seishi Hanaoka ,  Yusuke Uchida ,  Nobukazu Doi

IPC分类号： H04W16/10 ,  H04W16/28 ,  H04W36/18 ,  H04W88/08 ,  H04Q7/00

CPC分类号： H04W88/08 ,  H04W16/10 ,  H04W16/28 ,  H04W28/16 ,  H04W36/18

摘要： A control method of assigning a channel so as to cope flexibly with voice and high speed data communication services having different transmission rates in code-division multiple connection communications. A load required for a channel processing is compared with an allowable load, and a channel is assigned within the allowable load. When assignment of a busy channel is changed so as to be processed in another hardware, the synchronization of the processing is established first at the destination, then the channel is switched. It is thus possible to distribute hardware resources and software processings efficiently to users.

摘要翻译： 一种分配信道以便在代码分割多连接通信中具有不同传输速率的语音和高速数据通信业务灵活应对的控制方法。 将通道处理所需的负载与允许负载进行比较，并在允许的负载内分配通道。 当忙信道的分配被改变以在另一硬件中被处理时，首先在目的地建立处理的同步，然后切换信道。 因此可以有效地向用户分配硬件资源和软件处理。

公开(公告)号：US08269908B2

公开(公告)日：2012-09-18

申请号：US12335806

申请日：2008-12-16

申请人： Koji Oda ,  Naoki Nakagawa ,  Takeshi Ono ,  Yusuke Uchida

发明人： Koji Oda ,  Naoki Nakagawa ,  Takeshi Ono ,  Yusuke Uchida

IPC分类号： G02F1/136

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.

摘要翻译： 根据本发明的实施例的制造薄膜晶体管的方法包括在栅电极上形成栅极绝缘体的步骤。 栅极绝缘体至少包括与氢化非晶硅膜接触的第一区域和位于第一区域下方的第二区域。 使用包括NH 3，N 2和SiH 4，H 2气体或H 2和He的混合物的源气体来沉积第一和第二区域。 通过将流量比NH3 / SiH4设定在11〜14的范围内来沉积第一区域，并且通过将流量比NH3 / SiH4设定为等于或小于4来沉积第二区域。因此 可以提供具有优异特性和高可靠性的薄膜晶体管，其制造方法以及安装在其上的薄膜晶体管的显示装置。