公开(公告)号：US5840432A

公开(公告)日：1998-11-24

申请号：US598701

申请日：1996-02-08

申请人： Keizo Hirai ,  Hiroshi Wada ,  Akihiro Sasaki ,  Hisashi Kaga ,  Junichi Kikuchi ,  Shozo Yamana ,  Hideji Kuwajima

发明人： Keizo Hirai ,  Hiroshi Wada ,  Akihiro Sasaki ,  Hisashi Kaga ,  Junichi Kikuchi ,  Shozo Yamana ,  Hideji Kuwajima

IPC分类号： B22F1/00 ,  B22F1/02 ,  H01B1/02 ,  H01B1/16 ,  H01B1/22 ,  H01L23/498 ,  H05K1/09 ,  B22F3/00

CPC分类号： B22F1/0055 ,  B22F1/0007 ,  B22F1/0059 ,  B22F1/025 ,  H01B1/02 ,  H01B1/16 ,  H01B1/22 ,  H01L23/49883 ,  H05K1/092 ,  H05K1/095 ,  B22F2009/041 ,  B22F2009/043 ,  B22F2998/00 ,  B22F2999/00 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12181 ,  Y10T428/12493 ,  Y10T428/12715 ,  Y10T428/12868 ,  Y10T428/24917 ,  Y10T428/24926

摘要： Electroconductive composite metal powders comprising flat non-noble metal powders, each covered with a noble metal in an amount of 2 to 30% by weight in average based on the weight of the non-noble metal powders, on 50% or more in average of the whole surface area of the non-noble metal powders, interposing a layer of a mixture of the non-noble metal and noble metal between each non-noble metal powder and a noble metal covering layer, are suitable for providing an electroconductive paste after mixing with a binder, said paste showing excellent electroconductivity and prevention of migration.

摘要翻译： 包含平坦非贵金属粉末的导电复合金属粉末，平均非贵金属粉末的平均非贵金属粉末的平均重量平均为2〜30重量％，平均为非贵金属粉末的重量的50重量％以上 在非贵金属粉末和贵金属覆盖层之间插入非贵金属和贵金属的混合物层的非贵金属粉末的整个表面积适于在混合之后提供导电浆料 使用粘合剂，所述糊状物显示出优异的导电性并防止迁移。

公开(公告)号：US06042933A

公开(公告)日：2000-03-28

申请号：US133853

申请日：1998-08-13

申请人： Keizo Hirai ,  Hiroshi Wada ,  Akihiro Sasaki ,  Hisashi Kaga ,  Junichi Kikuchi ,  Shozo Yamana ,  Hideji Kuwajima

发明人： Keizo Hirai ,  Hiroshi Wada ,  Akihiro Sasaki ,  Hisashi Kaga ,  Junichi Kikuchi ,  Shozo Yamana ,  Hideji Kuwajima

IPC分类号： B22F1/00 ,  B22F1/02 ,  H01B1/02 ,  H01B1/16 ,  H01B1/22 ,  H01L23/498 ,  H05K1/09 ,  B32B3/00 ,  B22F3/00

CPC分类号： B22F1/0055 ,  B22F1/0007 ,  B22F1/0059 ,  B22F1/025 ,  H01B1/02 ,  H01B1/16 ,  H01B1/22 ,  H01L23/49883 ,  H05K1/092 ,  H05K1/095 ,  B22F2009/041 ,  B22F2009/043 ,  B22F2998/00 ,  B22F2999/00 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12181 ,  Y10T428/12493 ,  Y10T428/12715 ,  Y10T428/12868 ,  Y10T428/24917 ,  Y10T428/24926

摘要： Electroconductive composite metal powders comprising flat non-noble metal powders, each covered with a noble metal in an amount of 2 to 30% by weight in average based on the weight of the non-noble metal powders, on 50% or more in average of the whole surface area of the non-noble metal powders, interposing a layer of a mixture of the non-noble metal and noble metal between each non-noble metal powder and a noble metal covering layer, are suitable for providing an electroconductive paste after mixing with a binder, said paste showing excellent electroconductivity and prevention of migration.

摘要翻译： 包含平坦非贵金属粉末的导电复合金属粉末，平均非贵金属粉末的平均非贵金属粉末的平均重量平均为2〜30重量％，平均为非贵金属粉末的重量的50重量％以上 在非贵金属粉末和贵金属覆盖层之间插入非贵金属和贵金属的混合物层的非贵金属粉末的整个表面积适于在混合之后提供导电浆料 使用粘合剂，所述糊状物显示出优异的导电性并防止迁移。

公开(公告)号：US06372859B1

公开(公告)日：2002-04-16

申请号：US09424550

申请日：1999-11-26

申请人： Touichi Sakata ,  Hiroshi Nishizawa ,  Keizo Hirai ,  Kenji Suzuki

发明人： Touichi Sakata ,  Hiroshi Nishizawa ,  Keizo Hirai ,  Kenji Suzuki

IPC分类号： C08L7700

CPC分类号： C09J9/00 ,  H01L23/4951 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A thermoresistance adhesive which does not dissolve in the sealer-composing resins at the sealer molding temperature and is capable of providing a semiconductor chip/lead frame adhesive strength under shear of 1 N/4 mm2 or greater, and including, for example, amide, imide, ester or ether linkage is suited for use in producing thermoresistance adhesive solutions and thermoresistance resin pastes, and the semiconductor chips, lead frames, films, etc., made by using such an adhesive are suited for providing low-cost semiconductor devices.

摘要翻译： 一种热封粘合剂，其在密封件成型温度下不溶解在密封剂组合树脂中，并且能够在1N / 4mm 2或更大的剪切下提供半导体芯片/引线框架粘合强度，并且包括例如酰胺， 酰亚胺，酯或醚键适用于生产耐热粘合剂溶液和耐热树脂浆料，并且使用这种粘合剂制成的半导体芯片，引线框架，薄膜等适于提供低成本的半导体器件。

公开(公告)号：US20050118820A1

公开(公告)日：2005-06-02

申请号：US10990427

申请日：2004-11-18

申请人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

发明人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

IPC分类号： B24B37/00 ,  B24B37/04 ,  B24D3/34 ,  B44C1/22 ,  C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/461

CPC分类号： B24D3/34 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

公开(公告)号：US07163644B2

公开(公告)日：2007-01-16

申请号：US10990427

申请日：2004-11-18

申请人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

发明人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

IPC分类号： C09K13/00

CPC分类号： B24D3/34 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

摘要翻译： 包含含有氧化铈颗粒的氧化铈浆料，分散剂和水以及含有分散剂和水的液体添加剂的CMP研磨剂; 和用于CMP研磨剂的液体添加剂。 一种用于抛光衬底的方法，其包括将其上形成有待研磨的膜的衬底保持在研磨台板的抛光垫上，随后按压并移动所述衬底和所述研磨台板，同时在其间提供上述CMP磨料 要抛光的膜和抛光垫，从而抛光待抛光的膜。 CMP研磨剂和抛光方法可用于抛光硅氧烷膜或氮化硅膜等抛光表面，而不会用钠离子等碱金属污染待抛光表面，而且不会产生缺陷， CMP研磨剂的储存稳定性优异。

公开(公告)号：US20060197054A1

公开(公告)日：2006-09-07

申请号：US11407195

申请日：2006-04-20

申请人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

发明人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

IPC分类号： C09K13/00 ,  C09K13/06

CPC分类号： B24D3/34 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

摘要翻译： 包含含有氧化铈颗粒的氧化铈浆料，分散剂和水以及含有分散剂和水的液体添加剂的CMP研磨剂; 和用于CMP研磨剂的液体添加剂。 一种用于抛光衬底的方法，其包括将其上形成有待研磨的膜的衬底保持在研磨台板的抛光垫上，随后按压并移动所述衬底和所述研磨台板，同时在其间提供上述CMP磨料 要抛光的膜和抛光垫，从而抛光待抛光的膜。 CMP研磨剂和抛光方法可用于抛光硅氧烷膜或氮化硅膜等抛光表面，而不会用钠离子等碱金属污染待抛光表面，而且不会产生缺陷， CMP研磨剂的储存稳定性优异。

公开(公告)号：US20060186372A1

公开(公告)日：2006-08-24

申请号：US11407196

申请日：2006-04-20

申请人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

发明人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

IPC分类号： C09K13/00

CPC分类号： B24D3/34 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

公开(公告)号：US20050269295A1

公开(公告)日：2005-12-08

申请号：US11177352

申请日：2005-07-11

申请人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

发明人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

IPC分类号： B24B37/00 ,  B24B37/04 ,  B24D3/34 ,  B44C1/22 ,  C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/302 ,  H01L21/3105

CPC分类号： B24D3/34 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

摘要翻译： 包含含有氧化铈颗粒的氧化铈浆料，分散剂和水以及含有分散剂和水的液体添加剂的CMP研磨剂; 和用于CMP研磨剂的液体添加剂。 一种用于抛光衬底的方法，其包括将其上形成有待研磨的膜的衬底保持在研磨台板的抛光垫上，随后按压并移动所述衬底和所述研磨台板，同时在其间提供上述CMP磨料 要抛光的膜和抛光垫，从而抛光待抛光的膜。 CMP研磨剂和抛光方法可用于抛光硅氧烷膜或氮化硅膜等抛光表面，而不会用钠离子等碱金属污染待抛光表面，而且不会产生缺陷， CMP研磨剂的储存稳定性优异。

公开(公告)号：US06783434B1

公开(公告)日：2004-08-31

申请号：US09856491

申请日：2001-06-19

申请人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

发明人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

IPC分类号： B24B100

CPC分类号： B24D3/34 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

摘要翻译： 包含含有氧化铈颗粒的氧化铈浆料，分散剂和水以及含有分散剂和水的液体添加剂的CMP研磨剂; 和用于CMP研磨剂的液体添加剂。 一种用于抛光衬底的方法，其包括将其上形成有待研磨的膜的衬底保持在研磨台板的抛光垫上，随后按压并移动所述衬底和所述研磨台板，同时在其间提供上述CMP磨料 要抛光的膜和抛光垫，从而抛光待抛光的膜。 CMP研磨剂和抛光方法可用于抛光硅氧烷膜或氮化硅膜等抛光表面，而不会用钠离子等碱金属污染待抛光表面，而且不会产生缺陷， CMP研磨剂的储存稳定性优异。