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公开(公告)号：US08880217B2
公开(公告)日：2014-11-04
申请号：US13337818
申请日：2011-12-27
CPC分类号： G06K9/34
摘要： A picking system includes a conveyer, a robot, a main camera, and a control device. The conveyer conveys workpieces. The robot performs a holding operation and a moving operation on the workpieces. The main camera captures the transport path of the conveyer. The control device detects the workpiece on the basis of the image captured by the main camera and instructs the robot to perform the holding operation on the detected workpiece. Moreover, the control device instructs the robot to perform the holding operation on the overlapped workpieces when the overlapping of the workpieces is detected.
摘要翻译： 拾取系统包括输送机，机器人，主摄像机和控制装置。 输送机输送工件。 机器人对工件执行保持操作和移动操作。 主相机捕获输送机的输送路径。 控制装置基于由主摄像机拍摄的图像来检测工件，并指示机器人对检测到的工件执行保持操作。 此外，当检测到工件的重叠时，控制装置指示机器人对重叠的工件执行保持操作。
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公开(公告)号：US07303973B2
公开(公告)日：2007-12-04
申请号：US10630444
申请日：2003-07-29
申请人： Kenichi Koyanagi , Hiroshi Sakuma
发明人： Kenichi Koyanagi , Hiroshi Sakuma
IPC分类号： H01L21/20
CPC分类号： H01L21/0228 , H01L21/02175 , H01L21/31604 , H01L21/31683 , H01L27/10808 , H01L27/10852 , H01L28/91
摘要： Provided is a method for manufacturing a semiconductor device, including a dual-stage deposition step including: a first stage for introducing tantalum penta-ethoxide containing tantalum as a material gas into a reaction chamber in which a semiconductor substrate on a surface of which a lower electrode is made of ruthenium is placed to thus form a tantalum oxide film by a vapor-phase growth method such as a chemical vapor deposition method and the following second stage for removing from the reaction chamber the material gas introduced into the reaction chamber at the first stage and a byproduct produced at the first stage by introducing a nitrogen gas, and wherein the tantalum oxide film is formed on the semiconductor substrate, by repeating the dual-stage deposition step two or more times.
摘要翻译： 本发明提供一种半导体装置的制造方法，其特征在于，包括：第一阶段，将含有钽的钽五乙酸盐作为原料气体引入反应室，其中表面上的半导体衬底的下层 电极由钌制成，由此通过气相生长法如化学气相沉积法形成氧化钽膜，以及随后的第二阶段，用于从反应室除去在第一个反应室中引入反应室的原料气体 通过引入氮气在第一阶段产生副产物，并且其中通过重复两级沉积步骤两次或更多次在半导体衬底上形成氧化钽膜。
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3.发明申请MEMORY WITH MEMORY CELLS THAT INCLUDE A MIM TYPE CAPACITOR WITH A LOWER ELECTRODE MADE FOR REDUCED RESISTANCE AT AN INTERFACE WITH A METAL FILM 审中-公开具有存储器电池的存储器，其包括具有用于在具有金属膜的接口下具有降低电阻的较低电极的MIM型电容器公开(公告)号：US20070148896A1
公开(公告)日：2007-06-28
申请号：US11563442
申请日：2006-11-27
申请人： Yoshitaka Nakamura , Hidekazu Goto , Isamu Asano , Mitsuhiro Horikawa , Keiji Kuroki , Hiroshi Sakuma , Kenichi Koyanagi , Tsuyoshi Kawagoe
发明人： Yoshitaka Nakamura , Hidekazu Goto , Isamu Asano , Mitsuhiro Horikawa , Keiji Kuroki , Hiroshi Sakuma , Kenichi Koyanagi , Tsuyoshi Kawagoe
IPC分类号： H01L21/20
CPC分类号： H01L28/65 , H01L21/7687 , H01L27/10814 , H01L27/10852
摘要： A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.
摘要翻译： 一种半导体器件包括各自具有形成在半导体衬底的一个主表面上的用于存储器选择的MISFET的存储单元，以及由用于存储器选择的MISFET的源极和漏极的底部电连接到下部电极的电容元件 经由电容绝缘膜经由形成在下电极上的第一金属层和上电极。 下部电极的底部的厚度为30nm以上。 具有高电离比和高方向性的溅射（例如PCM）适于形成下电极，以使电容器的底部仅较厚。
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公开(公告)号：US20070051310A1
公开(公告)日：2007-03-08
申请号：US11511507
申请日：2006-08-29
申请人： Kenichi Koyanagi
发明人： Kenichi Koyanagi
IPC分类号： C23C16/00
CPC分类号： C23C16/45546 , C23C16/4412 , C23C16/45527 , C23C16/45578
摘要： A semiconductor manufacturing apparatus has a nozzle with a plurality of tiny holes. The nozzle Is connected to a vacuum pump through a valve without closing its end so as to be evacuated and purged independently of the reaction chamber.
摘要翻译： 半导体制造装置具有具有多个微小孔的喷嘴。 喷嘴通过阀门连接到真空泵，而不关闭其端部，以便独立于反应室进行抽真空和净化。
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5.发明授权Method for manufacturing semiconductor storage device comprising a slow cooling step 失效一种制造半导体存储装置的方法，包括缓慢冷却步骤公开(公告)号：US07763500B2
公开(公告)日：2010-07-27
申请号：US11498129
申请日：2006-08-03
IPC分类号： H01L21/335 , H01L21/8232
CPC分类号： H01L28/40 , H01L27/10852 , H01L28/84
摘要： First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (Al2O3) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.
摘要翻译： 首先，准备设置有存储单元的主要部分的基底结构，然后在基底结构上形成包括多晶硅膜的下部电极。 接下来，将下电极的表面在预定温度下热氮化，以形成氮化硅膜。 在下电极的热氮化中，将温度升高到预定的氮化温度，之后以比通常更渐进的速度降低温度。 此后，在下电极上形成作为电容绝缘膜的氧化铝（Al2O3）或其他金属氧化物电介质膜，在电容绝缘膜上形成上电极。
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公开(公告)号：US07741173B2
公开(公告)日：2010-06-22
申请号：US11746185
申请日：2007-05-09
申请人： Kenichi Koyanagi , Hiroshi Sakuma
发明人： Kenichi Koyanagi , Hiroshi Sakuma
IPC分类号： H01L21/8242
CPC分类号： H01L21/02271 , C23C16/405 , C23C16/45525 , H01L21/02175 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/3141 , H01L21/31637 , H01L27/10852 , H01L28/84 , H01L28/90
摘要： A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.
摘要翻译： 一种形成电容器绝缘膜的方法包括通过提供包括金属和不含氧的金属源沉积由金属制成的单原子膜并通过CVD技术沉积包括金属的金属氧化物膜的步骤。 该方法提供具有较高膜特性并具有较高生产量的金属氧化物膜。
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公开(公告)号：US20070205452A1
公开(公告)日：2007-09-06
申请号：US11746185
申请日：2007-05-09
申请人： Kenichi Koyanagi , Hiroshi Sakuma
发明人： Kenichi Koyanagi , Hiroshi Sakuma
IPC分类号： H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L21/02271 , C23C16/405 , C23C16/45525 , H01L21/02175 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/3141 , H01L21/31637 , H01L27/10852 , H01L28/84 , H01L28/90
摘要： A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.
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8.发明授权Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal film 有权具有存储单元的存储器，其包括具有用于在与金属膜的界面处降低的电阻的下电极的MIM型电容器公开(公告)号：US07224016B2
公开(公告)日：2007-05-29
申请号：US10777704
申请日：2004-02-13
申请人： Yoshitaka Nakamura , Hidekazu Goto , Isamu Asano , Mitsuhiro Horikawa , Keiji Kuroki , Hiroshi Sakuma , Kenichi Koyanagi , Tsuyoshi Kawagoe
发明人： Yoshitaka Nakamura , Hidekazu Goto , Isamu Asano , Mitsuhiro Horikawa , Keiji Kuroki , Hiroshi Sakuma , Kenichi Koyanagi , Tsuyoshi Kawagoe
IPC分类号： H01L21/8242
CPC分类号： H01L28/65 , H01L21/7687 , H01L27/10814 , H01L27/10852
摘要： A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.
摘要翻译： 一种半导体器件包括各自具有形成在半导体衬底的一个主表面上的用于存储器选择的MISFET的存储单元，以及由用于存储器选择的MISFET的源极和漏极的底部电连接到下部电极的电容元件 经由电容绝缘膜经由形成在下电极上的第一金属层和上电极。 下部电极的底部的厚度为30nm以上。 具有高电离比和高方向性的溅射（例如PCM）适于形成下电极，以使电容器的底部仅较厚。
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公开(公告)号：US20070032034A1
公开(公告)日：2007-02-08
申请号：US11498129
申请日：2006-08-03
IPC分类号： H01L21/20
CPC分类号： H01L28/40 , H01L27/10852 , H01L28/84
摘要： First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (Al2O3) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.
摘要翻译： 首先，准备设置有存储单元的主要部分的基底结构，然后在基底结构上形成包括多晶硅膜的下部电极。 接下来，将下电极的表面在预定温度下热氮化，以形成氮化硅膜。 在下电极的热氮化中，将温度升高到预定的氮化温度，之后以比通常更渐进的速度降低温度。 然后在下电极上形成氧化铝（Al 2 O 3 3）或其它金属氧化物电介质膜作为电容绝缘膜，并且上电极形成在电容 绝缘膜。
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公开(公告)号：US08880216B2
公开(公告)日：2014-11-04
申请号：US13338169
申请日：2011-12-27
IPC分类号： G06F7/00 , B25J9/16 , G05B19/418
CPC分类号： G05B19/4182 , B25J9/1697 , Y02P90/083
摘要： A picking system includes a conveyer, a robot, and a control device. The conveyer conveys workpieces. The robot includes a plurality of holding parts and a supporting part. The holding parts hold the workpieces. The supporting part is rotatably provided against an arm to support the plurality of holding parts. Then, the control device instructs the robot to rotate the supporting part by a predetermined amount in such a manner that the direction of the workpiece becomes a predetermined direction for each the workpiece held by the holding parts and then to place the workpiece on a predetermined place.
摘要翻译： 拾取系统包括输送机，机器人和控制装置。 输送机输送工件。 机器人包括多个保持部和支撑部。 夹持件夹持工件。 支撑部分可旋转地设置成抵靠臂以支撑多个保持部。 然后，控制装置指示机器人使支撑部旋转预定量，使得对于由保持部保持的每个工件，工件的方向成为预定方向，然后将工件放置在预定位置 。
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