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95 条记录 (耗时 0.037 秒)

    Method for sputtering multi-component thin-film
    1.
    发明授权
    Method for sputtering multi-component thin-film 失效
    溅射多组分薄膜的方法

    公开(公告)号：US4731172A

    公开(公告)日：1988-03-15

    申请号：US856783

    申请日：1986-04-17

    申请人： Hideaki Adachi ,  Hidetaka Higashino ,  Tsuneo Mitsuyu ,  Osamu Yamazaki

    发明人： Hideaki Adachi ,  Hidetaka Higashino ,  Tsuneo Mitsuyu ,  Osamu Yamazaki

    IPC分类号： C23C14/02 ,  C23C14/08 ,  C23C14/22 ,  C23C14/35 ,  H01L21/314 ,  H01L21/316 ,  C23C14/34

    CPC分类号： C23C14/225 ,  C23C14/024 ,  C23C14/088 ,  C23C14/352 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/31691

    摘要： A underlying layer of multi-component material of a first formula is deposited on a substrate by controlling the amounts of sputtering materials evaporated respectively from a plurality of sputtering sources. A transition layer of multi-component material is subsequently formed on the underlying layer by controlling the amounts of the sputtering materials so that the transition layer is given a second, variable formula varying in a range from the first formula at the boundary between the underlying layer and the transition layer to a third formula. An overlying layer of multi-component material of the third formula is subsequently formed on the transition layer by controlling the amounts of the sputtering materials. Specifically, the first formula is [Pb.sub.1-(x/100) La.sub.x/100 ][Zr.sub.y/100 Ti.sub.z/100 ].sub.w O.sub.3, in which 10.ltoreq.x.ltoreq.40, y.ltoreq.5, w=1-(x/400) and y+z=100, and the third formula is [Pb.sub.1-(X/100) La.sub.X/100 ] [Zr.sub.Y/100 Ti.sub.Z/100 ].sub.W O.sub.3, in which X.ltoreq.20, 40.ltoreq.Y.ltoreq.90, W=1-(X/400) and Y+Z=100.

    摘要翻译： 通过控制分别从多个溅射源蒸发的溅射材料的量，将第一配方的多组分材料的下层沉积在基板上。 随后通过控制溅射材料的量，在底层上形成多组分材料的过渡层，使得过渡层被赋予第二个可变公式，其变化范围从第一公式在下层 和过渡层到第三个公式。 随后通过控制溅射材料的量在过渡层上形成第三配方的多组分材料的上覆层。 具体地说，第一公式为[Pb1-（x / 100）Lax / 100] [Zry / 100Tiz / 100] wO3，其中10≤x≤40，y = 5，w = 1-（ x / 400）和y + z = 100，第三式为[Pb1-（X / 100）LaX / 100] [ZrY / 100TiZ / 100] WO3，其中X = 20,40 <

    Tunnel-type Josephson element and method for manufacturing the same
    5.
    发明授权
    Tunnel-type Josephson element and method for manufacturing the same 失效
    隧道式约瑟夫逊元件及其制造方法

    公开(公告)号：US5856204A

    公开(公告)日：1999-01-05

    申请号：US721976

    申请日：1996-09-27

    申请人： Masahiro Sakai ,  Hidetaka Higashino ,  Hideaki Adachi ,  Kentaro Setsune

    发明人： Masahiro Sakai ,  Hidetaka Higashino ,  Hideaki Adachi ,  Kentaro Setsune

    IPC分类号： H01L39/22 ,  H01L21/00

    CPC分类号： H01L39/225

    摘要： A plurality of single crystal grains made of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 which are heat treated at a temperature that is equal to or higher than the crystallization temperature of an oxide high-temperature superconductor made of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 and are surrounded by a grain boundary are formed on a substrate made of a MgO single crystal. A convex portion having a sectional area of 400 .mu.m.sup.2 or less and a height which is equal to or less than ten times as much as a space between block layers of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 is formed on the upper face portion of the single crystal grain. A first electrode made of Au is formed on the upper face of the convex portion of the single crystal grain, and a second electrode is formed in a region other than the convex portion in the single crystal grain. The first electrode is insulated from the second electrode by an insulating film made of CaF.sub.2.

    摘要翻译： 由Bi2Sr2Ca1Cu2O8制成的多个由Bi2Sr2Ca1Cu2O8构成的氧化物高温超导体的晶化温度以上的温度进行热处理并被晶界包围的单晶粒子形成在由 MgO单晶。 在单晶粒的上表面上形成有截面积为400μm或更小的凸部，其高度等于或小于Bi2Sr2Ca1Cu2O8的阻挡层之间的间隔的十倍。 在单晶粒的凸部的上表面上形成由Au构成的第一电极，在单晶粒的凸部以外的区域形成第二电极。 第一电极通过由CaF 2制成的绝缘膜与第二电极绝缘。

    ACTUATOR AND METHOD FOR DRIVING ACTUATOR
    10.
    发明申请
    ACTUATOR AND METHOD FOR DRIVING ACTUATOR 有权
    执行器和驱动执行器的方法

    公开(公告)号：US20120043857A1

    公开(公告)日：2012-02-23

    申请号：US13282089

    申请日：2011-10-26

    申请人： Michihito UEDA ,  Takakiyo Harigai ,  Yoshiaki Tanaka ,  Hideaki Adachi ,  Eiji Fujii

    发明人： Michihito UEDA ,  Takakiyo Harigai ,  Yoshiaki Tanaka ,  Hideaki Adachi ,  Eiji Fujii

    IPC分类号： H01L41/18

    CPC分类号： H01L41/094 ,  H01L41/042 ,  H01L41/187 ,  H01L41/316

    摘要： The purpose of the present invention is to provide a method for driving an actuator in which unnecessary deformation is suppressed.The present invention provides a method for driving an actuator, comprising the following steps (a) and (b): a step (a) of preparing the actuator, wherein the actuator comprises a first electrode, a piezoelectric layer composed of (Bi,Na,Ba)TiO3, and a second electrode, the piezoelectric layer is interposed between the first electrode and the second electrode, +X direction, +Y direction, and +Z direction denote [100] direction, [01-1] direction, and [011] direction, respectively, and the piezoelectric layer is preferentially oriented along the +Z direction; and a step (b) of applying a potential difference between the first electrode and the second electrode to drive the actuator.

    摘要翻译： 本发明的目的是提供一种驱动致动器的方法，其中不必要的变形被抑制。 本发明提供一种用于驱动致动器的方法，包括以下步骤（a）和（b）：制备致动器的步骤（a），其中致动器包括第一电极，由（Bi，Na ，Ba）TiO 3和第二电极，压电层插入在第一电极和第二电极之间，+ X方向，+ Y方向和+ Z方向表示[100]方向，[01-1]方向，以及 方向，并且压电层优先沿着+ Z方向取向; 以及在第一电极和第二电极之间施加电位差以驱动致动器的步骤（b）。