公开(公告)号：US06710439B2

公开(公告)日：2004-03-23

申请号：US10244101

申请日：2002-09-12

申请人： Keun-hyuk Lee ,  Gi-Young Jeun ,  O-seob Jeon

发明人： Keun-hyuk Lee ,  Gi-Young Jeun ,  O-seob Jeon

IPC分类号： H01L2352

CPC分类号： H01L25/165 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48096 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/484 ,  H01L2224/4911 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power semiconductor module in which a main circuit terminal lead frame part and a control circuit lead frame part are bent toward a main circuit lead frame part, is provided. The power semiconductor module includes a main circuit part; a control circuit part and a control circuit terminal which are placed along a plane perpendicular to the main circuit part; a main circuit terminal placed along another plane perpendicular to the main circuit part, facing the control circuit part the control circuit terminal; a bonding wire; and a mold compound. Accordingly, it is possible to realize a light and compact intelligent power module that is simple to manufactured at a low cost.

摘要翻译： 提供了主电路端子引线框架部分和控制电路引线框架部分朝向主电路引线框架部分弯曲的功率半导体模块。 功率半导体模块包括主电路部分; 控制电路部分和控制电路端子，其沿垂直于主电路部分的平面放置; 主电路端子沿垂直于主电路部分的另一平面放置，面向控制电路部分的控制电路端子; 接合线; 和模具化合物。 因此，可以实现以低成本制造简单的轻巧紧凑的智能电力模块。

公开(公告)号：US07449774B1

公开(公告)日：2008-11-11

申请号：US09677558

申请日：2000-09-29

申请人： Gi-Young Jeun ,  O-Seob Jeun ,  Eun-Ho Lee ,  Seung-Won Lim

发明人： Gi-Young Jeun ,  O-Seob Jeun ,  Eun-Ho Lee ,  Seung-Won Lim

IPC分类号： H01L23/34

CPC分类号： H01L23/49575 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L25/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor power module includes a lead frame having a first portion at a first level, a second portion surrounding the first portion at a second level, and a plurality of terminals connected to the second portion. The semiconductor power module further includes a power circuit mounted on a first surface of the first portion and an insulator having an electrically insulating property and thermal conductivity. The insulator is adjacent to a second surface of the first portion of the lead frame. The semiconductor power module further includes a sealer having an electrically insulating property that covers the power circuit and the control circuit.

摘要翻译： 半导体功率模块包括具有第一电平的第一部分的引线框架和围绕第二部分的第二电平的第二部分和连接到第二部分的多个端子。 半导体功率模块还包括安装在第一部分的第一表面上的电源电路和具有电绝缘性能和导热性的绝缘体。 绝缘体与引线框架的第一部分的第二表面相邻。 半导体功率模块还包括具有覆盖电源电路和控制电路的电绝缘性能的密封器。

公开(公告)号：US20060113562A1

公开(公告)日：2006-06-01

申请号：US11327073

申请日：2006-01-06

申请人： Gi-Young Jeun ,  O-Seob Jeun ,  Eun-Ho Lee ,  Seung-Won Lim

发明人： Gi-Young Jeun ,  O-Seob Jeun ,  Eun-Ho Lee ,  Seung-Won Lim

IPC分类号： H01L23/495 ,  H01L31/111

CPC分类号： H01L23/49575 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L25/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor power module includes a lead frame having a first portion at a first level, a second portion surrounding the first portion at a second level, and a plurality of terminals connected to the second portion. The semiconductor power module further includes a power circuit mounted on a first surface of the first portion and an insulator having an electrically insulating property and thermal conductivity. The insulator has a first surface adjacent to a second surface of the first portion, and a second surface opposite to the first surface of the insulator and exposed to the outside. The semiconductor power module further includes a sealer having an electrically insulating property that covers the power circuit.

公开(公告)号：US07501700B2

公开(公告)日：2009-03-10

申请号：US11327073

申请日：2006-01-06

申请人： Gi-Young Jeun ,  O-Seob Jeun ,  Eun-Ho Lee ,  Seung-Won Lim

发明人： Gi-Young Jeun ,  O-Seob Jeun ,  Eun-Ho Lee ,  Seung-Won Lim

IPC分类号： H01L23/34

CPC分类号： H01L23/49575 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L25/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor power module includes a lead frame having a first portion at a first level, a second portion surrounding the first portion at a second level, and a plurality of terminals connected to the second portion. The semiconductor power module further includes a power circuit mounted on a first surface of the first portion and an insulator having an electrically insulating property and thermal conductivity. The insulator has a first surface adjacent to a second surface of the first portion, and a second surface opposite to the first surface of the insulator and exposed to the outside. The semiconductor power module further includes a sealer having an electrically insulating property that covers the power circuit.

摘要翻译： 半导体功率模块包括具有第一电平的第一部分的引线框架和围绕第二部分的第二电平的第二部分和连接到第二部分的多个端子。 半导体功率模块还包括安装在第一部分的第一表面上的电源电路和具有电绝缘性能和导热性的绝缘体。 绝缘体具有与第一部分的第二表面相邻的第一表面和与绝缘体的第一表面相对并暴露于外部的第二表面。 半导体功率模块还包括具有覆盖电源电路的电绝缘性能的密封器。

公开(公告)号：US20130175704A1

公开(公告)日：2013-07-11

申请号：US13344567

申请日：2012-01-05

申请人： Gi-Young Jeun ,  Kang Rim Choi

发明人： Gi-Young Jeun ,  Kang Rim Choi

IPC分类号： H01L23/28 ,  H01L21/60

CPC分类号： H01L23/3735 ,  H01L21/56 ,  H01L23/4334 ,  H01L23/49562 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A packaged power transistor device includes a Direct-Bonded Copper (“DBC”) substrate. Contact pads of a first lead are attached with solderless welds to a metal layer of the DBC substrate. In a first example, the solderless welds are ultrasonic welds. In a second example, the solderless welds are laser welds. A single power transistor realized on a single semiconductor die is attached to the DBC substrate. In one example, a first bond pad of the die is wire bonded to a second lead, and a second bond pad of the die is wire bonded to a third lead. The die, the wire bonds, and the metal layer of the DBC substrate are covered with an amount of plastic encapsulant. Lead trimming is performed to separate the first, second and third leads from the remainder of a leadframe, the result being the packaged power transistor device.

摘要翻译： 封装的功率晶体管器件包括直接连接铜（“DBC”）基板。 第一引线的接触焊盘与无焊焊接部分连接到DBC基板的金属层。 在第一个例子中，无焊焊缝是超声焊接。 在第二个例子中，无焊焊缝是激光焊接。 在单个半导体管芯上实现的单功率晶体管连接到DBC衬底。 在一个示例中，模具的第一接合焊盘被引线接合到第二引线，并且管芯的第二接合焊盘被引线接合到第三引线。 模具，引线接合和DBC基板的金属层被一定量的塑料密封剂覆盖。 执行引线修整以将第一，第二和第三引线与引线框架的其余部分分离，结果是封装的功率晶体管器件。