公开(公告)号：US5297956A

公开(公告)日：1994-03-29

申请号：US799931

申请日：1991-11-29

申请人： Kikuo Yamabe ,  Keitaro Imai ,  Katsuya Okumura ,  Ken Nakao ,  Seikou Ueno

发明人： Kikuo Yamabe ,  Keitaro Imai ,  Katsuya Okumura ,  Ken Nakao ,  Seikou Ueno

IPC分类号： H01L21/324 ,  C30B31/12 ,  C30B31/14 ,  H01L21/22 ,  H01L21/31 ,  H01L21/673 ,  H01L21/683 ,  F23D5/00

CPC分类号： C30B31/12 ,  C30B31/14

摘要： A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.

摘要翻译： 一种热处理装置中的热处理方法和装置，其特征在于，具有要加入预定气体的加热室，设置在所述加热室周围的加热器和设置在所述加热室中的夹具，用于支撑待处理的多个基板的晶片 彼此并联，其中为了使热处理中要处理的基板的晶片的温度分布均匀，形成夹具以确定其尺寸和形状，其具有在 根据具有预定形状确定步骤的热处理方法的梯度，使得夹具形成为环状托盘（即，支撑环），用于在周边保持要处理的基板，并且托盘的厚度等于或等于 其外周侧比其内周侧厚。

公开(公告)号：US4735824A

公开(公告)日：1988-04-05

申请号：US866310

申请日：1986-05-23

申请人： Kikuo Yamabe ,  Keitaro Imai

发明人： Kikuo Yamabe ,  Keitaro Imai

IPC分类号： H01L29/00 ,  H01L21/28 ,  H01L21/8242 ,  B05D5/12

CPC分类号： H01L21/28211 ,  H01L27/10861

摘要： A method of forming an MOS capacitor by the steps of cutting a groove in the surface of a silicon substrate by the RIE process, thermally oxidizing the surface of said silicon substrate, depositing a capacitor electrode on said capacitor-insulating layer, being characterized in that when the capacitor-insulating layer is deposited, the surface of the silicon substrate is thermally oxidized in an oxidizing atmosphere containing 15% by vol. of steam.

摘要翻译： 通过以下步骤形成MOS电容器的方法：通过RIE工艺在硅衬底的表面中切割沟槽，热氧化所述硅衬底的表面，在所述电容器绝缘层上沉积电容器电极，其特征在于， 当沉积电容器绝缘层时，硅衬底的表面在含有15体积％的氧化气氛中被热氧化。 的蒸汽。

公开(公告)号：US5431561A

公开(公告)日：1995-07-11

申请号：US166014

申请日：1993-12-14

申请人： Kikuo Yamabe ,  Keitaro Imai ,  Katsuya Okumura ,  Ken Nakao ,  Seikou Ueno

发明人： Kikuo Yamabe ,  Keitaro Imai ,  Katsuya Okumura ,  Ken Nakao ,  Seikou Ueno

IPC分类号： H01L21/324 ,  C30B31/12 ,  C30B31/14 ,  H01L21/22 ,  H01L21/31 ,  H01L21/673 ,  H01L21/683 ,  F27D5/00

CPC分类号： C30B31/12 ,  C30B31/14

摘要： A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.

摘要翻译： 一种热处理装置中的热处理方法和装置，其特征在于，具有要加入预定气体的加热室，设置在所述加热室周围的加热器和设置在所述加热室中的夹具，用于支撑待处理的多个基板的晶片 彼此并联，其中为了使热处理中要处理的基板的晶片的温度分布均匀，形成夹具以确定其尺寸和形状，其具有在 根据具有预定形状确定步骤的热处理方法的梯度，使得夹具形成为环状托盘（即，支撑环），用于在周边保持要处理的基板，并且托盘的厚度等于或等于 其外周侧比其内周侧厚。

公开(公告)号：US5239614A

公开(公告)日：1993-08-24

申请号：US791545

申请日：1991-11-14

申请人： Seiko Ueno ,  Ken Nakao ,  Kikuo Yamabe ,  Keitaro Imai

发明人： Seiko Ueno ,  Ken Nakao ,  Kikuo Yamabe ,  Keitaro Imai

IPC分类号： H01L21/22 ,  H01L21/00 ,  H01L21/205 ,  H01L21/31

CPC分类号： H01L21/67115

摘要： A heat-treating method comprising preparing a plurality of wafers parallel to one another in a process tube while keeping their surfaces to be treated substantially horizontal, arranging plural MoSi.sub.2 wire heaters along the longitudinal axis of the process tube so as to be placed around the process tube, adjusting the amount of current supplied to the heaters to form on the treated surface of each of the wafers temperature gradient extending from one side of the outer circumferential rim of each of the wafers to the other side thereof, and rotating the wafers in their surfaces.

摘要翻译： 一种热处理方法，包括在处理管中彼此平行地制备多个晶片，同时保持其待处理的表面基本上水平，沿着处理管的纵向轴线布置多个MoSi2线加热器，以便围绕该工艺 调节供应到加热器的电流量，以在每个晶片的每个晶片的处理表面上形成从每个晶片的外周边缘的一侧延伸到另一侧的温度梯度，并且将晶片在它们的 表面。

公开(公告)号：US5189503A

公开(公告)日：1993-02-23

申请号：US683132

申请日：1991-04-10

申请人： Kyoichi Suguro ,  Keitaro Imai ,  Mitsutoshi Koyama ,  Kikuo Yamabe

发明人： Kyoichi Suguro ,  Keitaro Imai ,  Mitsutoshi Koyama ,  Kikuo Yamabe

IPC分类号： H01L21/02 ,  H01L21/316 ,  H01L27/108 ,  H01L29/92

CPC分类号： H01L27/10808 ,  H01L28/40 ,  H01L21/31604

摘要： A dielectric insulation film consists of a metal oxide and pieces of dissimilar metal element added to the metal oxide. A positive charge number under an ionized state of the dissimilar metal element is smaller by one than that of the metal oxide. An ionic charge number of the dissimilar metal element is of a predetermined one kind. The dielectric insulation film is formed as an insulation film of capacitor of each cell of a semiconductor device according to a chemical vapor deposition (CVD) method in the process of forming cells of the semiconductor device.

摘要翻译： 介电绝缘膜由金属氧化物和添加到金属氧化物中的异种金属元素组成。 异种金属元素的离子化状态下的正电荷数小于金属氧化物的正电荷数。 异种金属元素的离子电荷数是预定的一种。 在形成半导体器件的电池的工艺中，根据化学气相沉积（CVD）方法，将介电绝缘膜形成为半导体器件的每个电池的电容器的绝缘膜。

公开(公告)号：US5489542A

公开(公告)日：1996-02-06

申请号：US91921

申请日：1993-07-16

申请人： Hiroshi Iwai ,  Toyota Morimoto ,  Hisayo S. Momose ,  Kikuo Yamabe ,  Yoshio Ozawa

发明人： Hiroshi Iwai ,  Toyota Morimoto ,  Hisayo S. Momose ,  Kikuo Yamabe ,  Yoshio Ozawa

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/51 ,  H01L21/265 ,  H01L21/02 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66575 ,  H01L21/28211

摘要： A method for fabricating a semiconductor device on a silicon substrate, consists of producing a silicon oxide film on the silicon substrate producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas, producing a gate region from the silicon oxide film, the silicon nitride film, and the conductive film, a channel region being positioned under the gate region in the silicon substrate, producing a source region in the silicon substrate adjacent to one side of the channel region, producing a drain region in the silicon substrate adjacent to another side of the channel region, and producing wiring regions on the source region, the drain region, and the gate region.

摘要翻译： 一种在硅衬底上制造半导体器件的方法，包括在硅衬底上产生氧化硅膜，在氧化硅膜上产生薄的氮化硅膜，在氮气气氛中氮化氮化硅膜， 氮化硅膜上的导电膜在氮气气氛中氮化，从硅氧化膜，氮化硅膜和导电膜产生栅极区，沟道区位于硅衬底的栅极区下方， 在所述硅衬底中邻近所述沟道区的一侧产生源极区，在所述硅衬底中与所述沟道区的另一侧相邻的漏极区产生，并且在所述源极区，所述漏极区和所述栅极上产生布线区 地区。

公开(公告)号：US5360748A

公开(公告)日：1994-11-01

申请号：US007876

申请日：1993-01-22

申请人： Soichi Nadahara ,  Kikuo Yamabe

发明人： Soichi Nadahara ,  Kikuo Yamabe

IPC分类号： H01L21/322 ,  H01L21/306

CPC分类号： H01L21/3221 ,  Y10S148/06

摘要： A method of manufacturing a semiconductor device, which comprises the steps of providing a semiconductor substrate having a first primary surface which is designated to form the semiconductor device and a second primary surface opposite from the first primary surface, the substrate containing contaminants therein; forming a boron-doped layer on the second primary surface of the substrate; and absorbing the contaminants into the boron-doped layer.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：提供半导体衬底，所述半导体衬底具有指定为形成所述半导体器件的第一主表面和与所述第一主表面相对的第二主表面，所述衬底中含有污染物; 在所述衬底的所述第二主表面上形成硼掺杂层; 并将污染物吸收到硼掺杂层中。

公开(公告)号：US08026187B2

公开(公告)日：2011-09-27

申请号：US12550788

申请日：2009-08-31

申请人： Yoshiro Kabe ,  Junichi Kitagawa ,  Kikuo Yamabe

发明人： Yoshiro Kabe ,  Junichi Kitagawa ,  Kikuo Yamabe

IPC分类号： H01L21/00 ,  H01L21/76

CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02337 ,  H01L21/31654 ,  H01L21/67115 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/7881 ,  H01L29/792

摘要： To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layer 501 of the wafer W is treated by plasma oxidation to form on the silicon layer 501 to a film thickness T1 a silicon oxide film 503. Next, the wafer W on which the silicon oxide film 503 is formed is transferred to a thermal oxidation treatment apparatus where the silicon oxide film 503 is treated by thermal oxidation to thereby form a silicon oxide film 505 having a target film thickness T2.

摘要翻译： 为了形成具有优异的Qbd特性和Rd特性的优质氧化硅膜，将晶片W装载到等离子体处理装置中，其中通过等离子体氧化处理晶片W的硅层501的表面以形成在 硅层501形成膜厚T1，形成氧化硅膜503.接着，将形成有氧化硅膜503的晶片W转移到热氧化处理装置中，通过热氧化处理氧化硅膜503，形成 具有目标膜厚度T2的氧化硅膜505。

公开(公告)号：US5237188A

公开(公告)日：1993-08-17

申请号：US798098

申请日：1991-11-27

申请人： Hiroshi Iwai ,  Toyota Morimoto ,  Hisayo S. Momose ,  Kikuo Yamabe ,  Yoshio Ozawa

发明人： Hiroshi Iwai ,  Toyota Morimoto ,  Hisayo S. Momose ,  Kikuo Yamabe ,  Yoshio Ozawa

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/51

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66575 ,  H01L21/28211

摘要： A semiconductor device formed on a silicon substrate consisting of the steps of producing a silicon oxide film on the silicon substrate, producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas, producing a gate region from the silicon oxide film, the silicon nitride film, and the conductive film, a channel region being positioned under the gate region in the silicon substrate, producing a source region in the silicon substrate adjacent to one side of the channel region, producing a drain region in the silicon substrate adjacent to another side of the channel region, and producing wiring regions on the source region, the drain region, and the gate region.

摘要翻译： 一种形成在硅衬底上的半导体器件，包括在硅衬底上制造氧化硅膜的步骤，在氧化硅膜上产生薄氮化硅膜，在氮气气氛中对氮化硅膜进行氮化，产生 氮化硅膜上的导电膜在氮气气氛中氮化，从硅氧化膜，氮化硅膜和导电膜产生栅极区，沟道区位于硅衬底的栅极区下方， 在所述硅衬底中邻近所述沟道区的一侧产生源极区，在所述硅衬底中与所述沟道区的另一侧相邻的漏极区产生，并且在所述源极区，所述漏极区和所述栅极上产生布线区 地区。

公开(公告)号：US5073813A

公开(公告)日：1991-12-17

申请号：US557716

申请日：1990-07-26

申请人： Shigeru Morita ,  Kikuo Yamabe ,  Masakazu Kakumu

发明人： Shigeru Morita ,  Kikuo Yamabe ,  Masakazu Kakumu

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/768 ,  H01L29/78

CPC分类号： H01L21/76224 ,  H01L21/768

摘要： A MOS structure is formed on a silicon semiconductor substrate surface using a first gate electrode film made of polysilicon, an element isolation groove reaching the inside of the silicon semiconductor substrate is formed, and an insulating film is filled in the groove. In addition, a second gate electrode film made of a refractory metal such as molybdenum silicide is formed to be connected to the first gate electrode film, and the first and second gate electrode films are simultaneously removed to form a MOS gate electrode and a wiring layer.

摘要翻译： 使用由多晶硅制成的第一栅极电极膜，在硅半导体衬底表面上形成MOS结构，形成到硅半导体衬底内部的元件隔离沟，并且将绝缘膜填充到沟槽中。 此外，形成由诸如硅化钼的难熔金属制成的第二栅极电极膜，以连接到第一栅极电极膜，并且同时去除第一和第二栅极电极膜以形成MOS栅电极和布线层 。